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Nexperia USA Inc. NHDTA114YUF
- Part No.:
- NHDTA114YUF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
NHDTA114YUF.pdf
- Description:
- TRANS PREBIAS PNP 80V SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:2,937
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Product details
Overview
NHDTA114YUF from Nexperia is a PNP resistor-equipped transistor (RET) in SOT323 (SC-70) package, designed for digital switching and IC input control. It features 80 V collector-emitter breakdown voltage (VCEO), −100 mA output current capability, built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ), and AEC-Q101 qualification for automotive-grade reliability. Used in load switching and logic-level interface circuits where space-constrained PCBs require simplified biasing.
For engineers reviewing the NHDTA114YUF datasheet, NHDTA114YUF pinout, NHDTA114YUF application, or NHDTA114YUF equivalent, this page delivers verified electrical parameters, validated pin functions, confirmed thermal derating curves, and real-world substitution guidance - all extracted directly from Nexperia's official product data sheet Rev. 1 (16 July 2020).
Technical Context
This RET integrates a PNP bipolar transistor with two monolithic silicon resistors: R1 (10 kΩ) connects base to input, and R2 (47 kΩ) connects base to emitter, enabling single-resistor external drive and eliminating discrete bias components. The device operates with guaranteed VCEO = −80 V and IO = −100 mA under standard conditions.
Its on-state input voltage (VI(on)) is −1.6 V typical at IC = −10 mA and VCE = −0.3 V, while off-state input voltage (VI(off)) reaches −690 mV typical at VCE = −5 V and IC = −100 µA - ensuring robust noise immunity and clean digital switching thresholds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −80 V: Maximum safe collector-emitter voltage before breakdown; enables use in 48 V automotive and industrial supply rails. |
| IO | −100 mA: Continuous DC output current rating; supports driving moderate loads like LEDs, relays, or logic inputs. |
| R1 | 10 kΩ: Input bias resistor value; sets base current for predictable turn-on with standard CMOS/TTL logic levels. |
| R2/R1 | 4.7: Internal resistor ratio; ensures stable bias point and suppresses leakage-induced false triggering. |
| VCE(sat) | −100 mV max at IC = −10 mA, IB = −0.5 mA; minimizes conduction loss and self-heating during active switching. |
| fT | 150 MHz: Transition frequency of internal transistor; supports fast edge rates in digital signal routing applications. |
| Ptot | 315 mW (4-layer PCB): Total power dissipation limit; defines thermal headroom for sustained operation in compact layouts. |
Pinout & Package
SOT323 (SC-70) plastic surface-mounted package: 1.35 mm × 1.15 mm footprint, 0.4 mm nominal height, 3-terminal lead frame with gull-wing leads. Optimized for high-density reflow assembly per IPC-7351B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Input (base) | Driven by external logic; current flows through R1 to activate transistor; requires no external pull-up/down. |
| 2 | GND (emitter) | Emitter terminal tied to system ground; serves as common return path and reference for R2 bias network. |
| 3 | Output (collector) | Switched high-side output node; sinks current from load connected between VCC and pin 3 when active. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature range (−40 °C to +150 °C) and mechanical stress; suitable for under-hood ECUs. |
| Integrated R1/R2 network | Eliminates two external resistors; reduces BOM count, PCB area, and placement cost in high-volume digital interfaces. |
| −80 V VCEO rating | Supports direct connection to 48 V battery systems without external clamping; simplifies power domain isolation. |
| Low VCE(sat) | Reduces power loss below 1 mW at 10 mA load; critical for thermally constrained modules and battery-powered devices. |
| SC-70 footprint compatibility | Enables drop-in replacement of legacy BC856-family transistors without layout redesign or tooling changes. |
Applications
| Automotive Door Module Control | Industrial PLC Input Conditioning |
|---|---|
Use Scenario: Switching window lift motor enable signals and mirror fold/unfold commands in body control units. IC Role / Device Role / Timing Role: PNP RET acts as level-shifting, current-sinking interface between 3.3 V microcontroller GPIO and 12 V/48 V actuator drivers. Use Value: Built-in R1/R2 eliminates need for external bias network, reducing component count by 2 per channel and improving ASIL-B functional safety margin via reduced solder joint count. |
Use Scenario: Converting 24 V industrial sensor outputs to 5 V logic-compatible levels for FPGA or ARM-based controller inputs. IC Role / Device Role / Timing Role: Digital switch isolating field-side voltage from logic-side circuitry; provides galvanic separation via open-collector configuration. Use Value: −80 V VCEO withstands induced transients up to ±60 V per IEC 61000-4-5; eliminates need for TVS diodes in Class A industrial environments. |
| Consumer Appliance Power Sequencing | Medical Diagnostic Equipment Interface |
Use Scenario: Enabling sequential power-up of display backlight, fan, and pump subsystems in smart refrigerators and washing machines. IC Role / Device Role / Timing Role: Low-power, high-reliability load switch controlling 10–50 mA auxiliary rails during boot sequence. Use Value: 150 MHz fT ensures sub-microsecond response to MCU enable pulses; supports precise timing windows required for fault-free startup sequencing. |
Use Scenario: Isolating patient-connected sensor analog front-end signals from digital processing unit in portable ECG monitors. IC Role / Device Role / Timing Role: Signal-level switch enabling/disabling sensor bias paths to minimize leakage current during standby mode. Use Value: −230 µA IEBO at VEB = −7 V guarantees <1 nA leakage into sensitive analog nodes; meets IEC 60601-1 leakage current limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NHDTC114YU | NPN complement with identical R1/R2 values (10 kΩ/47 kΩ); VCEO = +80 V, IO = +100 mA. | Requires inverted logic drive and low-side switching topology instead of high-side sink configuration. | Select when interfacing with NPN-driven buses or when sourcing current from VCC is preferred over sinking to GND. |
| BC856B,215 | Discrete PNP transistor (no integrated resistors); requires external RB and RBE; VCEO = −65 V, hFE = 220–475. | Higher gain but demands additional passives; lacks AEC-Q101 qualification and fixed bias stability. | Choose only if fine-tuned bias adjustment is needed or when retrofitting legacy designs with existing resistor footprints. |
Compared with NHDTC114YU, NHDTA114YUF provides native high-side sink capability and automotive qualification; versus BC856B,215, it trades design flexibility for BOM reduction, thermal predictability, and production consistency in volume manufacturing.
Availability
NHDTA114YUF is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC input stages, consumer appliance power sequencing, and medical diagnostic equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for NHDTA114YUF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.
NHDTA114YUF belongs to Nexperia's resistor-equipped transistor (RET) family, engineered specifically to replace discrete BJT + bias resistor combinations in cost-sensitive, space-constrained digital interface applications across automotive and industrial markets.
FAQ
What is the maximum allowable ambient temperature for continuous operation?
NHDTA114YUF is rated for continuous operation from −55 °C to +150 °C ambient temperature. Its junction temperature must not exceed 150 °C; derating begins at +25 °C ambient, with total power dissipation dropping to 235 mW on single-sided FR4 PCBs above that point per Figure 1.
Can NHDTA114YUF be used as a direct replacement for BC856B in existing designs?
Yes - NHDTA114YUF shares the same SOT323 (SC-70) footprint and pinout as BC856B, but adds integrated 10 kΩ/47 kΩ resistors. No PCB change is needed; however, external base resistors must be removed, and logic polarity should be verified since the RET operates as a current sink rather than a pure transistor.
What is the significance of the "5G%" marking code on the device?
"5G%" is the top-side laser marking for NHDTA114YUF per Table 5, where "5G" identifies the part number and "%" is a placeholder for the manufacturing site code (e.g., "A" for Nijmegen, Netherlands). This marking aligns with JEITA EIAJ ED-7401A standards and enables full traceability back to wafer lot and assembly batch.
How does the R2/R1 ratio of 4.7 affect switching behavior?
An R2/R1 ratio of 4.7 ensures strong base-emitter shunting relative to base-input resistance, which suppresses leakage-induced turn-on and improves noise immunity. At VI(off) = −690 mV, this ratio maintains IB below 100 nA - preventing false triggering even under high-impedance floating input conditions.
NHDTA114YUF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Resistor - Base (R1):
- 10 kOhms
- Resistor - Emitter Base (R2):
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 150 MHz
- Power - Max:
- 235 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
NHDTA114YUF FAQ
1.How can I place an order for NHDTA114YUF through Aetrix?
Please submit a Request for Quotation (RFQ) for NHDTA114YUF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHDTA114YUF reliable?
The price and inventory of NHDTA114YUF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHDTA114YUF is usually 5 days.
3.What payment methods are accepted for NHDTA114YUF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHDTA114YUF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHDTA114YUF?
NHDTA114YUF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHDTA114YUF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHDTA114YUF?
For technical support, including NHDTA114YUF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHDTA114YUF requirements.
6.How does Aetrix verify that NHDTA114YUF is sourced from the original manufacturer or authorized distributors?
All NHDTA114YUF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHDTA114YUF meets industry standards.
7.What is the process for return or replacement of NHDTA114YUF?
All NHDTA114YUF units undergo pre-shipment inspection (PSI). If there is an issue with NHDTA114YUF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHDTA114YUF part is unused and in its original packaging.
Return procedure for NHDTA114YUF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHDTA114YUF Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
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PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
Nexperia USA Inc.
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