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onsemi NJVMJB44H11T4G
- Part No.:
- NJVMJB44H11T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NJVMJB44H11T4G.pdf
- Description:
- TRANS NPN 80V 10A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:664
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Product details
Overview
NJVMJB44H11T4G from onsemi is an automotive-grade NPN silicon power transistor in D2PAK (TO-263) package, rated for 80 V VCEO, 10 A continuous collector current, and 50 W power dissipation at TC = 25 °C. It delivers low 1.0 V max VCE(sat) at 8 A/0.4 A drive and supports fast switching with 300 ns combined delay + rise time - used as output stage switch in DC-DC converters and motor driver circuits.
For engineers reviewing the NJVMJB44H11T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, thermal resistance (RJC = 2.5 °C/W), safe operating area up to 150 °C junction temperature, and Pb-free D2PAK tape-and-reel packaging for high-volume SMT assembly.
Technical Context
This NPN bipolar junction transistor operates in linear or saturated switching mode with DC current gain (hFE) of 60 min at IC = 2 A and 40 min at IC = 4 A. Its dynamic performance includes fT = 50 MHz and Ccb = 130 pF, enabling use in medium-frequency power amplification and PWM-driven loads.
The device features ESD robustness per Human Body Model Class 3B (>8 kV) and Machine Model Class C (>400 V), plus UL 94 V-0 epoxy encapsulation. Thermal design is enabled by validated RJA = 75 °C/W and transient thermal impedance curves supporting pulsed-power derating analysis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum collector-emitter voltage before breakdown; defines maximum bus voltage compatibility in buck converters or motor H-bridge arms. |
| IC (cont.) | 10 A - Continuous collector current rating at TC = 25 °C; determines steady-state load handling without forced cooling. |
| VCE(sat) | 1.0 V max @ 8 A/0.4 A - Low saturation voltage minimizes conduction loss and heat generation in switching applications. |
| fT | 50 MHz - Transition frequency confirms usable bandwidth for audio-frequency amplification and <100 kHz PWM switching. |
| RJC | 2.5 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting with predictable temperature rise under full load. |
| hFE | 60 min @ IC = 2 A - Sufficient DC gain for base-drive simplicity in discrete driver stages without complex current-mirror biasing. |
| TJ range | −55 to +150 °C - Extended junction temperature range supports operation in under-hood automotive environments and industrial enclosures. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed metal tab (pin 2 and 4) for thermal and electrical connection to collector; 3-pin configuration with pin 1 = Base, pin 2 = Collector, pin 3 = Emitter, pin 4 = Collector (dual-collector layout).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Base | Control input requiring ~0.4 A base current to saturate at 8 A collector load; driven directly by logic-level or gate-driver IC outputs. |
| Pin 2 | Collector | Main high-side current path terminal; electrically and thermally connected to exposed copper tab for heatsinking and low-inductance PCB routing. |
| Pin 3 | Emitter | Reference node for base drive and current sensing; tied to ground or low-side shunt in common-emitter configurations. |
| Pin 4 | Collector | Second collector connection sharing same internal node as Pin 2; improves current sharing and thermal spreading across PCB copper area. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power electronics including engine control modules and body electronics where reliability over temperature and vibration is critical. |
| Low VCE(sat) | Reduces conduction losses to ≤8 W at 8 A, lowering thermal stress and enabling smaller heatsinks in space-constrained designs. |
| Dual-collector D2PAK | Enhances thermal dissipation and current-carrying capacity via parallel collector paths - improves SOA margin during pulse-load transients. |
| UL 94 V-0 epoxy | Meets flammability safety requirements for enclosed industrial and automotive systems without additional conformal coating. |
| ESD robustness | HBM >8 kV and MM >400 V allow safe handling and assembly in standard manufacturing lines without special ESD controls. |
Applications
| Automotive DC-DC Converters | Industrial Motor Driver Outputs |
|---|---|
|
Use Scenario: Step-down conversion from 48 V battery rail to 12 V auxiliary supply in EVs and HEVs. IC Role / Device Role / Timing Role: Main NPN switch in synchronous or quasi-resonant converter topology, operating at 50–200 kHz. Use Value: 1.0 V VCE(sat) and 50 MHz fT enable high efficiency and stable regulation across wide load and temperature ranges. |
Use Scenario: High-current half-bridge output stage driving 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element controlled by isolated gate driver, handling repetitive 10 A pulses. Use Value: Dual-collector D2PAK package and −55 to +150 °C rating ensure reliable operation under continuous thermal cycling and mechanical shock. |
| Switching Regulator Output Stages | Power Amplifier Driver Circuits |
|
Use Scenario: Primary switching transistor in 50 W offline flyback or forward converter for industrial power supplies. IC Role / Device Role / Timing Role: High-voltage NPN switch turning on/off primary winding current with 80 V VCEO headroom. Use Value: 80 V rating and 300 ns td+tr support efficient operation at 65–132 kHz while maintaining SOA compliance. |
Use Scenario: Class AB output stage driver in 20 W audio amplifier for public address systems. IC Role / Device Role / Timing Role: Linear-mode power transistor delivering low-distortion current into 4 Ω speaker load. Use Value: hFE ≥60 at 2 A and low VBE(sat) = 1.5 V enable precise bias control and minimal crossover distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJB44H11T4G | Same die, non-automotive grade; lacks AEC-Q101 qualification and NJV prefix-controlled traceability. | Suitable for industrial/commercial power supplies but not automotive OEM programs requiring PPAP documentation. | Select MJB44H11T4G only when automotive qualification is unnecessary and cost sensitivity outweighs long-term supply chain traceability. |
| STP16NF06L | N-channel MOSFET (60 V, 16 A), logic-level gate, RDS(on) = 0.05 Ω - lower conduction loss but higher gate charge than NJVMJB44H11T4G. | Better for high-frequency SMPS (>500 kHz); less suitable for linear-mode amplification due to transconductance nonlinearity. | Choose STP16NF06L when switching speed and gate-drive simplicity are prioritized over analog linearity and thermal SOA robustness. |
Compared with MJB44H11T4G, NJVMJB44H11T4G adds automotive qualification and enhanced process control, while STP16NF06L offers MOSFET advantages in gate drive and high-frequency efficiency but sacrifices bipolar linearity and rugged SOA for analog or pulse-load applications.
Availability
NJVMJB44H11T4G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drivers, and switching regulator output stages requiring stable component supply, AEC-Q101 compliance, and Pb-free D2PAK packaging.
Supply support for NJVMJB44H11T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier focused on energy-efficient electronics, delivering power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
NJVMJB44H11T4G belongs to onsemi's complementary power transistor family designed for robust, high-current switching and amplification in harsh-environment applications - especially automotive power conversion and industrial actuation.
FAQ
What is the maximum junction temperature rating for NJVMJB44H11T4G?
The NJVMJB44H11T4G has a specified operating junction temperature range of −55 °C to +150 °C. This rating is validated per AEC-Q101 stress testing and enables use in under-hood automotive locations and sealed industrial enclosures where ambient temperatures exceed 105 °C. The device's thermal resistance (RJC = 2.5 °C/W) allows accurate junction temperature calculation during thermal design.
Is NJVMJB44H11T4G pin-compatible with MJB44H11T4G?
Yes, NJVMJB44H11T4G is physically and electrically pin-compatible with MJB44H11T4G - both use identical D2PAK (Case 418B) packaging with pin 1 = Base, pin 2 = Collector, pin 3 = Emitter, pin 4 = Collector. The NJV prefix denotes automotive-specific process controls and AEC-Q101 qualification, but pinout, footprint, and electrical specifications match exactly.
Does NJVMJB44H11T4G require a heatsink in typical applications?
Yes, NJVMJB44H11T4G requires a heatsink when operating above ~2 A continuous current or in ambient temperatures exceeding 50 °C. With RJA = 75 °C/W, even at 5 A and 25 °C ambient, junction temperature exceeds 125 °C without thermal management. The exposed collector tab must be soldered to a minimum 250 mm² copper pour or mounted to an external heatsink using thermal interface material.
What is the Safe Operating Area (SOA) limit for NJVMJB44H11T4G at 100 µs pulse width?
Per Figure 2 in the NJVMJB44H11T4G datasheet, the SOA limit at 100 µs pulse width and TC ≤ 70 °C is approximately 35 A at 40 V VCE. This second-breakdown-limited boundary ensures reliable operation during short-circuit events or startup surges in motor drives and power supplies - provided case temperature remains within specification and PCB copper provides adequate thermal mass.
Can NJVMJB44H11T4G be used in linear amplifier applications?
Yes, NJVMJB44H11T4G is suitable for linear amplifier output stages, supported by its hFE ≥60 at 2 A, low VBE(sat) = 1.5 V, and SOA curve extending to DC operation. Its bipolar construction provides superior linearity versus MOSFETs in Class AB audio drivers, though thermal design must accommodate continuous power dissipation - e.g., 25 W at 5 A/5 V drop requires active cooling.
NJVMJB44H11T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 2 W
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
NJVMJB44H11T4G FAQ
1.How can I place an order for NJVMJB44H11T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJB44H11T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJB44H11T4G reliable?
The price and inventory of NJVMJB44H11T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJB44H11T4G is usually 5 days.
3.What payment methods are accepted for NJVMJB44H11T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJB44H11T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJB44H11T4G?
NJVMJB44H11T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJB44H11T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJB44H11T4G?
For technical support, including NJVMJB44H11T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJB44H11T4G requirements.
6.How does Aetrix verify that NJVMJB44H11T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJB44H11T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJB44H11T4G meets industry standards.
7.What is the process for return or replacement of NJVMJB44H11T4G?
All NJVMJB44H11T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJB44H11T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJB44H11T4G part is unused and in its original packaging.
Return procedure for NJVMJB44H11T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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