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onsemi NJVMJD122T4G-VF01

Part No.:
NJVMJD122T4G-VF01
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixNJVMJD122T4G-VF01.pdf
Description:
TRANS NPN DARL 100V 8A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,596

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Product details

Overview

NJVMJD122T4G-VF01 from onsemi is an AEC-Q101-qualified complementary NPN Darlington power transistor in DPAK (TO-252) package, rated for 8 A continuous collector current, 100 V collector-emitter sustaining voltage, and 20 W power dissipation at TC = 25 °C. It features monolithic construction with built-in base-emitter shunt resistors, high DC current gain (hFE = 1000–12,000), and is designed for low-speed switching and general-purpose amplifier applications in automotive and industrial motor control circuits.

For engineers reviewing the NJVMJD122T4G-VF01 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V VCEO(sus), 2.0 V typical VCE(sat) at IC = 4 A / IB = 16 mA, integrated base resistors enabling direct microcontroller drive, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

The NJVMJD122T4G-VF01 implements a monolithic Darlington pair with internal base-emitter shunt resistors (≈8 kΩ and ≈120 Ω), eliminating external bias components. Its architecture delivers high hFE (≥1000 at IC = 4 A) while maintaining low saturation voltage and robust thermal performance via DPAK's low RθJC of 6.25 °C/W.

It operates within −65 °C to +150 °C junction temperature range and supports surface-mount assembly with Pb-free, halogen-free, RoHS-compliant packaging. The device meets ESD ratings of >8000 V (HBM Class 3B) and >400 V (MM Class C), ensuring reliability in automated manufacturing and harsh environments.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO(sus) 100 V - Sustains full rated voltage with IC = 30 mA and open base, enabling use in 24 V/48 V automotive power stages without derating.
IC (continuous) 8 A - Supports high-current loads such as solenoid drivers, fan motors, and relay coils without external heat sinking at moderate duty cycles.
hFE 1000–12,000 - High DC current gain reduces required base drive current, allowing direct interface with 3.3 V/5 V logic and MCU GPIOs.
VCE(sat) 2.0 V max @ IC = 4 A / IB = 16 mA - Limits conduction loss to ≤8 W at 4 A, improving thermal efficiency in linear and saturated-switching modes.
RθJC 6.25 °C/W - Enables effective heat transfer to PCB copper pour or heatsink, supporting 20 W power dissipation at TC = 25 °C.
Package DPAK (TO-252-3) - Surface-mount outline with exposed collector tab (pins 2 & 4) for low-inductance, high-current routing and thermal conduction.
AEC-Q101 Qualified - Validated for automotive applications including engine control modules, body electronics, and ADAS power subsystems.

Pinout & Package

DPAK (TO-252-3) package with exposed collector tab (pins 2 and 4 electrically connected), 6.10 mm × 6.54 mm footprint, 2.28 mm height, and thermally enhanced plastic body meeting UL 94 V-0 at 0.125 in thickness.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Base Control input; internally connected to first transistor's base and shunt resistor network - accepts TTL/CMOS-compatible drive levels.
Pin 2 Collector Main high-current output node; electrically tied to Pin 4 - connects directly to load and heatsink plane for optimal thermal path.
Pin 3 Emiter Power return path; referenced to system ground or low-side switch common - forms emitter-follower output stage with low output impedance.
Pin 4 Collector Second collector terminal; internally shorted to Pin 2 - provides redundant connection for high-current routing and improved solder joint reliability.

Key Features

Feature Design Value
Monolithic Darlington with integrated shunt resistors Eliminates need for external base bias resistors, reducing BOM count and PCB area while ensuring stable turn-on/turn-off behavior.
High hFE ≥1000 @ IC = 4 A Enables <16 mA base drive for 4 A collector current - compatible with standard MCU outputs without buffer stages.
VCE(sat) ≤ 2.0 V @ IC/IB = 250 Minimizes power loss during saturation, critical for battery-powered systems and thermally constrained enclosures.
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full traceability, process controls, and failure mode analysis per ISO/TS 16949 requirements.
Pb-free, halogen-free, RoHS compliant Meets global environmental regulations and enables compatibility with lead-free reflow profiles (JEDEC J-STD-020).

Applications

Automotive Fan Control Industrial Solenoid Driver

Use Scenario: Controlling 12 V/24 V brushed DC cooling fans in engine bay modules where ambient temperatures exceed 105 °C.

IC Role / Device Role / Timing Role: Low-speed switching power transistor providing PWM-driven current amplification between MCU and fan motor.

Use Value: AEC-Q101 qualification ensures operation at TJ = 150 °C; built-in base resistors simplify layout and eliminate discrete bias components.

Use Scenario: Driving 12 V/24 V hydraulic or pneumatic solenoids in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: High-current saturated switch interfacing programmable logic controller outputs to inductive actuator loads.

Use Value: 8 A continuous rating handles peak inrush currents; 100 V VCEO(sus) accommodates flyback transients up to 75 V without snubbers.

DC Motor Starter Circuit Relay Replacement Module

Use Scenario: Solid-state replacement for mechanical relays in 48 V e-bike or light EV starter circuits requiring silent, wear-free operation.

IC Role / Device Role / Timing Role: High-gain Darlington switch delivering >5 A stall current to brushed DC starter motor windings.

Use Value: hFE ≥1000 allows direct drive from 3.3 V microcontrollers; DPAK thermal performance sustains repeated cranking pulses.

Use Scenario: Replacing electromechanical relays in HVAC control panels where contact bounce, lifetime, and EMI are concerns.

IC Role / Device Role / Timing Role: Low-speed power switch isolating 24 V AC/DC control signals from 120 V AC load circuits via optocoupler interface.

Use Value: Integrated base resistors enable clean turn-on/turn-off waveforms; 200 pF Cob minimizes capacitive coupling noise in mixed-signal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD122T4G No NJV prefix; not AEC-Q101 qualified; identical electrical specs and DPAK package. Intended for industrial/commercial use only; unsuitable for automotive production without additional qualification. Select MJD122T4G for cost-sensitive non-automotive designs where AEC-Q101 is not mandated.
BD679A TO-126 package; lower IC = 4 A; VCEO = 80 V; no integrated base resistors; hFE = 750 min. Requires external base bias network; limited to lower-voltage, lower-power applications with less stringent thermal demands. Choose BD679A only when legacy TO-126 footprint is required and 80 V rating suffices.

Compared with MJD122T4G and BD679A, NJVMJD122T4G-VF01 uniquely combines AEC-Q101 qualification, 100 V rating, 8 A capability, and integrated biasing in DPAK - making it the only drop-in solution for automotive-grade high-current Darlington switching where reliability and regulatory compliance are mandatory.

Availability

NJVMJD122T4G-VF01 is available at Aetrix Electronics and suitable for automotive fan control, industrial solenoid driving, and DC motor starter circuits requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.

Supply support for NJVMJD122T4G-VF01 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier specializing in energy-efficient silicon and SiC solutions for automotive, industrial, cloud, and IoT applications.

The NJVMJD122T4G-VF01 belongs to onsemi's complementary Darlington power transistor family, engineered for robust, high-current switching in space-constrained, thermally demanding environments - especially where automotive qualification and simplified drive requirements are critical.

FAQ

What is the maximum continuous collector current rating for NJVMJD122T4G-VF01?

The NJVMJD122T4G-VF01 is rated for 8 A continuous collector current at TC = 25 °C. Derating applies above 25 °C at 0.16 W/°C for case-mounted operation. At TA = 25 °C (surface mount on minimum recommended pad), the rating drops to 1.75 A due to higher thermal resistance (RθJA = 71.4 °C/W). Always verify actual board-level thermal performance using measured junction temperature.

Does NJVMJD122T4G-VF01 require external base resistors?

No, NJVMJD122T4G-VF01 does not require external base resistors. It integrates monolithic base-emitter shunt resistors (≈8 kΩ and ≈120 Ω) as part of its Darlington structure. This design enables direct interface with microcontroller GPIOs and eliminates discrete bias components, simplifying circuit layout and improving reliability in high-vibration environments.

Is NJVMJD122T4G-VF01 suitable for automotive applications?

Yes, NJVMJD122T4G-VF01 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications including engine control, body electronics, and ADAS subsystems. Its −65 °C to +150 °C operating junction temperature range, >8000 V HBM ESD rating, and Pb-free RoHS-compliant DPAK package meet stringent automotive manufacturing and field reliability requirements.

What is the collector-emitter saturation voltage of NJVMJD122T4G-VF01?

The NJVMJD122T4G-VF01 has a maximum VCE(sat) of 2.0 V at IC = 4 A and IB = 16 mA, and 4.0 V at IC = 8 A and IB = 80 mA. These values reflect guaranteed worst-case performance under specified test conditions and define conduction losses critical for thermal design in high-duty-cycle switching applications.

How does the DPAK package of NJVMJD122T4G-VF01 improve thermal performance?

The DPAK (TO-252-3) package of NJVMJD122T4G-VF01 features an exposed collector tab (Pins 2 and 4) that serves as both high-current path and primary thermal conduction route to the PCB copper pour or heatsink. With RθJC = 6.25 °C/W, it achieves significantly lower junction-to-case resistance than through-hole alternatives, enabling 20 W power dissipation at TC = 25 °C and supporting compact, fanless designs.

NJVMJD122T4G-VF01 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Darlington
Current - Collector (Ic) (Max):
8 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
4V @ 8A, 80mA
Current - Collector Cutoff (Max):
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Power - Max:
1.75 W
Frequency - Transition:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

NJVMJD122T4G-VF01 FAQ

1.How can I place an order for NJVMJD122T4G-VF01 through Aetrix?

Please submit a Request for Quotation (RFQ) for NJVMJD122T4G-VF01 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NJVMJD122T4G-VF01 reliable?

The price and inventory of NJVMJD122T4G-VF01 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD122T4G-VF01 is usually 5 days.

3.What payment methods are accepted for NJVMJD122T4G-VF01?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD122T4G-VF01 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NJVMJD122T4G-VF01?

NJVMJD122T4G-VF01 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NJVMJD122T4G-VF01 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NJVMJD122T4G-VF01?

For technical support, including NJVMJD122T4G-VF01 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD122T4G-VF01 requirements.

6.How does Aetrix verify that NJVMJD122T4G-VF01 is sourced from the original manufacturer or authorized distributors?

All NJVMJD122T4G-VF01 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD122T4G-VF01 meets industry standards.

7.What is the process for return or replacement of NJVMJD122T4G-VF01?

All NJVMJD122T4G-VF01 units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD122T4G-VF01, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NJVMJD122T4G-VF01 part is unused and in its original packaging.

Return procedure for NJVMJD122T4G-VF01:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NJVMJD122T4G-VF01 Tags

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