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onsemi NJVMJD45H11D3T4G
- Part No.:
- NJVMJD45H11D3T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD45H11D3T4G.pdf
- Description:
- TRANS PNP 80V 8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,477
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Product details
Overview
NJVMJD45H11D3T4G from onsemi is a PNP complementary power transistor in DPAK−3 (Case 369G) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W total power dissipation at TC = 25 °C. It delivers low VCE(sat) of ≤1 V at IC = 8 A/IB = 0.4 A and fast switching with tf = 100 ns, targeting high-efficiency output stages in automotive DC-DC converters and industrial motor drivers.
For engineers reviewing the NJVMJD45H11D3T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, 150 °C maximum junction temperature, RJC = 6.25 °C/W thermal resistance, and verified performance in complementary push-pull configurations with MJD44H11 series devices.
Technical Context
This PNP silicon power transistor operates as a high-current switching or linear amplification device in complementary pairs, supporting DC-DC converter topologies requiring robust safe operating area (SOA) up to 150 °C junction temperature. Its design emphasizes low saturation voltage and fast turn-off (tf = 100 ns), enabling efficient operation in hard-switched applications.
The device features electrically similar characteristics to legacy D45H series transistors while meeting modern automotive reliability standards: AEC-Q101 qualified, Pb-free/RoHS compliant, UL 94 V-0 epoxy, and PPAP-capable manufacturing. Thermal performance is defined for surface-mount mounting on minimum recommended pad sizes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 Vdc - Maximum blocking voltage before breakdown in common-emitter configuration; defines usable input/output voltage range in switching regulators. |
| IC (continuous) | 8 Adc - Sustained load current capability at TC = 25 °C; supports motor driver H-bridge legs and SMPS output stages without forced cooling. |
| VCE(sat) | ≤1 Vdc at IC = 8 A, IB = 0.4 A - Low conduction loss reduces heat generation and improves efficiency in saturated-switching applications. |
| fT | 90 MHz - Current-gain-bandwidth product indicating usable frequency limit for small-signal amplification or high-speed switching control loops. |
| RJC | 6.25 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for high-power dissipation up to 20 W with minimal ΔT. |
| TJ(max) | +150 °C - Maximum junction temperature rating; ensures operational reliability in under-hood automotive environments and industrial enclosures. |
| hFE | 40 min at IC = 4 A, VCE = 1 V - Confirmed DC current gain sufficient for base drive simplification in fixed-gain driver circuits. |
Pinout & Package
DPAK−3 surface-mount package (Case 369G), dimensions 6.10 × 6.54 × 2.28 mm, with 4-terminal configuration optimized for thermal and electrical performance in high-current PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; requires ≥0.4 A base drive for full saturation at 8 A collector current. |
| 2 | Collector | Main current sink node; electrically tied to pin 4 for enhanced current-handling capacity and thermal path symmetry. |
| 3 | Emiter | Reference and current source terminal; connected to system ground or positive rail depending on circuit topology (e.g., high-side switch). |
| 4 | Collector | Secondary collector connection; paralleled with pin 2 to reduce bond wire inductance and improve high-frequency switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and ESD (HBM Class 3B), enabling use in engine control and ADAS power stages. |
| Low VCE(sat) | ≤1 V at rated 8 A load - minimizes I²R conduction losses and eliminates need for oversized heatsinks in space-constrained designs. |
| Fast fall time | tf = 100 ns - reduces switching transition losses and EMI generation in PWM-driven applications above 20 kHz. |
| Complementary pairing | Matched with MJD44H11 (NPN) for symmetrical push-pull and H-bridge outputs - simplifies gate/base drive design and improves waveform fidelity. |
| Pb-free / RoHS | Halogen-free/BFR-free construction with "G" suffix - meets global environmental compliance requirements for automotive and industrial OEMs. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drivers |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in electric vehicles. IC Role / Device Role / Timing Role: PNP high-side switch in synchronous buck converter output stage, paired with NPN counterpart. Use Value: 80 V VCEO rating accommodates load-dump transients; 150 °C TJ(max) ensures stable operation near powertrain electronics. |
Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for factory automation actuators. IC Role / Device Role / Timing Role: Complementary PNP switch providing bidirectional current control with matched timing to NPN partner. Use Value: 100 ns fall time enables clean commutation at 20 kHz PWM frequency; low VCE(sat) reduces thermal stress during stall conditions. |
| Switching Regulator Output Stages | Power Amplifier Driver Circuits |
Use Scenario: Output transistor in isolated flyback converter delivering 5–12 V at 5 A for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side switching element handling peak currents up to 16 A (ICM) during transient loads. Use Value: 20 W PD rating at TC = 25 °C allows direct PCB copper pour heatsinking; RJC = 6.25 °C/W supports predictable thermal design. |
Use Scenario: Class AB emitter-follower driver stage in audio amplifier front-end for speaker protection circuits. IC Role / Device Role / Timing Role: Linear-mode current booster delivering low-impedance drive to downstream MOSFET gates or speaker coils. Use Value: hFE ≥40 at 4 A ensures stable bias control; SOA curves validated to 150 °C enable sustained operation during clipping events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD45H11T4G | Same die, identical electrical specs, but lacks NJV prefix and AEC-Q101/PPAP documentation; uses Case 369C instead of 369G. | Not qualified for automotive production; suitable only for industrial prototypes or non-safety-critical systems. | Select when AEC-Q101 compliance is not required and cost sensitivity outweighs traceability needs. |
| STP16PF06 | PNP MOSFET (not bipolar); 60 V VDS, 16 A ID, logic-level gate; no base current requirement but higher RDS(on) than VCE(sat). | Replaces bipolar function with voltage-controlled switching; requires gate driver redesign and lacks inherent SOA robustness at high VCE. | Choose only if system already uses MOSFET-based gate drivers and thermal margin exists for higher conduction loss. |
Compared with NJVMJD45H11D3T4G, MJD45H11T4G offers identical performance but no automotive qualification or site-specific control, while STP16PF06 shifts architecture to MOSFET operation-introducing gate drive complexity but eliminating base current demands and offering faster intrinsic switching.
Availability
NJVMJD45H11D3T4G is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and switching regulator output stages requiring stable component supply despite end-of-life status.
Supply support for NJVMJD45H11D3T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
NJVMJD45H11D3T4G belongs to the MJD45H11 complementary power transistor family, designed specifically for ruggedized, high-reliability switching and amplification in automotive and industrial power electronics where AEC-Q101 compliance and thermal robustness are mandatory.
FAQ
Is NJVMJD45H11D3T4G still in active production?
No - NJVMJD45H11D3T4G is officially marked as discontinued per onsemi's December 2025 datasheet revision. However, Aetrix Electronics maintains limited legacy inventory and supports last-time-buy programs with full traceability and documentation for NJVMJD45H11D3T4G.
What does the "NJV" prefix indicate for NJVMJD45H11D3T4G?
The "NJV" prefix on NJVMJD45H11D3T4G denotes automotive-grade manufacturing with unique site and process control requirements, including AEC-Q101 qualification, PPAP capability, and enhanced change control protocols required by Tier 1 automotive suppliers.
Can NJVMJD45H11D3T4G be used as a direct replacement for MJD45H11T4G?
NJVMJD45H11D3T4G shares identical electrical specifications and DPAK packaging with MJD45H11T4G but uses Case 369G instead of 369C and carries full AEC-Q101/PPAP documentation. Mechanical fit is confirmed, though layout verification for thermal pad alignment is recommended before drop-in use.
What is the maximum safe operating area (SOA) limit for NJVMJD45H11D3T4G at 100 °C case temperature?
At TC = 100 °C, NJVMJD45H11D3T4G's SOA is constrained by thermal limits rather than second breakdown. Derating from 20 W at 25 °C yields ~7.5 W maximum continuous dissipation, consistent with the 0.16 W/°C derating curve shown in Figure 3 of the datasheet for NJVMJD45H11D3T4G.
Does NJVMJD45H11D3T4G require a heatsink in typical 8 A switching applications?
Yes - NJVMJD45H11D3T4G requires a heatsink or substantial PCB copper pour due to its 6.25 °C/W RJC. At 8 A and 1 V VCE(sat), conduction loss is 8 W; with ambient at 70 °C and target TJ ≤125 °C, a thermal solution ≤6.9 °C/W (including RJA) is necessary - confirming active or enhanced passive cooling for NJVMJD45H11D3T4G.
NJVMJD45H11D3T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 20 W
- Frequency - Transition:
- 90MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD45H11D3T4G FAQ
1.How can I place an order for NJVMJD45H11D3T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD45H11D3T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD45H11D3T4G reliable?
The price and inventory of NJVMJD45H11D3T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD45H11D3T4G is usually 5 days.
3.What payment methods are accepted for NJVMJD45H11D3T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD45H11D3T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD45H11D3T4G?
NJVMJD45H11D3T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD45H11D3T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD45H11D3T4G?
For technical support, including NJVMJD45H11D3T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD45H11D3T4G requirements.
6.How does Aetrix verify that NJVMJD45H11D3T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJD45H11D3T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD45H11D3T4G meets industry standards.
7.What is the process for return or replacement of NJVMJD45H11D3T4G?
All NJVMJD45H11D3T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD45H11D3T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD45H11D3T4G part is unused and in its original packaging.
Return procedure for NJVMJD45H11D3T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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