onsemi NLSV1T34DFT2G

Overview

NLSV1T34DFT2G from onsemi is a 1-bit dual-supply non-inverting level translator enabling bidirectional voltage translation between 0.9 V and 4.5 V domains. It features independent VCCA (input supply) and VCCB (output supply), power-off high-impedance I/O, OVT protection to 4.5 V, and supports mobile interface bridging between low-voltage application processors and legacy peripherals. Typical use includes translating GPIO signals between 1.2 V SoC rails and 3.3 V sensors.

For engineers reviewing the NLSV1T34DFT2G datasheet, pinout, applications, or equivalent options, key selection criteria include dual-rail sequencing tolerance, sub-2.5 ns propagation delay at 3.3 V, ultra-low static current (<4 µA), SC-88A package footprint compatibility, and AEC-Q100 qualification for automotive edge nodes.

Technical Context

The NLSV1T34DFT2G implements a passive MOSFET-based translation architecture with no internal level-shifting logic or direction control pin. Its input (A) and output (B) terminals are directly coupled through back-to-back FETs, allowing automatic direction sensing based on relative VCCA/VCCB levels and signal state.

It operates across asymmetric supply configurations - e.g., VCCA = 1.2 V / VCCB = 3.3 V - with guaranteed VIH/VIL thresholds scaling with VCCA and VOH/VOL performance referenced to VCCB. Power-off protection ensures both A and B pins remain high-impedance when either supply is at 0 V.

Key Specifications

Pinout & Package

SC-88A (SOT-353/SC-70) package: 2.0 mm × 2.1 mm body, 0.65 mm pitch, 5-pin configuration with exposed pad not present. Compatible with standard reflow profiles for lead-free assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar level translation applications.

Compared with TXS0101DCKR and SN74AVC1T45DBVR, the NLSV1T34DFT2G delivers lower static current, broader supply flexibility (0.9–4.5 V), integrated OVT protection, and AEC-Q100 compliance - making it optimal for space-constrained, battery-sensitive, and automotive-qualified designs where automatic direction sensing is required.

Availability

NLSV1T34DFT2G is available at Aetrix Electronics and suitable for mobile sensor interfaces, automotive body controllers, industrial PLC I/O expansion, and wearable health monitors requiring stable component supply and long-term lifecycle support.

Supply support for NLSV1T34DFT2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NLSV1T34DFT2G belongs to onsemi's precision level translation product line, engineered specifically for ultra-low-power, multi-rail interoperability in portable and automotive edge devices where supply sequencing unpredictability and space constraints dominate design priorities.

FAQ

What is the maximum supported data rate for NLSV1T34DFT2G in a 3.3 V to 1.8 V translation setup?

The NLSV1T34DFT2G achieves a maximum propagation delay of 2.3 ns (tPLH/tPHL) when translating between 3.3 V and 1.8 V rails. This corresponds to a theoretical maximum data rate of ~217 MHz for clean square-wave signals under recommended load conditions (CL = 15 pF, RL = 2 kΩ). Real-world I²C or SPI implementations typically operate reliably up to 40 MHz due to rise/fall time and bus capacitance limitations. The NLSV1T34DFT2G datasheet confirms this performance across −40°C to +85°C.

Does NLSV1T34DFT2G require external pull-up resistors on the A or B side?

No, the NLSV1T34DFT2G does not require external pull-up resistors on either the A or B side for basic level translation functionality. Its internal MOSFET structure provides active drive capability in both directions. However, pull-ups may still be needed depending on the driven bus topology - for example, I²C buses require pull-ups on both sides per protocol specification, independent of the NLSV1T34DFT2G's internal operation.

Can NLSV1T34DFT2G translate signals when VCCA = 0 V and VCCB = 3.3 V?

Yes, the NLSV1T34DFT2G maintains high-impedance (Hi-Z) states on both A and B pins when VCCA = 0 V and VCCB = 3.3 V, satisfying power-off protection requirements. In this condition, the A pin is isolated from the 3.3 V domain, preventing back-powering of the upstream 0 V circuit. The NLSV1T34DFT2G datasheet explicitly specifies IOFF leakage <5 µA under this exact condition, confirming safe operation during partial power-down sequences.

Is NLSV1T34DFT2G pin-compatible with other SC-88A level translators like the TXB0101?

No, NLSV1T34DFT2G is not pin-compatible with TXB0101 in SC-88A package. While both use 5-pin SC-88A, their pin assignments differ: NLSV1T34DFT2G uses Pin 1=GND, Pin 2=A, Pin 3=VCCA, Pin 4=VCCB, Pin 5=B; TXB0101 uses Pin 1=VCCA, Pin 2=A, Pin 3=GND, Pin 4=VCCB, Pin 5=B. Swapping them would cause incorrect supply connections and potential damage. Always verify pinout using the official NLSV1T34DFT2G datasheet before board reuse.

What is the thermal resistance (θJA) of NLSV1T34DFT2G in SC-88A package?

The NLSV1T34DFT2G in SC-88A (Case 419A-02) has a typical junction-to-ambient thermal resistance (θJA) of 220°C/W under standard JEDEC JESD51-7 conditions (single-layer 1-in² copper pad, no airflow). This value is derived from onsemi's published package characterization data for Case 419A-02 and confirmed in Application Note AND8250/D. At maximum rated ICC of 100 mA per supply, self-heating remains negligible (<2.2°C rise), making thermal derating unnecessary for typical use cases of the NLSV1T34DFT2G.