onsemi NJVMJD45H11RLG

Overview

NJVMJD45H11RLG from onsemi is a PNP complementary power transistor in DPAK (TO-252) package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low VCE(sat) of ≤1 V at IC = 8 A/IB = 0.4 A and fast switching with tf = 100 ns, designed for output/driver stages in switching regulators, DC-DC converters, and linear power amplifiers.

For engineers reviewing the NJVMJD45H11RLG datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, Pb-free RoHS-compliant DPAK-3 package, complementary pairing with NJVMJD44H11RLG, and thermal resistance RJC = 6.25 °C/W for high-reliability automotive and industrial power switching designs.

Technical Context

This PNP bipolar junction transistor uses epitaxial base construction to achieve high hFE (min 40 at IC = 4 A), low saturation voltage, and stable gain across temperature (−55 °C to +150 °C). Its safe operating area (SOA) is defined up to 150 °C junction temperature with second-breakdown limits validated for pulse duty cycles ≤10%.

The device features fast turn-off characteristics (ts = 500 ns, tf = 100 ns) and optimized charge storage for efficient hard-switching in PWM-driven power stages. Its Ccb = 130 pF at VCB = 10 V enables predictable gate drive interaction in complementary push-pull configurations.

Key Specifications

Pinout & Package

DPAK-3 (Case 369C) surface-mount package: 6.10 mm × 6.54 mm × 2.28 mm body with exposed drain pad (Pin 2 & 4) for thermal and electrical connection. Lead-free (Pb-free) and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD45H11RLG, NJVMJD45H11RLG adds automotive-grade process controls and qualification without sacrificing performance; versus STGD45H11K4, it offers lower conduction loss and simpler base-drive design but requires more careful SOA management in transient conditions.

Availability

NJVMJD45H11RLG is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and telecom switching regulator applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for NJVMJD45H11RLG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

NJVMJD45H11RLG belongs to the MJD44H11/MJD45H11 complementary power transistor family, engineered for high-current switching and amplification in space-constrained surface-mount power stages.

FAQ

What is the maximum junction temperature rating for NJVMJD45H11RLG?

The NJVMJD45H11RLG has an operating junction temperature range of −55 °C to +150 °C, as specified in the Absolute Maximum Ratings table. This 150 °C upper limit enables reliable operation in under-hood automotive environments and sealed industrial enclosures when mounted with appropriate thermal interface to a heatsink or copper pour. The device's SOA curves are validated up to this temperature.

Is NJVMJD45H11RLG pin-compatible with NJVMJD44H11RLG?

Yes, NJVMJD45H11RLG is pin-compatible with NJVMJD44H11RLG - both use identical DPAK-3 (Case 369C) packaging with Pin 1 = Base, Pin 2 & 4 = Collector, Pin 3 = Emitter. This complementary pairing allows symmetrical PCB layout for push-pull or H-bridge topologies without redesign, though polarity reversal must be observed in schematic capture and routing.

Does NJVMJD45H11RLG require a heatsink in typical applications?

NJVMJD45H11RLG can operate without an external heatsink at ≤1.75 W total power dissipation (PD @ TA = 25 °C), but most 8 A switching applications exceed this. At full 8 A/80 V operation, thermal design must account for RJA = 71.4 °C/W - meaning even modest power levels require either a copper pour ≥250 mm² or a heatsink. The exposed collector pad (Pins 2 & 4) must be soldered to thermal land for effective heat transfer.

What does the "NJV" prefix signify in NJVMJD45H11RLG?

The "NJV" prefix in NJVMJD45H11RLG indicates automotive-grade manufacturing with unique site and control change requirements, including AEC-Q101 qualification, PPAP capability, and enhanced traceability (lot-level documentation, controlled wafer lots, and dedicated test flow). It distinguishes this variant from standard MJD45H11RLG for use in safety-critical or regulated automotive production programs.

Can NJVMJD45H11RLG be used in linear amplifier applications?

Yes, NJVMJD45H11RLG is suitable for linear amplifier output stages due to its high hFE (min 40 at IC = 4 A), low VCE(sat), and stable gain across temperature. Its SOA curve supports continuous DC operation up to 8 A/80 V with proper heatsinking, and the 150 °C max TJ rating accommodates sustained thermal stress. However, second-breakdown limits must be strictly observed in Class AB designs with reactive loads.