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onsemi NJVMJD45H11T4G
- Part No.:
- NJVMJD45H11T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD45H11T4G.pdf
- Description:
- TRANS PNP 80V 8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,458
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Product details
Overview
NJVMJD45H11T4G from onsemi is a PNP complementary power transistor in DPAK (TO-252) surface-mount package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low VCE(sat) of ≤1 V at IC = 8 A/IB = 0.4 A and fast switching with td + tr = 135 ns, suited for output/driver stages in switching regulators and DC-DC converters.
For engineers reviewing the NJVMJD45H11T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, thermal resistance RJC = 6.25 °C/W, complementary pairing with NJVMJD44H11T4G, and Pb-free, RoHS-compliant DPAK-3 packaging for automotive and industrial power switching.
Technical Context
This PNP bipolar junction transistor operates in linear and saturated switching modes, with hFE ≥40 at IC = 4 A and VCE = 1 V. Its safe operating area (SOA) is defined up to 150 °C junction temperature, constrained by both thermal limits and second breakdown under pulsed conditions.
The device features low saturation voltage and high gain-bandwidth product (fT = 90 MHz), enabling efficient operation in medium-frequency switching applications. Its complementary NPN counterpart (NJVMJD44H11T4G) shares identical package, thermal characteristics, and maximum ratings-simplifying dual-rail design in H-bridge drivers and push-pull amplifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum blocking voltage between collector and emitter under open-base condition; defines voltage headroom in switching regulator output stages. |
| IC (cont.) | 8 A - Continuous collector current rating at TC = 25 °C; supports high-current driver stages without forced cooling. |
| VCE(sat) | ≤1 V @ IC = 8 A, IB = 0.4 A - Low saturation voltage minimizes conduction loss and heat generation in saturated-switching applications. |
| fT | 90 MHz - Current-gain bandwidth product; enables stable operation up to ~10–20 MHz switching frequencies in optimized layouts. |
| RJC | 6.25 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting for thermal management in compact power modules. |
| hFE | ≥40 @ IC = 4 A, VCE = 1 V - Sufficient DC current gain for base-driven switching with moderate drive current requirements. |
| ESD HBM | Class 3B - Human Body Model ESD rating of >8 kV; ensures robustness during board assembly and handling in industrial environments. |
Pinout & Package
DPAK-3 (Case 369C) surface-mount package: 6.10 mm × 6.54 mm × 2.28 mm body, with exposed drain pad (pin 2 & 4) for thermal and electrical connection. Lead-free, RoHS-compliant, UL 94 V-0 epoxy.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on. |
| 2 | Collector | Main high-current output terminal; electrically and thermally connected to exposed copper pad for heatsinking. |
| 3 | Emitter | Reference terminal for PNP operation; typically tied to higher potential (e.g., input rail) in high-side switch configurations. |
| 4 | Collector | Second collector connection - internally bonded to pin 2; improves current sharing and thermal spreading across PCB pad. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for under-hood power modules. |
| Complementary pair with NJVMJD44H11T4G | Matched VCEO, IC, VCE(sat), and SOA enable symmetrical push-pull or H-bridge designs without derating or layout asymmetry. |
| Low RJC = 6.25 °C/W | Enables >3× higher power dissipation than standard SO-8 packages at same case temperature - reduces need for external heatsinks. |
| Fast switching (td + tr = 135 ns) | Reduces transition losses in 100 kHz–500 kHz DC-DC converters, improving efficiency and easing EMI filter design. |
| Pb-free, Halogen-free, RoHS compliant | Meets global environmental compliance mandates for industrial and automotive OEM production without process requalification. |
Applications
| Switching Regulator Output Stage | DC-DC Converter Driver |
|---|---|
|
Use Scenario: High-current buck converter output stage delivering 5–12 V at up to 8 A to FPGA or ASIC core rails. IC Role / Device Role / Timing Role: PNP power switch in synchronous or quasi-synchronous configuration, handling high-side current sourcing during PWM on-time. Use Value: Low VCE(sat) ≤1 V and high fT = 90 MHz reduce conduction and switching losses, enabling >92% efficiency at 300 kHz switching frequency. |
Use Scenario: Dual-rail isolated DC-DC module for industrial PLC I/O power supplies requiring ±15 V outputs. IC Role / Device Role / Timing Role: Complementary PNP/NPN pair (with NJVMJD44H11T4G) in push-pull topology driving center-tapped transformer primary. Use Value: Matched SOA and thermal performance ensure balanced current sharing and prevent thermal runaway during continuous 100% duty-cycle operation. |
| Automotive LED Driver | Industrial Motor Driver Half-Bridge |
|
Use Scenario: Constant-current headlight LED driver in 12 V vehicle systems with PWM dimming control. IC Role / Device Role / Timing Role: High-side PNP switch regulating LED string current via emitter-follower configuration with current-sense feedback. Use Value: AEC-Q101 qualification and −55 °C to +150 °C operating range ensure reliable operation across automotive ambient extremes and load dump transients. |
Use Scenario: 24 V brushed DC motor control in factory automation actuators requiring bidirectional torque and braking. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration, paired with N-channel MOSFET or NPN lower leg for active freewheeling. Use Value: Fast fall time (tf = 100 ns) and low storage time (ts = 500 ns) minimize shoot-through risk and improve PWM resolution down to 1 μs edge timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD45H11T4G | No NJV prefix; not AEC-Q101 qualified or PPAP capable; otherwise identical electrical specs and DPAK-3 package. | Suitable for commercial/industrial use only; excluded from automotive BOMs requiring PPAP documentation. | Select NJVMJD45H11T4G when automotive qualification, traceable lot control, or site-specific change management is required. |
| BD241C | TO-126 package (larger footprint, higher RJA = 50 °C/W); lower fT = 3 MHz; VCEO = 100 V but IC = 6 A only. | Better voltage margin but limited current and thermal performance; unsuitable for high-density or high-frequency designs. | Choose BD241C only if legacy through-hole assembly or higher VCEO margin outweighs switching speed and thermal constraints. |
Compared with MJD45H11T4G, NJVMJD45H11T4G adds automotive qualification and controlled change management without trade-offs in electrical or thermal performance; versus BD241C, it offers superior current capability, faster switching, and surface-mount compatibility at the cost of lower voltage rating.
Availability
NJVMJD45H11T4G is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and automotive LED drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for NJVMJD45H11T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
NJVMJD45H11T4G belongs to the MJD44H11/MJD45H11 complementary power transistor family, designed specifically for high-reliability, surface-mount power switching in automotive and industrial applications demanding AEC-Q101 compliance and robust thermal performance.
FAQ
What is the maximum continuous collector current rating for NJVMJD45H11T4G?
The NJVMJD45H11T4G is rated for 8 A continuous collector current (IC) at case temperature TC = 25 °C. Derating applies above 25 °C at 0.16 W/°C for power dissipation and proportionally for current based on thermal design. This rating assumes proper PCB copper area per onsemi's recommended minimum pad sizes.
Is NJVMJD45H11T4G pin-compatible with NJVMJD44H11T4G?
Yes - NJVMJD45H11T4G and NJVMJD44H11T4G share identical DPAK-3 (Case 369C) package dimensions, pinout (Base–Collector–Emitter–Collector), and thermal characteristics. Their complementary PNP/NPN polarity enables direct placement in symmetrical circuits such as push-pull amplifiers or half-bridge drivers without layout changes.
Does NJVMJD45H11T4G require a heatsink in typical applications?
At full 8 A load with 20 W dissipation, NJVMJD45H11T4G requires a heatsink or substantial copper pour due to RJC = 6.25 °C/W and RJA = 71.4 °C/W. For <3 A continuous operation with adequate 2 oz. copper and thermal vias, heatsinking may be omitted - refer to Figure 3 (Power Derating) in the official datasheet for precise thermal boundary conditions.
What does the "NJV" prefix signify in NJVMJD45H11T4G?
"NJV" denotes an onsemi manufacturing variant meeting automotive and other high-reliability applications requiring unique site control, enhanced change management, AEC-Q101 qualification, and PPAP capability. It is not a functional variant - all electrical, thermal, and mechanical specifications match the base MJD45H11T4G part.
Can NJVMJD45H11T4G be used in linear amplifier applications?
Yes - NJVMJD45H11T4G supports linear operation with hFE ≥40 at IC = 4 A and VCE = 1 V, and SOA curves validated up to 150 °C junction temperature. However, sustained linear use demands careful thermal design due to its 20 W TC = 25 °C limit and second-breakdown constraints shown in Figure 2 of the datasheet.
NJVMJD45H11T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 2A, 1V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 90MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD45H11T4G FAQ
1.How can I place an order for NJVMJD45H11T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD45H11T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD45H11T4G reliable?
The price and inventory of NJVMJD45H11T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD45H11T4G is usually 5 days.
3.What payment methods are accepted for NJVMJD45H11T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD45H11T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD45H11T4G?
NJVMJD45H11T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD45H11T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD45H11T4G?
For technical support, including NJVMJD45H11T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD45H11T4G requirements.
6.How does Aetrix verify that NJVMJD45H11T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJD45H11T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD45H11T4G meets industry standards.
7.What is the process for return or replacement of NJVMJD45H11T4G?
All NJVMJD45H11T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD45H11T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD45H11T4G part is unused and in its original packaging.
Return procedure for NJVMJD45H11T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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