Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi NJVNJD1718T4G

Part No.:
NJVNJD1718T4G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixNJVNJD1718T4G.pdf
Description:
TRANS PNP 50V 2A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NJVNJD1718T4G from onsemi is a PNP silicon power transistor in DPAK (TO-252) package, rated for −50 V VCEO, −2 A continuous collector current, and 15 W dissipation at TC = 25 °C. It delivers low VCE(sat) of −0.5 V (IC = −1 A, IB = −0.05 A), high DC current gain (hFE = 70–240), and fast switching (tON = 55 ns, tf = 40 ns), designed for high-gain audio amplifiers and power switching circuits.

For engineers reviewing the NJVNJD1718T4G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC−Q101 qualification, Pb-free/halogen-free construction, thermal resistance (RJC = 10 °C/W), ESD robustness (HBM Class 3B), and DPAK surface-mount compatibility with minimum pad layout.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear amplification and hard-switching duty. Its design emphasizes low saturation voltage and high fT (80 MHz), enabling efficient operation in Class AB audio stages and DC-DC converter switch nodes where gain stability across temperature (−65 to +150 °C) and low leakage (ICBO ≤ −100 nA) are critical.

The NJVNJD1718T4G features dual-collector terminals (pins 2 and 4) in the DPAK−3 package to reduce bond wire inductance and improve current sharing. Its thermal architecture supports direct heatsinking via the exposed drain tab (pin 2/4), and it meets UL 94 V−0 flammability rating at 0.125 in thickness - essential for automotive and industrial power modules requiring safety certification.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 Vdc - Maximum safe collector-emitter blocking voltage in open-base configuration; defines usable rail voltage headroom in high-side switch or amplifier output stage.
IC (cont.) −2 Adc - Continuous collector current capability at TC = 25 °C; derates linearly above 25 °C (0.1 W/°C), supporting sustained 1.5 A operation up to ~80 °C case temperature.
VCE(sat) −0.2 to −0.5 Vdc (IC = −1 A, IB = −0.05 A) - Low saturation voltage minimizes conduction loss and heat generation in switching applications, improving efficiency in <100 kHz power stages.
hFE 70–240 (IC = −0.5 A to −1.5 A, VCE = 2 V) - High DC current gain enables low base drive current requirements, reducing driver circuit complexity and quiescent power.
fT 80 MHz - Current-gain bandwidth product ensures stable small-signal amplification up to audio frequencies and supports fast edge transitions in pulse-width modulated loads.
RJC 10 °C/W - Junction-to-case thermal resistance allows direct mounting to heatsinks; enables 15 W power dissipation with ≤150 °C junction rise over case temperature.
HBM ESD Class 3B (≥8 kV) - Robust human-body-model ESD tolerance simplifies handling and board-level protection design in automotive assembly environments.

Pinout & Package

The NJVNJD1718T4G is housed in a DPAK (TO-252-3) surface-mount package (Case 369C, Style 1), featuring an exposed metal tab (pins 2 and 4) for thermal and electrical connection to collector. The package measures 6.10 × 6.54 × 2.28 mm with 2.29 mm lead pitch and meets UL 94 V−0 flammability standard.

Pin/Terminal Circuit Role Design Meaning
1 Base Control input terminal; requires negative bias relative to emitter to turn on; low IB max (−0.4 A) enables drive with standard logic-level or dedicated BJT drivers.
2 Collector Main high-current output terminal; electrically and thermally connected to exposed tab; used for primary collector connection and heatsink interface.
3 Emitter Reference node for base-emitter junction; tied to system ground or positive rail in high-side configurations; carries full load current.
4 Collector Secondary collector terminal, internally bonded to pin 2; reduces parasitic inductance and improves current distribution during fast switching transients.

Key Features

Feature Design Value
Low VCE(sat) −0.2 V typical at IC = −1 A - Reduces conduction losses by >40% vs. standard PNP transistors, directly lowering thermal stress in compact audio amplifier outputs.
AEC−Q101 Qualified Qualified for automotive power electronics - Validated for temperature cycling, humidity, mechanical shock, and lifetime reliability per AEC standards; supports PPAP documentation.
Dual Collector Terminals Pins 2 and 4 both connect to collector - Enables parallel PCB traces or split routing to minimize loop inductance in high-di/dt switching paths, improving EMI performance.
Pb-Free / Halogen-Free RoHS-compliant, UL 94 V−0 rated epoxy - Meets global environmental regulations and fire safety requirements for industrial control panels and automotive ECUs.
High fT & Fast Switching 80 MHz fT, tON/tf = 55/40 ns - Supports clean square-wave switching in 20–50 kHz SMPS and wideband audio preamp stages without phase distortion or slew limiting.

Applications

Automotive Audio Amplifiers Industrial DC-DC Converters

Use Scenario: Output stage in Class AB or Class G automotive head unit amplifiers driving 4 Ω speakers.

IC Role / Device Role / Timing Role: PNP complementary power switch delivering negative half-cycle current with matched gain and thermal tracking to NPN counterparts.

Use Value: Low VCE(sat) and high hFE reduce idle current mismatch and crossover distortion, while AEC−Q101 qualification ensures reliability across vehicle temperature extremes.

Use Scenario: High-side synchronous rectifier or active clamp switch in isolated flyback or forward converters (24–48 V input).

IC Role / Device Role / Timing Role: Medium-power PNP switch controlling energy transfer timing and clamping voltage spikes during MOSFET dead-time intervals.

Use Value: Dual collector pins and 80 MHz fT enable precise timing control and low-loss clamping, improving efficiency and reducing snubber component count.

Power Supply Protection Circuits Industrial Motor Driver Stages

Use Scenario: Overcurrent shutdown element in programmable current-limiting LDOs or battery protection ICs.

IC Role / Device Role / Timing Role: Fast-acting current-sensing switch that latches off supply when fault current exceeds threshold.

Use Value: 40 ns fall time and −100 nA ICBO ensure rapid, low-leakage fault detection and hold-off, preventing false triggers in noisy factory environments.

Use Scenario: Directional current control in H-bridge half-bridge legs for 12–24 V brushed DC motor drives (e.g., HVAC actuators, valve controllers).

IC Role / Device Role / Timing Role: Complementary PNP switch providing bidirectional current path with matched thermal behavior to N-channel counterparts.

Use Value: RJC = 10 °C/W and 150 °C max TJ allow sustained 1.2 A operation under forced-air cooling, supporting continuous-duty industrial actuation cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD1718T4G Same die, identical electrical specs, but lacks NJV prefix and AEC−Q101 qualification; not PPAP-capable. Suitable for non-automotive industrial or consumer-grade designs where automotive reliability validation is not required. Select MJD1718T4G for cost-sensitive non-automotive applications with identical performance needs and no PPAP requirement.
PN3565 Lower power rating (1 W @ TA, VCEO = −40 V, IC = −0.5 A); TO-92 package; no AEC−Q101 or DPAK thermal performance. Limited to low-power signal switching or bias networks - cannot replace NJVNJD1718T4G in power amplification or switching roles. Choose PN3565 only for sub-100 mW general-purpose PNP tasks; not a functional replacement for NJVNJD1718T4G in power applications.

Compared with MJD1718T4G and PN3565, the NJVNJD1718T4G uniquely combines AEC−Q101 qualification, DPAK thermal performance (15 W @ TC), and dual-collector layout - making it the sole option for automotive-grade, medium-power PNP switching where reliability, power density, and EMI control are jointly critical.

Availability

NJVNJD1718T4G is available at Aetrix Electronics and suitable for automotive audio systems, industrial DC-DC converters, and motor driver protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for NJVNJD1718T4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud infrastructure markets.

The NJVNJD1718T4G belongs to onsemi's NJV-series automotive-qualified power transistor family, engineered specifically for high-reliability, high-gain PNP switching in engine control units, body electronics, and infotainment power stages.

FAQ

What is the maximum continuous collector current rating for NJVNJD1718T4G?

The NJVNJD1718T4G has a maximum continuous collector current (IC) of −2 A at case temperature TC = 25 °C. This rating decreases linearly with rising case temperature at 0.1 W/°C due to thermal derating - meaning at TC = 75 °C, the usable IC drops to approximately −1.5 A. Always verify actual junction temperature using RJC = 10 °C/W and ambient conditions in your layout.

Is NJVNJD1718T4G pin-compatible with NJD1718T4G?

Yes, NJVNJD1718T4G is pin-compatible with NJD1718T4G - both use identical DPAK−3 (Case 369C, Style 1) packaging with base (pin 1), collector (pins 2 and 4), and emitter (pin 3) assignments. However, NJVNJD1718T4G adds the NJV prefix denoting AEC−Q101 qualification and PPAP capability, while NJD1718T4G is intended for general industrial use without automotive validation.

What does the "NJV" prefix signify in NJVNJD1718T4G?

The "NJV" prefix in NJVNJD1718T4G indicates that the device is manufactured under onsemi's automotive-specific process flow, meeting AEC−Q101 stress test requirements and supporting Production Part Approval Process (PPAP) documentation. It also reflects unique site and change control protocols required for automotive Tier 1 suppliers - distinguishing it from standard NJD1718 variants.

Can NJVNJD1718T4G be used in surface-mount audio amplifier designs?

Yes, NJVNJD1718T4G is explicitly designed for surface-mount applications in high-gain audio amplifiers. Its DPAK package provides superior thermal performance over through-hole alternatives, and its low VCE(sat) (−0.5 V max), high hFE (up to 240), and fast switching (tf = 40 ns) minimize distortion and thermal drift in Class AB output stages driving 4–8 Ω loads.

Does NJVNJD1718T4G require external heatsinking in typical operation?

NJVNJD1718T4G benefits significantly from heatsinking when operating above 1 W continuous dissipation. With RJC = 10 °C/W and RJA = 89.3 °C/W (on minimum pads), even modest power levels (e.g., 2 W) can exceed 125 °C junction temperature without thermal relief. Mounting the exposed collector tab (pins 2/4) to a copper pour or external heatsink is strongly recommended for reliable operation above 500 mW.

NJVNJD1718T4G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 500mA, 2V
Power - Max:
1.68 W
Frequency - Transition:
80MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

NJVNJD1718T4G FAQ

1.How can I place an order for NJVNJD1718T4G through Aetrix?

Please submit a Request for Quotation (RFQ) for NJVNJD1718T4G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NJVNJD1718T4G reliable?

The price and inventory of NJVNJD1718T4G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NJVNJD1718T4G is usually 5 days.

3.What payment methods are accepted for NJVNJD1718T4G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NJVNJD1718T4G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NJVNJD1718T4G?

NJVNJD1718T4G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NJVNJD1718T4G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NJVNJD1718T4G?

For technical support, including NJVNJD1718T4G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NJVNJD1718T4G requirements.

6.How does Aetrix verify that NJVNJD1718T4G is sourced from the original manufacturer or authorized distributors?

All NJVNJD1718T4G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NJVNJD1718T4G meets industry standards.

7.What is the process for return or replacement of NJVNJD1718T4G?

All NJVNJD1718T4G units undergo pre-shipment inspection (PSI). If there is an issue with NJVNJD1718T4G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NJVNJD1718T4G part is unused and in its original packaging.

Return procedure for NJVNJD1718T4G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NJVNJD1718T4G Tags

  • NJVNJD1718T4G
  • NJVNJD1718T4G PDF
  • NJVNJD1718T4G Datasheet
  • NJVNJD1718T4G Specifications
  • NJVNJD1718T4G Images
  • onsemi
  • onsemi NJVNJD1718T4G
  • Buy NJVNJD1718T4G
  • NJVNJD1718T4G Price
  • NJVNJD1718T4G Distributor
  • NJVNJD1718T4G Supplier
  • NJVNJD1718T4G Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER