onsemi NIS6201DR2G

Overview

NIS6201DR2G from onsemi is a floating, regulated charge pump IC designed to generate isolated bias voltage for ORing diode gate drives and floating supervisory circuits. It integrates a 1 MHz oscillator, internal linear regulator with 0.5 V reference, adjustable output (via external resistor divider), thermal limit protection, and high-voltage isolation capability up to external component ratings. It operates from 7 V to 15 V input and delivers regulated output referenced above ground potential.

For engineers reviewing the NIS6201DR2G datasheet, pinout, applications, or equivalent options, this page provides verified functional identity, confirmed SOIC-8 package mapping, validated pin roles including DRIVE, VREG, COMP, and PWRGND/SIGGND separation, real-world ORing and LED driver use cases, and two technically documented alternative charge pumps with explicit differences in regulation architecture and output adjustability.

Technical Context

The NIS6201DR2G implements a self-contained floating charge pump system with an integrated linear regulator whose output (VREG) supplies the oscillator and serves as the regulated bias source. Its oscillator drives external diode-capacitor networks at 0.9–1.45 MHz, enabling voltage doubling or inversion depending on external topology.

It features dual ground pins-PWRGND for high-current driver return and SIGGND for low-noise control circuit reference-ensuring noise isolation between power switching and regulation feedback. The COMP pin accepts a resistor divider to set VREG from 4.75 V to 12 V, while overcharge protection activates when VREG exceeds its set value by 10%.

Key Specifications

Pinout & Package

Package: SOIC-8 NB (Case 751-07), Pb-free, surface-mount, 1.27 mm pitch, 5.0 × 4.0 × 1.5 mm body height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar floating charge pump applications.

Compared with MAX16820ATB+T and LM27762DSGR, the NIS6201DR2G uniquely supports user-adjustable floating positive bias with dual-ground noise isolation and overcharge protection-making it the only option among the three for reliable ORing diode gate drive in high-reliability DC systems.

Availability

NIS6201DR2G is available at Aetrix Electronics and suitable for ORing diode gate drive, floating supervisory circuits, and LED driver bias supply applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for NIS6201DR2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensors, and logic solutions for automotive, industrial, cloud, and consumer markets.

The NIS6201DR2G belongs to onsemi's high-voltage analog interface product line, engineered specifically for generating isolated, regulated bias in redundant power architectures and floating control systems.

FAQ

What is the primary function of the NIS6201DR2G?

The NIS6201DR2G is a floating, regulated charge pump IC that generates an isolated, adjustable bias voltage (VREG) referenced above ground-typically used to drive ORing diode gates or power floating supervisory circuits. It integrates a 1 MHz oscillator, linear regulator with 0.5 V reference, and overcharge protection. Unlike basic charge pumps, the NIS6201DR2G provides regulation, thermal protection, and dual-ground separation for noise-sensitive applications.

Can the NIS6201DR2G generate negative output voltage?

Yes-the NIS6201DR2G can be configured as a regulated negative voltage doubler using external diodes and capacitors, as shown in Figure 5 of its datasheet. In this topology, the DRIVE pin oscillates to invert and regulate the output, producing a stable negative rail (e.g., −12.5 V) referenced to the input bus. Regulation is maintained via the COMP feedback loop, and overcharge protection remains active during startup transients.

What is the purpose of having separate SIGGND and PWRGND pins on the NIS6201DR2G?

SIGGND serves as the quiet analog ground for the regulator's error amplifier and COMP feedback network, while PWRGND carries high-current return paths from the DRIVE stage. This physical separation prevents switching noise from coupling into the regulation loop-critical for maintaining VREG stability in high-dV/dt environments like 48 V ORing buses. Layout best practice requires routing SIGGND separately to a clean ground plane region.

How is the output voltage (VREG) adjusted on the NIS6201DR2G?

VREG is set using an external resistor divider from VREG to COMP, based on the internal 0.5 V reference. The formula is VREG = 0.5 V × (1 + R_set/R_bias). Typical bias current ranges from 100 µA to 1 mA, allowing selection of standard resistor values. For example, a 1 kΩ R_bias and 22 kΩ R_set yields ~12 V output. The NIS6201DR2G's COMP pin must be connected only to this divider-no bypass cap or direct grounding.

Does the NIS6201DR2G require external components to operate?

Yes-the NIS6201DR2G requires external components to function: at minimum, a resistor divider on COMP for regulation, input and output capacitors (e.g., 0.1 µF on VCC and VREG), and an external diode-capacitor network driven by the DRIVE pin. Figures 2–5 in the datasheet show validated configurations for ORing, voltage doubling, and negative rail generation. No external oscillator or regulator IC is needed, but all charge pump topologies depend on correctly rated external diodes and caps.