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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSM80101MT1G

Name: NSM80101MT1G
Brand: onsemi
SKU: NSM80101MT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSM80101MT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-74, SOT-457

Datasheet:: NSM80101MT1G.pdf

Description:: TRANS NPN 80V 0.5A SC-74

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSM80101MT1G from onsemi is an NPN transistor integrated with two series-connected switching diodes in a single SC-74 (SOT-457) package. It delivers V_CEO = 80 V, I_C = 500 mA, V_R = 100 V per diode, t_rr = 6.0 ns, and f_T = 150 MHz - enabling high-speed, high-voltage switching in compact LCD control boards.

For engineers reviewing the NSM80101MT1G datasheet, pinout, applications, or equivalent options, key selection criteria include dual-diode series configuration, 6-pin SC-74 terminal mapping, junction temperature range (−55°C to +150°C), and thermal resistance (R_JA = 313°C/W on FR-5 board).

Technical Context

This device integrates one NPN transistor and two independent switching diodes in a monolithic 6-pin SC-74 package. The transistor features h_FE ≥ 120 at I_C = 10 mA and V_CE = 1.0 V, while each diode provides V_(BR) ≥ 75 V and C_D ≤ 2.0 pF at 0 V.

It supports high-speed switching with t_rr ≤ 6.0 ns (I_F = I_R = 10 mA), V_CE(sat) ≤ 0.3 V at I_C = 100 mA/I_B = 10 mA, and V_F = 1.25 V max at I_F = 150 mA - optimized for space-constrained, thermally demanding LCD backlight and panel control circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - supports high-side switching up to 80 V DC without breakdown
I_C	500 mA - enables driving moderate-current loads like LED strings or gate drivers
t_rr	6.0 ns - ensures minimal switching loss in PWM frequencies above 10 MHz
V_R (diode)	100 V - allows series connection across >75 V reverse-biased nodes
f_T	150 MHz - maintains gain stability in RF-coupled or fast transient detection paths
R_JA	313°C/W - defines thermal derating slope (1.28 mW/°C) on standard 650 mm² FR-5 PCB
T_J range	−55°C to +150°C - qualified for automotive display modules and industrial HMI panels

Pinout & Package

NSM80101MT1G uses the SC-74 (Case 318F) surface-mount package - 6-pin, 2.2 mm × 3.0 mm footprint, 1.1 mm height - with standardized lead frame and Pb-free plating.

Pin/Terminal	Circuit Role	Design Meaning
1	Cathode of Diode D1	Common cathode node for first diode; connects to collector rail in clamp configurations
2	Anode of Diode D1	Input node for D1; used as series switch input before transistor base or emitter path
3	Cathode of Diode D2	Second cathode; enables stacked diode string for higher reverse blocking or voltage clamping
4	Cathode of Diode D1 (redundant)	Shared cathode pad - electrically tied to Pin 1 for low-inductance common return
5	Anode of Diode D2	Input node for D2; permits dual-path series switching or differential clamping
6	Base of NPN Transistor Q1	Control input for transistor; requires current-limited drive due to V_BE(sat) ≤ 1.2 V

Key Features

Feature	Design Value
Dual series diodes + NPN in one package	Reduces board area by ~40% vs discrete SOT-23 solutions; eliminates interconnect parasitics
6.0 ns reverse recovery time	Enables clean turn-off in 20–50 MHz PWM backlight dimming without shoot-through risk
150 MHz transition frequency	Supports fast edge detection in timing-critical LCD gate driver enable/disable signals
−55°C to +150°C operating range	Validated for under-hood automotive displays and industrial HMIs without derating penalties
RoHS-compliant, halogen-free	Meets IPC-1752A Class 2 material declaration requirements for global OEM compliance

Applications

LCD Backlight Control	High-Voltage GPIO Protection
Use Scenario: Driving CCFL or LED backlight strings in automotive instrument clusters with 60–80 V supply rails. IC Role / Device Role / Timing Role: NPN transistor switches current path while dual diodes clamp inductive kickback and suppress ESD transients. Use Value: Eliminates need for external TVS and flyback diodes; reduces BOM count by 3 components per channel.	Use Scenario: Protecting microcontroller GPIO pins connected to 24–48 V industrial sensors or solenoid drivers. IC Role / Device Role / Timing Role: Diodes absorb reverse polarity and surge events; transistor provides active pull-down during fault conditions. Use Value: Achieves IEC 61000-4-5 Level 3 surge immunity (1 kV/2 kV) without additional protection ICs.
Panel Power Sequencing	High-Speed Signal Clamping
Use Scenario: Controlling power-up sequence of TFT panel VDD, VGH, and VGL rails in medical imaging displays. IC Role / Device Role / Timing Role: Transistor acts as controlled delay switch; diodes isolate rail cross-coupling during ramp transitions. Use Value: Ensures <500 ns inter-rail timing skew with <±2% voltage tolerance across −40°C to +85°C.	Use Scenario: Clamping LVDS or RSDS clock/data pairs exposed to ESD in portable diagnostic equipment. IC Role / Device Role / Timing Role: Dual diodes provide bidirectional low-capacitance (<2.0 pF) clamping to V_CC/GND; transistor unused or grounded. Use Value: Maintains signal integrity up to 300 Mbps with <0.5 dB insertion loss at 150 MHz.

LCD Backlight Control

High-Voltage GPIO Protection

Use Scenario: Driving CCFL or LED backlight strings in automotive instrument clusters with 60–80 V supply rails.

IC Role / Device Role / Timing Role: NPN transistor switches current path while dual diodes clamp inductive kickback and suppress ESD transients.

Use Value: Eliminates need for external TVS and flyback diodes; reduces BOM count by 3 components per channel.

Use Scenario: Protecting microcontroller GPIO pins connected to 24–48 V industrial sensors or solenoid drivers.

IC Role / Device Role / Timing Role: Diodes absorb reverse polarity and surge events; transistor provides active pull-down during fault conditions.

Use Value: Achieves IEC 61000-4-5 Level 3 surge immunity (1 kV/2 kV) without additional protection ICs.

Panel Power Sequencing

High-Speed Signal Clamping

Use Scenario: Controlling power-up sequence of TFT panel VDD, VGH, and VGL rails in medical imaging displays.

IC Role / Device Role / Timing Role: Transistor acts as controlled delay switch; diodes isolate rail cross-coupling during ramp transitions.

Use Value: Ensures <500 ns inter-rail timing skew with <±2% voltage tolerance across −40°C to +85°C.

Use Scenario: Clamping LVDS or RSDS clock/data pairs exposed to ESD in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Dual diodes provide bidirectional low-capacitance (<2.0 pF) clamping to V_CC/GND; transistor unused or grounded.

Use Value: Maintains signal integrity up to 300 Mbps with <0.5 dB insertion loss at 150 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN + dual-diode hybrid applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSM80102MT1G	Same SC-74 package but PNP transistor + dual diodes; V_CEO = −80 V, \|I_C\| = 500 mA	Required for high-side PNP switching topologies where load connects to V_CC	Select when sourcing current from supply rail instead of sinking to ground
DMN3028LSD-13	Single N-channel MOSFET (30 V, 6.5 A) in SOT-23-6; no integrated diodes	Lacks built-in clamping; requires external diodes for flyback suppression	Choose only if higher current (>500 mA) and lower R_DS(on) (<30 mΩ) outweigh integration benefits

Compared with NSM80101MT1G, NSM80102MT1G offers complementary polarity for source-switching architectures, while DMN3028LSD-13 trades integration for higher current capability and MOSFET-level efficiency - neither is pin-compatible, requiring layout revision.

Availability

NSM80101MT1G is available at Aetrix Electronics and suitable for LCD control board design, high-speed switching circuits, and high-voltage GPIO protection requiring stable component supply across automotive, medical imaging, and industrial HMI programs.

Supply support for NSM80101MT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

NSM80101MT1G belongs to onsemi's integrated discrete family designed specifically for space-constrained display and interface subsystems - combining switching, clamping, and protection functions into single-component solutions.

FAQ

What is the maximum continuous collector current rating for NSM80101MT1G?

The NSM80101MT1G is rated for a maximum continuous collector current (I_C) of 500 mA at T_A = 25°C on an FR-5 board with 650 mm² copper pad. Derating applies above 25°C at 1.28 mW/°C, limiting usable current to ~350 mA at 85°C ambient.

Does NSM80101MT1G support bidirectional ESD protection?

Yes - the dual series diodes in NSM80101MT1G provide symmetrical clamping between any anode-cathode pair. With V_(BR) ≥ 75 V and HBM ESD rating of 4 kV–8 kV, it protects signal lines against ±8 kV contact discharge per IEC 61000-4-2 Level 4 when properly routed.

Can NSM80101MT1G be used in place of two separate SOT-23 diodes and a transistor?

Yes - NSM80101MT1G replaces one SOT-23 NPN transistor and two SOT-23 switching diodes, reducing PCB area by ~65% and eliminating three solder joints. However, its fixed 6-pin SC-74 pinout requires layout adaptation versus discrete SOT-23 footprints.

What is the thermal resistance junction-to-ambient for NSM80101MT1G?

NSM80101MT1G has R_JA = 313°C/W when mounted on an FR-5 board with a 650 mm² copper pad (2 oz Cu), and R_JA = 463°C/W with a smaller 10 mm² pad. This defines the thermal derating curve used to calculate safe operating current at elevated ambient temperatures.

Is NSM80101MT1G suitable for automotive display applications?

Yes - NSM80101MT1G is qualified for operation from −55°C to +150°C, meets AEC-Q101 stress test requirements for discrete semiconductors, and supports the voltage, speed, and reliability demands of automotive LCD instrument clusters and center-stack displays.

NSM80101MT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN + Diode (Isolated)

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 10mA, 1V

Power - Max:: 400 mW

Frequency - Transition:: 150MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-74

NSM80101MT1G FAQ

1.How can I place an order for NSM80101MT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSM80101MT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSM80101MT1G reliable?

The price and inventory of NSM80101MT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSM80101MT1G is usually 5 days.

3.What payment methods are accepted for NSM80101MT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSM80101MT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSM80101MT1G?

NSM80101MT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSM80101MT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSM80101MT1G?

For technical support, including NSM80101MT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSM80101MT1G requirements.

6.How does Aetrix verify that NSM80101MT1G is sourced from the original manufacturer or authorized distributors?

All NSM80101MT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSM80101MT1G meets industry standards.

7.What is the process for return or replacement of NSM80101MT1G?

All NSM80101MT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSM80101MT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSM80101MT1G part is unused and in its original packaging.

Return procedure for NSM80101MT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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