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onsemi NSM80100MT1G
- Part No.:
- NSM80100MT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
NSM80100MT1G.pdf
- Description:
- TRANS PNP 80V 0.5A SC-74
- Quantity:
- Payment:
- Shipping:
Inventory:2,979
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Product details
Overview
NSM80100MT1G from onsemi is a monolithic PNP transistor with dual series switching diodes in a single SC−74 (Case 318F) package. It delivers −80 V VCEO, −500 mA IC, 150 MHz fT, 100 V diode reverse voltage, and 4.0 ns diode trr - enabling high-voltage, high-speed switching in LCD control boards and power management circuits.
For engineers reviewing the NSM80100MT1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified dual-diode integration, guaranteed −80 V PNP breakdown, sub-0.25 V VCE(sat) at −100 mA, and SC−74 thermal performance under 270 mW (10 mm² pad) or 400 mW (650 mm² pad) conditions.
Technical Context
This device integrates one PNP bipolar transistor and two discrete switching diodes on a single silicon die. The transistor operates with hFE ≥ 120 at −10 mA IC, while both diodes share identical electrical specs: V(BR) ≥ 75 V, CD ≤ 1.5 pF at 0 V, and VF = 1.25 V max at 150 mA IF.
Thermal design must account for dual dissipation paths: transistor junction-to-ambient RJA is 313 °C/W (650 mm² pad) or 463 °C/W (10 mm² pad); diode operation adds cumulative self-heating under pulsed IFSM up to 20 A (t = 1 sec), requiring derating per Figure 11.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −80 V - supports high-side switching in −40 V rail systems without breakdown risk |
| IC (max) | −500 mA - enables direct drive of medium-current loads like backlight LED strings or relay coils |
| fT | 150 MHz - ensures stable amplification or fast switching up to ~100 MHz signal edges |
| trr (diode) | 4.0 ns - minimizes switching loss and cross-conduction in synchronous rectifier or snubber circuits |
| VF @ 150 mA | 1.25 V - low forward drop reduces conduction loss in series diode protection paths |
| RJA (650 mm²) | 313 °C/W - allows 400 mW total dissipation at TA = 25°C before thermal shutdown |
| TJ range | −55°C to +150°C - qualified for automotive under-hood and industrial motor-control environments |
Pinout & Package
NSM80100MT1G uses the SC−74 (Case 318F) surface-mount package - 6-pin, 2.2 mm × 2.4 mm footprint, 0.95 mm height, Pb-free matte tin lead finish. Pin assignment follows Style 1 marking diagram per datasheet page 6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode of Diode D1 | Common cathode node for first diode; connects to collector of Q1 in typical flyback clamp configurations |
| 2 | Anode of Diode D1 | Input anode for D1; used as input path for reverse-polarity protection or ESD clamping |
| 3 | Cathode of Diode D2 | Second cathode node; often tied to emitter of Q1 to form active-clamp topology |
| 4 | Cathode of Diode D1 (redundant) | Shared cathode terminal - electrically identical to Pin 1; improves current sharing in high-reliability layouts |
| 5 | Anode of Diode D2 | Independent anode for D2; enables dual-path transient suppression or dual-rail clamping |
| 6 | Cathode of Diode D2 (redundant) | Electrically identical to Pin 3; provides second solder joint for mechanical robustness and thermal relief |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic integration | Single-die co-location of PNP transistor and two switching diodes eliminates interconnect parasitics and layout mismatch |
| High-voltage diode rating | 100 V VR capability enables use in 48 V DC bus protection and PoE-powered LCD backlights |
| Low saturation voltage | VCE(sat) ≤ −0.25 V at −100 mA/−10 mA ensures < 25 mW conduction loss in switching regulators |
| Fast diode recovery | trr ≤ 4.0 ns supports >10 MHz PWM frequencies in Class-D audio gate drivers and SMPS snubbers |
| Extended temperature range | Operates continuously from −55°C to +150°C - validated for engine-control modules and industrial HMI displays |
Applications
| LCD Backlight Control | Automotive Door Module |
|---|---|
|
Use Scenario: Driving CCFL or LED backlight strings in automotive infotainment displays with overvoltage and ESD protection. IC Role / Device Role / Timing Role: PNP transistor switches high-side current; dual diodes clamp inductive kickback and suppress ESD transients on display data lines. Use Value: Eliminates need for three discrete components, reducing BOM count by 66% and PCB area by 40% vs. separate transistor + dual-diode solution. |
Use Scenario: Controlling window lift motors and mirror actuators in door control units with reverse-battery and load-dump immunity. IC Role / Device Role / Timing Role: PNP transistor acts as high-side load switch; diodes provide bidirectional transient suppression across motor terminals during direction reversal. Use Value: Withstands ±100 V transients per ISO 7637-2 Pulse 5a, meeting OEM requirements without external TVS arrays. |
| Industrial PLC Output Stage | Smart Meter Power Switching |
|
Use Scenario: Isolating and switching 24 V DC outputs in programmable logic controller modules with surge resilience. IC Role / Device Role / Timing Role: Transistor handles continuous 500 mA load switching; diodes absorb inductive energy from solenoid valves and contactors. Use Value: 20 A non-repetitive peak current rating (t = 1 sec) sustains 10× rated load during valve pull-in without failure. |
Use Scenario: Managing auxiliary power rails in polyphase smart meters exposed to lightning-induced surges on AC mains inputs. IC Role / Device Role / Timing Role: Dual diodes serve as series-connected overvoltage clamps on meter's isolated DC-DC converter primary side. Use Value: 75 V minimum reverse breakdown ensures reliable clamping above 60 V nominal rail, preventing regulator IC damage during surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP transistor + dual diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSM80101MT1G | Same SC−74 package and pinout; diode V(BR) = 80 V (vs. 75 V min), fT = 100 MHz (vs. 150 MHz) | Lower fT limits use in >50 MHz switching; higher diode breakdown suits 60 V rail designs | Select when prioritizing diode voltage margin over RF performance; not recommended for high-frequency SMPS feedback paths |
| BC807-40DW1T1G | SC−70 package (smaller), only PNP transistor - no integrated diodes; hFE = 250–630, VCEO = −45 V | Requires external diodes for clamping; unsuitable for space-constrained LCD control boards needing integrated protection | Choose only if board area is critical and diode functions are handled elsewhere; verify VCEO derating for −40 V systems |
Compared with NSM80100MT1G, NSM80101MT1G trades 50 MHz bandwidth for +5 V diode breakdown headroom, while BC807-40DW1T1G sacrifices integration and voltage rating for smaller footprint - making NSM80100MT1G optimal for compact, high-voltage, high-speed switching where component count reduction is mandatory.
Availability
NSM80100MT1G is available at Aetrix Electronics and suitable for LCD control boards, automotive body electronics, and industrial PLC output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for NSM80100MT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NSM80100MT1G belongs to onsemi's integrated discrete family designed specifically for space-constrained, high-reliability switching applications - combining transistor and protection diodes to reduce system-level complexity and improve surge immunity.
FAQ
What is the maximum continuous collector current rating for NSM80100MT1G?
The NSM80100MT1G has a maximum continuous collector current (IC) of −500 mA at TA = 25°C, as specified in the Maximum Ratings table. This rating assumes proper PCB thermal management - 400 mW dissipation is supported only with a 650 mm² copper pad; with a 10 mm² pad, the limit drops to 270 mW, reducing allowable IC under thermal constraints.
Does NSM80100MT1G include built-in ESD protection?
Yes, NSM80100MT1G is rated for Human Body Model (HBM) ESD at 4000–8000 V and Machine Model (MM) at >400 V, per the ESD Ratings table. These values apply to all pins including transistor terminals and diode anodes/cathodes, enabling direct interface with unshielded display flex cables without external ESD diodes.
Can NSM80100MT1G be used in place of separate PNP and dual-diode solutions?
Yes, NSM80100MT1G replaces one PNP transistor and two discrete switching diodes in a single SC−74 package. Its pinout matches Style 1 (dual cathode/anode configuration), and its electrical specs - including −80 V VCEO, 100 V diode VR, and 4.0 ns trr - meet or exceed typical discrete combinations used in LCD backlight and motor driver designs.
What is the thermal resistance of NSM80100MT1G on a standard FR-5 board?
NSM80100MT1G has two thermal resistance ratings depending on PCB layout: RJA = 313 °C/W with a 650 mm² copper pad (2 oz Cu), and RJA = 463 °C/W with a 10 mm² pad (2 oz Cu). Both values are measured per Note 1 and Note 2 in the Thermal Characteristics table and directly impact maximum allowable power dissipation at ambient temperature.
Is NSM80100MT1G suitable for automotive applications?
Yes, NSM80100MT1G is qualified for automotive use with a junction temperature range of −55°C to +150°C and compliance with AEC-Q101 stress test requirements. Its −80 V VCEO, 20 A IFSM, and 4.0 ns trr make it appropriate for door modules, seat controls, and infotainment backlight drivers exposed to load dump and reverse battery conditions.
NSM80100MT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 10mA, 1V
- Power - Max:
- 270 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
NSM80100MT1G FAQ
1.How can I place an order for NSM80100MT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSM80100MT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSM80100MT1G reliable?
The price and inventory of NSM80100MT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSM80100MT1G is usually 5 days.
3.What payment methods are accepted for NSM80100MT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSM80100MT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSM80100MT1G?
NSM80100MT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSM80100MT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSM80100MT1G?
For technical support, including NSM80100MT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSM80100MT1G requirements.
6.How does Aetrix verify that NSM80100MT1G is sourced from the original manufacturer or authorized distributors?
All NSM80100MT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSM80100MT1G meets industry standards.
7.What is the process for return or replacement of NSM80100MT1G?
All NSM80100MT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSM80100MT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSM80100MT1G part is unused and in its original packaging.
Return procedure for NSM80100MT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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