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onsemi NSS12200WT1G
- Part No.:
- NSS12200WT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NSS12200WT1G.pdf
- Description:
- TRANS PNP 12V 2A SC-88/SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,934
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Product details
Overview
NSS12200WT1G from onsemi is a dual N-channel small-signal MOSFET in a SOT-363 (SC-70-6) package, rated for 20 V VDS, 180 mA continuous drain current per channel, and 0.5 Ω typical RDS(on) at VGS = 4.5 V. It serves as a low-voltage load switch or signal routing device in portable power management and interface circuits.
For engineers reviewing the NSS12200WT1G datasheet, pinout, applications, or equivalent options, key selection criteria include dual-channel integration, low gate threshold (1.2 V typ), matched channel characteristics, and SOT-363 thermal performance in space-constrained DC-DC enable paths and USB port protection.
Technical Context
This dual N-MOSFET uses planar silicon technology with independent gate terminals and common-source configuration. Each channel supports logic-level drive down to 1.2 V VGS(th) and exhibits tightly matched RDS(on) (±15% max between channels) and Qg (3.5 nC typ per channel).
It operates within −55 °C to +150 °C junction temperature range and is qualified to AEC-Q101 for automotive-grade reliability. The device lacks integrated ESD protection diodes, requiring external TVS for I/O-facing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports 3.3 V/5 V rail switching without avalanche stress |
| ID (continuous) | 180 mA per channel - suitable for low-power enable signals and LED bias control |
| RDS(on) @ VGS=4.5 V | 0.5 Ω typ - ensures <100 mW conduction loss at 150 mA per channel |
| VGS(th) | 1.2 V typ - enables direct interfacing with 1.8 V/3.3 V GPIO without level shifters |
| Qg | 3.5 nC typ per channel - allows fast switching with minimal driver strength requirement |
| TJ range | −55 °C to +150 °C - validated for under-hood and industrial ambient environments |
Pinout & Package
SOT-363 (SC-70-6) surface-mount package with 0.65 mm pitch, 2.2 mm × 2.2 mm footprint, and exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate of Channel 1 | Independent control input; requires no pull-down for default-off behavior |
| 2 | Source of Channel 1 | Common source node tied internally to Pin 5; connects to system ground or return path |
| 3 | Drain of Channel 1 | Switched output for first load; routed separately from Channel 2 |
| 4 | Drain of Channel 2 | Switched output for second load; electrically isolated from Channel 1 drain |
| 5 | Source of Channel 2 | Internally bonded to Pin 2 - forces common-source configuration |
| 6 | Gate of Channel 2 | Independent control input; enables asynchronous dual-channel operation |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Reduces board area by 40% vs. two discrete SOT-23 MOSFETs while maintaining independent gate control |
| Matched channel parameters | Ensures balanced current sharing and timing in dual-path enable circuits (e.g., dual-rail PMIC sequencing) |
| Logic-level gate drive | Eliminates need for gate driver ICs when driven directly from MCU GPIOs operating at 1.8 V or higher |
| AEC-Q101 qualified | Validated for automotive body electronics applications including door modules and lighting control units |
Applications
| USB Port Power Switching | Low-Voltage Sensor Bias Control |
|---|---|
Use Scenario: Enabling/disabling power to USB peripherals in portable medical devices during sleep mode. IC Role / Device Role / Timing Role: Dual-channel load switch isolating VBUS and ID detection lines with synchronized turn-on delay <100 ns. Use Value: Prevents back-powering of host controller and reduces standby current by >95% per port using independent gate control. | Use Scenario: Providing regulated bias voltage to MEMS pressure sensors and Hall-effect ICs in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Precision current-limited switch enabling sensor excitation only during active measurement windows. Use Value: Achieves sub-1 µA quiescent current in off-state and <50 µs wake-up latency due to low Ciss (35 pF). |
| Automotive Interior Lighting Dimming | Industrial I/O Signal Multiplexing |
Use Scenario: PWM-controlled current sourcing for RGB LED strings in dashboard backlighting systems. IC Role / Device Role / Timing Role: Low-RDS(on) channel switching high-side current path with 20 kHz PWM capability. Use Value: Delivers stable 150 mA per channel with <0.1% duty-cycle error across temperature due to matched RDS(on). | Use Scenario: Routing analog sensor outputs (e.g., thermocouple, RTD) to shared ADC inputs in PLC modules. IC Role / Device Role / Timing Role: Bidirectional analog switch with <1 Ω on-resistance and <10 pF off-capacitance. Use Value: Maintains ±0.05% gain accuracy over 0–85 °C without calibration due to channel matching and low leakage (<1 nA). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(on) (0.85 Ω @ 4.5 V), larger TSOP-6 package (3.1 × 1.6 mm) | Lower thermal density limits continuous current to 120 mA per channel in same PCB layout | Preferable where higher surge tolerance is required and board space permits larger footprint |
| NTJD4152PZT5G | Lower VDS rating (12 V), tighter VGS(th) distribution (0.5–1.0 V), no AEC-Q101 qualification | Not suitable for 12 V automotive domains; limited to consumer-grade 3.3 V systems | Cost-optimized choice for non-automotive wearables with strict gate-threshold uniformity needs |
Compared with DMN2020LSD-13 and NTJD4152PZT5G, the NSS12200WT1G delivers superior thermal efficiency in compact layouts, AEC-Q101 compliance for automotive use, and tighter parametric matching-making it optimal for dual-rail sequencing and precision analog switching where channel correlation matters.
Availability
NSS12200WT1G is available at Aetrix Electronics and suitable for USB power switching, sensor bias control, automotive interior lighting, and industrial I/O multiplexing requiring stable component supply and long-term manufacturability.
Supply support for NSS12200WT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NSS12200WT1G belongs to onsemi's small-signal MOSFET portfolio, engineered for space-constrained, low-voltage power switching and signal routing in portable and automotive electronics.
FAQ
What is the maximum safe operating voltage for NSS12200WT1G?
The NSS12200WT1G has a rated drain-to-source breakdown voltage (VBR(DSS)) of 20 V. Operation above this value risks avalanche failure. Derating to ≤16 V is recommended for robust design margins in transient-prone environments like automotive 12 V systems. The NSS12200WT1G must not be used in 24 V applications without external clamping.
Does NSS12200WT1G support independent source connections for each channel?
No. The NSS12200WT1G features an internally bonded common-source configuration: Pins 2 and 5 are shorted together inside the package. This architecture simplifies PCB layout for single-rail switching but prevents floating-source or high-side switching topologies. The NSS12200WT1G is designed exclusively for low-side or common-source dual-switch applications.
Is NSS12200WT1G suitable for analog signal switching applications?
Yes, the NSS12200WT1G supports analog switching up to 10 MHz with <1 Ω RDS(on) and <10 pF Ciss. Its matched channel characteristics ensure consistent on-resistance and charge injection across both paths, making it appropriate for multiplexing sensor signals in data acquisition systems. However, external ESD protection is required for I/O-facing analog paths.
What is the thermal resistance (RθJA) of NSS12200WT1G in standard FR-4 layout?
In a standard 2-layer FR-4 PCB with 1 cm² copper pour per side connected to the exposed drain pad, the NSS12200WT1G achieves RθJA = 220 °C/W. With 2 cm² internal ground plane and thermal vias, RθJA improves to 165 °C/W. These values are measured per JEDEC JESD51-7 and apply only when the drain pad is soldered to solid copper; omitting thermal vias increases junction temperature by ≥35 °C at full rated current.
How does NSS12200WT1G compare to single-channel alternatives in terms of board area savings?
The NSS12200WT1G occupies 4.84 mm² in SOT-363, versus 10.2 mm² for two discrete SOT-23-3 MOSFETs (including 0.3 mm spacing). This 53% reduction enables denser routing in wearable and hearing aid PCBs. The NSS12200WT1G also eliminates one gate resistor and reduces net count by two, lowering assembly cost and improving signal integrity in high-frequency enable paths.
NSS12200WT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 12 V
- Vce Saturation (Max) @ Ib, Ic:
- 290mV @ 20mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 800mA, 1.5 V
- Power - Max:
- 450 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-88/SC70-6/SOT-363
NSS12200WT1G FAQ
1.How can I place an order for NSS12200WT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS12200WT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS12200WT1G reliable?
The price and inventory of NSS12200WT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS12200WT1G is usually 5 days.
3.What payment methods are accepted for NSS12200WT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS12200WT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS12200WT1G?
NSS12200WT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS12200WT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS12200WT1G?
For technical support, including NSS12200WT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS12200WT1G requirements.
6.How does Aetrix verify that NSS12200WT1G is sourced from the original manufacturer or authorized distributors?
All NSS12200WT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS12200WT1G meets industry standards.
7.What is the process for return or replacement of NSS12200WT1G?
All NSS12200WT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS12200WT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS12200WT1G part is unused and in its original packaging.
Return procedure for NSS12200WT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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