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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSCT2907ALT3G

Name: NSCT2907ALT3G
Brand: onsemi
SKU: NSCT2907ALT3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSCT2907ALT3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: NSCT2907ALT3G.pdf

Description:: TRANS PNP 60V 0.6A SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,045

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Product details

Overview

NSCT2907ALT3G from onsemi is a PNP silicon general-purpose transistor in SOT-23 package, rated for −60 V V_CEO, −600 mA I_C, and 225 mW power dissipation on FR-5 board. It delivers h_FE = 75–300 (at I_C = −0.1 to −500 mA), V_CE(sat) ≤ −0.4 V (at I_C = −150 mA, I_B = −15 mA), and f_T = 200 MHz - used in low-voltage switching and signal amplification circuits in portable power management.

For engineers reviewing the NSCT2907ALT3G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT-23 footprint compatibility, guaranteed −60 V breakdown rating, and documented 200 MHz f_T performance under defined bias conditions.

Technical Context

This device operates as a discrete bipolar junction transistor with fixed PNP polarity, designed for linear amplification and saturated switching in DC-coupled or low-frequency AC signal paths. Its electrical behavior is defined by base-emitter forward conduction, collector-emitter current control via h_FE, and saturation voltage limits under specified I_C/I_B ratios.

Thermal design relies on validated R_JA = 556 °C/W (FR-5) and 417 °C/W (alumina), with derating slopes of 1.8 mW/°C and 2.4 mW/°C respectively. Junction temperature must remain within −55°C to +150°C across all operating conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 Vdc - maximum allowable collector-emitter voltage before breakdown under open-base condition
I_C (max)	−600 mAdc - continuous collector current limit defining safe DC conduction capacity
h_FE	75–300 - DC current gain range across I_C = −0.1 mA to −500 mA, critical for bias stability
V_CE(sat)	≤ −0.4 V - collector-emitter voltage at I_C = −150 mA / I_B = −15 mA, determines on-state power loss
f_T	200 MHz - unity-gain frequency at I_C = −50 mA, V_CE = −20 V, sets small-signal bandwidth limit
P_D (FR-5)	225 mW @ 25°C - total power dissipation limit on standard PCB material, with 1.8 mW/°C derating

Pinout & Package

SOT-23 (Case 318, Style 6) surface-mount plastic package with gull-wing leads; dimensions: 2.90 mm × 1.30 mm × 0.95 mm (L × W × H); Pb-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for injecting base current to enable collector-emitter conduction
2	Emitter	Current source terminal for PNP operation; connected to higher potential in typical biasing
3	Collector	Current sink terminal; carries load current when device is active or saturated

Key Features

Feature	Design Value
Pb-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; no lead content in terminations or die attach
High f_T	200 MHz gain-bandwidth product enables stable amplification up to ~50 MHz in common-emitter configurations
Low V_CE(sat)	−0.4 V at I_C/I_B = 10 reduces conduction loss in battery-powered switch applications
Wide h_FE range	75–300 supports consistent gain across production lots without binning for moderate-precision analog stages

Applications

Portable DC-DC Converter Control	LED Driver Switch
Use Scenario: Driving gate of external MOSFET or controlling feedback loop in step-down regulators with 3–5 V input rails. IC Role / Device Role / Timing Role: PNP switch enabling high-side current sourcing for reference voltage or error amplifier bias networks. Use Value: −600 mA I_C rating and −0.4 V V_CE(sat) minimize dropout and thermal rise in compact regulator footprints.	Use Scenario: On/off control of indicator or status LEDs in handheld medical devices and wearables. IC Role / Device Role / Timing Role: Low-power saturated switch sinking LED current through emitter-to-ground path. Use Value: Verified −5.0 V V_EBO and −60 V V_CEO provide margin against transient overvoltage in unregulated supply environments.
Audio Signal Amplifier Stage	Industrial Sensor Interface
Use Scenario: First-stage preamplifier for electret microphone outputs in voice-recognition modules. IC Role / Device Role / Timing Role: Common-emitter amplifier with fixed bias network delivering 20–30 dB voltage gain. Use Value: 200 MHz f_T ensures flat response up to 20 kHz with <1% distortion at I_C = −1 mA.	Use Scenario: Level-shifting and buffering of analog sensor outputs (e.g., thermistor, RTD) into ADC front-ends. IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-output-impedance drive without inversion. Use Value: h_FE ≥ 75 at I_C = −0.1 mA ensures stable bias current delivery across −40°C to +85°C ambient.

Portable DC-DC Converter Control

LED Driver Switch

Use Scenario: Driving gate of external MOSFET or controlling feedback loop in step-down regulators with 3–5 V input rails.

IC Role / Device Role / Timing Role: PNP switch enabling high-side current sourcing for reference voltage or error amplifier bias networks.

Use Value: −600 mA I_C rating and −0.4 V V_CE(sat) minimize dropout and thermal rise in compact regulator footprints.

Use Scenario: On/off control of indicator or status LEDs in handheld medical devices and wearables.

IC Role / Device Role / Timing Role: Low-power saturated switch sinking LED current through emitter-to-ground path.

Use Value: Verified −5.0 V V_EBO and −60 V V_CEO provide margin against transient overvoltage in unregulated supply environments.

Audio Signal Amplifier Stage

Industrial Sensor Interface

Use Scenario: First-stage preamplifier for electret microphone outputs in voice-recognition modules.

IC Role / Device Role / Timing Role: Common-emitter amplifier with fixed bias network delivering 20–30 dB voltage gain.

Use Value: 200 MHz f_T ensures flat response up to 20 kHz with <1% distortion at I_C = −1 mA.

Use Scenario: Level-shifting and buffering of analog sensor outputs (e.g., thermistor, RTD) into ADC front-ends.

IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-output-impedance drive without inversion.

Use Value: h_FE ≥ 75 at I_C = −0.1 mA ensures stable bias current delivery across −40°C to +85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT2907ALT1G	Identical electrical specs and SOT-23 package; differs only in date code marking and tape/reel packaging configuration (3000 vs 10,000 units per reel)	No functional difference; suitable for same circuit roles including switching and amplification	Select based on volume requirements and logistics preference - both meet identical onsemi specification NSCT2907A
PN2907A	Same die but TO-92 package (larger footprint, higher R_JA = 200°C/W), lower max I_C = −600 mA (same rating) but reduced f_T = 100 MHz	Not suitable for space-constrained SMT designs; better thermal performance in free-air but incompatible with automated SMT assembly	Choose NSCT2907ALT3G for SMT production; PN2907A only where through-hole mounting or higher single-pulse power handling is required

Compared with MMBT2907ALT1G and PN2907A, the NSCT2907ALT3G provides identical core transistor performance in the industry-standard SOT-23 footprint, enabling direct placement in high-density layouts while maintaining full compatibility with existing 2907A-based schematics and thermal models.

Availability

NSCT2907ALT3G is available at Aetrix Electronics and suitable for portable DC-DC converter control, LED driver switching, and audio signal amplification requiring stable component supply across industrial and consumer electronics programs.

Supply support for NSCT2907ALT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The NSCT2907ALT3G belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable low-voltage switching and amplification in cost-sensitive, high-volume consumer and industrial systems.

FAQ

What is the maximum collector-emitter voltage rating for NSCT2907ALT3G?

The NSCT2907ALT3G has a maximum collector-emitter voltage rating of −60 Vdc, specified as V_(BR)CEO under test condition I_C = −10 mAdc with base open. This rating applies across the full operating temperature range and defines the absolute upper limit for safe DC voltage stress between collector and emitter terminals in the NSCT2907ALT3G.

Is NSCT2907ALT3G compatible with lead-free reflow soldering processes?

Yes, the NSCT2907ALT3G is explicitly marked as Pb-free in its ordering information and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard reflow profiles. Its SOT-23 package is qualified for peak reflow temperatures up to 260°C, and the device meets RoHS Directive 2011/65/EU without exemption.

What is the typical DC current gain (hFE) of NSCT2907ALT3G at 150 mA collector current?

At I_C = −150 mAdc and V_CE = −10 Vdc, the NSCT2907ALT3G exhibits a minimum h_FE of 100 and a maximum of 300, per the Electrical Characteristics table. This gain range ensures predictable biasing in switching applications where I_C/I_B = 10 is commonly used - directly supporting the −0.4 V V_CE(sat) specification for the NSCT2907ALT3G.

Does NSCT2907ALT3G have a specified noise figure for small-signal amplification?

No, the NSCT2907ALT3G datasheet does not specify a noise figure (NF). While Figure 7 shows typical NF curves for related 2907A variants at I_C = −50 µA to −1 mA, those plots are labeled for "NSCT2907A" without part-specific validation. The NSCT2907ALT3G datasheet omits NF values in its Electrical Characteristics table and does not guarantee noise performance - use only in non-critical low-noise applications or validate empirically.

Can NSCT2907ALT3G replace PN2907A in existing designs?

The NSCT2907ALT3G shares identical electrical parameters with the PN2907A but uses an SOT-23 package instead of TO-92. Direct replacement requires PCB layout modification due to different footprint, pad geometry, and thermal path. While electrical behavior matches, mechanical fit and thermal resistance (R_JA = 556 °C/W vs 200 °C/W) differ significantly - redesign verification is mandatory before substituting NSCT2907ALT3G for PN2907A.

NSCT2907ALT3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max):: 10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 225 mW

Frequency - Transition:: 200MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

NSCT2907ALT3G FAQ

1.How can I place an order for NSCT2907ALT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSCT2907ALT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSCT2907ALT3G reliable?

The price and inventory of NSCT2907ALT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSCT2907ALT3G is usually 5 days.

3.What payment methods are accepted for NSCT2907ALT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSCT2907ALT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSCT2907ALT3G?

NSCT2907ALT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSCT2907ALT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSCT2907ALT3G?

For technical support, including NSCT2907ALT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSCT2907ALT3G requirements.

6.How does Aetrix verify that NSCT2907ALT3G is sourced from the original manufacturer or authorized distributors?

All NSCT2907ALT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSCT2907ALT3G meets industry standards.

7.What is the process for return or replacement of NSCT2907ALT3G?

All NSCT2907ALT3G units undergo pre-shipment inspection (PSI). If there is an issue with NSCT2907ALT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSCT2907ALT3G part is unused and in its original packaging.

Return procedure for NSCT2907ALT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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