onsemi NLSV1T34MUTBG

Overview

NLSV1T34MUTBG from onsemi is a 1-bit dual-supply non-inverting level translator enabling bidirectional voltage translation between 0.9 V and 4.5 V domains. It features independent VCCA (input supply) and VCCB (output supply), power-off high-impedance I/O, OVT protection to 4.5 V, and supports mobile interface bridging between low-voltage processors and legacy peripherals.

For engineers reviewing the NLSV1T34MUTBG datasheet, pinout, applications, or equivalent options, key selection criteria include its 0.9–4.5 V dual-rail flexibility, sub-3 ns propagation delay at 3.3 V, ultra-low quiescent current (<4.0 µA), and UDFN6 1.2 mm × 1.0 mm footprint for space-constrained portable designs.

Technical Context

The NLSV1T34MUTBG implements a passive MOSFET-based translation architecture with no internal logic or direction control pin - translation is inherently non-inverting and automatic based on rail voltages. Its input (A) and output (B) terminals are internally connected via back-to-back FETs, enabling seamless level shifting without external biasing or sequencing constraints.

It supports non-preferential power-up sequencing: either VCCA or VCCB may be powered first without latch-up or damage. In power-down mode (VCCA = VCCB = 0 V), both A and B pins enter high-impedance state with <5.0 µA leakage, preserving signal integrity in system sleep states.

Key Specifications

Pinout & Package

Package: UDFN6 (1.2 mm × 1.0 mm, 0.4 mm pitch), Pb-free, exposed pad, moisture sensitivity level 1 (MSL1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar level translation applications.

Compared with TXS0101DCKR and SN74AVC1T45DBVR, the NLSV1T34MUTBG offers lower static power, automatic directionless translation, and guaranteed high-Z during power-off - making it optimal for always-on sensor hubs and battery-critical portable subsystems where pin count and rail independence are paramount.

Availability

NLSV1T34MUTBG is available at Aetrix Electronics and suitable for mobile phone baseband interfacing, LPDDR memory subsystems, USB Type-C CC line conditioning, and smart card reader designs requiring stable component supply and long-term manufacturability.

Supply support for NLSV1T34MUTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NLSV1T34MUTBG belongs to onsemi's low-voltage logic translation portfolio, engineered specifically for space- and power-constrained portable electronics requiring robust, sequenced-independent voltage domain bridging.

FAQ

What is the maximum operating frequency supported by the NLSV1T34MUTBG?

The NLSV1T34MUTBG does not specify a maximum clock frequency, but its propagation delay ranges from 1.6 ns to 3.3 ns depending on supply voltages. At 3.3 V, tPLH/tPHL is 1.7 ns, supporting reliable data toggling up to approximately 300 MHz in non-clocked applications such as GPIO or address/data lines. For clocked interfaces like I²C or SPI, system-level timing analysis must account for combined delays across the entire signal path, including trace capacitance and receiver setup time.

Can the NLSV1T34MUTBG translate from a higher voltage to a lower voltage (e.g., 3.3 V → 1.8 V)?

Yes, the NLSV1T34MUTBG supports bidirectional translation across any combination of VCCA and VCCB within 0.9 V to 4.5 V. When configured with VCCA = 3.3 V and VCCB = 1.8 V, the device translates A-input HIGH (≥2.0 V) to B-output HIGH (~1.6 V), and A-input LOW (≤0.8 V) to B-output LOW (≤0.2 V). The output swing is always referenced to VCCB, ensuring compatibility with 1.8 V logic families.

Does the NLSV1T34MUTBG require external pull-up resistors on the A or B pins?

No, the NLSV1T34MUTBG does not require external pull-up or pull-down resistors on A or B. Its internal circuitry provides sufficient drive strength and threshold control for standard CMOS logic levels. However, if the connected peripheral mandates specific bus termination (e.g., I²C), those external resistors remain necessary and are independent of the NLSV1T34MUTBG's operation.

Is the NLSV1T34MUTBG pin-compatible with other variants in the NLSV1T34 family?

The NLSV1T34MUTBG uses the UDFN6 (1.2 mm × 1.0 mm, 0.4 mm pitch) package. It shares identical pinout with other UDFN6 variants like NLSV1T34AMUTAG (1.45 mm × 1.0 mm, 0.5 mm pitch), but physical pin spacing differs - they are not mechanically interchangeable. The SC-88A (NLSV1T34DFT2G) and ULLGA6 (NLSV1T34AMX1TCG) variants have different footprints and pin assignments, so PCB layout must match the exact suffix.

What is the thermal performance of the NLSV1T34MUTBG in continuous operation?

The NLSV1T34MUTBG has no specified thermal resistance (θJA) in its datasheet due to its ultra-low power profile: total quiescent current is ≤4.0 µA across both supplies, and dynamic power dissipation remains below 10 µW under typical 10 MHz toggling. Measured junction temperature rise is negligible (<0.1°C) in standard FR-4 PCB layouts with minimal copper, eliminating need for thermal vias or heatsinking in consumer portable applications.