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onsemi NIV1241MTWTAG

Part No.:
NIV1241MTWTAG
Manufacturer:
onsemi
Category:
Mixed Technology
Package:
6-WDFN Exposed Pad
Datasheet:
AetrixNIV1241MTWTAG.pdf
Description:
TVS DEVICE MIXED 43V 6-WDFNW
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,389

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Product details

Overview

NIV1241MTWTAG from onsemi is an automotive-grade ESD protection device with integrated short-to-battery blocking MOSFETs, designed for high-speed differential data lines including USB 2.0 and LVDS. It delivers 0.55 pF typical junction capacitance, ±8 kV IEC 61000−4−2 contact ESD protection, 24 V reverse working voltage, and 1.4 Ω typical RDS(on) at 4.5 V gate drive-enabling low-signal-distortion protection in infotainment and ADAS interfaces.

For engineers reviewing the NIV1241MTWTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance matching (<1.0% mismatch), AEC-Q101 qualification, wettable flanks for AOI, and dual-mode operation (normal signal pass-through + active STB clamping) in a WDFNW6 package.

Technical Context

The NIV1241MTWTAG integrates two matched N-channel MOSFETs per channel to enable bidirectional signal transmission while actively blocking short-to-battery faults up to 16 VDC. Its gate threshold voltage (0.1–1.5 V) supports both 3.3 V and 5 V logic-level control, and its 5 GHz 3 dB bandwidth preserves signal integrity on USB 2.0 (480 Mbps) and LVDS links.

During ESD events, it clamps to ≤35 V at ±8 kV contact discharge (IEC 61000−4−2), and under short-to-battery conditions, it operates in saturation to limit port current while holding the source node near VGS − VTH. The flow-through WDFNW6 layout ensures symmetrical trace routing for differential impedance control.

Key Specifications

Parameter Value and Actual Design Meaning
Capacitance (I/O to GND) 0.55 pF typical - minimizes signal attenuation and timing skew on USB 2.0/LVDS differential pairs
ESD Rating (IEC 61000−4−2) ±8 kV contact / ±15 kV air - meets Level 4 automotive ESD immunity requirements
Reverse Working Voltage 24 V - withstands load-dump transients and battery backup scenarios without conduction
RDS(on) (VGS = 4.5 V) 1.4 Ω typical - limits voltage drop and distortion on high-speed data lines during normal operation
Clamping Voltage (±8 kV) ≤35 V (positive) / ≤−4.4 V (negative) - protects downstream USB transceivers from overvoltage stress
Junction Temp Range −55 °C to +150 °C - supports under-hood and ADAS module deployment per AEC-Q101
Package WDFNW6 (2.0 × 2.2 mm, 0.65 mm pitch) - enables compact, impedance-controlled PCB layout with wettable flanks

Pinout & Package

Package: WDFNW6 (Case 515AK), 2.0 mm × 2.2 mm, 0.65 mm pitch, wettable flanks, Pb-free/RoHS compliant.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (D+ HOST) Host-side D+ signal input Connects to USB/LVDS host transceiver D+; internal FET source for STB protection path
Pin 2 (VDD) Supply voltage (5 V) Provides gate bias for integrated MOSFETs; must be stable 5 V rail referenced to GND
Pin 3 (D− HOST) Host-side D− signal input Connects to USB/LVDS host transceiver D−; internal FET source for STB protection path
Pin 4 (D+) Device-side D+ signal output Connects to connector/cable D+; internal FET drain; matches Pin 6 for differential symmetry
Pin 5 (GND) Ground reference Common return for ESD clamping paths, MOSFET substrates, and supply decoupling
Pin 6 (D−) Device-side D− signal output Connects to connector/cable D−; internal FET drain; matches Pin 4 for differential symmetry

Key Features

Feature Design Value
Short-to-battery blocking Active MOSFET-based clamping limits fault current during 12/24 V shorts, protecting transceivers without external circuitry
Ultra-low capacitance matching <1.0% capacitance mismatch between D+ and D− paths preserves differential signal integrity and common-mode rejection
Wettable flanks Side-wettable leads enable automated optical inspection (AOI) of solder joint quality in automotive production
AEC-Q101 qualified Validated for automotive temperature, humidity, mechanical shock, and ESD stress per JESD22 and ISO 10605
Flow-through layout Linear pin arrangement (1–2–3 on one side, 4–5–6 on opposite) allows straight, equal-length trace routing for controlled impedance

Applications

Automotive Infotainment USB Interface ADAS Camera Link (LVDS)

Use Scenario: Protecting USB 2.0 connections between head unit and rear-seat entertainment displays in vehicles exposed to ESD during service and battery transients during ignition.

IC Role / Device Role / Timing Role: Bidirectional ESD clamp and short-to-battery blocker placed between USB PHY and connector, operating transparently during 480 Mbps data transfer.

Use Value: Prevents permanent damage to USB transceivers during ±8 kV ESD events and 16 V battery shorts while adding <0.1 dB insertion loss at 240 MHz.

Use Scenario: Safeguarding LVDS video links from camera modules to display processors in driver-monitoring systems where cable disconnects cause battery shorts.

IC Role / Device Role / Timing Role: Signal-passive protector with active STB response, placed inline on differential LVDS pairs to maintain 100 Ω characteristic impedance.

Use Value: Enables uninterrupted 1.2 Gbps video streaming by limiting clamping voltage to ≤35 V and preserving <1 ps inter-pair skew.

Telematics Control Unit (TCU) Data Port Automotive Ethernet Companion Protection

Use Scenario: Shielding CAN-FD or LIN auxiliary data ports co-located with USB in TCU modules where shared PCB space increases coupling risk.

IC Role / Device Role / Timing Role: Low-capacitance guard for non-Ethernet high-speed lines, leveraging same footprint and layout rules as primary USB protection.

Use Value: Reduces board area by 30% versus discrete TVS + MOSFET solutions while maintaining AEC-Q101 compliance across all protected lines.

Use Scenario: Augmenting 100BASE-T1 Ethernet PHY protection by handling secondary ESD paths on auxiliary control lines (e.g., MDIO, reset) sharing the same connector.

IC Role / Device Role / Timing Role: Secondary-line protector with matched capacitance and STB blocking, used alongside dedicated Ethernet ESD arrays.

Use Value: Eliminates need for separate 5 V bias rails on auxiliary lines by reusing the main USB VDD supply with no cross-talk penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection with short-to-battery blocking applications.

Alternative Part Technical Difference Application Difference Selection Advice
TPD2EUSB30DRYR 0.8 pF capacitance, no integrated STB blocking MOSFETs - requires external FET or diode for battery short protection Limited to USB 2.0 only; not AEC-Q101 qualified; rated for industrial temp (−40 °C to +85 °C) Choose when cost sensitivity outweighs automotive qualification and STB integration needs
ESD7L5.0ST5G 0.5 pF capacitance, TVS-only architecture - no active short-to-battery blocking; clamps at 12 V (lower voltage but no current limiting) Suitable for consumer USB ports; lacks wettable flanks and fails ISO 10605 battery-short test conditions Choose for non-automotive, space-constrained USB 2.0 endpoints where STB events are not expected

Compared with TPD2EUSB30DRYR and ESD7L5.0ST5G, the NIV1241MTWTAG uniquely combines AEC-Q101 qualification, integrated STB blocking, wettable flanks, and sub-0.6 pF capacitance in a single WDFNW6 package-making it the only solution that satisfies full automotive USB/LVDS interface protection without supplemental components.

Availability

NIV1241MTWTAG is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS camera modules, and telematics control units requiring stable component supply, AEC-Q101 compliance, and production-ready wettable-flank packaging.

Supply support for NIV1241MTWTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The NIV1241MTWTAG belongs to onsemi's automotive-qualified ESD protection portfolio, engineered specifically to address short-to-battery faults and high-speed signal integrity challenges in modern vehicle data networks.

FAQ

What is the maximum operating voltage the NIV1241MTWTAG can withstand on its I/O pins?

The NIV1241MTWTAG has a reverse working voltage (VRWM) of 24 V and a breakdown voltage (VBR) of 24–28 V (I/O to GND), enabling reliable operation in automotive environments with load-dump transients up to 24 V. It is not rated for continuous 30 V exposure-VDSS = 30 V is a MOSFET absolute maximum rating, not a sustained operating condition. The NIV1241MTWTAG must be used within its 24 V VRWM limit for long-term reliability.

Does the NIV1241MTWTAG require an external gate resistor or pull-up network?

No, the NIV1241MTWTAG operates without external gate resistors. Its gate threshold voltage (0.1–1.5 V) allows direct connection to standard 3.3 V or 5 V logic supplies on Pin 2 (VDD). An optional low-value pull-up resistor (<5 kΩ) from source to gate may be used to level-shift common-mode voltage-but this is application-specific and not required for basic USB 2.0 or LVDS protection using the NIV1241MTWTAG.

How does the NIV1241MTWTAG differ from standard TVS diodes in automotive USB protection?

Unlike passive TVS diodes, the NIV1241MTWTAG integrates active MOSFETs that provide short-to-battery blocking-diverting fault current away from the transceiver instead of clamping it across the I/O pins. This results in lower power dissipation, no thermal runaway risk during sustained shorts, and preservation of signal integrity via ultra-low 0.55 pF capacitance. Standard TVS devices lack this active current-limiting behavior and cannot meet ISO 10605 battery-short requirements alone.

Is the NIV1241MTWTAG compatible with USB 3.0 or higher-speed protocols?

No, the NIV1241MTWTAG is specified and characterized for USB 2.0 (480 Mbps) and LVDS applications only. Its 5 GHz 3 dB bandwidth supports signals up to ~2.5 GHz fundamental frequency, but USB 3.0 SuperSpeed (5 Gbps) requires sub-0.3 pF capacitance and stricter return-loss performance not validated for the NIV1241MTWTAG. For USB 3.0, onsemi recommends the NIV1251 or industry alternatives explicitly rated for Gen1/Gen2 compliance.

Can the NIV1241MTWTAG be used in single-ended configurations, or is it strictly for differential pairs?

The NIV1241MTWTAG is optimized for differential use (D+/D−), with matched capacitance and symmetric pinout ensuring <1.0% inter-line mismatch. While individual channels could theoretically protect single-ended lines, doing so forfeits its core value proposition-differential skew control, flow-through layout benefits, and guaranteed capacitance matching-and violates the recommended application guidance in the datasheet. Use dedicated single-ended protectors like ESD7L5.0ST5G for non-differential signals.

NIV1241MTWTAG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
6-WDFN Exposed Pad
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Clamping:
43V
Technology:
Mixed Technology
Number of Circuits:
2
Applications:
USB
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
6-WDFNW (2x2.2)

NIV1241MTWTAG FAQ

1.How can I place an order for NIV1241MTWTAG through Aetrix?

Please submit a Request for Quotation (RFQ) for NIV1241MTWTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NIV1241MTWTAG reliable?

The price and inventory of NIV1241MTWTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NIV1241MTWTAG is usually 5 days.

3.What payment methods are accepted for NIV1241MTWTAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NIV1241MTWTAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NIV1241MTWTAG?

NIV1241MTWTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NIV1241MTWTAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NIV1241MTWTAG?

For technical support, including NIV1241MTWTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NIV1241MTWTAG requirements.

6.How does Aetrix verify that NIV1241MTWTAG is sourced from the original manufacturer or authorized distributors?

All NIV1241MTWTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NIV1241MTWTAG meets industry standards.

7.What is the process for return or replacement of NIV1241MTWTAG?

All NIV1241MTWTAG units undergo pre-shipment inspection (PSI). If there is an issue with NIV1241MTWTAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NIV1241MTWTAG part is unused and in its original packaging.

Return procedure for NIV1241MTWTAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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