onsemi NLSF3T126MNR2G

Overview

NLSF3T126MNR2G from onsemi is a high-speed CMOS quad bus buffer with 3-state control inputs, designed for level translation between 3.3 V and 5.0 V systems. It features noninverting logic, TTL-compatible inputs (VIL = 0.8 V, VIH = 2.0 V), full 5.0 V CMOS output swing, and operates across 2.0 V to 5.5 V supply range. Its tPD = 3.8 ns (typ @ VCC = 5.0 V) and 3-state enable (OE low) support high-density data bus interfacing in industrial controllers and mixed-voltage microprocessor systems.

For engineers reviewing the NLSF3T126MNR2G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, QFN-16 package layout, noise immunity metrics (VOLP ≤ 0.8 V), input tolerance up to 7.0 V, and real-world interface use cases - all validated against onsemi's official Rev. 6 datasheet (May 2024).

Technical Context

The NLSF3T126MNR2G implements four independent noninverting buffers, each with active-high output enable (OE), enabling simultaneous 3-state control of all outputs. Its silicon gate CMOS process delivers bipolar-equivalent speed while maintaining CMOS power efficiency (ICC ≤ 4.0 µA max @ TA = 25°C).

Input structures tolerate 0 V to 5.5 V regardless of VCC, and outputs remain protected even when VCC = 0 V - critical for hot-insertion and battery-backup scenarios. The three-stage internal buffer architecture ensures high noise immunity (VOLP ≤ 0.8 V) and balanced propagation delays across channels.

Key Specifications

Pinout & Package

Package: QFN-16 (3 mm × 3 mm, 0.5 mm pitch, exposed pad), case 485G, Pb-free. Thermal pad must be soldered to PCB ground plane for optimal thermal performance and EMI suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quad bus buffer applications.

Compared with SN74LVC126APWR and 74LVT126PW,118, the NLSF3T126MNR2G uniquely combines 2.0–5.5 V operation, 7.0 V input tolerance, and QFN-16 layout - making it the sole option for ruggedized 3.3 V ↔ 5 V bridging without voltage translators or layout changes.

Availability

NLSF3T126MNR2G is available at Aetrix Electronics and suitable for industrial PLC backplanes, automotive body control modules, mixed-voltage microcontroller expansion buses, and test equipment digital I/O subsystems requiring stable component supply and long-term lifecycle assurance.

Supply support for NLSF3T126MNR2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, logic, and sensing solutions for automotive, industrial, and cloud infrastructure markets.

The NLSF3T126MNR2G belongs to onsemi's high-speed logic family, engineered specifically for robust voltage-level translation and bus buffering in mixed-supply embedded systems where reliability, wide VCC range, and input overvoltage tolerance are mandatory.

FAQ

What is the maximum input voltage the NLSF3T126MNR2G can safely tolerate?

The NLSF3T126MNR2G inputs tolerate −0.5 V to +7.0 V regardless of supply voltage - confirmed in the Absolute Maximum Ratings table. This allows direct connection of 5 V signals into a 3.3 V system without risk of damage, and supports hot-insertion scenarios where input voltage may be present before VCC ramps. The NLSF3T126MNR2G achieves this via integrated input protection diodes and clamping structures.

Does the NLSF3T126MNR2G support true 5 V CMOS output swing?

Yes. The NLSF3T126MNR2G delivers full rail-to-rail CMOS output swing: VOH ≥ 4.4 V and VOL ≤ 0.1 V at VCC = 4.5 V with 8 mA load - per DC Electrical Characteristics. This qualifies it as a level converter from 3.3 V logic to 5 V peripherals, unlike LVC-series buffers limited to VCC-referenced outputs. The NLSF3T126MNR2G maintains this performance across its entire 2.0–5.5 V operating range.

Can the NLSF3T126MNR2G outputs be left floating when disabled?

No. When in 3-state (high-impedance) mode, outputs must not be left floating in noisy environments. The datasheet specifies that unused outputs should be terminated with appropriate pull-up/down resistors to prevent unintended switching or EMI coupling. This applies equally to the NLSF3T126MNR2G - its 3-state leakage (IOZ ≤ ±2.5 µA) is low but insufficient to guarantee stable DC bias without external termination.

Is the exposed pad on the NLSF3T126MNR2G package electrically connected?

Yes. The exposed pad (EP) of the NLSF3T126MNR2G QFN-16 package is internally connected to GND. Per the mechanical drawing and thermal guidelines, it must be soldered to a PCB ground plane with ≥4 thermal vias to ensure adequate heat dissipation (max PD = 500 mW) and reduce ground bounce. Leaving the EP unconnected degrades thermal performance and increases noise susceptibility.

What is the recommended decoupling for the NLSF3T126MNR2G?

A 0.1 µF ceramic capacitor must be placed between Pin 16 (VCC) and Pin 11 (GND), with both leads ≤3 mm from the respective pins. This is mandated in the "Design Considerations" section to suppress high-frequency supply noise generated by fast 3.8 ns transitions. Additional bulk capacitance (e.g., 4.7 µF tantalum) is advised near the power entry point, but the 0.1 µF local decoupler is essential for stable NLSF3T126MNR2G operation.