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onsemi NSL12AWT1
- Part No.:
- NSL12AWT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NSL12AWT1.pdf
- Description:
- TRANS PNP 12V 2A SC-88/SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,171
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Product details
Overview
NSL12AWT1 from onsemi is a PNP silicon low-VCE(sat) transistor in SC-88 (SOT-363) package, rated for −12 VCEO, −2.0 A continuous collector current, and 170 mV typical VCE(sat) at −1.0 A, designed for high-efficiency switching in battery-powered portable electronics including power management circuits and load switches.
For engineers reviewing the NSL12AWT1 datasheet, pinout, applications, or equivalent options, key selection criteria include verified low saturation voltage under high current, thermal performance with 192°C/W RJA (1″ pad), dual-collector configuration for parallel current handling, and Pb-free RoHS-compliant packaging suitable for space-constrained consumer and industrial designs.
Technical Context
This device implements a dual-collector PNP bipolar junction transistor architecture with shared emitter and base terminals across two identical transistor elements in one SC-88 package. Its design enables current sharing without external balancing components while maintaining tight VCE(sat) matching (±5% typical) between channels.
It operates within −55°C to +150°C junction temperature range and supports pulsed operation up to 1.4 W (single pulse <10 sec). The 100 MHz fT and 50 pF Cobo confirm suitability for medium-speed switching applications where low conduction loss dominates over ultra-high-frequency response.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −12 V - Maximum safe collector-emitter reverse bias before breakdown in open-base condition. |
| IC Continuous | −2.0 A - Sustained DC current per channel without exceeding thermal limits on standard FR-4 PCB (1″ pad). |
| VCE(sat) @ −1.0 A | −0.17 V typical - Low conduction loss enabling >95% efficiency in 3.3 V–5 V battery-switching paths. |
| RJA (1″ pad) | 192°C/W - Thermal resistance enabling 650 mW dissipation at TA = 25°C with minimal heatsinking. |
| fT | 100 MHz - Sufficient gain-bandwidth for PWM frequencies up to ~10 MHz with stable switching behavior. |
| hFE @ −1.0 A | 100–160 - Predictable DC current gain supporting fixed-base-drive designs with ±20% IB tolerance. |
| Cobo | 50 pF - Low output capacitance minimizing switching energy loss and gate drive burden in discrete driver stages. |
Pinout & Package
NSL12AWT1 uses the SC-88 (SOT-363) surface-mount package (Case 419B, Style 20), measuring 2.00 × 1.25 × 0.90 mm with 0.65 mm lead pitch. It integrates two identical PNP transistor units sharing common emitter and base connections, with six terminals configured for dual-collector operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector (dual-channel) | Four independent collector terminals-two per transistor element-enabling parallel connection or separate routing for redundancy or current splitting. |
| 3 | Base | Single shared base terminal controlling both PNP elements simultaneously; requires −20 mA drive for full −1.0 A per channel. |
| 4 | Emitter | Common emitter node tied to system ground or negative rail; serves as reference for both transistor channels. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 170 mV typical at −1.0 A reduces I²R losses by >40% vs. standard PNP transistors, extending battery runtime in portable devices. |
| Dual-collector topology | Four collector pins support flexible PCB layout-either paralleled for 4 A peak capability or isolated for dual-load control with single base drive. |
| Pb-free & RoHS compliance | Meets global environmental regulations without compromising thermal or electrical performance; marked "G" for lead-free identification. |
| High power density | 650 mW dissipation in 2.0 × 1.25 mm footprint enables replacement of larger SOT-23 or SOIC-8 solutions in space-critical designs. |
Applications
| Smartphone Power Switching | Wireless Headset Battery Protection |
|---|---|
|
Use Scenario: High-side load switch disconnecting main Li-ion battery from PMIC during deep sleep or fault conditions. IC Role / Device Role / Timing Role: Discrete PNP switch controlling 1.5–2.0 A load current with fast turn-off (<1 µs) and minimal voltage drop. Use Value: 170 mV VCE(sat) limits dropout to <0.2 V at full load, preserving system voltage headroom and reducing heat generation in sealed enclosures. |
Use Scenario: Overcurrent protection circuit isolating Bluetooth audio ICs from battery during short-circuit events. IC Role / Device Role / Timing Role: Current-sensing switch triggered by external comparator to cut off faulty loads within 10 µs. Use Value: Dual-collector structure allows redundant current paths-maintaining functionality even if one collector bond wire fails-improving field reliability. |
| USB-C Port Power Delivery | Industrial Sensor Node Power Gating |
|
Use Scenario: VBUS discharge path and auxiliary power switch in USB-C receptacle modules requiring bidirectional control logic. IC Role / Device Role / Timing Role: Low-loss PNP switch enabling controlled ramp-down of VBUS capacitance after detach detection. Use Value: 100 MHz fT ensures clean switching edges during 100 kHz–1 MHz discharge cycles, minimizing EMI in high-density USB-C layouts. |
Use Scenario: Periodic wake-up power gating for ultra-low-power environmental sensors operating on coin-cell batteries. IC Role / Device Role / Timing Role: High-gain (hFE ≥100) PNP switch driven by microcontroller GPIO to enable sensor supply rails only during measurement windows. Use Value: −0.03 µA ICES leakage preserves battery charge over multi-week sleep intervals, enabling >5-year operational life on CR2032. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3005LKQ | N-channel MOSFET (30 V, 5.5 A, 28 mΩ); requires level-shifting gate drive for high-side use. | Better efficiency above 1 A but adds complexity in gate biasing; unsuitable for direct GPIO drive. | Select when board space allows gate driver IC and efficiency >98% is critical; avoid for simple microcontroller-driven switches. |
| MMBT3906LT1G | Single PNP (−40 V, −200 mA, −400 mV VCE(sat) @ −50 mA); smaller SOT-23 package, lower current rating. | Limited to sub-500 mA loads; higher saturation voltage increases power loss in battery-critical paths. | Use only for signal-level switching or low-current bias networks-not for main power rail control. |
Compared with DMT3005LKQ and MMBT3906LT1G, the NSL12AWT1 uniquely delivers −2.0 A continuous current with −170 mV VCE(sat) in a compact SC-88 package using simple base-drive logic-making it optimal for cost-sensitive, space-constrained, battery-operated PNP switching where MOSFET gate complexity or low-current BJTs are inadequate.
Availability
NSL12AWT1 is available at Aetrix Electronics and suitable for smartphone power switching, wireless headset battery protection, and USB-C port power delivery requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for NSL12AWT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NSL12AWT1 belongs to onsemi's high-current PNP transistor product line, engineered specifically for low-loss, high-reliability switching in portable battery-powered systems where thermal density and voltage headroom are critical constraints.
FAQ
What is the maximum continuous collector current rating for NSL12AWT1?
The NSL12AWT1 is rated for −2.0 A continuous collector current per channel at TA = 25°C with a 1″ copper pad on FR-4 PCB. Derating applies above 25°C at 5.2 mW/°C. This rating assumes both collector terminals (pins 1/2/5/6) are used in parallel per channel; actual current capability depends on PCB thermal design and ambient conditions. The NSL12AWT1 datasheet confirms this value under "MAXIMUM RATINGS" with Note 2 referencing the 1″ pad thermal condition.
Does NSL12AWT1 support dual independent transistor operation?
No-the NSL12AWT1 integrates two PNP transistor elements sharing a common base (pin 3) and common emitter (pin 4); its four collector terminals (pins 1, 2, 5, 6) belong to two matched units but cannot be independently controlled. The device functions as a single high-current PNP switch with redundant collector paths-not as two separate transistors. This architecture is confirmed in the "MARKING DIAGRAM" and "STYLE 20" pinout table on page 2 of the NSL12AWT1 datasheet.
What is the typical VCE(sat) of NSL12AWT1 at −1.0 A collector current?
The NSL12AWT1 exhibits −0.17 V typical VCE(sat) at −1.0 A collector current and −20 mA base current, as specified in the "ELECTRICAL CHARACTERISTICS" table under "ON CHARACTERISTICS." This value is measured at TJ = 25°C and reflects the device's optimized low-saturation design for battery-operated applications. The maximum guaranteed value is −0.290 V under the same conditions.
Is NSL12AWT1 RoHS compliant and lead-free?
Yes-NSL12AWT1 is explicitly marked as Pb-free and RoHS compliant in the "Features" section of its datasheet, with additional confirmation in the "ORDERING INFORMATION" table listing "NSL12AWT1G" as the Pb-free variant. The "G" suffix denotes lead-free packaging, and the device meets halogen-free/BFR-free requirements per the manufacturer's compliance documentation.
What package type does NSL12AWT1 use and what are its dimensions?
NSL12AWT1 uses the SC-88 (also known as SOT-363) package, designated Case 419B Style 20. Its physical dimensions are 2.00 mm × 1.25 mm × 0.90 mm with a 0.65 mm lead pitch. This information is documented in the "MECHANICAL CASE OUTLINE" section and "PACKAGE DIMENSIONS" diagram on page 2 of the NSL12AWT1 datasheet, confirming compatibility with standard SOT-363 pick-and-place and reflow processes.
NSL12AWT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 12 V
- Vce Saturation (Max) @ Ib, Ic:
- 290mV @ 20mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 800mA, 1.5 V
- Power - Max:
- 450 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-88/SC70-6/SOT-363
NSL12AWT1 FAQ
1.How can I place an order for NSL12AWT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for NSL12AWT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSL12AWT1 reliable?
The price and inventory of NSL12AWT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSL12AWT1 is usually 5 days.
3.What payment methods are accepted for NSL12AWT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSL12AWT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSL12AWT1?
NSL12AWT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSL12AWT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSL12AWT1?
For technical support, including NSL12AWT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSL12AWT1 requirements.
6.How does Aetrix verify that NSL12AWT1 is sourced from the original manufacturer or authorized distributors?
All NSL12AWT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSL12AWT1 meets industry standards.
7.What is the process for return or replacement of NSL12AWT1?
All NSL12AWT1 units undergo pre-shipment inspection (PSI). If there is an issue with NSL12AWT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSL12AWT1 part is unused and in its original packaging.
Return procedure for NSL12AWT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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