Nexperia USA Inc. NHDTA123JUF

Overview

NHDTA123JUF from Nexperia is a PNP resistor-equipped transistor (RET) in SOT323 (SC-70) package, designed for digital switching and IC input control. It delivers −100 mA output current, −80 V collector-emitter breakdown voltage (V_CEO), and integrates 2.2 kΩ input bias resistor (R1) and 47 kΩ feedback resistor (R2), enabling direct logic-level drive without external base resistors.

For engineers reviewing the NHDTA123JUF datasheet, NHDTA123JUF pinout, NHDTA123JUF application, or NHDTA123JUF equivalent, key selection criteria include guaranteed −80 V breakdown rating, AEC-Q101 qualification for automotive use, on-state input voltage of −0.81 V at −10 mA, and thermal resistance of 397 K/W on 4-layer PCB - critical for compact, high-reliability digital interface designs.

Technical Context

This RET integrates a PNP bipolar transistor with two monolithically embedded silicon resistors: R1 (2.2 kΩ) connects base to input terminal, and R2 (47 kΩ) connects base to emitter. The internal topology eliminates discrete base biasing components and ensures predictable turn-on/turn-off behavior under logic-driven conditions.

It operates with guaranteed V_CE(sat) ≤ −100 mV at I_C = −10 mA / I_B = −0.5 mA and exhibits h_FE ≥ 100 at V_CE = −5 V and I_C = −10 mA. Its −7 V emitter-base breakdown (V_EBO) and −100 nA ICEO support robust noise immunity in low-voltage digital systems.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: ultra-compact 3-lead footprint (2.2 × 1.35 × 0.95 mm), optimized for high-density PCB layouts and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Compared with NHDTC123JU, NHDTA123JUF provides complementary high-side switching capability with identical biasing; versus BC856B, it trades minor V_CE(sat) penalty for significant reduction in assembly cost, test time, and failure modes from missing or misvalued external resistors.

Availability

NHDTA123JUF is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, and medical diagnostic equipment requiring stable component supply across long product lifecycles.

Supply support for NHDTA123JUF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with leadership in automotive-qualified components.

NHDTA123JUF belongs to Nexperia's resistor-equipped transistor (RET) family, engineered specifically to replace discrete BJT + resistor combinations in cost-sensitive, space-constrained digital interface applications.

FAQ

What is the maximum allowable input voltage applied to Pin 1 (Input) of NHDTA123JUF?

The absolute maximum input voltage (V_I) is −20 V, as specified in Table 6 (Limiting Values). Exceeding this value risks permanent damage to the integrated R1 resistor or base-emitter junction. For reliable operation, keep input voltage within −0.3 V to −5 V during active switching, and ensure transient clamping if interfacing with inductive loads.

Can NHDTA123JUF be used in linear amplifier configurations?

No - NHDTA123JUF is optimized exclusively for digital switching operation. Its integrated resistors fix the base bias point, preventing stable DC operating point adjustment required for linear amplification. The datasheet specifies no small-signal parameters (e.g., g_m, r_π) and characterizes only switching metrics like V_CE(sat), h_FE, and V_I(on/off).

How does the thermal resistance change when mounted on a 2-layer versus 4-layer PCB?

R_th(j-a) degrades from 397 K/W (4-layer) to 532 K/W (single-sided FR4), increasing junction temperature rise by ~34% at same power dissipation. This directly limits usable output current: at 75 °C ambient, max continuous I_O drops from 100 mA to ~75 mA to maintain T_j ≤ 150 °C.

Is the marking code '5H%' on NHDTA123JUF traceable to manufacturing lot and date?

Yes - the '5H' prefix identifies the device variant and wafer fab; '%' is a placeholder for the site-specific code (e.g., 'A' for Nijmegen, 'B' for Bangkok). Full traceability to lot number, wafer ID, and production date is maintained in Nexperia's quality database and available upon request with valid batch information.