onsemi NJVMJD253T4G
- Part No.:
- NJVMJD253T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD253T4G.pdf
- Description:
- TRANS PNP 100V 4A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:7,715
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NJVMJD253T4G from onsemi is a PNP silicon power transistor in DPAK-3 (CASE 369C) package, rated for 100 V VCEO, 4.0 A continuous collector current, and 12.5 W power dissipation at TC = 25 °C. It delivers high DC current gain (hFE = 40–180), low VCE(sat) (0.3–0.6 V), and 40 MHz fT, designed specifically for low-voltage, low-power, high-gain audio amplifier stages.
For engineers reviewing the NJVMJD253T4G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating curves, complementary NPN pairing (MJD243), AEC-Q101 qualification status, and surface-mount mechanical dimensions - all critical for audio output stage design, discrete power regulation, and automotive-grade linear amplification.
Technical Context
This PNP bipolar junction transistor operates in linear and switching modes with annular construction for low leakage and ESD robustness (HBM Class 3B). Its 100 V VCB/VCEO rating and 7.0 V VEB support rail-to-rail operation in split-supply audio circuits and complementary push-pull configurations.
Thermal performance is defined by RJC = 10 °C/W and RJA = 89.3 °C/W (FR-4, 75 mm², 2 oz Cu), enabling stable operation up to +150 °C junction temperature. The device uses Pb-free, halogen-free packaging compliant with RoHS and UL 94 V-0 flammability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Supports operation in ±48 V audio rails and 24 V automotive systems without breakdown. |
| IC (continuous) | 4.0 A - Enables driver-stage current delivery for 10–20 W Class-AB audio outputs. |
| PD @ TC = 25 °C | 12.5 W - Allows high-power dissipation when mounted on heatsinked PCB copper areas. |
| hFE (IC = 200 mA) | 40–180 - Ensures stable biasing and gain control across production lots and temperature ranges. |
| VCE(sat) (IC = 1.0 A) | ≤0.6 V - Minimizes conduction loss and self-heating in saturated-switching applications. |
| fT | 40 MHz - Supports wideband audio fidelity and fast transient response in feedback amplifiers. |
| RJA | 89.3 °C/W - Defines thermal limit for natural-convection cooling on standard FR-4 layouts. |
Pinout & Package
DPAK-3 (CASE 369C) surface-mount package: 6.10 × 6.54 × 2.28 mm body with 2.29 mm lead pitch; thermally enhanced backside tab (pin 2 & 4) for direct heatsinking; Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires ≤1.0 A drive capability and ≤7.0 V reverse bias. |
| 2 | Collector | Main high-current output terminal; electrically connected to exposed metal tab for thermal path. |
| 3 | Emitter | Reference node for PNP operation; tied to positive rail in common-emitter amplifier configurations. |
| 4 | Collector | Second collector connection - internally bonded to pin 2 for enhanced current handling and thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥40 at IC = 1.0 A ensures reliable bias stability in Class-A/B audio stages without active compensation. |
| Low VCE(sat) | 0.3 V typical at IC = 500 mA reduces voltage drop and improves efficiency in linear regulator and driver circuits. |
| AEC-Q101 qualified | Validated for automotive under-hood environments including temperature cycling, vibration, and humidity testing. |
| Annular construction | Minimizes ICBO ≤100 nA at 100 V and TJ = 125 °C - critical for low-noise preamp and standby leakage control. |
| UL 94 V-0 epoxy | Self-extinguishing encapsulation meets safety requirements for industrial and medical equipment enclosures. |
Applications
| Audio Power Amplifier | Automotive Infotainment Output Stage |
|---|---|
Use Scenario: Final output stage in 10–15 W Class-AB stereo amplifier using complementary MJD243/MJD253 pair. IC Role / Device Role / Timing Role: PNP current source in push-pull emitter-follower configuration delivering symmetrical swing into 4–8 Ω loads. Use Value: 40 MHz fT and low VCE(sat) preserve signal integrity and minimize crossover distortion at 20 kHz bandwidth. |
Use Scenario: Speaker driver in OEM dashboard audio system operating from 12 V battery supply with load dump protection. IC Role / Device Role / Timing Role: High-reliability PNP switch in regulated output stage meeting AEC-Q101 stress requirements. Use Value: 100 V VCEO withstands ISO 7637-2 pulse 5a (±100 V transients); -65 to +150 °C TJ range supports under-dash mounting. |
| Discrete Linear Regulator | Industrial Sensor Signal Conditioning |
Use Scenario: Pass element in adjustable 5–24 V, 3 A linear regulator for precision analog subsystems. IC Role / Device Role / Timing Role: Series-pass PNP transistor controlled by error amplifier feedback loop. Use Value: 12.5 W PD and RJC = 10 °C/W enable 3 A output at 5 V dropout without external heatsink on 2 oz Cu. |
Use Scenario: Current-source biasing for bridge-based pressure/temperature sensors in factory automation modules. IC Role / Device Role / Timing Role: Stable, low-drift PNP current sink providing 1–2 mA excitation with <100 nA leakage. Use Value: Annular construction limits ICBO to ≤100 nA at 125 °C - ensuring sensor offset drift remains <1 µV/°C over life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD253T4G | No NJV prefix; not AEC-Q101 qualified or PPAP capable; identical electrical specs and DPAK-3 package. | Suitable for commercial/industrial use only; lacks automotive traceability and change control. | Select NJVMJD253T4G when AEC-Q101 compliance, PPAP documentation, or unique site control is required. |
| PN3565 | TO-92 package; lower IC = 200 mA, VCEO = 40 V; hFE = 50–250 but no thermal spec or automotive qualification. | Limited to low-power signal switching; cannot replace NJVMJD253T4G in power amplifier or regulator roles. | Use only for non-power, non-automotive signal-level PNP functions where footprint and cost outweigh performance needs. |
Compared with MJD253T4G, NJVMJD253T4G adds AEC-Q101 qualification and PPAP capability without electrical trade-offs - making it the sole choice for automotive production. Compared with PN3565, it delivers 20× higher current, 2.5× higher voltage, and validated thermal reliability - eliminating risk in power-critical designs.
Availability
NJVMJD253T4G is available at Aetrix Electronics and suitable for audio amplifier design, automotive infotainment systems, and industrial linear regulator applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for NJVMJD253T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and IoT solutions.
The MJD243/MJD253 family was developed as complementary plastic power transistors for cost-sensitive, high-reliability linear audio and power control applications - emphasizing manufacturability, thermal robustness, and automotive qualification readiness.
FAQ
What is the maximum junction temperature rating for NJVMJD253T4G?
The NJVMJD253T4G has an operating junction temperature range of −65 °C to +150 °C, as specified in the Absolute Maximum Ratings table. This allows deployment in under-hood automotive environments and industrial enclosures with minimal forced cooling. Thermal derating begins above 25 °C case temperature at 0.1 W/°C for junction-to-case dissipation.
Is NJVMJD253T4G pin-compatible with MJD253T4G?
Yes, NJVMJD253T4G is mechanically and electrically pin-compatible with MJD253T4G - both use DPAK-3 (CASE 369C) package with identical pin 1 (Base), pin 2/4 (Collector), and pin 3 (Emitter) assignments. The NJV prefix denotes additional automotive process controls and PPAP capability, not physical layout changes.
Does NJVMJD253T4G require a heatsink in typical audio amplifier use?
In a 10 W Class-AB amplifier delivering 2 A peak collector current, NJVMJD253T4G typically requires a minimum 75 mm² copper pour (2 oz) per the datasheet's RJA = 89.3 °C/W condition. For sustained >3 W dissipation or ambient >50 °C, a small external heatsink or thermal via array is recommended to maintain TJ < 125 °C.
What is the safe operating area (SOA) limitation for NJVMJD253T4G at DC operation?
At DC, the NJVMJD253T4G SOA is bounded by second breakdown and thermal limits. Per Figure 2, at VCE = 20 V, maximum continuous IC is ~1.8 A; at VCE = 50 V, it drops to ~0.7 A. These values assume TC = 25 °C and single-pulse conditions - derating is required for repetitive or high-temperature operation.
How does the NJV prefix affect the reliability of NJVMJD253T4G compared to standard MJD253?
The NJV prefix indicates NJVMJD253T4G undergoes additional process controls, lot traceability, and AEC-Q101 qualification - including HTOL, TC, HAST, and ESD testing - ensuring consistent parametric stability and failure rate performance in automotive applications. Standard MJD253 lacks these controls and documentation.
NJVMJD253T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 200mA, 1V
- Power - Max:
- 1.4 W
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD253T4G FAQ
1.How can I place an order for NJVMJD253T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD253T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD253T4G reliable?
The price and inventory of NJVMJD253T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD253T4G is usually 5 days.
3.What payment methods are accepted for NJVMJD253T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD253T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD253T4G?
NJVMJD253T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD253T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD253T4G?
For technical support, including NJVMJD253T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD253T4G requirements.
6.How does Aetrix verify that NJVMJD253T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJD253T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD253T4G meets industry standards.
7.What is the process for return or replacement of NJVMJD253T4G?
All NJVMJD253T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD253T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD253T4G part is unused and in its original packaging.
Return procedure for NJVMJD253T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NJVMJD253T4G Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

