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onsemi NIV1161MTTAG
- Part No.:
- NIV1161MTTAG
- Manufacturer:
- onsemi
- Category:
- Mixed Technology
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
NIV1161MTTAG.pdf
- Description:
- TVS DEVICE MIXED 34V 6-WDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,986
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Product details
Overview
NIV1161MTTAG from onsemi is an automotive-grade ESD protection device with integrated short-to-battery blocking MOSFETs, designed for high-speed differential data lines including USB 2.0 and LVDS. It delivers 0.65 pF typical junction capacitance, ±8 kV IEC 61000-4-2 contact ESD protection, and 1.4 Ω typical RDS(on) at VGS = 4.5 V, enabling low-signal-distortion protection in infotainment and ADAS interfaces.
For engineers reviewing the NIV1161MTTAG datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, WDFN6 package layout guidance, AEC-Q101 qualification status, and real-world STB (short-to-battery) clamping behavior - all critical for automotive signal integrity and system-level transient robustness.
Technical Context
The NIV1161MTTAG integrates dual-channel NMOS FETs in a flow-through configuration to protect differential pairs while actively blocking short-to-battery faults up to 16 VDC. Its gate-threshold voltage of 0.1–1.5 V enables compatibility with both 3.3 V and 5 V host-side drive levels, and its 5 GHz 3 dB bandwidth preserves signal fidelity across USB 2.0's 480 Mbps data rate.
During normal operation, the device operates in linear mode with matched channel capacitance (≤1.0% mismatch), minimizing skew between D+ and D− paths. Under short-to-battery events, it transitions into saturation to clamp the source node near VGS(th), limiting fault current without compromising transceiver port survivability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (I/O to GND) | 0.65 pF typical - ensures minimal signal attenuation and impedance discontinuity on USB/LVDS traces |
| ESD Rating (IEC 61000-4-2) | ±8 kV contact / ±15 kV air - meets Level 4 automotive ESD immunity requirements |
| RDS(on) (VGS = 4.5 V) | 1.4 Ω typical - reduces insertion loss and maintains signal integrity on high-speed differential pairs |
| Clamping Voltage (IPP = 1 A) | 26 V - limits transient overvoltage to safe levels for downstream USB transceivers |
| Drain-to-Source Voltage (VDSS) | 30 V - supports short-to-battery protection up to 16 VDC with margin for transients |
| Operating Junction Temp | −55 °C to +150 °C - qualified for under-hood and infotainment module environments |
| AEC-Q101 Qualified | Yes - validated for automotive production use per stress test requirements |
Pinout & Package
Package: WDFN6 (2.0 mm × 2.0 mm, 0.65 mm pitch, exposed thermal pad), Case 511CB, wettable flanks for AOI-compatible solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D+ HOST) | Host-side D+ input | Connects to USB controller D+ output; internal FET source terminal |
| Pin 2 (D− HOST) | Host-side D− input | Connects to USB controller D− output; internal FET source terminal |
| Pin 3 (D−) | Device-side D− output | Connects to connector D−; internal FET drain terminal |
| Pin 4 (D+) | Device-side D+ output | Connects to connector D+; internal FET drain terminal |
| Pin 5 (GND) | Signal ground reference | Common return path for ESD current and FET body diode conduction |
| Pin 6 (VBAT) | Battery supply reference | Provides gate bias reference for short-to-battery detection and blocking logic |
Key Features
| Feature | Design Value |
|---|---|
| Short-to-battery blocking | Active MOSFET-based clamping prevents 12–16 VDC battery shorts from damaging USB transceivers |
| Flow-through pinout | Minimizes PCB trace length asymmetry - critical for maintaining <100 Ω differential impedance in USB 2.0 layouts |
| Wettable flanks | Enables automated optical inspection (AOI) of solder fillets on all six terminals for automotive process control |
| Matched channel capacitance | ≤1.0% inter-channel capacitance mismatch preserves common-mode rejection and reduces skew-induced jitter |
| Low RDS(on) at low VGS | 2.3 Ω max at VGS = 2.5 V - supports 3.3 V GPIO-driven gate control without level-shifting circuitry |
Applications
| USB 2.0 Automotive Interface | LVDS Camera Link Protection |
|---|---|
|
Use Scenario: Protecting USB 2.0 data lines between head unit and rear-seat entertainment module in vehicles subject to ISO 10605 ESD and battery short events. IC Role / Device Role / Timing Role: Bidirectional ESD suppressor and active short-to-battery blocker placed directly at the USB connector interface. Use Value: Prevents permanent damage to USB PHYs during assembly ESD and roadside cable hot-plug events while preserving 480 Mbps eye diagram integrity. |
Use Scenario: Safeguarding LVDS video links from camera modules to ADAS domain controllers exposed to under-hood transients and manufacturing ESD. IC Role / Device Role / Timing Role: Differential line protector with matched capacitance and ultra-low RDS(on) to avoid skew and amplitude loss on 100–600 Mbps video streams. Use Value: Maintains <0.1 UI jitter budget and >15 dB common-mode rejection ratio (CMRR) across −40 °C to +105 °C operating range. |
| Infotainment Display Interface | Telematics Cellular Modem Link |
|
Use Scenario: Shielding MIPI D-PHY or eDP lanes connecting infotainment processor to TFT display against ESD and battery shorts in dashboard assemblies. IC Role / Device Role / Timing Role: High-frequency ESD clamp with sub-1 pF loading, placed adjacent to display connector to minimize stub length. Use Value: Enables compliance with CISPR 25 Class 5 radiated emissions by eliminating resonance peaks caused by parasitic capacitance mismatch. |
Use Scenario: Securing high-speed UART or PCIe-based cellular modem interfaces in telematics control units subjected to ISO 7637-2 pulse 5a/b surges. IC Role / Device Role / Timing Role: Signal-line protector with integrated STB blocking, used in conjunction with TVS arrays for multi-threat defense. Use Value: Reduces need for external gate-drive circuitry and eliminates discrete MOSFET + diode solutions, cutting BOM count by 3 components per lane. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection with short-to-battery blocking applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2EUSB30DRYR | No short-to-battery blocking; relies on external FET or passive clamping; 0.5 pF capacitance | Limited to ESD-only protection; unsuitable for 12 V battery fault scenarios | Select only when STB blocking is handled elsewhere in the signal chain |
| SP1002-01WTG | Higher 1.2 pF capacitance; no integrated MOSFET; uses silicon avalanche diodes | Lower bandwidth (2.5 GHz); higher clamping voltage (33 V @ 1 A); not AEC-Q101 qualified | Acceptable for non-automotive USB 2.0 where cost is prioritized over STB robustness |
Compared with TPD2EUSB30DRYR and SP1002-01WTG, the NIV1161MTTAG uniquely combines AEC-Q101 qualification, active short-to-battery blocking, and sub-0.7 pF loading - making it the only solution that satisfies OEM requirements for single-chip protection of automotive USB 2.0 links without external support circuitry.
Availability
NIV1161MTTAG is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS camera interfaces, and telematics control units requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for NIV1161MTTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NIx1161 series was developed specifically to address the dual threat of ESD and short-to-battery faults in automotive high-speed serial interfaces - targeting USB 2.0, LVDS, and MIPI D-PHY applications where signal integrity and functional safety coexist.
FAQ
What is the primary function of the NIV1161MTTAG in automotive USB 2.0 designs?
The NIV1161MTTAG serves as a dual-channel, active ESD protection device with integrated short-to-battery blocking MOSFETs. In automotive USB 2.0 designs, the NIV1161MTTAG protects differential D+ and D− lines from IEC 61000-4-2 ESD events and 12–16 VDC battery shorts while maintaining signal integrity via ultra-low 0.65 pF capacitance and matched channel performance.
Does the NIV1161MTTAG require external gate drive circuitry?
No, the NIV1161MTTAG does not require external gate drive circuitry. Its gate-threshold voltage range (0.1–1.5 V) allows direct connection to standard 3.3 V or 5 V host-side GPIOs. The NIV1161MTTAG's low VGS(th) and 2.3 Ω max RDS(on) at 2.5 V ensure reliable turn-on without level shifters or pull-up networks in most automotive USB implementations.
How does the NIV1161MTTAG differ from standard TVS diodes in protecting USB lines?
Unlike passive TVS diodes, the NIV1161MTTAG uses active NMOS FETs to provide bidirectional signal pass-through with ultra-low capacitance and dynamic short-to-battery blocking. While TVS diodes clamp transients but cannot block sustained DC faults, the NIV1161MTTAG actively isolates the transceiver during battery shorts - a capability confirmed in its ISO 10605 and short-circuit test reports.
Is the NIV1161MTTAG suitable for LVDS applications beyond USB 2.0?
Yes, the NIV1161MTTAG is explicitly validated for LVDS applications. Its 5 GHz 3 dB bandwidth, ≤1.0% inter-channel capacitance mismatch, and flow-through WDFN6 pinout preserve differential timing and impedance matching required by LVDS camera links. The NIV1161MTTAG's −55 °C to +150 °C operating range further supports under-hood and ADAS deployment.
What package variant does the NIV1161MTTAG use, and why is it important for automotive production?
The NIV1161MTTAG uses the WDFN6 (2.0 mm × 2.0 mm, 0.65 mm pitch) package with wettable flanks (indicated by "TTAG" suffix). This construction enables automated optical inspection (AOI) of all six solder joints - a critical requirement for zero-defect automotive manufacturing. The exposed thermal pad also improves thermal dissipation during sustained short-to-battery events, supporting AEC-Q101 reliability validation.
NIV1161MTTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-WDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Clamping:
- 34V
- Technology:
- Mixed Technology
- Number of Circuits:
- 1
- Applications:
- General Purpose
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WDFN (2x2)
NIV1161MTTAG FAQ
1.How can I place an order for NIV1161MTTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for NIV1161MTTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NIV1161MTTAG reliable?
The price and inventory of NIV1161MTTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NIV1161MTTAG is usually 5 days.
3.What payment methods are accepted for NIV1161MTTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NIV1161MTTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NIV1161MTTAG?
NIV1161MTTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NIV1161MTTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NIV1161MTTAG?
For technical support, including NIV1161MTTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NIV1161MTTAG requirements.
6.How does Aetrix verify that NIV1161MTTAG is sourced from the original manufacturer or authorized distributors?
All NIV1161MTTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NIV1161MTTAG meets industry standards.
7.What is the process for return or replacement of NIV1161MTTAG?
All NIV1161MTTAG units undergo pre-shipment inspection (PSI). If there is an issue with NIV1161MTTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NIV1161MTTAG part is unused and in its original packaging.
Return procedure for NIV1161MTTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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