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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NJVMJB45H11T4G

Name: NJVMJB45H11T4G
Brand: onsemi
SKU: NJVMJB45H11T4G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NJVMJB45H11T4G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NJVMJB45H11T4G.pdf

Description:: TRANS PNP 80V 10A D2PAK

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Product details

Overview

NJVMJB45H11T4G from onsemi is a PNP silicon power transistor in D2PAK (TO-263) package, rated for 80 V V_CEO, 10 A continuous collector current, and 50 W power dissipation at T_C = 25 °C. It delivers low 1.0 V max V_CE(sat) at 8 A, supports fast switching with 135 ns rise+delay time, and is AEC-Q101 qualified for automotive power stages.

For engineers reviewing the NJVMJB45H11T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its complementary pairing with NJVMJB44H11T4G, thermal resistance (R_JC = 2.5 °C/W), safe operating area up to 150 °C junction temperature, and Pb-free D2PAK surface-mount compatibility.

Technical Context

This PNP bipolar junction transistor operates as a high-current, medium-voltage switching and amplification device. Its design targets driver and output stages where low saturation voltage and robust thermal performance are critical - confirmed by R_JC = 2.5 °C/W and T_J range of −55 to +150 °C.

It exhibits f_T = 40 MHz gain-bandwidth product and dynamic switching parameters including t_s = 500 ns storage time and t_f = 100 ns fall time under 5 A/0.5 A drive conditions. The device is specified with ESD ratings >8 kV HBM and >400 V MM, and meets UL 94 V-0 flammability standard.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum collector-emitter blocking voltage before breakdown; defines upper rail limit in switching regulators.
I_C (cont.)	10 A - Continuous collector current capability at T_C = 25 °C; enables use in high-power motor drivers and DC-DC converters.
V_CE(sat)	1.0 V max @ 8 A - Low conduction loss reduces heat generation and improves efficiency in saturated-switching applications.
f_T	40 MHz - Gain-bandwidth product confirming suitability for audio-frequency and medium-speed switching (≤100 kHz).
R_JC	2.5 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting for reliable 50 W dissipation at case temperatures ≤70 °C.
h_FE	60 min @ I_C = 2 A - DC current gain sufficient for base-driven operation without excessive drive current overhead.
T_J Range	−55 to +150 °C - Extended junction temperature range supports under-hood automotive and industrial ambient environments.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad (pin 2 and 4 tied internally to collector), 3-pin configuration (Base, Collector, Emitter), and UL 94 V-0 compliant epoxy molding compound.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for bipolar current amplification; requires ~0.4 A drive current to saturate at 8 A collector load.
2	Collector	Main high-side current path; electrically connected to exposed metal tab for thermal and electrical grounding to heatsink.
3	Emitter	Current return path; tied to system ground or negative rail in high-side switch configurations.
4	Collector	Second collector connection - redundant terminal for enhanced current handling and lower inductance routing to heatsink.

Key Features

Feature	Design Value
Low V_CE(sat)	1.0 V max at 8 A ensures <1.2 W conduction loss per device, reducing thermal stress in parallel-output designs.
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, humidity testing, and HTOL - suitable for engine control and body electronics.
Complementary pairing	Designed as matched PNP counterpart to NJVMJB44H11T4G (NPN), enabling simplified push-pull and H-bridge driver stage layout.
Pb-free D2PAK	RoHS-compliant packaging with G suffix; compatible with lead-free reflow profiles and meets IPC-J-STD-020 moisture sensitivity level 3.
ESD robustness	8 kV HBM / 400 V MM rating eliminates need for external ESD protection in board-level integration for industrial controls.

Applications

Automotive Engine Control	Industrial DC-DC Converters
Use Scenario: High-side switching of fuel injector solenoids and ignition coils in 12 V/24 V engine management systems. IC Role / Device Role / Timing Role: PNP power switch controlling current flow from battery rail to inductive loads; operates in saturated on/off mode with microsecond-scale turn-off. Use Value: 1.0 V V_CE(sat) minimizes power loss during extended on-time, while 150 °C T_J rating ensures operation near hot engine blocks.	Use Scenario: Output stage in isolated flyback or forward converters delivering 5–20 A at 5–24 V for PLC I/O modules and sensor power supplies. IC Role / Device Role / Timing Role: Primary-side switching transistor in self-oscillating or PWM-controlled topologies; handles repetitive 50–100 kHz switching with low storage time. Use Value: 500 ns storage time and 100 ns fall time enable efficient hard-switching operation without excessive snubber losses.
Audio Power Amplifiers	Motor Driver Half-Bridges
Use Scenario: Complementary emitter-follower output stage in Class AB audio amplifiers driving 4–8 Ω speakers up to 50 W RMS. IC Role / Device Role / Timing Role: Linear-mode PNP output transistor delivering high peak current with minimal crossover distortion. Use Value: h_FE ≥60 at 2 A ensures stable bias control across temperature; 2.5 °C/W R_JC supports heatsink-limited thermal design.	Use Scenario: High-side switch in brushed DC motor H-bridges for robotics and HVAC actuators requiring bidirectional 10 A peak current. IC Role / Device Role / Timing Role: Saturated PNP switch enabling low-loss current sourcing to motor windings; paired with NPN low-side for full bridge control. Use Value: Complementary pinout and matching specs with NJVMJB44H11T4G simplify PCB layout and gate drive symmetry in dual-channel designs.

Automotive Engine Control

Industrial DC-DC Converters

Use Scenario: High-side switching of fuel injector solenoids and ignition coils in 12 V/24 V engine management systems.

IC Role / Device Role / Timing Role: PNP power switch controlling current flow from battery rail to inductive loads; operates in saturated on/off mode with microsecond-scale turn-off.

Use Value: 1.0 V V_CE(sat) minimizes power loss during extended on-time, while 150 °C T_J rating ensures operation near hot engine blocks.

Use Scenario: Output stage in isolated flyback or forward converters delivering 5–20 A at 5–24 V for PLC I/O modules and sensor power supplies.

IC Role / Device Role / Timing Role: Primary-side switching transistor in self-oscillating or PWM-controlled topologies; handles repetitive 50–100 kHz switching with low storage time.

Use Value: 500 ns storage time and 100 ns fall time enable efficient hard-switching operation without excessive snubber losses.

Audio Power Amplifiers

Motor Driver Half-Bridges

Use Scenario: Complementary emitter-follower output stage in Class AB audio amplifiers driving 4–8 Ω speakers up to 50 W RMS.

IC Role / Device Role / Timing Role: Linear-mode PNP output transistor delivering high peak current with minimal crossover distortion.

Use Value: h_FE ≥60 at 2 A ensures stable bias control across temperature; 2.5 °C/W R_JC supports heatsink-limited thermal design.

Use Scenario: High-side switch in brushed DC motor H-bridges for robotics and HVAC actuators requiring bidirectional 10 A peak current.

IC Role / Device Role / Timing Role: Saturated PNP switch enabling low-loss current sourcing to motor windings; paired with NPN low-side for full bridge control.

Use Value: Complementary pinout and matching specs with NJVMJB44H11T4G simplify PCB layout and gate drive symmetry in dual-channel designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJB45H11T4G	Same die, identical electrical specs, but lacks NJV prefix and AEC-Q101 qualification; non-automotive grade.	Not approved for automotive PPAP; suitable for industrial/commercial power supplies where qualification is not required.	Select MJB45H11T4G when cost sensitivity outweighs automotive compliance needs and traceability requirements.
STP16PF12	PNP MOSFET (not BJT); V_DSS = 120 V, I_D = 16 A, R_DS(on) = 120 mΩ - lower conduction loss but requires gate drive, no inherent current gain.	Better efficiency above 100 kHz; unsuitable for linear-mode audio due to transconductance nonlinearity and lack of h_FE.	Choose STP16PF12 only if switching frequency exceeds 200 kHz or gate-driven topology is mandatory; NJVMJB45H11T4G remains optimal for base-driven, medium-speed, linear-critical uses.

Compared with MJB45H11T4G, NJVMJB45H11T4G adds automotive traceability and qualification without electrical trade-offs; versus STP16PF12, it offers simpler drive architecture and superior linearity at the cost of higher conduction loss and lower frequency ceiling.

Availability

NJVMJB45H11T4G is available at Aetrix Electronics and suitable for automotive engine control units, industrial DC-DC converters, and audio power amplifier designs requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for NJVMJB45H11T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

NJVMJB45H11T4G belongs to onsemi's complementary power transistor family designed specifically for high-reliability, medium-power switching and amplification in harsh-environment applications - especially where AEC-Q101 validation and thermal robustness are mandatory.

FAQ

What is the maximum continuous collector current rating for NJVMJB45H11T4G?

The NJVMJB45H11T4G is rated for 10 A continuous collector current at case temperature T_C = 25 °C. Derating applies above 25 °C at 0.4 W/°C, limiting usable current in high-temperature environments unless heatsinking is optimized. This rating is validated under defined thermal test conditions per the onsemi datasheet.

Is NJVMJB45H11T4G pin-compatible with MJB45H11T4G?

Yes, NJVMJB45H11T4G is mechanically and electrically pin-compatible with MJB45H11T4G - both use identical D2PAK (TO-263) package with Base/Collector/Emitter pinout (pins 1/2/3). The NJV prefix denotes additional automotive process controls and AEC-Q101 qualification, but footprint and connectivity remain unchanged.

Does NJVMJB45H11T4G require a heatsink in typical operation?

Yes, NJVMJB45H11T4G requires a heatsink for any sustained operation above ~2 A at ambient temperatures >50 °C. With R_JC = 2.5 °C/W and R_JA = 75 °C/W, even at 5 A and 1.0 V V_CE(sat), junction temperature exceeds 150 °C without thermal management. Mounting the exposed collector tab to a heatsink is mandatory for rated 50 W dissipation.

What does the "NJV" prefix signify in NJVMJB45H11T4G?

The "NJV" prefix in NJVMJB45H11T4G indicates onsemi's automotive-grade variant: it undergoes additional process controls, lot traceability, and AEC-Q101 stress testing. It is PPAP-capable and intended for applications requiring automotive quality systems - distinct from standard MJB45H11T4G, which shares electrical specs but lacks this qualification.

Can NJVMJB45H11T4G be used in linear amplifier applications?

Yes, NJVMJB45H11T4G is suitable for linear amplifier output stages, as confirmed by its h_FE ≥60 at 2 A and stable gain vs. temperature curves. Its low V_CE(sat) and 150 °C T_J rating support Class AB operation, though thermal design must accommodate continuous power dissipation - unlike switching-only use cases.

NJVMJB45H11T4G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 10 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 4A, 1V

Power - Max:: 2 W

Frequency - Transition:: 40MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

NJVMJB45H11T4G FAQ

1.How can I place an order for NJVMJB45H11T4G through Aetrix?

Please submit a Request for Quotation (RFQ) for NJVMJB45H11T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NJVMJB45H11T4G reliable?

The price and inventory of NJVMJB45H11T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJB45H11T4G is usually 5 days.

3.What payment methods are accepted for NJVMJB45H11T4G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJB45H11T4G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NJVMJB45H11T4G?

NJVMJB45H11T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NJVMJB45H11T4G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NJVMJB45H11T4G?

For technical support, including NJVMJB45H11T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJB45H11T4G requirements.

6.How does Aetrix verify that NJVMJB45H11T4G is sourced from the original manufacturer or authorized distributors?

All NJVMJB45H11T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJB45H11T4G meets industry standards.

7.What is the process for return or replacement of NJVMJB45H11T4G?

All NJVMJB45H11T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJB45H11T4G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NJVMJB45H11T4G part is unused and in its original packaging.

Return procedure for NJVMJB45H11T4G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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