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Vishay General Semiconductor - Diodes Division NSB8GTHE3_B/I
- Part No.:
- NSB8GTHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NSB8GTHE3_B/I.pdf
- Description:
- DIODE GEN PURP 400V 8A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,453
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Product details
Overview
NSB8GTHE3_B/I from Vishay General Semiconductor is a glass passivated single silicon rectifier diode in D2PAK (TO-263AB) package, rated for 400 V repetitive peak reverse voltage (VRRM), 8.0 A average forward current (IF(AV)), and 125 A non-repetitive surge current (IFSM), with 1.1 V forward voltage drop at 8.0 A - used as freewheeling or output rectifier in DC/DC converters and industrial power supplies.
For engineers reviewing the NSB8GTHE3_B/I datasheet, NSB8GTHE3_B/I pinout, NSB8GTHE3_B/I application, or NSB8GTHE3_B/I equivalent, key selection criteria include its AEC-Q101 qualification, TO-263AB thermal resistance (RθJC = 3.0 °C/W), 150 °C max junction temperature, and RoHS-compliant, halogen-free construction with matte tin-plated leads solderable per J-STD-002.
Technical Context
This device operates as a unidirectional power rectifier with a single PN junction, optimized for high-efficiency AC-to-DC conversion in medium-power applications. Its glass-passivated chip ensures stable reverse leakage (<10 μA at 25 °C, <100 μA at 100 °C) and robust surge tolerance under 8.3 ms half-sine stress.
The D2PAK (TO-263AB) package enables direct heatsink mounting via the exposed cathode tab (Pin 2), supporting continuous conduction mode operation up to 100 °C case temperature. Junction capacitance is 55 pF at 4.0 V / 1 MHz, limiting high-frequency switching use but suitable for 50–100 kHz converter topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 400 V - maximum repetitive reverse blocking capability; defines safe operating voltage margin in rectifier circuits. |
| IF(AV) | 8.0 A at TC = 100 °C - continuous forward current rating with heatsink; determines minimum heatsink sizing. |
| IFSM | 125 A - peak surge withstand for 8.3 ms; critical for inrush and fault-current handling in power supplies. |
| VF | 1.1 V at 8.0 A, 25 °C - forward conduction loss; directly impacts conduction efficiency and thermal design. |
| RθJC | 3.0 °C/W - thermal resistance from junction to case; enables accurate junction temperature estimation under load. |
| TJ max. | 150 °C - maximum allowable junction temperature; sets upper limit for thermal derating curves. |
| IR | 10 μA at 25 °C, 100 μA at 100 °C - reverse leakage current; affects standby power and high-impedance circuit integrity. |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount with isolated anode lead (Pin 1) and electrically exposed cathode tab (Pin 2/K), UL 94 V-0 molding compound, RoHS-compliant and halogen-free (M3 suffix), AEC-Q101 qualified (HM3 variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Input terminal for forward current flow; connects to AC or switching node side of rectification path. |
| Pin 2 / K (Tab) | Cathode | Output terminal and thermal interface; must be soldered to PCB copper pour or heatsink for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enhances long-term reliability and moisture resistance versus epoxy-passivated alternatives; meets J-STD-020 MSL Level 1. |
| AEC-Q101 qualification | Validated for automotive-grade stress testing including temperature cycling, HTRB, and ESD; supports under-hood and ADAS power designs. |
| Low VF (1.1 V @ 8 A) | Reduces conduction losses by ~15% vs. comparable 1.3 V diodes, lowering thermal load and improving system efficiency. |
| High IFSM (125 A) | Withstands repeated line surges and transformer inrush without degradation; eliminates need for external surge clamping in many designs. |
| Halogen-free & RoHS | Complies with IPC-1752A material declaration requirements and EU RoHS Directive 2011/65/EU Annex II. |
Applications
| Industrial DC/DC Converters | Automotive Power Modules |
|---|---|
|
Use Scenario: Output rectification in 24 V–48 V isolated flyback or forward converters powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power rectifier converting transformer secondary AC to regulated DC bus. Use Value: 8.0 A IF(AV) and 3.0 °C/W RθJC enable compact heatsinking; 400 V VRRM provides margin against reflected transients. |
Use Scenario: Freewheeling diode across solenoid drivers in 12 V/24 V automotive body control units. IC Role / Device Role / Timing Role: Clamp inductive kickback during MOSFET turn-off to protect switching FETs. Use Value: AEC-Q101 qualification and 125 A IFSM ensure reliability under repeated load dump and cold-crank conditions. |
| Renewable Energy Inverters | Industrial Motor Drives |
|
Use Scenario: DC link protection and auxiliary supply rectification in string inverters for solar PV systems. IC Role / Device Role / Timing Role: Input-stage bridge rectifier for auxiliary 24 V control supply derived from DC link. Use Value: 150 °C TJ max. and low IR support stable operation in high-ambient rooftop enclosures. |
Use Scenario: Snubber and clamp rectification in VFD gate driver power rails and braking chopper circuits. IC Role / Device Role / Timing Role: Fast recovery freewheeling path for IGBT collector-emitter energy dissipation. Use Value: Glass passivation and 100 μA IR at 100 °C maintain isolation integrity during extended thermal soak testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar general-purpose rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R04DJF | 400 V VRRM, 8 A IF(AV), TO-220AC package, VF = 1.15 V, RθJC = 5.0 °C/W, not AEC-Q101 qualified | Limited to industrial/non-automotive use; requires larger heatsink due to higher thermal resistance | Preferred where cost sensitivity outweighs automotive qualification and thermal performance |
| ON Semi MUR840CT | 400 V VRRM, dual common-cathode configuration, TO-220AB package, VF = 1.25 V, no AEC-Q101 rating | Not pin-compatible; dual-diode topology adds layout complexity for single-diode applications | Consider only when dual-diode functionality is required and board space permits TO-220 footprint |
Compared with STTH8R04DJF and MUR840CT, NSB8GTHE3_B/I delivers superior thermal performance (3.0 vs. 5.0/- °C/W), automotive qualification, and surface-mount compatibility - making it optimal for space-constrained, thermally demanding, or automotive-grade designs where single-diode rectification is required.
Availability
NSB8GTHE3_B/I is available at Aetrix Electronics and suitable for industrial DC/DC converters, automotive power modules, and renewable energy inverters requiring stable component supply, long-lifecycle availability, and traceable sourcing.
Supply support for NSB8GTHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, power efficiency, and automotive-grade validation.
The NSB8xT series targets high-reliability power conversion in automotive and industrial environments, designed specifically for surface-mount rectification where thermal performance, surge robustness, and qualification compliance are critical.
FAQ
What is the maximum junction temperature rating for NSB8GTHE3_B/I?
The NSB8GTHE3_B/I has a maximum junction temperature (TJ max.) of 150 °C, as specified in the Vishay datasheet Document Number 88690. This rating allows operation in high-ambient environments such as engine compartments or enclosed industrial enclosures, provided thermal design maintains junction temperature below this limit using the documented RθJC of 3.0 °C/W and appropriate PCB copper area or heatsinking.
Is NSB8GTHE3_B/I pin-compatible with TO-220AC rectifiers like NS8GT-E3/45?
No, NSB8GTHE3_B/I is not pin-compatible with TO-220AC devices such as NS8GT-E3/45. It uses the D2PAK (TO-263AB) package with two leads and an exposed cathode tab, whereas TO-220AC has three leads and a different mechanical outline. Board redesign is required to migrate from TO-220AC to NSB8GTHE3_B/I due to differing land patterns, mounting holes, and thermal interface geometry.
Does NSB8GTHE3_B/I meet AEC-Q101 requirements?
Yes, NSB8GTHE3_B/I meets AEC-Q101 qualification requirements, as confirmed by the HM3 suffix designation and documentation in Vishay's NS8xT/NSB8xT datasheet (Rev. 17-Aug-2023). This includes stress testing for temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge - validating suitability for automotive power electronics applications.
What is the forward voltage drop of NSB8GTHE3_B/I at rated current?
The NSB8GTHE3_B/I exhibits a maximum instantaneous forward voltage (VF) of 1.1 V at 8.0 A and TJ = 25 °C, per the Electrical Characteristics table in Vishay Document Number 88690. At elevated temperatures (e.g., 100 °C), VF decreases slightly (~1.05 V), which is typical for silicon rectifiers and must be accounted for in worst-case conduction loss calculations.
Can NSB8GTHE3_B/I be used in high-frequency switching applications above 100 kHz?
NSB8GTHE3_B/I is not optimized for high-frequency switching above 100 kHz due to its 55 pF junction capacitance and lack of specified reverse recovery time (trr). It is intended for line-frequency and medium-frequency (≤50–100 kHz) rectification. For >100 kHz applications, fast recovery or ultrafast diodes with documented trr < 50 ns should be selected instead of NSB8GTHE3_B/I.
NSB8GTHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 400 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 8 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 400 V
- Capacitance @ Vr, F:
- 55pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -55°C ~ 150°C
NSB8GTHE3_B/I FAQ
1.How can I place an order for NSB8GTHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for NSB8GTHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSB8GTHE3_B/I reliable?
The price and inventory of NSB8GTHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSB8GTHE3_B/I is usually 5 days.
3.What payment methods are accepted for NSB8GTHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSB8GTHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSB8GTHE3_B/I?
NSB8GTHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSB8GTHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSB8GTHE3_B/I?
For technical support, including NSB8GTHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSB8GTHE3_B/I requirements.
6.How does Aetrix verify that NSB8GTHE3_B/I is sourced from the original manufacturer or authorized distributors?
All NSB8GTHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSB8GTHE3_B/I meets industry standards.
7.What is the process for return or replacement of NSB8GTHE3_B/I?
All NSB8GTHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with NSB8GTHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSB8GTHE3_B/I part is unused and in its original packaging.
Return procedure for NSB8GTHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSB8GTHE3_B/I Tags
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