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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSCT3906LT3G

Name: NSCT3906LT3G
Brand: onsemi
SKU: NSCT3906LT3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSCT3906LT3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: NSCT3906LT3G.pdf

Description:: TRANS PNP 40V 0.2A SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,347

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Product details

Overview

NSCT3906LT3G from onsemi is a PNP silicon general-purpose transistor in SOT-23 package, rated for −40 V V_CEO, −200 mA I_C, and 225 mW power dissipation on FR-5 board at 25°C, commonly used in low-power switching and amplification circuits in consumer and industrial signal conditioning.

For engineers reviewing the NSCT3906LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include verified DC current gain (H_FE = 60–300 across I_C = −0.1 to −100 mA), V_CE(sat) ≤ −0.4 V at −50 mA/−5 mA, f_T = 250 MHz, and Pb-free SOT-23 thermal performance (R_JA = 556°C/W).

Technical Context

This device operates as a discrete PNP bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for linear amplification and saturated switching. Its H_FE variation (60–300) and low V_BE(sat) (−0.65 to −0.95 V) support stable biasing across −55°C to +150°C junction temperature range.

Small-signal parameters-including h_fe = 100–400, C_ibo ≤ 10 pF, C_obo ≤ 4.5 pF, and NF ≤ 4.0 dB at 1 kHz-enable predictable audio and low-frequency analog design without external compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−40 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions
I_C	−200 mA - Continuous collector current limit defining maximum load drive capability
P_D (FR-5)	225 mW - Power dissipation limit on standard PCB; derates 1.8 mW/°C above 25°C
H_FE	60–300 - DC current gain range across operating currents, enabling predictable base drive sizing
f_T	250 MHz - Transition frequency indicating usable bandwidth for RF and fast-switching applications
V_CE(sat)	≤ −0.4 V - Low saturation voltage at −50 mA/−5 mA ensures minimal conduction loss in switch mode
NF	≤ 4.0 dB - Noise figure at 1 kHz and 100 µA supports low-noise preamplifier stages

Pinout & Package

SOT-23 (Case 318, Style 6) surface-mount package with 1.0 mm × 1.4 mm footprint, 0.95 mm height, and gull-wing leads; optimized for automated placement and reflow soldering on high-density PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires −1.0 mA base current to saturate at −10 mA collector load
2	Emitter	Current source terminal; connected to higher potential rail in PNP switching configurations
3	Collector	Output terminal; sinks current to ground or lower-potential node when active

Key Features

Feature	Design Value
Pb-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609 Category 1a marking
Wide operating temperature	−55°C to +150°C junction range enables use in automotive under-hood and industrial control environments
Low leakage	I_CEX ≤ −50 nA and I_BL ≤ −50 nA ensure stable off-state behavior in battery-powered systems
High f_T/low C_obo	250 MHz f_T with ≤4.5 pF output capacitance supports clean square-wave switching up to ~30 MHz

Applications

LED Driver Circuit	Level-Shifting Interface
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins with inverted logic. IC Role / Device Role / Timing Role: PNP switch sinking LED current to ground while isolating MCU I/O from load transients. Use Value: V_CE(sat) ≤ −0.25 V at −10 mA/−1 mA ensures >95% LED forward voltage utilization and <5 mW dissipation.	Use Scenario: Translating 5 V TTL logic signals down to 3.3 V CMOS input levels in mixed-voltage digital systems. IC Role / Device Role / Timing Role: Active pull-up stage providing bidirectional level translation with sub-35 ns rise/fall times. Use Value: t_r/t_f ≤ 35 ns and h_fe ≥ 100 enable reliable 10 MHz data transfer without added propagation delay.
Audio Preamp Stage	Power Supply Enable Switch
Use Scenario: Low-noise microphone preamplifier input stage in portable voice recorders and IoT sensors. IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration for gain stability and noise optimization. Use Value: NF ≤ 4.0 dB at 1 kHz and I_C = 100 µA minimizes signal degradation in 20 Hz–20 kHz audio band.	Use Scenario: Enabling/disabling 12 V auxiliary rails in programmable power supplies using 3.3 V FPGA control outputs. IC Role / Device Role / Timing Role: High-side enable switch controlling PMOS gate drive via emitter-follower configuration. Use Value: V_EB rating of −5.0 V and I_C = −200 mA support robust 12 V rail sequencing with <100 µs turn-on delay.

LED Driver Circuit

Level-Shifting Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins with inverted logic.

IC Role / Device Role / Timing Role: PNP switch sinking LED current to ground while isolating MCU I/O from load transients.

Use Value: V_CE(sat) ≤ −0.25 V at −10 mA/−1 mA ensures >95% LED forward voltage utilization and <5 mW dissipation.

Use Scenario: Translating 5 V TTL logic signals down to 3.3 V CMOS input levels in mixed-voltage digital systems.

IC Role / Device Role / Timing Role: Active pull-up stage providing bidirectional level translation with sub-35 ns rise/fall times.

Use Value: t_r/t_f ≤ 35 ns and h_fe ≥ 100 enable reliable 10 MHz data transfer without added propagation delay.

Audio Preamp Stage

Power Supply Enable Switch

Use Scenario: Low-noise microphone preamplifier input stage in portable voice recorders and IoT sensors.

IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration for gain stability and noise optimization.

Use Value: NF ≤ 4.0 dB at 1 kHz and I_C = 100 µA minimizes signal degradation in 20 Hz–20 kHz audio band.

Use Scenario: Enabling/disabling 12 V auxiliary rails in programmable power supplies using 3.3 V FPGA control outputs.

IC Role / Device Role / Timing Role: High-side enable switch controlling PMOS gate drive via emitter-follower configuration.

Use Value: V_EB rating of −5.0 V and I_C = −200 mA support robust 12 V rail sequencing with <100 µs turn-on delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	Identical electrical specs and SOT-23 package; same onsemi die, differentiated only by tape-and-reel quantity (3,000 vs. 10,000 units)	No functional difference; suitable for identical circuit roles and layout	Select NSCT3906LT3G for high-volume production requiring 10,000-unit reels
PN2907A	TO-92 through-hole package; V_CEO = −60 V, I_C = −600 mA, but lower f_T (≈100 MHz) and larger R_JA (200°C/W)	Requires PCB redesign; better for high-current, low-frequency, manual-assembled prototypes	Choose PN2907A only when through-hole mounting or higher voltage margin is mandatory

Compared with MMBT3906LT1G, NSCT3906LT3G offers identical performance in a larger reel format for automated assembly; versus PN2907A, it trades package form factor and voltage headroom for superior high-frequency response and surface-mount compatibility.

Availability

NSCT3906LT3G is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, audio preamp stages, and power supply enable switches requiring stable component supply and RoHS-compliant sourcing.

Supply support for NSCT3906LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power and sensing solutions for automotive, industrial, cloud, and IoT applications.

The NSCT3906LT3G belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, high-reliability discrete switching and amplification in space-constrained consumer and industrial electronics.

FAQ

What is the maximum junction temperature rating for NSCT3906LT3G?

The NSCT3906LT3G has a specified junction and storage temperature range of −55°C to +150°C. This allows operation in harsh environments such as automotive engine compartments or industrial motor controls. Thermal design must ensure that actual junction temperature stays within this limit under worst-case power dissipation and ambient conditions, using the given R_JA = 556°C/W on FR-5 board.

Is NSCT3906LT3G pin-compatible with MMBT3906LT1G?

Yes, NSCT3906LT3G is pin-compatible with MMBT3906LT1G - both use identical SOT-23 (Case 318, Style 6) packaging with Base on Pin 1, Emitter on Pin 2, and Collector on Pin 3. Electrical characteristics are fully aligned per onsemi documentation, making them interchangeable in existing layouts without modification.

What is the typical DC current gain (H_FE) of NSCT3906LT3G at −10 mA collector current?

At I_C = −10 mA and V_CE = −1.0 Vdc, the NSCT3906LT3G exhibits a typical DC current gain (H_FE) of 100, with a guaranteed minimum of 60 and maximum of 300. This wide gain spread necessitates design margining in critical bias networks but supports flexible base resistor selection across production lots.

Does NSCT3906LT3G support high-speed switching applications?

Yes, NSCT3906LT3G supports high-speed switching with documented t_d ≤ 35 ns, t_r ≤ 35 ns, t_s ≤ 225 ns, and t_f ≤ 75 ns under standard test conditions (V_CC = −3.0 V, I_C = −10 mA). Its 250 MHz f_T and low capacitances (C_ibo ≤ 10 pF, C_obo ≤ 4.5 pF) further confirm suitability for digital logic interfacing up to ~30 MHz.

What is the thermal resistance (R_JA) of NSCT3906LT3G on an alumina substrate?

When mounted on a 0.4″ × 0.3″ × 0.024″ 99.5% alumina substrate, the NSCT3906LT3G achieves a thermal resistance of R_JA = 417°C/W at 25°C ambient. This represents a 25% improvement over its FR-5 board rating (556°C/W), enabling higher continuous power handling in thermally managed modules or hybrid circuits.

NSCT3906LT3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 10mA, 1V

Power - Max:: 225 mW

Frequency - Transition:: 250MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

NSCT3906LT3G FAQ

1.How can I place an order for NSCT3906LT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSCT3906LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSCT3906LT3G reliable?

The price and inventory of NSCT3906LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSCT3906LT3G is usually 5 days.

3.What payment methods are accepted for NSCT3906LT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSCT3906LT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSCT3906LT3G?

NSCT3906LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSCT3906LT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSCT3906LT3G?

For technical support, including NSCT3906LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSCT3906LT3G requirements.

6.How does Aetrix verify that NSCT3906LT3G is sourced from the original manufacturer or authorized distributors?

All NSCT3906LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSCT3906LT3G meets industry standards.

7.What is the process for return or replacement of NSCT3906LT3G?

All NSCT3906LT3G units undergo pre-shipment inspection (PSI). If there is an issue with NSCT3906LT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSCT3906LT3G part is unused and in its original packaging.

Return procedure for NSCT3906LT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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