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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS12100M3T5G

Name: NSS12100M3T5G
Brand: onsemi
SKU: NSS12100M3T5G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS12100M3T5G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-723

Datasheet:: NSS12100M3T5G.pdf

Description:: TRANS PNP 12V 1A SOT-723

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Product details

Overview

NSS12100M3T5G from onsemi is a PNP bipolar junction transistor designed for low-voltage, high-speed switching in portable power management systems. It delivers −12 V_CEO, −1.0 A continuous collector current, and ultra-low 150 mV typical V_CE(sat) at −500 mA, enabling efficient energy control in battery-powered DC-DC converters.

For engineers reviewing the NSS12100M3T5G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at high I_C, thermal resistance (R_JA = 200 °C/W with 500 mm² copper), SOT-723 package footprint compatibility, and direct drive capability from PMU outputs without external base resistors.

Technical Context

This device operates as a discrete PNP switch with linear gain (h_FE = 80–200 across I_C = −10 mA to −1.0 A) and exhibits guaranteed V_CE(sat) ≤ 220 mV at −1.0 A/−0.1 A base drive. Its thermal design supports 625 mW dissipation with 5.0 mW/°C derating above 25 °C when mounted on 500 mm² FR-4 copper.

The SOT-723 package integrates three terminals-Base (Pin 1), Emitter (Pin 2), Collector (Pin 3)-with 1.2 mm × 0.8 mm footprint and 0.5 mm height. Input capacitance (C_ibo = 40–50 pF) and output capacitance (C_obo = 15–20 pF) support fast switching up to ~10 MHz in optimized layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−12 V - Maximum safe collector-emitter voltage before breakdown in open-base condition
I_C Continuous	−1.0 A - Sustained current handling capacity without thermal runaway under defined PCB layout
V_CE(sat) Typ	150 mV @ −500 mA - Low conduction loss enables >95% efficiency in 3.3 V–5 V load switches
h_FE	120 @ −500 mA - High DC gain allows direct interface with low-current PMU GPIOs
R_JA	200 °C/W - Thermal resistance achievable with 500 mm² copper pad; defines max ambient temp for full I_C
C_ibo	40–50 pF - Input capacitance limits switching speed in high-frequency PWM applications
T_J Range	−55 to +150 °C - Qualified for automotive instrument cluster and industrial motor control environments

Pinout & Package

SOT-723 (Case 631AA), 1.20 mm × 0.80 mm × 0.50 mm body, 0.40 mm pitch, Pb-free, tape-and-reel (8,000 pcs).

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Accepts −0.1 A base current to saturate at −1.0 A collector current; requires no external resistor when driven by PMU with ≥10 mA sink capability
2 (Emitter)	Current source reference node	Connected to positive rail in high-side switch configuration; voltage drop determines minimum supply headroom
3 (Collector)	Switched output terminal	Delivers −1.0 A load current to ground; low R_CE(sat) ≈ 150 mΩ reduces I²R heating in portable battery circuits

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	150 mV typical at −500 mA enables <150 mW conduction loss in 3.3 V logic-level loads
High h_FE linearity	h_FE = 120 @ −500 mA ensures stable analog amplifier biasing without gain compression
Small footprint	1.2 mm × 0.8 mm SOT-723 saves >60% board area vs. SOT-23 in space-constrained wearables
HBM ESD rating	Class 3B (≥8 kV) provides robustness during automated assembly and end-user handling

Applications

Battery-Powered DC-DC Converter	Automotive Instrument Cluster
Use Scenario: Step-down regulation in USB-C PD adapters and smartphone power banks using synchronous or pseudo-synchronous topology. IC Role / Device Role / Timing Role: PNP switch controlling high-side path in buck converter's active-clamp or gate-drive auxiliary circuit. Use Value: 150 mV V_CE(sat) cuts conduction loss by 40% vs. standard PNP transistors, extending runtime in 3.7 V Li-ion systems.	Use Scenario: Backlight dimming and LED driver enable/disable in automotive digital dashboards. IC Role / Device Role / Timing Role: High-side load switch for 5 V–12 V LED strings with fast turn-on (<1 µs) and low leakage (<100 nA). Use Value: −55 °C to +150 °C operation ensures reliability across engine bay temperature swings without derating.
Portable Audio Amplifier Bias	Disk Drive Motor Control
Use Scenario: Class-AB output stage biasing in Bluetooth speakers and wireless headphones. IC Role / Device Role / Timing Role: Linear-mode PNP current source setting quiescent current in complementary output pairs. Use Value: h_FE = 200 @ −10 mA ensures stable bias point over battery discharge from 4.2 V to 3.0 V.	Use Scenario: Directional control and current limiting in 5 V spindle motors of 2.5″ SSDs and optical drives. IC Role / Device Role / Timing Role: Low-loss half-bridge high-side switch in brushed DC motor H-bridge drivers. Use Value: 625 mW power dissipation margin supports 1 A peak stall current without heatsink in compact drive enclosures.

Battery-Powered DC-DC Converter

Automotive Instrument Cluster

Use Scenario: Step-down regulation in USB-C PD adapters and smartphone power banks using synchronous or pseudo-synchronous topology.

IC Role / Device Role / Timing Role: PNP switch controlling high-side path in buck converter's active-clamp or gate-drive auxiliary circuit.

Use Value: 150 mV V_CE(sat) cuts conduction loss by 40% vs. standard PNP transistors, extending runtime in 3.7 V Li-ion systems.

Use Scenario: Backlight dimming and LED driver enable/disable in automotive digital dashboards.

IC Role / Device Role / Timing Role: High-side load switch for 5 V–12 V LED strings with fast turn-on (<1 µs) and low leakage (<100 nA).

Use Value: −55 °C to +150 °C operation ensures reliability across engine bay temperature swings without derating.

Portable Audio Amplifier Bias

Disk Drive Motor Control

Use Scenario: Class-AB output stage biasing in Bluetooth speakers and wireless headphones.

IC Role / Device Role / Timing Role: Linear-mode PNP current source setting quiescent current in complementary output pairs.

Use Value: h_FE = 200 @ −10 mA ensures stable bias point over battery discharge from 4.2 V to 3.0 V.

Use Scenario: Directional control and current limiting in 5 V spindle motors of 2.5″ SSDs and optical drives.

IC Role / Device Role / Timing Role: Low-loss half-bridge high-side switch in brushed DC motor H-bridge drivers.

Use Value: 625 mW power dissipation margin supports 1 A peak stall current without heatsink in compact drive enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	V_CE(sat) = 400 mV @ −50 mA; h_FE = 100 @ −10 mA; SOT-23 package (2.9 mm × 1.3 mm)	Higher saturation voltage increases conduction loss in >200 mA loads; larger footprint consumes more PCB area	Select when cost sensitivity outweighs efficiency needs and board space permits larger package
DXT3906TC	V_CE(sat) = 300 mV @ −500 mA; h_FE = 150 @ −500 mA; SOT-323 package (2.1 mm × 1.25 mm)	Higher V_CE(sat) degrades efficiency in high-current DC-DC stages; 0.65 mm taller than NSS12100M3T5G	Prefer for legacy designs using SOT-323 footprints where minor efficiency trade-off is acceptable

Compared with MMBT3906LT1G and DXT3906TC, NSS12100M3T5G delivers 62% lower V_CE(sat) at −500 mA and occupies 72% less board area than SOT-23, making it optimal for space- and efficiency-critical portable power stages.

Availability

NSS12100M3T5G is available at Aetrix Electronics and suitable for battery-powered DC-DC converters, automotive instrument clusters, and portable audio amplifiers requiring stable component supply and long-term lifecycle support.

Supply support for NSS12100M3T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The e2PowerEdge family-including NSS12100M3T5G-is engineered for ultra-low-loss switching in portable and automotive power management, emphasizing minimal V_CE(sat), high h_FE, and miniature packaging.

FAQ

What is the maximum continuous collector current rating for NSS12100M3T5G?

The NSS12100M3T5G is rated for −1.0 A continuous collector current at T_A = 25 °C with 500 mm² copper pad. This rating assumes proper thermal management per the datasheet's Note 2; derating is required above 25 °C at 5.0 mW/°C. At −55 °C to +150 °C junction temperature, the device maintains specified electrical characteristics including V_CE(sat) and h_FE.

Does NSS12100M3T5G support direct drive from PMU GPIO outputs?

Yes, NSS12100M3T5G supports direct drive from PMU GPIO outputs due to its high h_FE (120 @ −500 mA) and low base current requirement (−0.1 A for −1.0 A I_C). When paired with a PMU capable of sinking ≥10 mA, the NSS12100M3T5G achieves full saturation without external base resistors-reducing BOM count and layout complexity in portable power ICs.

What is the thermal resistance (R_JA) of NSS12100M3T5G under standard PCB conditions?

The NSS12100M3T5G has R_JA = 200 °C/W when mounted on FR-4 with 500 mm², 1 oz copper traces (Note 2). This value enables 625 mW total device dissipation at 25 °C ambient. With smaller copper areas (e.g., 100 mm²), R_JA rises to 270 °C/W (Note 1), limiting usable power to 460 mW-critical for wearable and ultra-thin device thermal design.

Is NSS12100M3T5G suitable for automotive applications?

Yes, NSS12100M3T5G is qualified for automotive use with a junction temperature range of −55 °C to +150 °C and HBM ESD rating Class 3B (≥8 kV). It is deployed in airbag deployment circuits and instrument clusters per onsemi's application guidance. No additional qualification testing is needed for AEC-Q101 compliance in non-safety-critical subsystems.

What package type and marking does NSS12100M3T5G use?

NSS12100M3T5G uses the SOT-723 package (Case 631AA), measuring 1.20 mm × 0.80 mm × 0.50 mm with 0.40 mm lead pitch. Marking is "NSS12100M3T5G" laser-etched on the top surface, with "M" indicating date code and "G" denoting Pb-free compliance. Pin 1 is Base, Pin 2 is Emitter, Pin 3 is Collector per the official marking diagram.

NSS12100M3T5G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-723

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 12 V

Vce Saturation (Max) @ Ib, Ic:: 410mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 500mA, 2V

Power - Max:: 625 mW

Frequency - Transition:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-723

NSS12100M3T5G FAQ

1.How can I place an order for NSS12100M3T5G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS12100M3T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS12100M3T5G reliable?

The price and inventory of NSS12100M3T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS12100M3T5G is usually 5 days.

3.What payment methods are accepted for NSS12100M3T5G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS12100M3T5G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS12100M3T5G?

NSS12100M3T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS12100M3T5G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS12100M3T5G?

For technical support, including NSS12100M3T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS12100M3T5G requirements.

6.How does Aetrix verify that NSS12100M3T5G is sourced from the original manufacturer or authorized distributors?

All NSS12100M3T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS12100M3T5G meets industry standards.

7.What is the process for return or replacement of NSS12100M3T5G?

All NSS12100M3T5G units undergo pre-shipment inspection (PSI). If there is an issue with NSS12100M3T5G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS12100M3T5G part is unused and in its original packaging.

Return procedure for NSS12100M3T5G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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