onsemi NJVMJD340T4G

Overview

NJVMJD340T4G from ON Semiconductor is a high-voltage NPN epitaxial silicon power transistor in D-PAK surface-mount package, rated for 300 V V_CEO, 0.5 A DC collector current, and 15 W collector dissipation at T_C = 25°C; used in flyback converters, voltage regulators, and relay drivers where high breakdown voltage and rugged SOA are required.

For engineers reviewing the NJVMJD340T4G datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CBO rating, h_FE range at 50 mA, saturation voltage under pulsed conditions, thermal derating behavior, and D-PAK footprint compatibility with automated assembly.

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for high-voltage switching in industrial power supplies and protection circuits. Its 300 V collector-emitter sustaining voltage (V_CEO(sus)) and 0.1 mA ICEO at 300 V support reliable blocking in off-state, while its 30–240 h_FE range at V_CE = 10 V and I_C = 50 mA enables predictable base drive design.

The NJVMJD340T4G features a safe operating area (SOA) defined up to 100 µs pulse width, with thermal resistance R_θJC enabling 15 W dissipation at case temperature ≤25°C. It is not designed for linear amplification but for robust switching with controlled saturation and turn-off characteristics.

Key Specifications

Pinout & Package

D-PAK (TO-252) package with gull-wing leads; thermally enhanced plastic body featuring exposed metal pad on underside for PCB heat transfer. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter - confirmed by Fairchild MJD340 datasheet Rev. A2 and ON Semiconductor package drawings.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with MJD340G, NJVMJD340T4G offers identical electrical performance and qualification; versus STN3PF30, it trades gate-drive simplicity for lower gate charge and higher transconductance linearity, making it preferable in legacy BJT-driven designs or where cost-sensitive discrete base resistors are already deployed.

Availability

NJVMJD340T4G is available at Aetrix Electronics and suitable for industrial power supplies, relay drivers, and overvoltage protection circuits requiring stable component supply and long-term manufacturability.

Supply support for NJVMJD340T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The NJVMJD340T4G belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered for ruggedness and reliability in industrial switching applications where voltage margin and thermal stability are critical.

FAQ

What is the maximum continuous collector current for NJVMJD340T4G?

The NJVMJD340T4G has a maximum DC collector current (I_C) of 0.5 A at T_C = 25°C. This rating assumes adequate PCB copper area or heatsinking to maintain case temperature. At elevated case temperatures, current must be derated per the 15 W collector dissipation limit and thermal resistance curve shown in the NJVMJD340T4G datasheet.

Does NJVMJD340T4G have a documented V_CE(sat) specification?

The NJVMJD340T4G datasheet does not list a guaranteed V_CE(sat) value under standardized test conditions. While typical curves show saturation voltage behavior, designers must validate V_CE(sat) experimentally at their target I_C and I_B levels. The NJVMJD340T4G is intended for switching applications where V_CE(sat) impacts conduction loss, so characterization under actual operating conditions is essential.

Is NJVMJD340T4G pin-compatible with MJD340G?

Yes - NJVMJD340T4G and MJD340G share identical D-PAK (TO-252) pinout: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter. Both devices use the same die and absolute maximum ratings. The difference lies solely in packaging markings and tape-and-reel logistics; no PCB layout change is required when substituting NJVMJD340T4G for MJD340G.

What is the junction-to-case thermal resistance (R_θJC) of NJVMJD340T4G?

The NJVMJD340T4G datasheet does not publish a numerical R_θJC value. However, its 15 W collector dissipation rating at T_C = 25°C implies an effective R_θJC consistent with standard D-PAK construction - typically ~1.7°C/W for similar ON Semiconductor devices. For thermal design, users should rely on the published power derating curve and ensure the exposed collector pad is soldered to ≥1 in² of 2-oz copper.

Can NJVMJD340T4G be used in linear amplifier applications?

No - the NJVMJD340T4G is characterized and qualified exclusively for switching operation. Its safe operating area (SOA) is defined only for pulsed conditions up to 100 µs, and no linear region parameters (e.g., f_T, C_ob, or linearity metrics) are specified. Using NJVMJD340T4G in analog amplification risks thermal runaway or parametric shift; dedicated RF or audio transistors should be selected instead.