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onsemi NJVMJD45H11T4G-VF01
- Part No.:
- NJVMJD45H11T4G-VF01
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD45H11T4G-VF01.pdf
- Description:
- TRANS PNP 80V 8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,822
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Product details
Overview
NJVMJD45H11T4G-VF01 from onsemi is a PNP complementary power transistor in DPAK (Case 369C) package, rated for 8 A continuous collector current, 80 V collector-emitter voltage, and 20 W power dissipation at TC = 25 °C. It delivers low VCE(sat) of ≤1 V at IC = 8 A/IB = 0.4 A and fast switching with td + tr = 135 ns, suited for output stages in automotive-grade DC-DC converters and industrial motor drivers.
For engineers reviewing the NJVMJD45H11T4G-VF01 datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, thermal resistance RθJC = 6.25 °C/W, complementary pairing with NJVMJD44H11T4G-VF01, and surface-mount DPAK footprint compatibility with IPC-7351B standard land patterns.
Technical Context
This PNP bipolar junction transistor operates in linear and saturated switching modes, with hFE = 40 (min) at IC = 4 A and VCE = 1 V. Its fT = 90 MHz enables stable operation in high-frequency switching regulators up to ~2 MHz when paired with appropriate base drive.
The device features dual-collector terminals (pins 2 and 4) for enhanced thermal and current-handling capability, and is optimized for use in complementary emitter-follower or push-pull configurations where matched NPN/PNP characteristics reduce crossover distortion in Class AB amplifiers and half-bridge drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum blocking voltage between collector and emitter under open-base conditions; defines safe operating range in flyback snubbers and relay drivers. |
| IC (cont) | 8 A - Continuous DC collector current rating at TC = 25 °C; supports 12 V/24 V automotive load switching up to ~100 W per device. |
| VCE(sat) | ≤1 V @ IC = 8 A, IB = 0.4 A - Low saturation voltage minimizes conduction loss and heat generation in high-current switching applications. |
| fT | 90 MHz - Current-gain bandwidth product enabling stable gain above audio frequencies; suitable for PWM control loops with <500 ns response requirements. |
| RθJC | 6.25 °C/W - Junction-to-case thermal resistance; allows direct mounting to heatsinks without thermal interface material for ≤15 W dissipation at ΔT = 94 °C. |
| hFE | 40 min @ IC = 4 A - Minimum DC current gain ensures reliable base drive sizing across temperature (−55 °C to +150 °C). |
| ts + tf | 600 ns total - Storage + fall time at IC = 5 A; enables efficient operation in 100–500 kHz switching converters with minimal switching loss. |
Pinout & Package
DPAK-3 (Case 369C), surface-mount plastic package with exposed drain pad (pin 2/4) for thermal enhancement; dimensions 6.10 × 6.54 × 2.28 mm, pitch 2.29 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input requiring ≥0.4 A base drive for full saturation at 8 A collector current; connected to driver IC or microcontroller GPIO via current-limiting resistor. |
| 2 | Collector | Main high-side current path; electrically tied to pin 4; soldered to PCB copper pour for thermal conduction to heatsink or ground plane. |
| 3 | Emiter | Power return node; connects to load or supply rail; must be routed with low-inductance trace to minimize switching ringing. |
| 4 | Collector | Second collector terminal, internally bonded to pin 2; used for redundant connection or split-current routing to reduce bond wire stress. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control modules and body electronics with guaranteed operation from −40 °C to +150 °C junction temperature. |
| Complementary pairing | Matched electrical specs with NJVMJD44H11T4G-VF01 enable symmetrical push-pull designs without gain or timing skew compensation. |
| Low VCE(sat) | ≤1 V at rated current reduces conduction loss by >30% vs. legacy D45H11, improving efficiency in 12 V battery-powered systems. |
| Pb-free, RoHS compliant | Meets J-STD-020 moisture sensitivity level 1 (MSL1); compatible with lead-free reflow profiles up to 260 °C peak temperature. |
| Dual collector terminals | Redundant pins 2 and 4 lower effective thermal resistance and improve current sharing in high-reliability industrial power supplies. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drivers |
|---|---|
|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in EV power distribution units. IC Role / Device Role / Timing Role: PNP switch in synchronous buck high-side position, operating at 250 kHz with 300 ns turn-off delay. Use Value: Low VCE(sat) and fast tf = 100 ns minimize switching and conduction losses, enabling >92% efficiency at 5 A output. |
Use Scenario: H-bridge output stage for 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Complementary PNP switch in totem-pole configuration, driven by isolated gate driver with 0.5 A peak current. Use Value: Matched hFE and fT with NJVMJD44H11T4G-VF01 ensure balanced rise/fall times and reduced shoot-through risk. |
| Switching Regulator Output Stage | High-Current Relay Drivers |
|
Use Scenario: Primary-side switch in offline 12 V/5 A flyback converter for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Linear-regulated pass element during startup; transitions to saturated switch mode during normal operation. Use Value: SOA curve supports 100 ms pulse at 8 A/40 V, enabling robust inrush current limiting without external foldback circuitry. |
Use Scenario: High-side driver for 24 V/5 A electromagnetic relays in building HVAC control panels. IC Role / Device Role / Timing Role: Saturated switch controlling relay coil with 100 ms on-time and 10 ms off-time cycling. Use Value: RθJC = 6.25 °C/W allows direct PCB copper heatsinking, eliminating discrete heatsinks and reducing BOM count by one component. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD45H11T4G | No NJV prefix; not AEC-Q101 qualified; identical electrical specs and DPAK-3 package. | Limited to commercial/industrial use; unsuitable for automotive PPAP-controlled production. | Select when automotive qualification is unnecessary and cost sensitivity outweighs long-term supply assurance. |
| STP16PF06 | PNP MOSFET (not BJT); VCE(max) = 60 V, ID = 16 A; logic-level gate; RDS(on) = 0.06 Ω. | Lower drive complexity but higher gate charge; requires different gate driver topology and lacks inherent current gain. | Choose for ultra-low conduction loss in 24 V systems where gate drive resources permit; avoid if base-driven simplicity is required. |
Compared with MJD45H11T4G, NJVMJD45H11T4G-VF01 adds automotive traceability and PPAP support without sacrificing performance; versus STP16PF06, it offers simpler drive architecture and better thermal stability at high current but trades off conduction efficiency below 2 A.
Availability
NJVMJD45H11T4G-VF01 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and high-reliability relay driving requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for NJVMJD45H11T4G-VF01 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.
NJVMJD45H11T4G-VF01 belongs to the MJD45H11 family of complementary power transistors designed specifically for ruggedized surface-mount switching in automotive and industrial environments demanding AEC-Q101 compliance and high thermal reliability.
FAQ
What is the maximum junction temperature rating for NJVMJD45H11T4G-VF01?
The NJVMJD45H11T4G-VF01 has an operating junction temperature range of −55 °C to +150 °C, verified per AEC-Q101 stress testing. This rating applies under specified power dissipation limits and thermal management conditions outlined in the datasheet's SOA and derating curves. Exceeding TJ = 150 °C risks permanent degradation of hFE and increased leakage current.
Is NJVMJD45H11T4G-VF01 pin-compatible with NJVMJD44H11T4G-VF01?
Yes, NJVMJD45H11T4G-VF01 and NJVMJD44H11T4G-VF01 share identical DPAK-3 (Case 369C) packaging, pinout (base-collector-emitter-collector), and mechanical footprint. Their complementary polarity and matched electrical parameters-including VCEO, IC, hFE, and switching times-enable direct placement in push-pull or H-bridge layouts without PCB redesign.
Does NJVMJD45H11T4G-VF01 require a heatsink in typical 8 A switching applications?
In continuous 8 A operation at ambient temperatures above 40 °C, NJVMJD45H11T4G-VF01 requires a heatsink or substantial copper pour due to its PD = 1.75 W at TA = 25 °C and RθJA = 71.4 °C/W. With RθJC = 6.25 °C/W, attaching the exposed collector pad to a 25 cm² internal copper layer reduces effective RθJA to ~35 °C/W, permitting 8 A operation up to TC ≈ 75 °C.
What is the ESD rating of NJVMJD45H11T4G-VF01 according to the datasheet?
The NJVMJD45H11T4G-VF01 is rated at ESD − Human Body Model (HBM) Class 3B, corresponding to ±8 kV per JEDEC JS-001. No Machine Model (MM) rating is specified in the datasheet. Handling requires standard ESD precautions including grounded workstations and ionized air, especially during automated placement.
Can NJVMJD45H11T4G-VF01 be used in linear regulator applications?
Yes, NJVMJD45H11T4G-VF01 supports linear operation within its Safe Operating Area (SOA), including DC and pulsed conditions up to 8 A/80 V. Its SOA curve (Figure 2) confirms viability for series-pass regulation in 24 V/3 A industrial supplies, provided adequate heatsinking maintains TJ ≤ 150 °C and second-breakdown limits are observed at high VCE/low IC combinations.
NJVMJD45H11T4G-VF01 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 90MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD45H11T4G-VF01 FAQ
1.How can I place an order for NJVMJD45H11T4G-VF01 through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD45H11T4G-VF01 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD45H11T4G-VF01 reliable?
The price and inventory of NJVMJD45H11T4G-VF01 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD45H11T4G-VF01 is usually 5 days.
3.What payment methods are accepted for NJVMJD45H11T4G-VF01?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD45H11T4G-VF01 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD45H11T4G-VF01?
NJVMJD45H11T4G-VF01 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD45H11T4G-VF01 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD45H11T4G-VF01?
For technical support, including NJVMJD45H11T4G-VF01 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD45H11T4G-VF01 requirements.
6.How does Aetrix verify that NJVMJD45H11T4G-VF01 is sourced from the original manufacturer or authorized distributors?
All NJVMJD45H11T4G-VF01 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD45H11T4G-VF01 meets industry standards.
7.What is the process for return or replacement of NJVMJD45H11T4G-VF01?
All NJVMJD45H11T4G-VF01 units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD45H11T4G-VF01, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD45H11T4G-VF01 part is unused and in its original packaging.
Return procedure for NJVMJD45H11T4G-VF01:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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