onsemi NJVMJD112T4G

Overview

NJVMJD112T4G from ON Semiconductor is an NPN silicon Darlington transistor in D-PAK (TO-252) package, rated for 100 V V_CEO, 2 A DC collector current, and 20 W collector dissipation at T_C = 25°C. It integrates a built-in damper diode between emitter and collector and delivers high DC current gain (h_FE = 500–12,000 at I_C = 0.5–4 A), making it suitable for medium-power switching in industrial motor controls and relay drivers.

For engineers reviewing the NJVMJD112T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture with integrated damper diode, V_CE(sat) ≤ 3 V at I_C = 4 A / I_B = 40 mA, junction temperature rating of 150°C, and surface-mount D-PAK mechanical form factor.

Technical Context

The NJVMJD112T4G implements a monolithic NPN Darlington pair with emitter-follower configuration, enabling high current amplification while maintaining low base drive requirements. Its internal damper diode provides inherent flyback protection during inductive load switching, eliminating need for external snubbers in solenoid or relay driver circuits.

It operates with V_BE(on) = 2.8 V at I_C = 2 A and exhibits f_T = 25 MHz at V_CE = 10 V / I_C = 0.75 A - sufficient for medium-speed switching up to ~100 kHz. Safe operating area (SOA) is defined up to 5 ms pulse width with derating above 25°C case temperature.

Key Specifications

Pinout & Package

D-PAK (TO-252) surface-mount package with exposed drain pad for thermal enhancement; 3-terminal configuration optimized for PCB heat transfer and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Compared with NJVMJD112T4G, MJD112G offers identical performance with updated branding and logistics compliance, while BD679A requires redesign for diode integration and thermal management - making NJVMJD112T4G the optimal choice for new D-PAK-based industrial switching designs.

Availability

NJVMJD112T4G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor control modules, and solenoid actuator interfaces requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for NJVMJD112T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor components, specializing in power management, analog, and discrete devices for automotive, industrial, and cloud infrastructure markets.

The NJVMJD112T4G belongs to ON Semiconductor's legacy high-voltage Darlington transistor family, designed specifically for robust, low-component-count switching in industrial control systems where reliability under inductive stress is critical.

FAQ

What is the maximum continuous collector current rating for NJVMJD112T4G?

The NJVMJD112T4G is rated for 2 A DC collector current at case temperature T_C = 25°C. Derating is required above this temperature per the published power derating curve - e.g., at T_C = 100°C, maximum I_C drops to approximately 1.2 A. This rating assumes proper PCB copper area and thermal vias for heat dissipation in the D-PAK package.

Does NJVMJD112T4G include an integrated damper diode, and how is it connected?

Yes, the NJVMJD112T4G integrates a damper diode between emitter and collector, with cathode at the collector terminal and anode at the emitter terminal. This configuration clamps inductive flyback voltage during turn-off, protecting the transistor and simplifying circuit design - no external diode is needed for standard relay or solenoid driving.

What is the typical V_CE(sat) of NJVMJD112T4G under full-load conditions?

The NJVMJD112T4G specifies V_CE(sat) ≤ 3 V at I_C = 4 A and I_B = 40 mA. At nominal 2 A DC load with 8 mA base drive, V_CE(sat) is typically 2 V. This low saturation voltage reduces conduction losses and thermal generation, supporting efficient operation in thermally constrained industrial enclosures.

Is NJVMJD112T4G pin-compatible with older Fairchild MJD112 variants?

Yes, NJVMJD112T4G maintains identical pinout (Base–Collector–Emitter), package dimensions, and electrical specifications as the original Fairchild MJD112. The prefix "NJVM" reflects ON Semiconductor's post-integration nomenclature update, but the device is functionally and mechanically interchangeable in existing D-PAK layouts.

What is the junction-to-case thermal resistance (R_θJC) of NJVMJD112T4G?

The NJVMJD112T4G has a junction-to-case thermal resistance of 1.25°C/W, measured from die junction to the exposed D-PAK drain pad. This value enables effective heat transfer to external heatsinks or copper planes, supporting the full 20 W power dissipation rating when mounted on ≥1 in² of 2-oz copper with thermal vias.