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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NJVMJD32T4G

Name: NJVMJD32T4G
Brand: onsemi
SKU: NJVMJD32T4G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NJVMJD32T4G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NJVMJD32T4G.pdf

Description:: TRANS PNP 40V 3A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NJVMJD32T4G from onsemi is a PNP complementary power transistor in DPAK (Case 369C) package, rated for 40 V_CEO, 3 A continuous collector current, and 15 W total power dissipation at T_C = 25 °C. It operates across −65 to +150 °C junction temperature range and is AEC-Q101 qualified for automotive applications including motor driver stages and DC-DC converter output switches.

For engineers reviewing the NJVMJD32T4G datasheet, pinout, applications, or equivalent options, this part serves as a surface-mount, Pb-free, RoHS-compliant replacement for legacy TIP32-series PNP transistors in medium-power linear and switching circuits requiring stable gain (h_FE = 10–50 at I_C = 3 A), low V_CE(sat) ≤ 1.2 V, and thermal resistance R_θJC = 8.3 °C/W.

Technical Context

This PNP bipolar junction transistor uses silicon planar epitaxial construction with epoxy encapsulation meeting UL 94 V−0 flammability rating. Its complementary pairing with NJVMJD31T4G enables push-pull amplifier and H-bridge configurations without cross-conduction risk under matched bias conditions.

Designed for operation in the active and saturation regions, it supports DC amplification (f_T = 3 MHz) and low-speed switching (t_on/t_off characterized per Figure 3–4), with base-emitter "on" voltage ≤ 1.8 V and collector cutoff current ≤ 50 µA at V_CE = 40 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter voltage before breakdown in open-base condition; defines upper rail limit in low-voltage power stages.
I_C (continuous)	3.0 A - Sustained collector current capability with heatsink at T_C = 25 °C; supports 24 V/3 A load switching.
P_D @ T_C = 25 °C	15 W - Total power dissipation limit when mounted on minimum recommended copper pad (165 mm², 1 oz Cu); requires thermal design margin below derated value.
h_FE @ I_C = 3 A	10–50 - DC current gain range at full-rated current and V_CE = 4 V; enables predictable base drive sizing for saturation.
V_CE(sat) @ I_C = 3 A	≤ 1.2 V - Collector-emitter saturation voltage at I_C = 3 A and I_B = 375 mA; determines conduction loss and thermal rise in switch-mode operation.
R_θJC	8.3 °C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement when case temperature is controlled.
AEC-Q101 Qualified	Yes - Validated for automotive-grade reliability including temperature cycling, HTOL, and ESD (HBM Class 3B); supports PPAP documentation.

Pinout & Package

DPAK (Case 369C) surface-mount package measuring 6.10 × 6.54 × 2.28 mm with 2.29 mm lead pitch; features exposed drain pad (pin 2 & 4) for thermal and electrical connection to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on.
2	Collector	Main high-side current path; electrically tied to pin 4; connects to positive supply rail in common-emitter switch configuration.
3	Emitter	Reference terminal and current return path; typically connected to load or system ground; sets bias reference for base drive.
4	Collector	Second collector terminal for enhanced thermal and current handling; must be soldered to large copper area for R_θJC compliance.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood environments including thermal cycling (−40 to +150 °C), HTOL, and ESD robustness (HBM 3B).
DPAK tape-and-reel packaging	2,500-unit reel (T4 suffix) optimized for automated SMT placement; lead-formed for direct surface mounting without bending.
UL 94 V−0 epoxy	Flame-retardant encapsulation suitable for safety-critical industrial and automotive assemblies requiring certified material compliance.
Complementary pairing	Matched electrical specs with NJVMJD31T4G (NPN) enable symmetrical push-pull designs without gain or timing mismatch.
Pb-free and RoHS compliant	Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements for lead-free assembly.

Applications

Automotive Door Lock Actuator	Industrial 24 V DC Motor Driver
Use Scenario: Bidirectional control of solenoid-based door lock mechanisms using half-H-bridge topology. IC Role / Device Role / Timing Role: PNP high-side switch providing current sink path during reverse actuation phase; complements NPN low-side device. Use Value: V_CEO = 40 V withstands load dump transients up to 35 V; AEC-Q101 qualification ensures 15-year field reliability in vehicle body electronics.	Use Scenario: PWM-controlled speed regulation of brushed DC motors in factory automation conveyors. IC Role / Device Role / Timing Role: Medium-power switching element in discrete H-bridge output stage; handles 3 A stall current with <1.2 V saturation drop. Use Value: R_θJC = 8.3 °C/W enables compact heatsinking on 2-layer PCB; 15 W power rating supports intermittent 100% duty cycle bursts.
AC-DC Adapter Secondary-Side Switch	Programmable Power Supply Output Stage
Use Scenario: Linear pass element in regulated 12 V/2 A offline adapter output stage with overcurrent foldback. IC Role / Device Role / Timing Role: PNP series pass transistor operating in active region; base driven by error amplifier feedback loop. Use Value: h_FE ≥ 10 at I_C = 3 A ensures stable loop gain; V_BE(on) ≤ 1.8 V simplifies bias network design for ±1% output regulation.	Use Scenario: Adjustable current-limiting element in benchtop lab power supplies with remote sense capability. IC Role / Device Role / Timing Role: Precision current-sink transistor in constant-current mode; emitter connected to sense resistor, collector to load. Use Value: ICEO ≤ 50 µA minimizes leakage-induced offset error; −65 to +150 °C operating range supports wide ambient calibration stability.

Automotive Door Lock Actuator

Industrial 24 V DC Motor Driver

Use Scenario: Bidirectional control of solenoid-based door lock mechanisms using half-H-bridge topology.

IC Role / Device Role / Timing Role: PNP high-side switch providing current sink path during reverse actuation phase; complements NPN low-side device.

Use Value: V_CEO = 40 V withstands load dump transients up to 35 V; AEC-Q101 qualification ensures 15-year field reliability in vehicle body electronics.

Use Scenario: PWM-controlled speed regulation of brushed DC motors in factory automation conveyors.

IC Role / Device Role / Timing Role: Medium-power switching element in discrete H-bridge output stage; handles 3 A stall current with <1.2 V saturation drop.

Use Value: R_θJC = 8.3 °C/W enables compact heatsinking on 2-layer PCB; 15 W power rating supports intermittent 100% duty cycle bursts.

AC-DC Adapter Secondary-Side Switch

Programmable Power Supply Output Stage

Use Scenario: Linear pass element in regulated 12 V/2 A offline adapter output stage with overcurrent foldback.

IC Role / Device Role / Timing Role: PNP series pass transistor operating in active region; base driven by error amplifier feedback loop.

Use Value: h_FE ≥ 10 at I_C = 3 A ensures stable loop gain; V_BE(on) ≤ 1.8 V simplifies bias network design for ±1% output regulation.

Use Scenario: Adjustable current-limiting element in benchtop lab power supplies with remote sense capability.

IC Role / Device Role / Timing Role: Precision current-sink transistor in constant-current mode; emitter connected to sense resistor, collector to load.

Use Value: ICEO ≤ 50 µA minimizes leakage-induced offset error; −65 to +150 °C operating range supports wide ambient calibration stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD32T4G	No NJV prefix; not AEC-Q101 qualified or PPAP capable; identical electrical specs and DPAK package.	Suitable for commercial/industrial use only; lacks automotive traceability and stress-test validation.	Select when automotive qualification is unnecessary and cost sensitivity outweighs long-term supply assurance.
ON Semiconductor MJD32CT4G	Rated for V_CEO = 100 V (vs. 40 V); otherwise identical pinout, package, and gain characteristics.	Supports higher bus voltages (e.g., 48 V telecom systems); higher V_CEO increases safe operating area margin but reduces SOA at low V_CE.	Choose when system transient protection requires >60 V standoff or future-proofing against voltage upgrades is needed.

Compared with NJVMJD32T4G, MJD32T4G offers identical performance at lower qualification cost but no automotive support, while MJD32CT4G trades lower saturation efficiency for higher voltage tolerance-making NJVMJD32T4G optimal for cost-sensitive, thermally constrained 24–36 V automotive and industrial switching where AEC-Q101 compliance is mandatory.

Availability

NJVMJD32T4G is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drivers, and programmable power supply output stages requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for NJVMJD32T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

NJVMJD32T4G belongs to the MJD31/MJD32 complementary power transistor family, designed specifically for surface-mount, medium-power linear amplification and low-speed switching in automotive and industrial equipment where reliability, thermal performance, and qualification rigor are critical.

FAQ

What is the maximum continuous collector current rating for NJVMJD32T4G?

The NJVMJD32T4G is rated for 3.0 A continuous collector current (I_C) at case temperature T_C = 25 °C. This rating assumes proper thermal management via the exposed collector pad (pins 2 and 4) soldered to a minimum 165 mm² copper area. Derating applies above 25 °C at 0.12 W/°C, reducing usable current in high-temperature environments.

Is NJVMJD32T4G pin-compatible with the standard MJD32T4G?

Yes, NJVMJD32T4G shares identical DPAK (Case 369C) mechanical dimensions, pinout (base-collector-emitter-collector), and electrical specifications with MJD32T4G. The NJV prefix denotes additional automotive-specific process controls and AEC-Q101 qualification-but does not alter footprint or connectivity. No PCB layout changes are required for substitution.

What does the "T4" suffix indicate in NJVMJD32T4G?

The "T4" suffix in NJVMJD32T4G specifies tape-and-reel packaging containing 2,500 units per reel, with lead-formed terminals optimized for automated surface-mount assembly. This format complies with EIA-481 standards and supports high-throughput pick-and-place operations without manual lead forming or trimming.

Does NJVMJD32T4G support operation in the linear (active) region for amplifier applications?

Yes, NJVMJD32T4G is explicitly designed for both switching and linear amplifier use. Its DC current gain (h_FE) ranges from 10 to 50 at I_C = 3 A and V_CE = 4 V, and its f_T of 3 MHz supports audio-frequency amplification. Thermal resistance R_θJC = 8.3 °C/W enables stable bias point maintenance under continuous active-region dissipation.

How does the AEC-Q101 qualification impact NJVMJD32T4G's use in non-automotive designs?

AEC-Q101 qualification certifies NJVMJD32T4G for extended temperature operation (−65 to +150 °C), enhanced ESD robustness (HBM Class 3B), and accelerated lifetime testing-benefiting any mission-critical industrial or medical application. While not required outside automotive, it provides measurable reliability headroom and supply-chain confidence for long-lifecycle products.

NJVMJD32T4G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 1.2V @ 375mA, 3A

Current - Collector Cutoff (Max):: 50µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 10 @ 3A, 4V

Power - Max:: 1.56 W

Frequency - Transition:: 3MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

NJVMJD32T4G FAQ

1.How can I place an order for NJVMJD32T4G through Aetrix?

Please submit a Request for Quotation (RFQ) for NJVMJD32T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NJVMJD32T4G reliable?

The price and inventory of NJVMJD32T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD32T4G is usually 5 days.

3.What payment methods are accepted for NJVMJD32T4G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD32T4G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NJVMJD32T4G?

NJVMJD32T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NJVMJD32T4G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NJVMJD32T4G?

For technical support, including NJVMJD32T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD32T4G requirements.

6.How does Aetrix verify that NJVMJD32T4G is sourced from the original manufacturer or authorized distributors?

All NJVMJD32T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD32T4G meets industry standards.

7.What is the process for return or replacement of NJVMJD32T4G?

All NJVMJD32T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD32T4G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NJVMJD32T4G part is unused and in its original packaging.

Return procedure for NJVMJD32T4G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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