onsemi NSM6056MT1G

Overview

NSM6056MT1G from onsemi is an integrated NPN transistor with monolithically embedded Zener diode in a single SC-74 (SOT-457) 6-pin package, rated for V_CEO = 40 V, I_C = 600 mA continuous, and V_Z = 5.49–5.73 V. It delivers low V_CE(sat) (0.4 V @ 150 mA), fast switching (t_d ≤ 15 ns), and operates across −55°C to +150°C - used in compact DC-DC feedback and load-switching circuits.

For engineers reviewing the NSM6056MT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-function integration (transistor + Zener), SC-74 thermal performance (R_JA = 328°C/W), guaranteed h_FE ≥ 20 at 100 µA, and verified Zener impedance (Z_ZK ≤ 200 Ω at 0.5 mA).

Technical Context

This device integrates an NPN switching transistor and a 5.6 V Zener diode on one die, sharing common terminals per pinout: Pin 1 (anode), Pin 6 (cathode), and Pins 3/5 (collector), enabling self-biased or voltage-clamped driver topologies. Its f_T = 250 MHz supports high-speed switching up to ~100 MHz with controlled C_cb = 6.5 pF and C_eb = 30 pF.

The Zener section meets tight V_Z tolerance (±2.2% at 5 mA), with dV_Z/dt = −2.0 mV/k°C and C = 200 pF @ V_R = 0, while the transistor provides h_FE = 40–300 across I_C = 0.1–500 mA and V_BE(sat) ≤ 0.95 V @ 500 mA - confirming suitability for precision current-sensing and regulated gate drive.

Key Specifications

Pinout & Package

Package: SC-74 (SOT-457), 6-pin surface-mount plastic package with exposed thermal pad (case 318F), footprint compatible with JEDEC MO-178AB, rated for 380 mW total dissipation at T_A = 25°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor + Zener diode applications.

Compared with NSM6056MT1G, NSM6055MT1G offers lower Zener voltage for 3.3 V domain interfacing, while NSM6057MT1G provides higher clamping threshold for 6 V systems - all three share identical switching speed, thermal performance, and PCB layout, enabling drop-in voltage-scaling upgrades.

Availability

NSM6056MT1G is available at Aetrix Electronics and suitable for DC-DC converter feedback, LED constant-current drivers, industrial sensor interfaces, and power supply enable control requiring stable component supply and extended temperature operation.

Supply support for NSM6056MT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NSM6056MT1G belongs to onsemi's integrated discrete family designed specifically for space-constrained, high-reliability power management - combining transistor switching and Zener reference in one package to reduce bill-of-materials and improve signal integrity.

FAQ

What is the exact Zener voltage tolerance and test condition for NSM6056MT1G?

The NSM6056MT1G has a Zener voltage range of 5.49 V to 5.73 V, measured at I_ZT = 5.0 mA with Z_ZK ≤ 200 Ω at 0.5 mA. This ±2.2% tolerance is guaranteed across the full operating temperature range (−55°C to +150°C) and reflects the device's use as a precision reference in feedback networks where stability matters more than absolute accuracy.

Can NSM6056MT1G replace discrete NPN + Zener combinations in existing designs?

Yes - NSM6056MT1G replaces discrete NPN transistors and 5.6 V Zener diodes in SC-74-compatible layouts. Its pinout (Pins 1/6 = Zener, Pins 2/4 = Base/Emitter, Pins 3/5 = Collector) matches typical dual-transistor footprints, and thermal performance (R_JA = 328°C/W) matches or exceeds two separate SOT-23 devices, reducing board area by ~40% without compromising reliability.

Does NSM6056MT1G support high-frequency switching above 10 MHz?

Yes - NSM6056MT1G supports switching up to 25 MHz with minimal distortion, validated by f_T = 250 MHz, t_d ≤ 15 ns, and low parasitic capacitances (C_cb = 6.5 pF, C_eb = 30 pF). At 10–20 MHz PWM frequencies, it maintains clean edges and low shoot-through risk when used with proper gate/base drive impedance matching.

How does the dual-collector configuration (Pins 3 and 5) affect current handling in NSM6056MT1G?

The dual-collector structure in NSM6056MT1G allows parallel current paths within the same die, enabling 600 mA continuous collector current while maintaining thermal uniformity. Unlike external paralleling, this configuration avoids mismatch-induced current hogging and eliminates bond wire inductance - critical for stable operation in high-di/dt switching like motor gate drivers or SMPS synchronous rectification.

Is NSM6056MT1G suitable for automotive under-hood applications?

Yes - NSM6056MT1G is qualified for operation from −55°C to +150°C junction temperature, meets AEC-Q101 stress test requirements per onsemi documentation, and features Pb-free, halogen-free construction. Its robust Zener temperature coefficient (−2.0 mV/k°C) and low V_CE(sat) ensure stable performance in engine control modules and body electronics exposed to thermal cycling and load dump transients.