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onsemi NJVMJD112G
- Part No.:
- NJVMJD112G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD112G.pdf
- Description:
- TRANS NPN DARL 100V 2A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:21
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Product details
Overview
NJVMJD112G from ON Semiconductor is an NPN silicon Darlington transistor in D-PAK package, rated for 100 V VCEO, 2 A DC collector current, and 20 W collector dissipation at TC = 25°C, with built-in emitter-collector damper diode. It delivers high DC current gain (hFE = 500–12,000 at IC = 0.5–4 A) and is used in medium-power switching applications such as relay drivers and motor control circuits.
For engineers reviewing the NJVMJD112G datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington configuration with integrated damper diode, VCEO/VCBO = 100 V rating, 2 A continuous current capability, thermal performance in surface-mount D-PAK, and saturation voltage behavior under defined base drive conditions.
Technical Context
The NJVMJD112G implements a monolithic NPN Darlington pair with integrated damper diode connected between emitter and collector - enabling suppression of inductive kickback without external components. Its high hFE minimizes required base drive current while maintaining robust switching in medium-current loads.
Designed for surface-mount assembly, it uses the D-PAK (TO-252) package with exposed drain pad for thermal conduction. Electrical operation is characterized at TA = 25°C and TC = 25°C, with pulse testing limited to ≤300 µs width and ≤2% duty cycle for safe parameter validation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum sustainable collector-emitter voltage before breakdown; defines upper limit for inductive load switching. |
| IC (DC) | 2 A - Continuous collector current rating; determines maximum steady-state load current handling capability. |
| PC (TC=25°C) | 20 W - Collector power dissipation at case temperature 25°C; sets thermal design baseline for heatsink sizing. |
| hFE | 500–12,000 - DC current gain range across IC = 0.5–4 A; enables low-base-drive switching in driver stages. |
| VCE(sat) | 2–3 V - Saturation voltage at IC = 2–4 A with specified base current; directly impacts conduction loss and junction heating. |
| fT | 25 MHz - Current gain bandwidth product at VCE = 10 V, IC = 0.75 A; indicates usable frequency limit for small-signal amplification. |
Pinout & Package
Package: D-PAK (TO-252), surface-mount, with exposed thermal pad on collector side for PCB heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to turn on Darlington pair; requires current-limiting resistor in series for safe drive. |
| 2 (Collector) | Main power output terminal | Connected to load high-side; electrically tied to exposed thermal pad - must be soldered to copper pour for thermal management. |
| 3 (Emitter) | Power return terminal | Serves as common reference for load return path; internally connected to damper diode cathode. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated E-C damper diode | Eliminates need for external flyback diode in relay/inductor drive circuits, reducing BOM count and layout area. |
| D-PAK surface-mount package | Enables automated assembly and provides superior thermal performance vs. through-hole TO-220 for medium-power switching. |
| High hFE (≥500 @ IC = 0.5 A) | Reduces required base drive current by >10× vs. single bipolar transistor, easing microcontroller GPIO interface. |
| VCEO = 100 V rating | Supports 24–48 V industrial bus systems with margin for transient overvoltage, suitable for solenoid and DC motor control. |
Applications
| Relay Driver Circuits | DC Motor Control (Small) |
|---|---|
Use Scenario: Driving 12–24 V electromagnetic relays with coil currents up to 1.5 A in PLC I/O modules. IC Role / Device Role / Timing Role: Medium-power NPN Darlington switch providing high-current, low-drive interface between logic-level controller and inductive load. Use Value: Integrated damper diode prevents voltage spikes during relay de-energization, eliminating external snubber and improving system reliability. |
Use Scenario: Controlling bidirectional brushed DC motors (<100 W) in portable tools and HVAC actuators using H-bridge half-bridge configurations. IC Role / Device Role / Timing Role: High-gain switching element in low-side driver stage, delivering 2 A continuous current with minimal base drive overhead. Use Value: 20 W power dissipation at TC = 25°C supports sustained operation under PWM duty cycles up to 100% with proper heatsinking. |
| Solenoid Actuator Interface | Industrial Lamp Dimming |
Use Scenario: Switching 24 V DC solenoids in fluid control valves and pneumatic systems with peak currents up to 2 A. IC Role / Device Role / Timing Role: Robust NPN Darlington switch handling inrush and hold currents while suppressing back-EMF via internal damper diode. Use Value: VCEO = 100 V ensures safe operation during fast turn-off transients exceeding nominal supply voltage by ≥2×. |
Use Scenario: Phase-angle dimming control of 120 V AC incandescent lamps using triac-triggered zero-crossing circuits with DC bias generation. IC Role / Device Role / Timing Role: Constant-current source or level-shifting switch in optocoupler-driven gate trigger paths requiring stable 2 A pulsed output. Use Value: fT = 25 MHz allows clean response to fast-rising trigger pulses, ensuring precise timing alignment in dimmer control IC interfaces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD112G | Same die, identical specifications; NJVMJD112G is ON Semiconductor's updated nomenclature post-Fairchild integration (underscore → dash). | No functional difference; direct replacement per ON Semi documentation. | Select NJVMJD112G for new designs to ensure long-term availability and support under ON Semiconductor's product roadmap. |
| STN1210 | 100 V VCEO, 2 A IC, but no integrated damper diode; hFE = 1000–4000 (lower max gain); D-PAK package. | Requires external flyback diode; higher base drive needed; suitable where board space permits discrete protection. | Choose STN1210 only if damper diode is already implemented externally and tighter hFE tolerance is required. |
Compared with MJD112G and STN1210, the NJVMJD112G offers guaranteed drop-in compatibility with legacy Fairchild designs and unique integrated damper functionality - reducing component count and layout complexity where inductive load suppression is mandatory.
Availability
NJVMJD112G is available at Aetrix Electronics and suitable for relay driver circuits, DC motor control (small), solenoid actuator interface, and industrial lamp dimming requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for NJVMJD112G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.
The NJVMJD112G belongs to ON Semiconductor's legacy Fairchild bipolar power transistor portfolio, designed specifically for cost-sensitive, medium-power switching applications requiring high current gain and integrated protection in compact surface-mount packages.
FAQ
What is the pin configuration of the NJVMJD112G?
The NJVMJD112G uses a 3-pin D-PAK package with pin 1 = Base, pin 2 = Collector (connected to exposed thermal pad), and pin 3 = Emitter. This configuration matches standard D-PAK layout conventions and is confirmed in the official ON Semiconductor datasheet revision B. The NJVMJD112G integrates a damper diode between emitter and collector, so pin 3 serves as the diode anode and pin 2 as cathode.
Does the NJVMJD112G have an integrated damper diode?
Yes, the NJVMJD112G includes a built-in damper diode connected between emitter and collector - explicitly documented in the "Features" section and equivalent circuit diagram of the ON Semiconductor datasheet. This diode clamps inductive kickback during turn-off, eliminating the need for an external flyback diode in relay and solenoid driver applications using the NJVMJD112G.
What is the maximum continuous collector current for the NJVMJD112G?
The NJVMJD112G is rated for 2 A DC collector current (IC) at TA = 25°C, with derating above that ambient temperature. At case temperature TC = 25°C, it supports up to 20 W collector dissipation - confirming its suitability for sustained 2 A operation when properly heatsinked. This value is specified in the Absolute Maximum Ratings table of the NJVMJD112G datasheet.
Is the NJVMJD112G compatible with the original Fairchild MJD112?
Yes, the NJVMJD112G is the ON Semiconductor–branded successor to Fairchild's MJD112, with identical electrical specifications, pinout, and package. Per ON Semiconductor's integration notice, the underscore in "MJD112_G" was replaced with a dash to comply with their naming system - making NJVMJD112G the direct, functionally identical replacement for legacy MJD112 designs.
What is the typical DC current gain (hFE) of the NJVMJD112G at 2 A collector current?
At VCE = 3 V and IC = 2 A, the NJVMJD112G exhibits a minimum hFE of 1000 and a typical value up to 12,000, as specified in the Electrical Characteristics table. This high gain enables efficient switching with modest base drive - for example, only 2 mA base current can sustain 2 A collector current assuming hFE = 1000. These values are measured and guaranteed per the NJVMJD112G datasheet.
NJVMJD112G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 40mA, 4A
- Current - Collector Cutoff (Max):
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 2A, 3V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 25MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD112G FAQ
1.How can I place an order for NJVMJD112G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD112G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD112G reliable?
The price and inventory of NJVMJD112G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD112G is usually 5 days.
3.What payment methods are accepted for NJVMJD112G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD112G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD112G?
NJVMJD112G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD112G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD112G?
For technical support, including NJVMJD112G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD112G requirements.
6.How does Aetrix verify that NJVMJD112G is sourced from the original manufacturer or authorized distributors?
All NJVMJD112G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD112G meets industry standards.
7.What is the process for return or replacement of NJVMJD112G?
All NJVMJD112G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD112G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD112G part is unused and in its original packaging.
Return procedure for NJVMJD112G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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