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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NJVMJD44H11D3T4G

Name: NJVMJD44H11D3T4G
Brand: onsemi
SKU: NJVMJD44H11D3T4G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NJVMJD44H11D3T4G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: NJVMJD44H11D3T4G.pdf

Description:: TRANS NPN 80V 8A DPAK

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Product details

Overview

NJVMJD44H11D3T4G from onsemi is an AEC-Q101-qualified NPN silicon power transistor in DPAK−3 (Case 369G) surface-mount package, rated for 80 V_CEO, 8 A continuous collector current, and 20 W total power dissipation at T_C = 25 °C. It delivers low 1 V_CE(sat) at I_C = 8 A / I_B = 0.4 A and fast switching with t_d + t_r = 300 ns, targeting high-efficiency switching regulators and motor driver output stages.

For engineers reviewing the NJVMJD44H11D3T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its automotive-grade qualification, DPAK−3 thermal performance (R_JC = 6.25 °C/W), complementary pairing with NJVMJD45H11D3T4G, and suitability for space-constrained 8 A switching loads requiring robust SOA and Pb-free compliance.

Technical Context

This NPN bipolar junction transistor operates in linear or saturated switching modes with V_CEO = 80 V, I_C = 8 A, and f_T = 85 MHz. Its safe operating area (SOA) supports pulse operation up to 100 V and 7 A at 1 ms, constrained by second breakdown and thermal limits.

The device uses a planar epitaxial structure with epoxy meeting UL 94 V-0 at 0.125 in thickness. Its base-emitter saturation voltage is 1.5 V at I_C = 8 A / I_B = 0.8 A, and it exhibits C_cb = 45 pF at V_CB = 10 V, enabling stable high-frequency switching in DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum collector-emitter blocking voltage before breakdown; defines maximum supply rail compatibility in switching applications.
I_C (continuous)	8 A - Continuous DC collector current capability; sets upper limit for steady-state load drive without forced cooling.
P_D @ T_C = 25 °C	20 W - Total power dissipation at case temperature 25 °C; requires heatsink design supporting R_JC ≤ 6.25 °C/W for full rating.
V_CE(sat)	1 V - Collector-emitter saturation voltage at I_C = 8 A / I_B = 0.4 A; determines conduction loss and heat generation in on-state operation.
f_T	85 MHz - Current-gain-bandwidth product at I_C = 0.5 A / V_CE = 10 V; indicates usable frequency range for small-signal amplification or high-speed switching.
R_JC	6.25 °C/W - Junction-to-case thermal resistance; enables direct heatsink interface design for thermal management in surface-mount layouts.
AEC-Q101	Qualified - Validated for automotive underhood applications per stress test requirements; supports PPAP documentation for OEM programs.

Pinout & Package

DPAK−3 surface-mount package (Case 369G), 6.10 × 6.54 × 2.28 mm, with 4-terminal configuration optimized for thermal and electrical performance in power switching layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires ≥0.4 A base drive for full 8 A collector conduction; low-impedance path for switching signal injection.
2	Collector	Main high-current output node; electrically tied to pin 4; designed for PCB copper pour connection to manage 20 W thermal load.
3	Emitter	Reference/return path for collector current; low-inductance connection critical for minimizing switching overshoot in high-dI/dt applications.
4	Collector	Second collector terminal; paralleled with pin 2 to reduce package inductance and improve current sharing in high-frequency switching.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood use including temperature cycling, HTRB, and ESD testing; supports PPAP submission for Tier 1 programs.
Low V_CE(sat)	1 V at 8 A ensures <1.6 W conduction loss per device, reducing thermal burden in compact multi-phase or dual-output converter designs.
Complementary PNP pairing	Direct match with NJVMJD45H11D3T4G enables balanced push-pull or H-bridge topologies without gate-drive asymmetry compensation.
UL 94 V-0 epoxy	Flame-retardant encapsulation meets safety standards for industrial and automotive equipment requiring non-propagating combustion behavior.
Pb-free, RoHS-compliant	Meets global environmental regulations; compatible with lead-free reflow profiles up to 260 °C peak soldering temperature.

Applications

Switching Regulator Output Stage	DC Motor Driver Half-Bridge
Use Scenario: High-efficiency 48 V input buck converter delivering 5–12 V at up to 8 A to embedded control modules. IC Role / Device Role / Timing Role: Main NPN switch in synchronous rectifier or complementary pair configuration; handles high dI/dt transitions at 100–500 kHz. Use Value: Low 1 V_CE(sat) minimizes conduction loss while 85 MHz f_T supports clean turn-off edge control, improving overall efficiency above 92%.	Use Scenario: Bidirectional 24 V brushed DC motor control in automotive HVAC actuators or seat positioners. IC Role / Device Role / Timing Role: High-side NPN switch in half-bridge topology; paired with NJVMJD45H11D3T4G as low-side complement. Use Value: AEC-Q101 qualification ensures reliability across −40 to +125 °C ambient; DPAK−3 footprint allows compact dual-transistor layout with shared thermal pad.
Power Amplifier Driver	Industrial AC/DC Converter Primary Switch
Use Scenario: Class AB audio output stage driving 4 Ω loads up to 10 W in automotive infotainment head units. IC Role / Device Role / Timing Role: Linear-mode output transistor biased into active region; handles analog signal swing with minimal crossover distortion. Use Value: h_FE ≥ 60 at 2 A enables stable bias network design; SOA curve supports safe 100 V/3 A transient peaks during clipping events.	Use Scenario: 100 W offline flyback converter primary-side switch in industrial PLC power supplies. IC Role / Device Role / Timing Role: Fast-switching NPN transistor replacing MOSFETs in cost-sensitive designs where gate drive simplicity is prioritized. Use Value: 300 ns t_d+t_r and 140 ns t_f enable efficient 65 kHz operation; 80 V rating accommodates reflected flyback spikes with margin.

Switching Regulator Output Stage

DC Motor Driver Half-Bridge

Use Scenario: High-efficiency 48 V input buck converter delivering 5–12 V at up to 8 A to embedded control modules.

IC Role / Device Role / Timing Role: Main NPN switch in synchronous rectifier or complementary pair configuration; handles high dI/dt transitions at 100–500 kHz.

Use Value: Low 1 V_CE(sat) minimizes conduction loss while 85 MHz f_T supports clean turn-off edge control, improving overall efficiency above 92%.

Use Scenario: Bidirectional 24 V brushed DC motor control in automotive HVAC actuators or seat positioners.

IC Role / Device Role / Timing Role: High-side NPN switch in half-bridge topology; paired with NJVMJD45H11D3T4G as low-side complement.

Use Value: AEC-Q101 qualification ensures reliability across −40 to +125 °C ambient; DPAK−3 footprint allows compact dual-transistor layout with shared thermal pad.

Power Amplifier Driver

Industrial AC/DC Converter Primary Switch

Use Scenario: Class AB audio output stage driving 4 Ω loads up to 10 W in automotive infotainment head units.

IC Role / Device Role / Timing Role: Linear-mode output transistor biased into active region; handles analog signal swing with minimal crossover distortion.

Use Value: h_FE ≥ 60 at 2 A enables stable bias network design; SOA curve supports safe 100 V/3 A transient peaks during clipping events.

Use Scenario: 100 W offline flyback converter primary-side switch in industrial PLC power supplies.

IC Role / Device Role / Timing Role: Fast-switching NPN transistor replacing MOSFETs in cost-sensitive designs where gate drive simplicity is prioritized.

Use Value: 300 ns t_d+t_r and 140 ns t_f enable efficient 65 kHz operation; 80 V rating accommodates reflected flyback spikes with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD44H11T4G	Same die, identical electrical specs, but lacks NJV prefix and AEC-Q101 qualification; packaged in Case 369C (not 369G).	Not qualified for automotive use; suitable only for industrial/commercial applications with less stringent reliability requirements.	Select when AEC-Q101 is unnecessary and cost sensitivity outweighs qualification needs.
BD249C	Lower V_CEO (60 V), lower I_C (6 A), higher V_CE(sat) (1.2 V), no AEC-Q101; TO-126 package with higher R_JA.	Limited to ≤48 V systems; unsuitable for high-temperature automotive environments or high-current motor drives.	Choose only for legacy board replacements or low-cost consumer applications where thermal and voltage margins are relaxed.

Compared with MJD44H11T4G and BD249C, NJVMJD44H11D3T4G provides automotive-grade reliability, superior thermal performance via Case 369G, and guaranteed 80 V/8 A capability-making it the sole option for new AEC-Q101-compliant designs requiring full-rated power in DPAK form factor.

Availability

NJVMJD44H11D3T4G is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and high-reliability DC-DC regulator applications requiring stable component supply and long-term lifecycle support.

Supply support for NJVMJD44H11D3T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

NJVMJD44H11D3T4G belongs to onsemi's complementary power transistor family designed specifically for rugged, high-current switching in automotive and industrial power systems requiring AEC-Q101 validation and surface-mount thermal efficiency.

FAQ

What is the maximum junction temperature rating for NJVMJD44H11D3T4G?

The NJVMJD44H11D3T4G has an operating junction temperature range of −55 °C to +150 °C, as specified in the Absolute Maximum Ratings table. This wide range supports deployment in under-hood automotive environments and high-ambient industrial settings, provided thermal design maintains T_J ≤ 150 °C under worst-case power dissipation.

Is NJVMJD44H11D3T4G pin-compatible with MJD44H11T4G?

Yes, NJVMJD44H11D3T4G is pin-compatible with MJD44H11T4G - both use DPAK−3 (4-pin) configuration with identical pin 1 (Base), pin 2 (Collector), pin 3 (Emitter), and pin 4 (Collector). However, NJVMJD44H11D3T4G uses Case 369G while MJD44H11T4G uses Case 369C; mechanical footprint differences require verification against land pattern tolerances.

Does NJVMJD44H11D3T4G support complementary operation with a PNP device?

Yes, NJVMJD44H11D3T4G is explicitly designed as the NPN complement to NJVMJD45H11D3T4G. Both share matched V_CEO, I_C, V_CE(sat), and switching characteristics, enabling symmetrical push-pull, H-bridge, and Class B amplifier designs without gain or timing mismatch.

What is the thermal resistance from junction to ambient (R_JA) for NJVMJD44H11D3T4G?

The NJVMJD44H11D3T4G has R_JA = 71.4 °C/W when surface-mounted on the minimum recommended PCB pad sizes. This value assumes standard JEDEC test conditions; actual R_JA improves significantly with copper pour, thermal vias, and heatsink integration - making it suitable for thermally dense power modules.

Can NJVMJD44H11D3T4G be used in linear amplifier applications?

Yes, NJVMJD44H11D3T4G supports linear operation with h_FE ≥ 60 at I_C = 2 A and V_CE = 1 V, and its SOA curve permits safe DC operation up to 8 A/1 V or pulsed operation up to 7 A/100 V. It is commonly deployed in Class AB audio drivers and precision current sources where gain stability and thermal robustness are critical.

NJVMJD44H11D3T4G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 400mA, 8A

Current - Collector Cutoff (Max):: 1µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 4A, 1V

Power - Max:: 20 W

Frequency - Transition:: 85MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

NJVMJD44H11D3T4G FAQ

1.How can I place an order for NJVMJD44H11D3T4G through Aetrix?

Please submit a Request for Quotation (RFQ) for NJVMJD44H11D3T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NJVMJD44H11D3T4G reliable?

The price and inventory of NJVMJD44H11D3T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD44H11D3T4G is usually 5 days.

3.What payment methods are accepted for NJVMJD44H11D3T4G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD44H11D3T4G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NJVMJD44H11D3T4G?

NJVMJD44H11D3T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NJVMJD44H11D3T4G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NJVMJD44H11D3T4G?

For technical support, including NJVMJD44H11D3T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD44H11D3T4G requirements.

6.How does Aetrix verify that NJVMJD44H11D3T4G is sourced from the original manufacturer or authorized distributors?

All NJVMJD44H11D3T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD44H11D3T4G meets industry standards.

7.What is the process for return or replacement of NJVMJD44H11D3T4G?

All NJVMJD44H11D3T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD44H11D3T4G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NJVMJD44H11D3T4G part is unused and in its original packaging.

Return procedure for NJVMJD44H11D3T4G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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