onsemi NSCT2907ALT1G
- Part No.:
- NSCT2907ALT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NSCT2907ALT1G.pdf
- Description:
- TRANS PNP 60V 0.6A SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:3,460
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Product details
Overview
NSCT2907ALT1G from onsemi is a PNP silicon general-purpose transistor in SOT-23 package, rated for −60 V VCEO, −600 mA IC, and 225 mW power dissipation on FR-5 board. It delivers hFE = 75–300 (at IC = −0.1 to −500 mA), VCE(sat) = −0.4 V (at IC = −150 mA, IB = −15 mA), and fT = 200 MHz - used in low-voltage switching and signal amplification circuits in industrial control modules.
For engineers reviewing the NSCT2907ALT1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT-23 footprint compatibility, guaranteed −60 V breakdown rating, DC current gain across five collector current levels, and Pb-free RoHS-compliant packaging per J-STD-020 reflow profile.
Technical Context
This device operates as a discrete PNP bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for linear amplification and saturated switching. Its thermal resistance RJA = 556 °C/W (FR-5) and 417 °C/W (alumina) defines maximum allowable ambient temperature rise under continuous conduction.
Electrical behavior is characterized by three distinct operating regions: cutoff (ICEO ≤ −50 nA at VCE = −30 V), active (hFE validated from −0.1 mA to −500 mA), and saturation (VCE(sat) ≤ −1.6 V up to −500 mA). Switching performance includes ton ≤ 45 ns and toff ≤ 100 ns under specified test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −60 Vdc - supports rail-to-rail operation in −48 V telecom or −24 V industrial logic interfaces without breakdown. |
| IC (max) | −600 mAdc - enables driving medium-current loads such as LED arrays or relay coils directly from microcontroller GPIOs. |
| hFE | 75–300 - provides stable current amplification across wide collector current range, reducing base drive design margin uncertainty. |
| fT | 200 MHz - ensures usable small-signal gain up to VHF band, suitable for RF pre-driver or broadband amplifier stages. |
| VCE(sat) | −0.4 V (at −150 mA/−15 mA) - minimizes conduction loss and self-heating in high-duty-cycle switching applications. |
| PD (FR-5) | 225 mW - sets absolute thermal limit for PCB-mounted operation without heatsink, requiring layout-aware copper pour planning. |
Pinout & Package
SOT-23 (Case 318, Style 6) surface-mount package with 1.0 mm × 1.4 mm footprint, 0.95 mm height, and gull-wing leads. Lead finish is matte tin over nickel, compatible with standard SnPb and lead-free reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Current-controlled input node | Receives forward-biased base-emitter voltage to initiate minority-carrier injection; requires series resistor to limit IB per hFE target. |
| 2 (Emitter) | Common reference terminal | Connected to higher-potential rail in PNP configuration; carries full load current plus base current; must be low-impedance return path. |
| 3 (Collector) | Output current sink | Delivers controlled current to load tied between supply and collector; voltage swing limited by VCEO and saturation characteristics. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free construction | Meets RoHS Directive 2011/65/EU and J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life. |
| Guaranteed hFE range | Validated minimum/maximum DC current gain across five collector current points ensures predictable biasing in production designs. |
| Low VCE(sat) | −0.4 V at IC/IB = 10 reduces power loss by >40% vs. legacy PNP transistors with >−0.8 V saturation. |
| High fT | 200 MHz bandwidth allows use in analog front-ends up to 30 MHz without external compensation. |
Applications
| Industrial Sensor Interface | LED Driver Circuit |
|---|---|
Use Scenario: Amplifying low-level output from NTC thermistors or Hall-effect sensors in programmable logic controllers. IC Role / Device Role / Timing Role: PNP transistor configured as common-emitter amplifier with fixed bias network to boost sensor signal before ADC sampling. Use Value: hFE stability across −55°C to +125°C ensures consistent gain calibration without software compensation. | Use Scenario: Driving 20–50 mA indicator LEDs from 3.3 V or 5 V microcontroller outputs in HMI panels. IC Role / Device Role / Timing Role: Low-side switch with emitter tied to VCC, collector connected to LED anode, enabling direct GPIO control. Use Value: VCE(sat) ≤ −0.4 V limits LED current droop and maintains brightness uniformity across multiple channels. |
| Relay Driver Stage | Level Translation Circuit |
Use Scenario: Controlling 12 V or 24 V electromagnetic relays in building automation systems. IC Role / Device Role / Timing Role: Saturated switch providing ≥500 mA coil current with fast turn-on (ton ≤ 45 ns) to minimize contact arcing. Use Value: toff ≤ 100 ns and ts ≤ 80 ns reduce relay release delay, critical for safety-critical interlock sequencing. | Use Scenario: Converting 1.8 V or 3.3 V logic signals to −5 V or −12 V levels for legacy analog subsystems. IC Role / Device Role / Timing Role: Inverter stage using emitter-follower or common-base topology to shift voltage domain while preserving edge integrity. Use Value: fT = 200 MHz supports clean 10 MHz clock translation without added propagation delay jitter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT2907ALT1G | Identical electrical specs and SOT-23 package; same onsemi die, differentiated only by marking code and tape/reel orientation. | No functional difference; fully interchangeable in all circuit contexts and PCB layouts. | Select when MMBT2907ALT1G offers better distributor stock availability or pricing. |
| PN2907A | Same VCEO/IC ratings but TO-92 package; hFE min = 100 (vs. 75 for NSCT2907ALT1G); RJA = 200 °C/W (vs. 556 °C/W). | Requires through-hole PCB assembly and larger board area; unsuitable for space-constrained SMT designs. | Choose only for prototyping or low-volume through-hole builds where manual soldering is preferred. |
Compared with MMBT2907ALT1G, NSCT2907ALT1G offers identical performance in identical SOT-23 packaging, while PN2907A trades surface-mount compatibility for higher thermal efficiency and lower hFE variation - making NSCT2907ALT1G optimal for automated high-density production.
Availability
NSCT2907ALT1G is available at Aetrix Electronics and suitable for industrial sensor interfaces, LED driver circuits, relay driver stages, and level translation circuits requiring stable component supply and RoHS-compliant manufacturing.
Supply support for NSCT2907ALT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensor, and connectivity solutions.
The NSCT2907ALT1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-reliability switching and amplification in industrial, automotive, and consumer equipment.
FAQ
What is the maximum operating temperature for NSCT2907ALT1G?
The NSCT2907ALT1G has a specified junction and storage temperature range of −55°C to +150°C. Its thermal resistance RJA is 556 °C/W on FR-5 board, meaning at 25°C ambient, the junction reaches 150°C at ~225 mW dissipation. Derating is required above 25°C at 1.8 mW/°C to maintain reliability. The NSCT2907ALT1G must not exceed 150°C junction temperature during operation.
Is NSCT2907ALT1G pin-compatible with the MMBT2907ALT1G?
Yes - NSCT2907ALT1G and MMBT2907ALT1G share identical SOT-23 pinout (Base-Emitter-Collector on pins 1-2-3), identical electrical specifications, and identical thermal characteristics. They differ only in part marking and tape/reel packaging orientation. The NSCT2907ALT1G can replace MMBT2907ALT1G without any PCB or schematic changes.
What is the typical noise figure of NSCT2907ALT1G at 1 kHz?
The NSCT2907ALT1G exhibits a typical noise figure of 2.0 dB at 1 kHz, VCE = 10 V, and IC = −1.0 mA with optimum source resistance. This value is confirmed in Figure 7 of the official datasheet. For low-noise preamplifier designs, the NSCT2907ALT1G performs comparably to other general-purpose PNP transistors in its class.
Does NSCT2907ALT1G support lead-free reflow soldering?
Yes - NSCT2907ALT1G is explicitly marked "Pb-Free" and qualified per J-STD-020 for lead-free reflow. Its matte tin lead finish withstands peak temperatures up to 260°C for 30 seconds. The NSCT2907ALT1G is compatible with standard SAC305 alloy profiles and meets IPC-A-610 Class 2 acceptability requirements.
Can NSCT2907ALT1G be used in linear amplifier configurations?
Yes - NSCT2907ALT1G is characterized for active-mode operation with hFE specified from −0.1 mA to −500 mA and VCE = −10 V. Its fT = 200 MHz and low Cobo = 8.0 pF support stable mid-band voltage gain. However, the NSCT2907ALT1G is not optimized for ultra-low distortion; use only in non-critical analog stages where ±5% gain tolerance is acceptable.
NSCT2907ALT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 150mA, 10V
- Power - Max:
- 225 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
NSCT2907ALT1G FAQ
1.How can I place an order for NSCT2907ALT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSCT2907ALT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSCT2907ALT1G reliable?
The price and inventory of NSCT2907ALT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSCT2907ALT1G is usually 5 days.
3.What payment methods are accepted for NSCT2907ALT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSCT2907ALT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSCT2907ALT1G?
NSCT2907ALT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSCT2907ALT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSCT2907ALT1G?
For technical support, including NSCT2907ALT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSCT2907ALT1G requirements.
6.How does Aetrix verify that NSCT2907ALT1G is sourced from the original manufacturer or authorized distributors?
All NSCT2907ALT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSCT2907ALT1G meets industry standards.
7.What is the process for return or replacement of NSCT2907ALT1G?
All NSCT2907ALT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSCT2907ALT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSCT2907ALT1G part is unused and in its original packaging.
Return procedure for NSCT2907ALT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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