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onsemi NSL12AWT1G
- Part No.:
- NSL12AWT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NSL12AWT1G.pdf
- Description:
- TRANS PNP 12V 2A SC-88/SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,922
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Product details
Overview
NSL12AWT1G from onsemi is a PNP silicon low-VCE(sat) transistor in SOT-363 (SC-88) package, rated for −12 VCEO, −2.0 A continuous collector current, and 170 mV typical VCE(sat) at −1.0 A. It delivers high current capability (−3.0 A peak), 650 mW power handling with 1″ pad layout, and supports battery-operated load switching in portable electronics.
For engineers reviewing the NSL12AWT1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified low saturation voltage under high-current drive, thermal resistance (RJL = 105 °C/W), ESD robustness (HBM Class 3), and Pb-free RoHS-compliant packaging for space-constrained, energy-sensitive designs.
Technical Context
This device operates as a medium-power PNP switching transistor optimized for battery-powered systems requiring low conduction loss and compact footprint. Its −12 VCEO rating and −5.0 VEBO support operation in 9–12 V rail environments with reverse-biased base-emitter protection.
The NSL12AWT1G features pulsed safe operating area up to 1.4 W (single pulse <10 sec), fT = 100 MHz for moderate-speed switching, and dual-collector configuration (pins 1,2,5,6) enabling parallel current paths without external paralleling components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −12 V - Supports reliable switching in 9–12 V battery systems with margin against transients. |
| IC (continuous) | −2.0 A - Enables direct drive of medium-current loads (e.g., LED banks, solenoids) without external current amplification. |
| VCE(sat) @ −1.0 A | −0.17 V typical - Reduces conduction loss to ≤170 mW per transistor, extending battery runtime. |
| PD (1″ pad) | 650 mW - Achievable with standard FR-4 PCB layout; enables higher power density than minimal-pad variant (450 mW). |
| RJL | 105 °C/W - Low junction-to-lead thermal resistance improves heat transfer to PCB copper, supporting sustained high-current operation. |
| fT | 100 MHz - Suitable for PWM switching up to ~10 MHz with acceptable gain roll-off; not intended for RF amplification. |
| ESD Rating | HBM Class 3 (>8 kV), MM Class C - Robust enough for manual assembly and board-level handling without special ESD controls. |
Pinout & Package
SOT-363 (SC-88) package, 2.00 × 1.25 × 0.90 mm, 0.65 mm pitch, Pb-free and RoHS compliant. Six-terminal surface-mount package with dual-collector configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Four parallel collector terminals reduce effective bond wire resistance and improve current sharing; enables ≥−3.0 A peak handling without derating. |
| 3 | Base | Single base connection for unified drive; requires −20 mA base current to saturate at −1.0 A collector current. |
| 4 | Emitter | Common emitter node; connects to positive rail in high-side switch configurations or ground return in low-side sink applications. |
Key Features
| Feature | Design Value |
|---|---|
| High current capability | −3.0 A peak collector current supported by quad-collector terminal layout and 650 mW dissipation on 1″ pad. |
| Low VCE(sat) | −0.17 V typical at −1.0 A ensures <170 mW conduction loss, critical for battery life in always-on portable devices. |
| Thermal performance | RJL = 105 °C/W enables efficient heat transfer to PCB copper, allowing sustained −2.0 A operation with modest heatsinking. |
| ESD robustness | HBM Class 3 (≥8 kV) eliminates need for external ESD protection in handheld product front-end circuits. |
| Pb-free & RoHS | Meets global environmental compliance requirements without sacrificing thermal or electrical performance. |
Applications
| Portable Power Switching | LED Backlight Control |
|---|---|
|
Use Scenario: High-side load switch for 9–12 V Li-ion battery packs powering motor drivers or sensors in handheld test equipment. IC Role / Device Role / Timing Role: PNP transistor configured as saturated switch controlling power delivery to downstream circuitry. Use Value: −0.17 V VCE(sat) minimizes voltage drop across switch, preserving >98% of battery voltage at −1.0 A load current. |
Use Scenario: Constant-current sink for white LED strings in medical diagnostic handheld displays. IC Role / Device Role / Timing Role: Low-saturation BJT used in linear LED current regulation with analog dimming control. Use Value: 100 MHz fT supports PWM dimming frequencies up to 10 MHz without gain degradation, ensuring flicker-free brightness control. |
| Industrial Sensor Interface | Automotive Body Control |
|
Use Scenario: 24 V tolerant input stage for industrial 4–20 mA loop-powered sensors using level-shifted biasing. IC Role / Device Role / Timing Role: PNP switch isolating sensor signal path during fault conditions or power sequencing. Use Value: −12 VCEO and −5.0 VEBO ratings allow safe operation with reverse-polarity protection and transient clamping. |
Use Scenario: Load driver for interior lighting modules in 12 V automotive body control units (BCUs). IC Role / Device Role / Timing Role: Medium-power discrete switch replacing integrated high-side drivers where cost and thermal isolation are prioritized. Use Value: Dual-collector pins (1,2,5,6) reduce contact resistance, lowering temperature rise by ~15 °C vs. single-collector equivalents at −2.0 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3906LT1G | Lower IC (−200 mA), higher VCE(sat) (−300 mV @ −50 mA), SOT-23 package | Not suitable for >−500 mA loads; limited to signal-level switching or bias networks | Select only for low-current logic interface or biasing where thermal constraints preclude larger packages. |
| PN2907A | TO-92 through-hole, −600 mA IC, −1.6 V VCE(sat) @ −500 mA, no ESD rating | Requires PCB real estate and wave soldering; unsuitable for automated SMT production or portable devices | Choose only for legacy through-hole designs or prototyping where rework tolerance outweighs size and efficiency needs. |
Compared with MMBT3906LT1G and PN2907A, the NSL12AWT1G uniquely combines −2.0 A continuous current, −0.17 V VCE(sat), quad-collector SOT-363 packaging, and HBM Class 3 ESD - making it the only option among the three qualified for high-efficiency, high-density, production-ready battery-switching applications.
Availability
NSL12AWT1G is available at Aetrix Electronics and suitable for portable power switching, LED backlight control, and industrial sensor interface applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for NSL12AWT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensing, and connectivity solutions.
The NSL12AWT1G belongs to onsemi's high-current discrete transistor family engineered specifically for battery-operated portable and industrial equipment demanding low-loss, compact, and robust switching performance.
FAQ
What is the maximum continuous collector current rating for the NSL12AWT1G?
The NSL12AWT1G is rated for −2.0 A continuous collector current at TA = 25°C with a 1″ pad layout on FR-4 PCB. Derating applies above 25°C at 5.2 mW/°C. This rating assumes proper thermal management via copper pour and is validated per the datasheet's "PD (Note 2)" condition.
Does the NSL12AWT1G support high-speed switching applications?
The NSL12AWT1G has an fT of 100 MHz, making it suitable for moderate-speed switching up to ~10 MHz PWM operation. However, it is not optimized for RF amplification or nanosecond-edge digital logic; its design emphasizes low VCE(sat) and thermal performance over ultra-fast transition times.
How many collector terminals does the NSL12AWT1G have, and why?
The NSL12AWT1G has four collector terminals (pins 1, 2, 5, and 6) in its SOT-363 package. This quad-collector configuration reduces effective bond wire resistance and improves current sharing, enabling −3.0 A peak current handling and lower thermal impedance compared to single-collector alternatives.
Is the NSL12AWT1G RoHS compliant and lead-free?
Yes, the NSL12AWT1G is Pb-free, halogen-free/BFR-free, and fully RoHS compliant as confirmed in the official onsemi datasheet (Rev. 3, October 2009). The "G" suffix in the part number explicitly denotes Pb-free packaging per onsemi's ordering nomenclature.
What is the thermal resistance from junction to lead (RJL) for the NSL12AWT1G?
The NSL12AWT1G has a specified RJL of 105 °C/W, measured from junction to lead (pin 4, emitter). This value reflects efficient heat transfer from the die to the PCB via the emitter lead, supporting sustained high-current operation when mounted on adequately sized copper pads.
NSL12AWT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 12 V
- Vce Saturation (Max) @ Ib, Ic:
- 290mV @ 20mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 800mA, 1.5 V
- Power - Max:
- 450 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-88/SC70-6/SOT-363
NSL12AWT1G FAQ
1.How can I place an order for NSL12AWT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSL12AWT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSL12AWT1G reliable?
The price and inventory of NSL12AWT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSL12AWT1G is usually 5 days.
3.What payment methods are accepted for NSL12AWT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSL12AWT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSL12AWT1G?
NSL12AWT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSL12AWT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSL12AWT1G?
For technical support, including NSL12AWT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSL12AWT1G requirements.
6.How does Aetrix verify that NSL12AWT1G is sourced from the original manufacturer or authorized distributors?
All NSL12AWT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSL12AWT1G meets industry standards.
7.What is the process for return or replacement of NSL12AWT1G?
All NSL12AWT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSL12AWT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSL12AWT1G part is unused and in its original packaging.
Return procedure for NSL12AWT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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