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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS1C200MZ4T1G

Name: NSS1C200MZ4T1G
Brand: onsemi
SKU: NSS1C200MZ4T1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS1C200MZ4T1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: NSS1C200MZ4T1G.pdf

Description:: TRANS PNP 100V 2A SOT223

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Product details

Overview

NSS1C200MZ4T1G from onsemi is a PNP bipolar junction transistor optimized for low-saturation-voltage switching in portable power management systems. It delivers −100 V V_CEO, −2.0 A continuous collector current, and ultra-low V_CE(sat) of −0.040 V at −0.1 A/−0.01 A drive, enabling high-efficiency DC–DC conversion in battery-powered devices.

For engineers reviewing the NSS1C200MZ4T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT-223 thermal performance (64 °C/W on 645 mm² copper), AEC-Q101 qualification status, and linear h_FE behavior across −10 mA to −2.0 A load range.

Technical Context

This device belongs to onsemi's e2PowerEdge family, engineered specifically for low-voltage, high-speed switching where minimal conduction loss is critical. Its design emphasizes ultra-low V_CE(sat) (down to −0.040 V) and high DC current gain (h_FE = 150 min at −10 mA), supporting direct drive from PMU outputs without external amplification.

The transistor supports dual thermal profiles: 800 mW dissipation with 155 °C/W R_JA on minimal FR-4 (7.6 mm²), and 2.0 W with 64 °C/W R_JA on large copper (645 mm²). It features f_T = 120 MHz and operates across −55 °C to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Withstands up to 100 V reverse collector-emitter voltage before breakdown, suitable for 48 V and lower bus applications.
I_C (continuous)	−2.0 A - Supports sustained 2 A load current in switching regulators and motor drivers without derating at 25 °C.
V_CE(sat) @ I_C=−0.1 A	−0.040 V - Enables <0.4 W conduction loss at 0.1 A, critical for efficiency in compact DC–DC converters.
h_FE @ I_C=−10 mA	150 min - Provides sufficient current gain for direct microcontroller or PMU base drive without buffer stages.
f_T	120 MHz - Supports high-frequency switching up to ~10–20 MHz in practical hard-switched topologies.
R_JA (large copper)	64 °C/W - Allows 2.0 W power dissipation with ≤128 °C rise above ambient on 645 mm² PCB copper area.
T_J range	−55 °C to +150 °C - Qualified for automotive instrument cluster and industrial control environments.

Pinout & Package

Package: SOT-223 (Case 318E, Style 1), surface-mount, 4-pin configuration with collector double-bonded (pins 2 and 4), emitter (pin 1), and base (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (E)	Emitter	Common reference terminal for PNP operation; connects to higher potential rail in high-side switch configurations.
Pins 2 & 4 (C)	Collector	Dual-collector layout improves current handling and thermal spreading; both pins must be connected to load return path.
Pin 3 (B)	Base	Control input requiring negative bias relative to emitter to turn on; compatible with standard logic-level drive when referenced correctly.

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	−0.040 V at −0.1 A enables >98% efficiency in low-voltage synchronous rectifier or LDO pass element roles.
AEC-Q101 qualified	Validated for automotive airbag and instrument cluster use per stress test requirements including HTOL and TC.
Linear h_FE vs. I_C	h_FE remains stable from −10 mA to −2.0 A, simplifying analog amplifier and precision current source design.
Pb-free, RoHS-compliant	Meets global environmental regulations; marked "1C200" with Pb-free indicator on top-side marking.
High f_T	120 MHz cutoff frequency supports fast switching transitions and reduces switching losses in SMPS designs.

Applications

DC–DC Converters	Portable Device Power Management
Use Scenario: Step-down regulation in smartphone PMICs delivering 1.8 V/3.3 V rails from single-cell Li-ion battery. IC Role / Device Role / Timing Role: Low-side PNP switch in asynchronous buck converter topology, replacing Schottky diode for reduced forward drop. Use Value: V_CE(sat) = −0.080 V at −0.5 A cuts conduction loss by >60% versus typical 0.3 V diode, extending battery runtime.	Use Scenario: Load switching for backlight LED drivers and USB port power enable in tablets and digital cameras. IC Role / Device Role / Timing Role: High-current, low-loss high-side switch controlled directly by PMU GPIO with no level-shifting circuitry. Use Value: h_FE ≥ 80 at −1.0 A allows direct drive from 1.8 V/3.3 V logic, eliminating gate driver ICs and reducing BOM count.
Automotive Instrument Clusters	Low-Voltage Motor Control
Use Scenario: Driving analog gauges and segment displays in vehicle dashboards operating from 12 V supply. IC Role / Device Role / Timing Role: Precision current sink for LED backlight dimming and stepper coil current limiting. Use Value: Linear h_FE and stable V_BE(sat) = −0.95 V support accurate analog current control over −40 °C to +125 °C.	Use Scenario: Commutation control in 5–12 V brush motors used in optical disc drives and cooling fans. IC Role / Device Role / Timing Role: Saturated switch in H-bridge half-bridge leg, handling bidirectional 1.5 A peak currents. Use Value: Dual-collector SOT-223 package sustains 3.0 A peak current with <1.2 V saturation margin at 125 °C ambient.

DC–DC Converters

Portable Device Power Management

Use Scenario: Step-down regulation in smartphone PMICs delivering 1.8 V/3.3 V rails from single-cell Li-ion battery.

IC Role / Device Role / Timing Role: Low-side PNP switch in asynchronous buck converter topology, replacing Schottky diode for reduced forward drop.

Use Value: V_CE(sat) = −0.080 V at −0.5 A cuts conduction loss by >60% versus typical 0.3 V diode, extending battery runtime.

Use Scenario: Load switching for backlight LED drivers and USB port power enable in tablets and digital cameras.

IC Role / Device Role / Timing Role: High-current, low-loss high-side switch controlled directly by PMU GPIO with no level-shifting circuitry.

Use Value: h_FE ≥ 80 at −1.0 A allows direct drive from 1.8 V/3.3 V logic, eliminating gate driver ICs and reducing BOM count.

Automotive Instrument Clusters

Low-Voltage Motor Control

Use Scenario: Driving analog gauges and segment displays in vehicle dashboards operating from 12 V supply.

IC Role / Device Role / Timing Role: Precision current sink for LED backlight dimming and stepper coil current limiting.

Use Value: Linear h_FE and stable V_BE(sat) = −0.95 V support accurate analog current control over −40 °C to +125 °C.

Use Scenario: Commutation control in 5–12 V brush motors used in optical disc drives and cooling fans.

IC Role / Device Role / Timing Role: Saturated switch in H-bridge half-bridge leg, handling bidirectional 1.5 A peak currents.

Use Value: Dual-collector SOT-223 package sustains 3.0 A peak current with <1.2 V saturation margin at 125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2955RLG	Higher V_CE(sat) (−1.2 V @ −4 A), TO-220 package, lower f_T (3 MHz)	Better suited for high-power linear regulators; unsuitable for high-frequency switching	Select only if thermal mass and mounting flexibility outweigh switching efficiency needs
ZTX951	SOT-89 package, V_CE(sat) = −0.25 V @ −1 A, h_FE = 100 min, no AEC-Q101 rating	Limited to consumer-grade portable electronics; not qualified for automotive environments	Choose for cost-sensitive non-automotive designs where AEC-Q101 compliance is unnecessary

Compared with MJD2955RLG and ZTX951, NSS1C200MZ4T1G uniquely balances ultra-low saturation voltage, automotive qualification, SMT scalability, and RF-capable bandwidth-making it optimal for space-constrained, high-efficiency, and mission-critical portable and automotive power nodes.

Availability

NSS1C200MZ4T1G is available at Aetrix Electronics and suitable for DC–DC converters, portable device power management, and automotive instrument clusters requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for NSS1C200MZ4T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power, analog, sensor, and connectivity solutions.

The e2PowerEdge family-including NSS1C200MZ4T1G-is designed specifically for high-efficiency, low-voltage switching in portable, automotive, and industrial power systems where minimizing conduction loss and enabling direct logic drive are primary objectives.

FAQ

What is the maximum continuous collector current rating for NSS1C200MZ4T1G?

The NSS1C200MZ4T1G has a maximum continuous collector current (I_C) rating of −2.0 A at T_A = 25 °C with adequate PCB copper (645 mm²). Derating applies above 25 °C per the 15.6 mW/°C spec in Note 2 of the datasheet. At 100 °C ambient, usable I_C drops to approximately −1.2 A under those thermal conditions. The NSS1C200MZ4T1G must be mounted on appropriate copper area to sustain rated current.

Is NSS1C200MZ4T1G qualified for automotive applications?

Yes, the NSS1C200MZ4T1G is AEC-Q101 qualified and PPAP capable, as confirmed in its datasheet Features section. It meets stress testing requirements for automotive use cases including airbag deployment circuits and instrument clusters. The NSV-prefix variant (NSV1C200MZ4T1G) denotes additional site-specific automotive controls, but the NSS1C200MZ4T1G itself carries full AEC-Q101 certification per onsemi documentation.

What is the typical V_CE(sat) of NSS1C200MZ4T1G at 2.0 A collector current?

The typical V_CE(sat) of NSS1C200MZ4T1G at I_C = −2.0 A and I_B = −0.200 A is −0.220 V, with a maximum of −0.300 V under pulsed conditions. This value is measured at T_A = 25 °C and reflects the device's ultra-low saturation characteristic. At elevated temperatures, V_CE(sat) increases slightly but remains below −0.35 V up to 125 °C junction temperature, as shown in Figure 6 of the NSS1C200MZ4T1G datasheet.

Can NSS1C200MZ4T1G be driven directly by a 3.3 V microcontroller GPIO?

Yes, NSS1C200MZ4T1G can be driven directly by a 3.3 V microcontroller GPIO when configured as a low-side switch with emitter grounded. With V_BE(on) = −0.850 V and h_FE ≥ 50 at −2.0 A, a 3.3 V output sourcing ~0.2 A base current (via series resistor) achieves full saturation. For high-side configuration, a level-shifting circuit is required since the base must be driven negative relative to the emitter rail. The NSS1C200MZ4T1G's linear h_FE simplifies such drive design.

What is the thermal resistance junction-to-ambient (R_JA) for NSS1C200MZ4T1G on standard PCB layout?

The NSS1C200MZ4T1G exhibits R_JA = 155 °C/W on FR-4 with 7.6 mm² copper (Note 1), and R_JA = 64 °C/W on FR-4 with 645 mm² copper (Note 2). These values assume 1 oz. copper thickness. Layouts using internal planes or thermal vias may achieve intermediate values. The 64 °C/W figure enables 2.0 W continuous dissipation at 25 °C ambient, making the NSS1C200MZ4T1G viable for high-current SMT power switching without heatsinks in properly designed boards.

NSS1C200MZ4T1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 220mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 500mA, 2V

Power - Max:: 800 mW

Frequency - Transition:: 120MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223 (TO-261)

NSS1C200MZ4T1G FAQ

1.How can I place an order for NSS1C200MZ4T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS1C200MZ4T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS1C200MZ4T1G reliable?

The price and inventory of NSS1C200MZ4T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS1C200MZ4T1G is usually 5 days.

3.What payment methods are accepted for NSS1C200MZ4T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS1C200MZ4T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS1C200MZ4T1G?

NSS1C200MZ4T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS1C200MZ4T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS1C200MZ4T1G?

For technical support, including NSS1C200MZ4T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS1C200MZ4T1G requirements.

6.How does Aetrix verify that NSS1C200MZ4T1G is sourced from the original manufacturer or authorized distributors?

All NSS1C200MZ4T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS1C200MZ4T1G meets industry standards.

7.What is the process for return or replacement of NSS1C200MZ4T1G?

All NSS1C200MZ4T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS1C200MZ4T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS1C200MZ4T1G part is unused and in its original packaging.

Return procedure for NSS1C200MZ4T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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