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onsemi NJVMJD6039T4G
- Part No.:
- NJVMJD6039T4G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
NJVMJD6039T4G.pdf
- Description:
- TRANS NPN DARL 80V 4A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,613
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Product details
Overview
NJVMJD6039T4G from onsemi is an NPN Darlington power transistor in DPAK package, rated for 80 VCEO, 4 A continuous collector current, and 20 W power dissipation at TC = 25°C, with typical DC current gain (hFE) of 2500 at IC = 4.0 A - designed for high-current switching stages in automotive-grade DC-DC converters and industrial motor driver output circuits.
For engineers reviewing the NJVMJD6039T4G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, thermal resistance values (RJC = 6.25°C/W), safe operating area limits, and AEC-Q101 qualification status required for automotive power stage design validation.
Technical Context
This device implements a monolithic NPN Darlington pair with built-in base-emitter shunt resistors to ensure reliable turn-off and reduce external component count. Its structure supports high DC current gain while maintaining low saturation voltage (VCE(sat) ≤ 2.5 V at IC = 2 A, IB = 8 mA) and robust ESD protection (HBM > 8 kV, MM > 400 V).
Designed for surface-mount operation in DPAK (Case 369C), it operates across −65°C to +150°C junction temperature range and meets UL 94 V-0 flammability rating at 0.125 in thickness. The NJVMJD6039T4G variant carries the "NJV" prefix indicating AEC-Q101 qualification and PPAP capability for automotive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum collector-emitter sustaining voltage under open-base conditions; defines maximum blocking capability in switching regulator topologies. |
| IC (continuous) | 4 A - Continuous collector current rating at TC = 25°C; sets baseline current-handling capacity for motor driver H-bridge legs. |
| PD @ TC = 25°C | 20 W - Total power dissipation limit with heatsink contact; enables high-efficiency thermal management in compact power modules. |
| hFE (typ) | 2500 @ IC = 4.0 A - High DC current gain reduces required base drive current, simplifying gate driver interface design. |
| RJC | 6.25 °C/W - Junction-to-case thermal resistance; critical for calculating heatsink requirements when mounting to PCB copper planes. |
| VBE(on) | 2.8 V @ IC = 2 A - Base-emitter forward voltage determines minimum drive voltage needed for full conduction in linear or switching modes. |
| AEC-Q101 | Qualified - Confirmed reliability for automotive power electronics per stress test standard; supports PPAP documentation for Tier 1 suppliers. |
Pinout & Package
DPAK (Case 369C, Style 1) surface-mount package with 4 terminals: pins 1–4 arranged in single-row configuration; thermally enhanced plastic body measuring 6.10 × 6.54 × 2.28 mm, featuring exposed collector tab (pins 2 and 4) for direct PCB thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires current-limited drive due to Darlington architecture; internal shunt resistor aids turn-off. |
| 2 | Collector | Main high-current output terminal; electrically and thermally connected to exposed metal pad for heatsinking. |
| 3 | Emiter | Power return path; referenced to system ground in low-side switch configurations; carries full load current. |
| 4 | Collector | Second collector connection - paralleled with Pin 2 to reduce bond wire resistance and improve current sharing in high-power operation. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington with integrated base-emitter shunt resistors | Eliminates need for external turn-off resistors; ensures predictable and stable off-state leakage in automotive environments. |
| AEC-Q101 qualified with PPAP capability | Validated for automotive under-hood applications including engine control modules and body electronics requiring zero-defect reliability. |
| UL 94 V-0 epoxy encapsulation | Meets stringent flammability requirements for safety-critical industrial and transportation equipment enclosures. |
| High hFE = 2500 (typ) at 4 A | Reduces base drive circuit complexity and power loss; enables use with low-current microcontroller GPIOs or small buffer ICs. |
| Pb-free DPAK package (G suffix) | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile; compatible with lead-free assembly processes. |
Applications
| Automotive DC-DC Converters | Industrial Motor Driver Outputs |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter in engine control unit (ECU) power supply. IC Role / Device Role / Timing Role: Main switching transistor in synchronous rectifier or freewheeling path; handles peak currents up to 4 A during transient loads. Use Value: Low VCE(sat) (≤2.5 V) minimizes conduction loss; AEC-Q101 qualification ensures long-term reliability under thermal cycling and vibration. | Use Scenario: Low-side switch in brushed DC motor driver for HVAC blower or seat actuator. IC Role / Device Role / Timing Role: Power stage transistor controlling motor direction and speed via PWM; operated in saturated switching mode. Use Value: High hFE allows direct drive from MCU outputs; DPAK thermal performance sustains 20 W dissipation without oversized heatsinks. |
| Switching Regulator Output Stages | Power Amplifier Driver Circuits |
Use Scenario: Output switch in isolated flyback or forward converter for industrial PLC I/O module power rails. IC Role / Device Role / Timing Role: Primary-side switching element handling repetitive 80 V, 4 A pulses at up to 100 kHz. Use Value: SOA curves support safe operation up to second-breakdown limits; RJC = 6.25°C/W enables precise thermal modeling for board-level layout. | Use Scenario: Class AB driver stage in audio amplifier output section delivering ≥3 W into 8 Ω load. IC Role / Device Role / Timing Role: Current amplification stage boosting signal from preamp to speaker-level power; biased in linear region. Use Value: Stable hFE over temperature ensures consistent gain; VCEO = 80 V accommodates rail voltages up to ±35 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD6039T4G | Same die, Pb-free DPAK, no NJV prefix; not AEC-Q101 qualified | General industrial use only; lacks automotive traceability and PPAP support | Select when AEC-Q101 compliance is unnecessary and cost sensitivity outweighs qualification requirements. |
| BD679A | TO-126 package, lower IC = 2 A, VCEO = 80 V, hFE = 750 (min) | Requires through-hole assembly; limited to lower-power linear/switching applications | Choose for legacy designs or prototyping where DPAK footprint is unavailable and thermal demands are modest. |
Compared with MJD6039T4G and BD679A, the NJVMJD6039T4G provides automotive-grade reliability and higher current gain in a surface-mount package - making it optimal for new automotive power designs where qualification, thermal density, and drive simplicity are prioritized.
Availability
NJVMJD6039T4G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drivers, and switching regulator output stages requiring stable component supply and long-term lifecycle support.
Supply support for NJVMJD6039T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NJVMJD6039T4G belongs to onsemi's Darlington Power Transistor product line, engineered specifically for high-current, high-voltage switching applications in harsh-environment systems where reliability, thermal performance, and qualification compliance are mandatory.
FAQ
Is NJVMJD6039T4G still in active production?
No - according to onsemi's official datasheet (Rev. 10, December 2024), NJVMJD6039T4G is marked as DISCONTINUED and not recommended for new designs. However, Aetrix Electronics maintains legacy inventory and offers lifecycle management support including last-time buy planning and cross-reference guidance for the NJVMJD6039T4G.
What does the "NJV" prefix signify in NJVMJD6039T4G?
The "NJV" prefix in NJVMJD6039T4G indicates onsemi's dedicated automotive qualification track: it confirms AEC-Q101 stress testing, PPAP capability, and controlled manufacturing site/process change protocols - distinguishing it from standard MJD6039T4G variants intended for industrial use only.
Can NJVMJD6039T4G replace MJD6039T4G directly in a PCB layout?
Yes - NJVMJD6039T4G shares identical DPAK (Case 369C) mechanical dimensions, pinout (Style 1), and solder footprint with MJD6039T4G. No PCB changes are required; however, NJVMJD6039T4G adds AEC-Q101 qualification and tighter process controls, making it suitable for automotive deployment where MJD6039T4G is not approved.
What is the maximum safe operating area (SOA) limit for NJVMJD6039T4G at 100 µs pulse width?
Per Figure 4 in the onsemi datasheet, the NJVMJD6039T4G supports up to 4 A at 80 V (320 W) for 100 µs single-pulse operation within its second breakdown limit. This defines the absolute boundary for short-duration surge handling in motor stall or inductive kick scenarios without device failure.
Does NJVMJD6039T4G require a heatsink in typical 4 A switching applications?
At 4 A continuous conduction with 20 W dissipation, NJVMJD6039T4G requires thermal management: its RJC = 6.25°C/W means even with ideal case-to-heatsink interface, junction temperature will rise significantly above ambient. A heatsink or substantial copper pour (≥250 mm²) is mandatory to maintain TJ ≤ 150°C in sustained operation - confirmed by Figure 5 derating curves.
NJVMJD6039T4G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 500 @ 2A, 4V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
NJVMJD6039T4G FAQ
1.How can I place an order for NJVMJD6039T4G through Aetrix?
Please submit a Request for Quotation (RFQ) for NJVMJD6039T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NJVMJD6039T4G reliable?
The price and inventory of NJVMJD6039T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVMJD6039T4G is usually 5 days.
3.What payment methods are accepted for NJVMJD6039T4G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVMJD6039T4G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NJVMJD6039T4G?
NJVMJD6039T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NJVMJD6039T4G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NJVMJD6039T4G?
For technical support, including NJVMJD6039T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVMJD6039T4G requirements.
6.How does Aetrix verify that NJVMJD6039T4G is sourced from the original manufacturer or authorized distributors?
All NJVMJD6039T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVMJD6039T4G meets industry standards.
7.What is the process for return or replacement of NJVMJD6039T4G?
All NJVMJD6039T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVMJD6039T4G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NJVMJD6039T4G part is unused and in its original packaging.
Return procedure for NJVMJD6039T4G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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