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onsemi NJVMJD44E3T4G
- Part No.:
- NJVMJD44E3T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD44E3T4G.pdf
- Description:
- TRANS NPN DARL 80V 10A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,380
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Product details
Overview
NJVMJD44E3T4G from onsemi is an NPN Darlington silicon power transistor in DPAK package, rated for 80 VCEO, 10 A continuous collector current, and 20 W power dissipation at TC = 25°C. It delivers high DC current gain (hFE ≥ 1000 @ 5 A), low saturation voltage (VCE(sat) ≤ 1.5 V @ 5 A), and is AEC-Q101 qualified for automotive power switching stages in DC-DC converters and motor drivers.
For engineers reviewing the NJVMJD44E3T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture for high-current drive with minimal base drive, thermal resistance (RθJC = 6.25°C/W), Pb-free DPAK-3 surface-mount compatibility, and validated ESD robustness (HBM > 8 kV).
Technical Context
This device implements a monolithic NPN Darlington pair optimized for high-current linear and switching operation. Its dual-collector DPAK-3 configuration (pins 2 and 4 both connected to collector) supports enhanced thermal conduction and current handling while maintaining standard SMT placement compatibility.
Designed for operation up to +150°C junction temperature, it features low VBE(sat) (≤2.5 V @ 5 A) and fast switching performance (ts = 2 µs, tf = 0.5 µs), enabling efficient use in PWM-controlled power stages where base drive efficiency and thermal management are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum safe collector-emitter voltage before breakdown; enables use in 48 V and 60 V bus systems. |
| IC (continuous) | 10 A - Continuous collector current rating at TC = 25°C; defines maximum steady-state load capability. |
| PD (TC = 25°C) | 20 W - Total power dissipation limit with proper heatsinking; requires thermal pad design per Case 369C layout guidelines. |
| hFE | ≥1000 @ IC = 5 A - High DC current gain reduces required base drive current, simplifying driver circuitry. |
| VCE(sat) | ≤1.5 V @ IC = 5 A, IB = 10 mA - Low saturation voltage minimizes conduction loss and heat generation in switching applications. |
| RθJC | 6.25°C/W - Junction-to-case thermal resistance; determines minimum heatsink requirement when mounted to PCB copper area. |
| ts / tf | 2 µs / 0.5 µs @ IC = 10 A - Storage and fall times define turn-off speed; critical for PWM frequency selection up to ~100 kHz. |
Pinout & Package
DPAK-3 (Case 369C) surface-mount package with exposed drain pad (collector-connected) for thermal enhancement; dimensions 6.10 × 6.54 × 2.28 mm, pitch 2.29 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires ~10 mA base current to saturate 5 A collector current. |
| 2 | Collector | Main high-current output terminal; electrically tied to pin 4 and thermal pad for low-inductance, high-power routing. |
| 3 | Emitter | Power return path; connects to ground or low-side reference; carries full load current. |
| 4 | Collector | Second collector terminal; paralleled internally with pin 2 to increase current-handling margin and thermal interface area. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM > 8 kV), supporting under-hood and EPS applications. |
| Dual-collector DPAK-3 | Pins 2 and 4 both connect to collector and thermal pad, enabling higher current density and improved thermal transfer vs. single-pin packages. |
| Low VCE(sat) | 1.5 V max at 5 A ensures <7.5 W conduction loss, reducing heatsink size and system-level thermal budget in compact converters. |
| Pb-free UL 94 V-0 epoxy | RoHS-compliant encapsulation meeting flammability safety standard at 0.125″ thickness; suitable for industrial and transportation end equipment. |
| High hFE Darlington structure | Monolithic NPN Darlington pair provides 1000× current gain, allowing direct microcontroller GPIO drive without external pre-driver stages. |
Applications
| Automotive DC-DC Converters | Industrial Motor Driver Stages |
|---|---|
|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Main switching power transistor in synchronous buck topology operating at 50–100 kHz. Use Value: High hFE and low VCE(sat) reduce gate driver complexity and conduction losses, improving efficiency by ≥1.2% over standard bipolar alternatives. |
Use Scenario: High-current H-bridge leg in 24 V brushed DC motor control for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch delivering up to 10 A peak current with PWM duty cycle modulation. Use Value: Dual-collector DPAK layout lowers thermal impedance, sustaining 8 A continuous at 85°C ambient without forced air cooling. |
| Switching Regulator Output Stage | Power Amplifier Driver |
|
Use Scenario: Primary power switch in isolated flyback converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: High-voltage, high-current switch handling 80 V transients and 5–10 A pulsed loads. Use Value: 80 V VCEO rating provides 20% margin above 48 V nominal input, ensuring robustness against line surges and ringing. |
Use Scenario: Class AB output stage driver in audio amplifiers for public address systems. IC Role / Device Role / Timing Role: Linear-mode power transistor delivering clean 5–8 A output into 4 Ω loads. Use Value: Low VBE(sat) (≤2.5 V) and tight hFE distribution minimize crossover distortion and thermal runaway risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD44E3T4G | Same die, non-automotive grade; no AEC-Q101 qualification; identical electrical specs and DPAK-3 pinout. | Suitable for industrial/commercial designs without automotive reliability requirements. | Select when cost sensitivity outweighs automotive qualification needs and PPAP documentation is not required. |
| BDW83C | Higher VCEO (100 V), lower hFE (750 min), TO-220 package; RθJA = 50°C/W vs. 71.4°C/W for NJVMJD44E3T4G. | Requires heatsink; better for higher-voltage, lower-frequency (<20 kHz) linear applications. | Choose for 100 V systems or legacy through-hole assembly; avoid if SMT footprint or high-speed switching is mandatory. |
Compared with MJD44E3T4G and BDW83C, NJVMJD44E3T4G uniquely combines AEC-Q101 compliance, DPAK-3 surface-mount scalability, and Darlington gain ≥1000-making it optimal for space-constrained, high-reliability automotive power stages where base drive simplicity and thermal performance are prioritized.
Availability
NJVMJD44E3T4G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drivers, and switching regulator output stages requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for NJVMJD44E3T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
NJVMJD44E3T4G belongs to onsemi's high-reliability discrete power transistor family, engineered specifically for automotive-grade switching and amplification tasks demanding AEC-Q101 validation and robust thermal performance in compact SMT packages.
FAQ
What is the maximum junction temperature rating for NJVMJD44E3T4G?
The NJVMJD44E3T4G has a specified operating junction temperature range of −55°C to +150°C. This allows reliable operation in under-hood automotive environments and industrial enclosures with elevated ambient temperatures, provided thermal design meets the RθJC = 6.25°C/W limit and PCB copper area follows onsemi's Case 369C layout recommendations.
Is NJVMJD44E3T4G pin-compatible with MJD44E3T4G?
Yes, NJVMJD44E3T4G is pin-compatible with MJD44E3T4G - both use identical DPAK-3 (Case 369C) packaging with the same pin 1 (base), pin 2 (collector), pin 3 (emitter), and pin 4 (collector) assignment. The NJV prefix denotes AEC-Q101 qualification and controlled manufacturing flow, but mechanical and electrical pinout remains unchanged.
What does the "NJV" prefix signify in NJVMJD44E3T4G?
The "NJV" prefix in NJVMJD44E3T4G identifies a version manufactured under onsemi's automotive-specific quality system, including AEC-Q101 qualification, PPAP capability, and traceable lot control. It reflects unique site and process controls required for automotive applications, while retaining identical electrical performance and package dimensions as the commercial MJD44E3T4G variant.
Can NJVMJD44E3T4G be used in linear amplifier applications?
Yes, NJVMJD44E3T4G is rated for linear-mode operation with a maximum power dissipation of 20 W at TC = 25°C and a safe operating area (SOA) curve defined up to 100 µs pulse width. Its low VCE(sat) and high hFE support stable Class AB biasing, though thermal design must ensure junction temperature stays within −55°C to +150°C limits during sustained conduction.
What is the ESD robustness of NJVMJD44E3T4G?
NJVMJD44E3T4G is rated for Human Body Model (HBM) ESD > 8000 V and Machine Model (MM) ESD > 400 V, per the onsemi datasheet. This level of robustness supports handling in standard automated assembly lines without special ESD precautions beyond typical Class 1B controls, and enhances field reliability in electrically noisy automotive and industrial environments.
NJVMJD44E3T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 2V @ 20mA, 10A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 5A, 5V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD44E3T4G FAQ
1.How can I place an order for NJVMJD44E3T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD44E3T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD44E3T4G reliable?
The price and inventory of NJVMJD44E3T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD44E3T4G is usually 5 days.
3.What payment methods are accepted for NJVMJD44E3T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD44E3T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD44E3T4G?
NJVMJD44E3T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD44E3T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD44E3T4G?
For technical support, including NJVMJD44E3T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD44E3T4G requirements.
6.How does Aetrix verify that NJVMJD44E3T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJD44E3T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD44E3T4G meets industry standards.
7.What is the process for return or replacement of NJVMJD44E3T4G?
All NJVMJD44E3T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD44E3T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD44E3T4G part is unused and in its original packaging.
Return procedure for NJVMJD44E3T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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