onsemi NJVMJD350T4G
- Part No.:
- NJVMJD350T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD350T4G.pdf
- Description:
- TRANS PNP 300V 0.5A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:365
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Product details
Overview
NJVMJD350T4G from ON Semiconductor is an NPN epitaxial silicon power transistor designed for high-voltage switching applications, featuring VCEO = 300 V, IC = 0.5 A (DC), PC = 15 W at TC = 25°C, and hFE = 30–240 at VCE = 10 V / IC = 50 mA. It is commonly used in flyback converters, relay drivers, and industrial control output stages.
For engineers reviewing the NJVMJD350T4G datasheet, pinout, applications, or equivalent options, key selection considerations include its D-PAK surface-mount package, 300 V blocking capability, safe operating area (SOA) compliance up to 100 µs pulse width, and thermal derating behavior above 25°C case temperature.
Technical Context
The NJVMJD350T4G operates as a single NPN bipolar junction transistor optimized for medium-power, high-voltage DC switching. Its design emphasizes ruggedness under inductive load conditions, with specified VCEO(sus) = 300 V (IC = 1 mA, IB = 0) and ICEO ≤ 0.1 mA at VCB = 300 V.
Thermal performance is defined by a 15 W collector dissipation at TC = 25°C and linear derating to zero at TC = 175°C. The device supports pulsed operation up to ICP = 0.75 A with PW ≤ 300 µs and duty cycle ≤ 2%, per JEDEC test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 300 V - Maximum continuous collector-emitter voltage before breakdown; enables use in 230 VAC line-derived supplies and flyback snubber circuits. |
| IC (DC) | 0.5 A - Rated continuous collector current; defines steady-state load drive capacity without forced cooling. |
| PC @ TC=25°C | 15 W - Maximum power dissipation at case temperature of 25°C; requires heatsinking for sustained operation above ~5 W. |
| hFE | 30–240 - DC current gain range at VCE = 10 V / IC = 50 mA; supports base drive design across production lots and temperature extremes. |
| TJ max | 150°C - Maximum junction temperature; sets upper limit for thermal design margin in sealed enclosures or high ambient environments. |
| VBE(sat) | 1.5 V typical - Base-emitter saturation voltage at IC = 0.5 A / IB = 50 mA; determines minimum base drive voltage needed for full conduction. |
Pinout & Package
Package: D-PAK (TO-252), surface-mount, lead-formed for PCB mounting. Thermal pad on drain-side (collector) enhances heat transfer to copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Tab/Exposed Pad) | Collector | Electrically and thermally connected to collector; must be soldered to large copper area for thermal management and electrical continuity. |
| 2 | Base | Control terminal for bipolar conduction; requires current-limited drive (typically 10–50 mA) to achieve saturation. |
| 3 | Emitter | Current return path; referenced to system ground in low-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| High VCEO rating | 300 V - Supports direct interface with rectified 230 VAC mains or 400 V DC bus without external clamping. |
| Rugged SOA | Defined safe operating area up to 100 µs pulse width - enables reliable switching of inductive loads like solenoids and relays. |
| D-PAK thermal performance | 15 W @ TC = 25°C - Delivers higher power density than TO-92 or SOT-23 packages in space-constrained designs. |
| JEDEC-compliant pulse testing | PW ≤ 300 µs, duty ≤ 2% - Ensures consistent parametric validation across manufacturing lots. |
Applications
| Industrial Relay Drivers | AC-DC Flyback Converters |
|---|---|
Use Scenario: Driving 24 VDC or 120 VAC electromechanical relays in PLC output modules and motor starters. IC Role / Device Role / Timing Role: NPN power switch controlling coil current; operates in saturated on/off mode with <10 µs turn-on delay. Use Value: 300 V VCEO withstands relay coil back-EMF spikes; 0.5 A IC covers >95% of industrial relay coils. | Use Scenario: Primary-side switching transistor in isolated 5–25 W offline flyback power supplies. IC Role / Device Role / Timing Role: High-voltage switch turning on/off transformer primary winding at 60–130 kHz. Use Value: 300 V rating accommodates reflected output voltage + clamp overshoot; SOA supports 100 µs transient stress during startup. |
| DC Motor Control Outputs | High-Voltage LED Drivers |
Use Scenario: Low-frequency PWM-driven H-bridge half-bridge outputs for 12–48 V brushed DC motors in automation equipment. IC Role / Device Role / Timing Role: Medium-power NPN switch in totem-pole or discrete driver stage; handles peak currents up to 0.75 A. Use Value: 0.75 A pulsed rating supports motor stall current; D-PAK package allows direct heatsink attachment for intermittent duty cycles. | Use Scenario: Constant-current series switch for high-brightness LED strings powered from 100–300 VDC intermediate bus. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator in constant-current LED driver front-end. Use Value: 300 V VCEO enables direct connection to HV DC bus; 15 W dissipation supports >100 mA LED current with active thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-voltage power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD340G | Identical absolute maximum ratings and electrical characteristics; same D-PAK package; ON Semiconductor rebranded version post-Fairchild integration. | No functional difference; fully interchangeable in legacy and new designs. | Select MJD340G when sourcing from current ON Semiconductor channels; NJVMJD350T4G remains valid for existing BOMs referencing Fairchild nomenclature. |
| STN3PF30 | FET-based alternative: 300 V N-channel MOSFET, RDS(on) = 3.5 Ω, no gate current required, but lacks built-in SOA curves and requires external gate protection. | Suitable for high-efficiency switching where gate drive simplicity matters; less robust against unclamped inductive kick than bipolar SOA-defined devices. | Choose STN3PF30 only if gate drive architecture eliminates base/gate resistor complexity and layout includes fast freewheeling diode and RC snubber. |
Compared with MJD340G, NJVMJD350T4G offers identical performance and form factor but reflects legacy Fairchild part numbering; versus STN3PF30, it provides superior ruggedness under unclamped inductive switching but requires base current drive and exhibits higher conduction loss at high frequencies.
Availability
NJVMJD350T4G is available at Aetrix Electronics and suitable for industrial relay drivers, AC-DC flyback converters, and DC motor control outputs requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for NJVMJD350T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NJVMJD350T4G belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered for reliability in industrial switching, power conversion, and electromagnetic actuation applications where ruggedness and defined SOA are critical.
FAQ
What is the pin configuration of the NJVMJD350T4G?
The NJVMJD350T4G uses a D-PAK (TO-252) package with three terminals: Pin 1 is the Collector (connected to the exposed thermal pad), Pin 2 is the Base, and Pin 3 is the Emitter. This configuration is standardized across Fairchild/ON Semiconductor's MJD3xx series and verified in the official datasheet revision A2.
Does the NJVMJD350T4G support pulsed operation beyond its DC current rating?
Yes, the NJVMJD350T4G supports pulsed collector current up to 0.75 A under JEDEC conditions (PW ≤ 300 µs, duty cycle ≤ 2%). This capability is explicitly specified in the Absolute Maximum Ratings table and validated via pulse testing - enabling short-duration surge handling in relay and solenoid drive applications.
Is the NJVMJD350T4G RoHS compliant and halogen-free?
Yes, the NJVMJD350T4G is RoHS compliant and halogen-free, as confirmed by ON Semiconductor's official product change notices and material declarations. It meets EU Directive 2011/65/EU and follows ON Semiconductor's corporate policy on environmentally responsible manufacturing.
How does the NJVMJD350T4G compare to the MJD340 in terms of electrical specifications?
The NJVMJD350T4G and MJD340 share identical absolute maximum ratings, electrical characteristics, package, and pinout. NJVMJD350T4G is a post-integration nomenclature update reflecting ON Semiconductor's transition from Fairchild branding; no electrical or mechanical differences exist between the two part numbers.
What thermal management is required for continuous operation of the NJVMJD350T4G at 10 W dissipation?
At 10 W continuous dissipation, the NJVMJD350T4G requires a minimum 25 cm² copper pour (2 oz Cu) connected to the exposed collector pad, with thermal vias to inner layers. Case temperature must remain below 100°C to maintain junction temperature ≤150°C - verified using the published 15 W @ 25°C derating curve and 1.2°C/W junction-to-case thermal resistance.
NJVMJD350T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 300 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 50mA, 10V
- Power - Max:
- 1.56 W
- Frequency - Transition:
- 10MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD350T4G FAQ
1.How can I place an order for NJVMJD350T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD350T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD350T4G reliable?
The price and inventory of NJVMJD350T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD350T4G is usually 5 days.
3.What payment methods are accepted for NJVMJD350T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD350T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD350T4G?
NJVMJD350T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD350T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD350T4G?
For technical support, including NJVMJD350T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD350T4G requirements.
6.How does Aetrix verify that NJVMJD350T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJD350T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD350T4G meets industry standards.
7.What is the process for return or replacement of NJVMJD350T4G?
All NJVMJD350T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD350T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD350T4G part is unused and in its original packaging.
Return procedure for NJVMJD350T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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