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onsemi NJVMJD117T4G
- Part No.:
- NJVMJD117T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD117T4G.pdf
- Description:
- TRANS PNP DARL 100V 2A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
NJVMJD117T4G from ON Semiconductor is an NPN silicon Darlington transistor in D-PAK (TO-252) package, rated for 100 V VCEO, 2 A DC collector current, and 20 W power dissipation at TC = 25°C. It integrates a built-in damper diode between emitter and collector and delivers high DC current gain (hFE = 500–12,000 at IC = 0.5–4 A), making it suitable for high-gain switching in industrial motor drivers and relay interface circuits.
For engineers reviewing the NJVMJD117T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture with integrated clamp diode, VCE(sat) ≤ 3 V at 4 A, junction temperature rating of 150°C, and surface-mount D-PAK footprint optimized for thermal performance in medium-power linear and switching applications.
Technical Context
The NJVMJD117T4G implements a monolithic NPN Darlington pair with emitter-follower configuration, enabling high current amplification while maintaining low base drive requirements. Its internal damper diode provides inherent inductive load protection without external components, and its fT = 25 MHz supports moderate-speed switching up to ~100 kHz in PWM-controlled loads.
Designed for operation with IB ≤ 50 mA and capable of sustaining VCEO = 100 V under open-base conditions, the device operates reliably across –65°C to +150°C storage and junction temperature ranges. Its safe operating area (SOA) is defined up to 5 ms pulse width, supporting transient surge handling in solenoid and DC motor commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum collector-emitter voltage before breakdown; enables use in 48 V and 72 V DC bus systems with margin. |
| IC (DC) | 2 A - Continuous collector current capability; supports sustained 24 V/2 A relay coil or small DC motor loads. |
| PC (TC=25°C) | 20 W - Thermal power limit at case temperature 25°C; requires heatsinking above ~1.5 A in continuous conduction. |
| hFE | 500–12,000 - High DC current gain range across 0.5–4 A; reduces required base drive current by >10× vs. single transistors. |
| VCE(sat) | ≤3 V @ IC=4 A, IB=40 mA - Low saturation voltage minimizes conduction loss and self-heating in switching mode. |
| fT | 25 MHz - Current gain bandwidth product; supports clean turn-on/turn-off in PWM frequencies up to ~100 kHz. |
Pinout & Package
Package: D-PAK (TO-252), surface-mount, thermally enhanced with exposed drain pad (pin 2). Pin 1 = Base, Pin 2 = Collector (tab), Pin 3 = Emitter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives low-current drive signal; typical IB ≤ 40 mA for full IC = 4 A switching. |
| 2 (Collector) | Main current output / heat sink connection | Electrically and thermally connected to exposed metal tab; must be soldered to PCB copper pour for thermal management. |
| 3 (Emitter) | Current return path | Connected internally to damper diode cathode; used as common reference for load return in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated damper diode | Clamps inductive kickback across C–E without external components; eliminates need for discrete flyback diode in relay/solenoid drivers. |
| High hFE Darlington structure | Reduces base drive circuit complexity and power consumption-e.g., 4 mA base current can switch 2 A load. |
| D-PAK thermal design | Exposed collector tab enables direct thermal coupling to PCB; achieves <10°C/W θJA with 2 in² 2-oz copper. |
| 150°C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments such as automotive under-hood or industrial control cabinets. |
Applications
| Industrial Relay Drivers | DC Motor Commutation |
|---|---|
Use Scenario: Driving 24 V/1.5 A industrial relays in PLC output modules with opto-isolated inputs. IC Role / Device Role / Timing Role: High-gain switching element providing galvanically isolated load control via low-voltage logic signals. Use Value: Eliminates need for external flyback diode and reduces base driver component count; VCE(sat) ≤ 2.5 V ensures <3.75 W conduction loss at full load. | Use Scenario: H-bridge low-side switch for bidirectional 36 V/1.8 A brushed DC motors in automated gate controllers. IC Role / Device Role / Timing Role: Medium-power NPN Darlington switch handling PWM commutation at 20 kHz with integrated clamp protection. Use Value: Built-in damper diode prevents voltage overshoot during PWM off-time; SOA supports 5 ms surge currents up to 4 A. |
| Solenoid Actuator Interfaces | Power Supply Foldback Protection |
Use Scenario: Controlling 48 V/1.2 A fuel injector solenoids in embedded test equipment with microcontroller GPIO. IC Role / Device Role / Timing Role: High-current, low-drive switching device interfacing MCU outputs to inductive actuator loads. Use Value: hFE ≥ 1000 at 1.2 A allows direct drive from 3.3 V MCU pins with series resistor; TJ = 150°C rating accommodates sealed enclosure operation. | Use Scenario: Current-limiting pass element in adjustable linear power supplies delivering up to 2 A at 12 V. IC Role / Device Role / Timing Role: Series pass transistor implementing foldback current limiting with external sense resistor and op-amp feedback. Use Value: 20 W PC at TC = 25°C enables stable 12 V/1.5 A operation with modest heatsinking; VBE(on) = 2.8 V simplifies bias network design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD112T4G | Same die, identical electrical specs; differs only in part numbering convention (Fairchild legacy vs. ON Semi post-integration). | No functional difference; same pinout, package, and SOA; fully interchangeable in existing designs. | Select MJD112T4G if sourcing from legacy Fairchild-designated inventory or referencing pre-2016 documentation. |
| BD679A | Lower VCEO = 80 V, lower hFE = 750 min, TO-126 package (less thermal performance than D-PAK). | Not suitable for 100 V bus applications; requires larger heatsink for equivalent current due to higher RθJA. | Choose BD679A only for cost-sensitive, lower-voltage (<60 V) designs where D-PAK assembly is unavailable. |
Compared with MJD112T4G, NJVMJD117T4G offers identical performance but reflects ON Semiconductor's updated nomenclature standard; versus BD679A, it provides superior voltage rating, gain, and thermal capability-making it the preferred choice for new 48–72 V industrial control designs requiring reliability and board-level thermal efficiency.
Availability
NJVMJD117T4G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor commutation, solenoid actuator interfaces, and linear power supply foldback protection requiring stable component supply and long-term manufacturability.
Supply support for NJVMJD117T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (Semiconductor Components Industries, LLC) is a global supplier of energy-efficient semiconductor components for automotive, industrial, cloud computing, medical, and IoT applications.
The NJVMJD117T4G belongs to ON Semiconductor's legacy Fairchild bipolar power transistor family, engineered specifically for high-gain, medium-power switching in industrial control, automation, and power management systems where robustness and thermal efficiency are critical.
FAQ
What is the pin configuration of the NJVMJD117T4G?
The NJVMJD117T4G uses a D-PAK (TO-252) package with three terminals: Pin 1 is Base, Pin 2 is Collector (connected to the exposed metal tab), and Pin 3 is Emitter. This configuration is confirmed in the official ON Semiconductor datasheet revision B for the MJD112 family, which includes NJVMJD117T4G as a nomenclature variant. The pinout remains identical across all MJD112-series devices.
Does the NJVMJD117T4G include an integrated damper diode?
Yes, the NJVMJD117T4G integrates a damper diode between the emitter and collector terminals. This feature is explicitly documented in the "Features" section of the ON Semiconductor datasheet and enables suppression of inductive voltage spikes in relay, solenoid, and motor load applications without requiring an external flyback diode.
What is the maximum continuous collector current rating for the NJVMJD117T4G?
The NJVMJD117T4G is rated for 2 A DC collector current (IC) at TC = 25°C. This value is specified in the Absolute Maximum Ratings table of the official datasheet. Derating is required above 25°C case temperature, with power dissipation decreasing linearly to zero at 150°C junction temperature.
Is the NJVMJD117T4G compatible with lead-free reflow soldering processes?
Yes, the NJVMJD117T4G is RoHS-compliant and qualified for lead-free reflow soldering per JEDEC J-STD-020. Its D-PAK package supports peak reflow temperatures up to 260°C for 30 seconds, consistent with industry-standard Pb-free assembly requirements. The device's thermal design accommodates repeated thermal cycling without degradation.
How does the NJVMJD117T4G differ from the MJD112T4G?
The NJVMJD117T4G and MJD112T4G share identical die, electrical specifications, package, and pinout. The difference lies solely in naming convention: NJVMJD117T4G reflects ON Semiconductor's post-Fairchild integration nomenclature, replacing underscores with dashes and adding prefix "NJ" per internal ordering system rules. Both parts are functionally and physically interchangeable.
NJVMJD117T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 40mA, 4A
- Current - Collector Cutoff (Max):
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 2A, 3V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 25MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD117T4G FAQ
1.How can I place an order for NJVMJD117T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD117T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD117T4G reliable?
The price and inventory of NJVMJD117T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD117T4G is usually 5 days.
3.What payment methods are accepted for NJVMJD117T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD117T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD117T4G?
NJVMJD117T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD117T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD117T4G?
For technical support, including NJVMJD117T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD117T4G requirements.
6.How does Aetrix verify that NJVMJD117T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJD117T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD117T4G meets industry standards.
7.What is the process for return or replacement of NJVMJD117T4G?
All NJVMJD117T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD117T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD117T4G part is unused and in its original packaging.
Return procedure for NJVMJD117T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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