Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi NJVMJD3055T4G

Part No.:
NJVMJD3055T4G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixNJVMJD3055T4G.pdf
Description:
TRANS NPN 60V 10A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,528

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NJVMJD3055T4G from onsemi is an NPN silicon power transistor in DPAK (Case 369C) package, rated for 60 VCEO, 10 AC, and 20 W at TC = 25 °C, designed for general-purpose amplification and low-speed switching in automotive-grade power circuits.

For engineers reviewing the NJVMJD3055T4G datasheet, pinout, applications, or equivalent options, this part supports AEC-Q101 qualified designs requiring Pb-free compliance, thermal robustness up to +150 °C junction temperature, and validated safe operating area curves for reliable 10 A DC operation under pulsed conditions.

Technical Context

This NPN bipolar junction transistor operates with a minimum DC current gain (hFE) of 20 at IC = 4 A and VCE = 4 V, and delivers VCE(sat) ≤ 1.1 V at IC = 4 A / IB = 0.4 A. Its fT is 2 MHz at IC = 500 mA, VCE = 10 V, confirming suitability for audio-frequency amplification and relay/inductive load switching.

Thermal design is enabled by RJC = 6.25 °C/W and RJA = 71.4 °C/W (on minimum recommended pad), supporting surface-mount thermal management in automotive engine control modules and industrial motor drivers where junction temperature must stay below 150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO60 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe DC voltage headroom in 48 V automotive systems.
IC10 A - Continuous collector current rating; supports high-current loads like solenoids, fans, and lamp drivers without forced cooling.
PD @ TC = 25 °C20 W - Total power dissipation capability when case temperature is maintained at 25 °C; requires heatsinking for sustained 10 A operation.
hFE (min)20 @ IC = 4 A - Minimum DC current gain ensures predictable base drive requirements for saturation in switching applications.
VCE(sat)≤1.1 V @ IC/IB = 10 - Low saturation voltage minimizes conduction loss and self-heating during on-state operation.
fT2 MHz - Current-gain bandwidth product limits usable frequency range to audio and low-speed digital switching (<100 kHz).
RJA71.4 °C/W - Junction-to-ambient thermal resistance on standard PCB pads; determines required board copper area for thermal compliance.

Pinout & Package

DPAK-3 package (Case 369C), surface-mount, lead-free (Pb-Free), with exposed collector tab (pins 2 and 4 electrically common). Dimensions: 6.10 × 6.54 × 2.28 mm, pitch 2.29 mm.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal; requires ~0.4 A base current to saturate at 4 A collector current per datasheet test condition.
2 & 4CollectorElectrically common terminals; connected to internal die substrate and exposed metal tab for thermal and electrical connection to heatsink.
3EmiterCurrent output terminal; referenced to ground in common-emitter configuration; carries full load current.

Key Features

FeatureDesign Value
AEC-Q101 QualifiedValidated for automotive applications including engine control, body electronics, and chassis systems with PPAP capability.
UL 94 V-0 EpoxyFlame-retardant encapsulation meets safety standards for enclosed industrial and automotive enclosures.
High Safe Operating Area (SOA)Forward-bias SOA curve (Fig. 9) supports 10 A at 60 V for 1 ms pulses, enabling robust inductive load switching.
Pb-Free & RoHS CompliantMeets global environmental regulations; compatible with lead-free reflow soldering profiles (JEDEC J-STD-020).
Low VCE(sat) at High IC≤1.1 V at 4 A enables >90% efficiency in linear-regulator-style pass elements and low-loss switch-mode drivers.

Applications

Automotive Engine ControlIndustrial Motor Starter

Use Scenario: Driving fuel injector solenoids in 12 V/48 V hybrid powertrain ECUs.

IC Role / Device Role / Timing Role: NPN power switch controlling high-current inductive loads with precise pulse-width modulation.

Use Value: AEC-Q101 qualification and 150 °C TJ rating ensure reliability in under-hood environments with ambient temperatures up to 125 °C.

Use Scenario: Controlling 3-phase motor contactor coils in HVAC and pump control panels.

IC Role / Device Role / Timing Role: High-current DC switch interfacing microcontroller GPIOs to 10 A coil loads.

Use Value: 20 W power dissipation and SOA-rated pulse handling prevent thermal runaway during repeated coil energization cycles.

LED Lighting DriverDC Power Supply Pass Element

Use Scenario: Constant-current regulation for high-brightness LED strings in commercial signage and street lighting.

IC Role / Device Role / Timing Role: Linear pass transistor in adjustable current-sink topology.

Use Value: Stable hFE ≥20 across temperature ensures consistent current regulation without feedback loop instability.

Use Scenario: Adjustable linear regulator output stage delivering up to 8 A at 5–24 V in lab bench supplies.

IC Role / Device Role / Timing Role: Series pass element dissipating excess input-output voltage difference.

Use Value: Low VCE(sat) and 6.25 °C/W RJC enable efficient thermal coupling to heatsinks, reducing thermal derating penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD3055T4GNo NJV prefix; not AEC-Q101 qualified; same electrical specs and DPAK package.Suitable for industrial/commercial use only; lacks automotive qualification documentation and PPAP support.Select when automotive qualification is unnecessary and cost sensitivity outweighs long-term supply assurance.
STP16NF06LN-channel MOSFET (60 V, 16 A); logic-level gate drive; lower gate charge but higher VDS(on) at low current.Replaces BJT in switching-only roles; eliminates base drive complexity but requires gate protection against transients.Choose for high-efficiency, high-frequency PWM applications where gate drive simplicity and zero base current are critical.

Compared with MJD3055T4G, NJVMJD3055T4G adds AEC-Q101 validation and site-controlled traceability-critical for Tier 1 automotive programs-while STP16NF06L offers MOSFET advantages in gate-driven efficiency but lacks linear-mode stability and SOA robustness for analog pass applications.

Availability

NJVMJD3055T4G is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor starters, and LED lighting drivers requiring stable component supply with full AEC-Q101 compliance and Pb-free manufacturing.

Supply support for NJVMJD3055T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

NJVMJD3055T4G belongs to onsemi's complementary power transistor family, engineered for rugged, thermally stable amplification and switching in harsh-environment systems where reliability and regulatory compliance are mandatory.

FAQ

What is the maximum junction temperature rating for NJVMJD3055T4G?

The NJVMJD3055T4G has an operating junction temperature range of −55 °C to +150 °C, as specified in the Absolute Maximum Ratings table. This allows deployment in under-hood automotive environments and industrial enclosures where ambient temperatures exceed 100 °C, provided thermal design maintains TJ ≤ 150 °C using the published RJC and RJA values.

Is NJVMJD3055T4G pin-compatible with MJD3055T4G?

Yes, NJVMJD3055T4G uses the identical DPAK-3 package (Case 369C) and pinout (Base–Collector–Emitter–Collector) as MJD3055T4G. The only differences are the NJV prefix denoting AEC-Q101 qualification, enhanced process controls, and PPAP documentation-not physical or electrical incompatibility.

Does NJVMJD3055T4G support linear-mode operation?

Yes, NJVMJD3055T4G is characterized for linear operation, with Safe Operating Area (SOA) curves provided in Figure 9 of the datasheet. Its second-breakdown-limited SOA supports continuous DC and pulsed operation up to 10 A at 60 V, making it suitable for adjustable linear regulators and analog current sources.

What is the typical DC current gain (hFE) of NJVMJD3055T4G at 10 A collector current?

Per the Electrical Characteristics table, NJVMJD3055T4G guarantees hFE ≥ 5 at IC = 10 A and VCE = 4 V. Typical performance at this condition is higher-Figure 2 shows ~15–20 at 10 A-but design must use the guaranteed minimum of 5 for worst-case base drive calculation.

How does the thermal resistance RJA of NJVMJD3055T4G depend on PCB layout?

The stated RJA = 71.4 °C/W assumes mounting on the minimum recommended copper pad size per the datasheet. Increasing copper area-especially connecting the exposed collector tab to large internal or external ground planes-can reduce RJA by 20–40%, directly improving power handling and thermal margin for NJVMJD3055T4G in high-duty-cycle applications.

NJVMJD3055T4G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
10 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Current - Collector Cutoff (Max):
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Power - Max:
1.75 W
Frequency - Transition:
2MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

NJVMJD3055T4G FAQ

1.How can I place an order for NJVMJD3055T4G through Aetrix?

Please submit a Request for Quotation (RFQ) for NJVMJD3055T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NJVMJD3055T4G reliable?

The price and inventory of NJVMJD3055T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD3055T4G is usually 5 days.

3.What payment methods are accepted for NJVMJD3055T4G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD3055T4G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NJVMJD3055T4G?

NJVMJD3055T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NJVMJD3055T4G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NJVMJD3055T4G?

For technical support, including NJVMJD3055T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD3055T4G requirements.

6.How does Aetrix verify that NJVMJD3055T4G is sourced from the original manufacturer or authorized distributors?

All NJVMJD3055T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD3055T4G meets industry standards.

7.What is the process for return or replacement of NJVMJD3055T4G?

All NJVMJD3055T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD3055T4G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NJVMJD3055T4G part is unused and in its original packaging.

Return procedure for NJVMJD3055T4G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NJVMJD3055T4G Tags

  • NJVMJD3055T4G
  • NJVMJD3055T4G PDF
  • NJVMJD3055T4G Datasheet
  • NJVMJD3055T4G Specifications
  • NJVMJD3055T4G Images
  • onsemi
  • onsemi NJVMJD3055T4G
  • Buy NJVMJD3055T4G
  • NJVMJD3055T4G Price
  • NJVMJD3055T4G Distributor
  • NJVMJD3055T4G Supplier
  • NJVMJD3055T4G Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER