Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi NJVMJD31CRLG

Part No.:
NJVMJD31CRLG
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixNJVMJD31CRLG.pdf
Description:
TRANS NPN 100V 3A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,802

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NJVMJD31CRLG from onsemi is an NPN complementary power transistor in DPAK (Case 369C) surface-mount package, rated for 100 VCEO, 3 A continuous collector current, and 15 W power dissipation at TC = 25 °C. It serves as a general-purpose amplifier and low-speed switching device in automotive and industrial power stages, including linear regulators and relay drivers.

For engineers reviewing the NJVMJD31CRLG datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, 100 V breakdown rating, 1.2 V typical VCE(sat) at 3 A/375 mA, thermal resistance of 8.3 °C/W (junction-to-case), and Pb-free RoHS-compliant DPAK packaging.

Technical Context

This NPN bipolar junction transistor operates with DC current gain (hFE) of 10–50 at IC = 3 A and VCE = 4 V, and delivers fT = 3 MHz at IC = 500 mA, VCE = 10 V. Its safe operating area supports single-pulse operation up to 3 A at 100 V with 1 ms pulse width.

The device features electrically similar characteristics to the TIP31 series but with enhanced voltage rating and automotive-grade qualification. It exhibits VBE(on) ≤ 1.8 V at IC = 3 A and maintains ICEO ≤ 50 µA at VCE = 100 V, ensuring stable cutoff behavior under high-voltage bias conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 100 V - Maximum collector-emitter voltage before avalanche breakdown; enables use in 48 V and higher industrial bus applications.
IC (continuous) 3.0 A - Sustained collector current capability; supports medium-power switching without forced cooling at moderate duty cycles.
PD @ TC = 25 °C 15 W - Power dissipation limit when mounted on minimum recommended copper pad (165 mm², 1 oz Cu); defines thermal design baseline.
VCE(sat) ≤1.2 V @ IC = 3 A, IB = 375 mA - Low saturation voltage reduces conduction loss in linear and switching modes.
hFE 10–50 @ IC = 3 A, VCE = 4 V - Confirmed DC current gain range ensures predictable base drive requirements.
RθJC 8.3 °C/W - Junction-to-case thermal resistance; critical for heatsink interface design in surface-mount power stage layouts.
AEC-Q101 Qualified - Validated for automotive temperature cycling, humidity, and mechanical stress; supports PPAP documentation.

Pinout & Package

DPAK (Case 369C) surface-mount package with 4-terminal configuration: thermally enhanced die attach via exposed collector tab (Pins 2 and 4), standard leadframe layout optimized for PCB heat spreading.

Pin/Terminal Circuit Role Design Meaning
1 Base Control input terminal; requires ≥375 mA base drive for full saturation at 3 A collector current.
2 Collector Main high-current output node; electrically connected to exposed metal tab for thermal and electrical path to heatsink or ground plane.
3 Emitter Reference terminal for current flow; tied to system ground or low-side return in common-emitter configurations.
4 Collector Second collector connection-internally bonded to Pin 2; must be soldered to same copper pour for optimal thermal performance.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive underhood environments (-40 °C to +150 °C junction); supports PPAP submission for OEM programs.
100 V VCEO rating Enables direct use in 72 V battery systems and industrial 100 V rail applications without derating or series stacking.
DPAK tape-and-reel (1800 pcs) Optimized for automated SMT placement; eliminates manual handling and supports high-volume production line integration.
Pb-free and RoHS compliant Meets global environmental regulations; compatible with lead-free reflow profiles up to 260 °C peak solder temperature.
UL 94 V-0 epoxy Flame-retardant encapsulation meets safety standards for enclosed power modules and industrial control cabinets.

Applications

Automotive Linear Regulators Industrial Relay Drivers

Use Scenario: High-side pass transistor in 12 V/24 V automotive linear regulators supplying infotainment or ADAS subsystems.

IC Role / Device Role / Timing Role: NPN power switch regulating output voltage via emitter-follower configuration with feedback control loop.

Use Value: 100 V rating accommodates load-dump transients up to ±100 V; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.

Use Scenario: Driving 24 VDC industrial relays with coil currents up to 2.5 A in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-speed saturated switch turning relay coils on/off with minimal VCE(sat) loss.

Use Value: 1.2 V VCE(sat) limits power dissipation to <1.5 W at 2.5 A, enabling compact PCB layout without external heatsink.

DC Motor Speed Control Power Supply OR-ing Circuits

Use Scenario: PWM-controlled H-bridge low-side switch for brushed DC motors in HVAC actuators and power seats.

IC Role / Device Role / Timing Role: Medium-current switching element operating at ≤10 kHz PWM frequency with defined turn-on/turn-off times.

Use Value: fT = 3 MHz and documented switching waveforms support clean edge transitions; 3 A rating covers stall current peaks.

Use Scenario: Back-to-back NPN configuration for redundant 48 V DC power supply OR-ing in telecom rectifier shelves.

IC Role / Device Role / Timing Role: Discrete power transistor implementing active diode function with controlled forward voltage drop.

Use Value: VCE(sat) ≤1.2 V provides lower conduction loss than Schottky diodes above 1 A, improving system efficiency by >2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD31CT4G Same silicon, identical electrical specs, but supplied in 2500-piece tape-and-reel (T4 suffix) instead of 1800-piece RLG format. No functional difference; selected when larger reel size aligns with SMT line changeover intervals or procurement batch sizing. Direct form-fit-function replacement; no layout or thermal redesign required.
TIP31C Through-hole TO-220 package; same 100 V/3 A rating but higher RθJA (65 °C/W vs. 80 °C/W for NJVMJD31CRLG at TA), no AEC-Q101 qualification. Suitable for prototyping or low-volume non-automotive designs where manual assembly or legacy footprint compatibility is prioritized. Not drop-in: requires PCB redesign, lacks automotive qualification, and has inferior thermal performance in surface-mount assemblies.

Compared with NJVMJD31CRLG, MJD31CT4G offers identical performance in a different reel size, while TIP31C provides legacy through-hole compatibility at the cost of thermal efficiency and automotive compliance-making NJVMJD31CRLG the preferred choice for new AEC-Q101-compliant SMT power designs.

Availability

NJVMJD31CRLG is available at Aetrix Electronics and suitable for automotive power regulation, industrial relay driving, and DC motor control applications requiring stable component supply across extended product lifecycles.

Supply support for NJVMJD31CRLG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

NJVMJD31CRLG belongs to the MJD31/MJD32 complementary power transistor family, designed specifically for robust, high-voltage, medium-current amplification and switching in automotive-qualified surface-mount power stages.

FAQ

What is the maximum collector-emitter voltage rating for NJVMJD31CRLG?

The NJVMJD31CRLG has a maximum collector-emitter sustaining voltage (VCEO(sus)) of 100 Vdc at IC = 30 mA and IB = 0. This rating is confirmed in the Maximum Ratings table and Electrical Characteristics section of the official onsemi datasheet (MJD31/D, Rev. 21). The device maintains this rating across its full operating temperature range and is validated for transient overvoltage events in automotive applications.

Is NJVMJD31CRLG qualified for automotive applications?

Yes, NJVMJD31CRLG carries the NJV prefix indicating it is AEC-Q101 qualified and PPAP capable. The datasheet explicitly states "NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable." This qualification covers temperature cycling, mechanical shock, and humidity testing per AEC-Q101 standards.

What package type and mounting style does NJVMJD31CRLG use?

NJVMJD31CRLG uses the DPAK (Case 369C) surface-mount package with four terminals: Base (Pin 1), Collector (Pins 2 and 4), and Emitter (Pin 3). The exposed collector tab (Pins 2 and 4) serves as both electrical connection and primary thermal path, requiring soldering to a large copper pour for effective heat dissipation.

What is the typical VCE(sat) of NJVMJD31CRLG under full-load conditions?

The typical collector-emitter saturation voltage (VCE(sat)) for NJVMJD31CRLG is ≤1.2 Vdc when IC = 3 Adc and IB = 375 mAdc, as specified in the Electrical Characteristics table. This value is measured at TC = 25 °C and reflects the device's low conduction loss in saturated switching mode, critical for efficiency in linear regulators and relay drivers.

How does NJVMJD31CRLG differ from the standard MJD31CRLG part number?

NJVMJD31CRLG differs from MJD31CRLG solely in manufacturing site control and traceability: the "NJV" prefix denotes production at an onsemi facility meeting unique automotive site requirements, including enhanced process controls and PPAP documentation readiness. Electrically and mechanically, NJVMJD31CRLG is identical to MJD31CRLG per the datasheet ordering information table.

NJVMJD31CRLG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Power - Max:
1.56 W
Frequency - Transition:
3MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

NJVMJD31CRLG FAQ

1.How can I place an order for NJVMJD31CRLG through Aetrix?

Please submit a Request for Quotation (RFQ) for NJVMJD31CRLG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NJVMJD31CRLG reliable?

The price and inventory of NJVMJD31CRLG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD31CRLG is usually 5 days.

3.What payment methods are accepted for NJVMJD31CRLG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD31CRLG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NJVMJD31CRLG?

NJVMJD31CRLG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NJVMJD31CRLG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NJVMJD31CRLG?

For technical support, including NJVMJD31CRLG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD31CRLG requirements.

6.How does Aetrix verify that NJVMJD31CRLG is sourced from the original manufacturer or authorized distributors?

All NJVMJD31CRLG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD31CRLG meets industry standards.

7.What is the process for return or replacement of NJVMJD31CRLG?

All NJVMJD31CRLG units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD31CRLG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NJVMJD31CRLG part is unused and in its original packaging.

Return procedure for NJVMJD31CRLG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NJVMJD31CRLG Tags

  • NJVMJD31CRLG
  • NJVMJD31CRLG PDF
  • NJVMJD31CRLG Datasheet
  • NJVMJD31CRLG Specifications
  • NJVMJD31CRLG Images
  • onsemi
  • onsemi NJVMJD31CRLG
  • Buy NJVMJD31CRLG
  • NJVMJD31CRLG Price
  • NJVMJD31CRLG Distributor
  • NJVMJD31CRLG Supplier
  • NJVMJD31CRLG Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER