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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS1C200MZ4T3G

Name: NSS1C200MZ4T3G
Brand: onsemi
SKU: NSS1C200MZ4T3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS1C200MZ4T3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: NSS1C200MZ4T3G.pdf

Description:: TRANS PNP 100V 2A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSS1C200MZ4T3G from onsemi is a PNP bipolar junction transistor designed for high-efficiency, low-voltage switching in power management circuits. It delivers −100 V V_CEO, −2.0 A continuous collector current, and ultra-low −0.040 V V_CE(sat) at −0.1 A/−0.01 A drive, enabling minimal conduction loss in DC–DC converters and battery-powered motor controls.

For engineers reviewing the NSS1C200MZ4T3G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at high I_C, AEC-Q101 qualification status, thermal resistance under defined PCB layouts, and SOT-223 package compatibility with high-current surface-mount thermal management.

Technical Context

This device belongs to onsemi's e2PowerEdge family of low-saturation-voltage PNP transistors. Its design emphasizes direct drive from PMU outputs via high h_FE (150 min at −10 mA) and stable linear gain across operating currents, supporting both switching and analog amplifier roles.

It operates within −55 °C to +150 °C junction temperature range and features dual thermal ratings: 800 mW (R_JA = 155 °C/W) on minimal FR-4 (7.6 mm²), and 2.0 W (R_JA = 64 °C/W) on extended copper (645 mm²), reflecting layout-dependent power handling capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - supports high-side switching in 48 V and 60 V industrial bus systems without breakdown risk
I_C (continuous)	−2.0 A - enables single-device control of medium-power loads like fan drivers or solenoid interfaces
V_CE(sat) @ I_C = −2.0 A	−0.220 V - reduces conduction loss to < 440 mW, critical for thermally constrained portable designs
h_FE @ I_C = −1.0 A	80 min - ensures reliable saturation with modest base drive, easing MCU GPIO or PMU output loading
f_T	120 MHz - supports fast switching up to ~1–2 MHz in synchronous buck or flyback topologies
R_JA (645 mm²)	64 °C/W - allows 2.0 W dissipation with ≤128 °C rise above ambient, suitable for compact heatsinkless PCBs

Pinout & Package

Package: SOT-223 (Case 318E, Style 1), surface-mount, 4-pin, Pb-free, RoHS-compliant. Thermal pad (pins 2 & 4) is electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to turn on PNP; requires negative voltage relative to emitter to conduct
2 & 4 (Collector)	High-current output / thermal path	Dual-collector configuration improves current handling and provides low-impedance thermal conduction to PCB copper
3 (Emitter)	Reference terminal / supply rail connection	Connected to higher potential (e.g., battery +); defines common reference for base drive and load return

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including airbag deployment and instrument clusters per stress test requirements
Ultra-low V_CE(sat)	As low as −0.040 V at light load enables >95% efficiency in low-V_IN DC–DC stages
High h_FE linearity	h_FE remains ≥50 up to −2.0 A, supporting predictable analog gain and stable switching thresholds
Thermally enhanced layout	Dual collector pins and exposed thermal pad allow 2.0 W dissipation on standard FR-4 with 645 mm² copper

Applications

Battery-Powered DC–DC Converters	Automotive Instrument Clusters
Use Scenario: Step-down conversion in smartphones and digital cameras where input is 3.7–4.2 V Li-ion and output is 1.2–3.3 V for SoC or display logic. IC Role / Device Role / Timing Role: Main PNP switch in asynchronous buck topology, conducting during low-side FET off-time to complete current path. Use Value: −0.080 V V_CE(sat) at −0.5 A cuts conduction loss by >60% vs. standard PNP, extending runtime and reducing thermal stress.	Use Scenario: Driving backlight LEDs and stepper motors for gauges in vehicle dashboards operating from 12 V battery with cold-crank down to 6 V. IC Role / Device Role / Timing Role: High-side current sink for LED strings and low-side driver for unipolar stepper coils. Use Value: AEC-Q101 qualification and −100 V V_CEO ensure robustness against load-dump transients and long-term reliability in 15-year automotive service life.
Portable Motor Control	Industrial Power Management
Use Scenario: Bidirectional control of small DC motors in cordless power tools and disc drives using H-bridge configurations with discrete PNP/NPN pairs. IC Role / Device Role / Timing Role: Upper-leg PNP switch in half-bridge, sourcing current to motor when activated. Use Value: −0.125 V V_CE(sat) at −1.0 A limits heat generation in sealed enclosures, eliminating need for forced cooling in handheld tools.	Use Scenario: Overcurrent protection and load switching in programmable logic controllers (PLCs) and industrial I/O modules with 24 V DC supply rails. IC Role / Device Role / Timing Role: Solid-state relay replacement for 2 A switching loads, controlled by microcontroller GPIO with level-shifting. Use Value: 80 h_FE at full load ensures saturation with ≤25 mA base drive, compatible with standard 3.3 V/5 V logic outputs without external drivers.

Battery-Powered DC–DC Converters

Automotive Instrument Clusters

Use Scenario: Step-down conversion in smartphones and digital cameras where input is 3.7–4.2 V Li-ion and output is 1.2–3.3 V for SoC or display logic.

IC Role / Device Role / Timing Role: Main PNP switch in asynchronous buck topology, conducting during low-side FET off-time to complete current path.

Use Value: −0.080 V V_CE(sat) at −0.5 A cuts conduction loss by >60% vs. standard PNP, extending runtime and reducing thermal stress.

Use Scenario: Driving backlight LEDs and stepper motors for gauges in vehicle dashboards operating from 12 V battery with cold-crank down to 6 V.

IC Role / Device Role / Timing Role: High-side current sink for LED strings and low-side driver for unipolar stepper coils.

Use Value: AEC-Q101 qualification and −100 V V_CEO ensure robustness against load-dump transients and long-term reliability in 15-year automotive service life.

Portable Motor Control

Industrial Power Management

Use Scenario: Bidirectional control of small DC motors in cordless power tools and disc drives using H-bridge configurations with discrete PNP/NPN pairs.

IC Role / Device Role / Timing Role: Upper-leg PNP switch in half-bridge, sourcing current to motor when activated.

Use Value: −0.125 V V_CE(sat) at −1.0 A limits heat generation in sealed enclosures, eliminating need for forced cooling in handheld tools.

Use Scenario: Overcurrent protection and load switching in programmable logic controllers (PLCs) and industrial I/O modules with 24 V DC supply rails.

IC Role / Device Role / Timing Role: Solid-state relay replacement for 2 A switching loads, controlled by microcontroller GPIO with level-shifting.

Use Value: 80 h_FE at full load ensures saturation with ≤25 mA base drive, compatible with standard 3.3 V/5 V logic outputs without external drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2955G	Higher V_CEO (−70 V), higher V_CE(sat) (−1.2 V @ −4 A), TO-220 package	Requires heatsink; unsuitable for space-constrained SMT designs	Select when higher surge tolerance and legacy through-hole assembly are required
ZTX951	Lower I_C (−1.5 A), lower V_CE(sat) (−0.25 V @ −1 A), SOT-89 package	Limited thermal mass; max 1.5 W dissipation on large copper	Select when footprint size is critical but peak current demand is ≤1.5 A

Compared with MJD2955G and ZTX951, the NSS1C200MZ4T3G uniquely balances SMT manufacturability, 2.0 A capability, and ultra-low −0.220 V V_CE(sat) at full load-making it optimal for high-density, thermally sensitive, and automotive-grade power stages.

Availability

NSS1C200MZ4T3G is available at Aetrix Electronics and suitable for battery-powered DC–DC converters, automotive instrument clusters, and industrial PLC I/O modules requiring stable component supply and long-term lifecycle support.

Supply support for NSS1C200MZ4T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and automotive ICs.

The e2PowerEdge family, which includes NSS1C200MZ4T3G, was engineered specifically for high-efficiency, low-voltage switching in portable, automotive, and industrial power systems where minimizing conduction loss and simplifying drive circuitry are critical.

FAQ

What is the maximum continuous collector current rating for NSS1C200MZ4T3G?

The NSS1C200MZ4T3G has a maximum continuous collector current (I_C) rating of −2.0 A at T_A = 25 °C with sufficient PCB copper area (645 mm²). Derating applies above 25 °C per the 15.6 mW/°C slope specified in Note 2 of the datasheet. At elevated ambient temperatures or reduced copper area, the usable I_C must be reduced to maintain junction temperature below +150 °C. The NSS1C200MZ4T3G datasheet confirms this rating under defined thermal conditions.

Is NSS1C200MZ4T3G qualified for automotive applications?

Yes, the NSS1C200MZ4T3G is AEC-Q101 qualified and PPAP capable, as explicitly stated in its datasheet features section. This qualification covers stress testing for temperature cycling, humidity, mechanical shock, and ESD-making it suitable for automotive subsystems such as airbag deployment circuits and instrument cluster motor drivers. The NSV-prefix variant (NSV1C200MZ4T3G) is designated for automotive-specific site and control requirements, while the NSS1C200MZ4T3G meets the same reliability standard.

What is the typical V_CE(sat) of NSS1C200MZ4T3G at 2.0 A collector current?

The typical V_CE(sat) of NSS1C200MZ4T3G at I_C = −2.0 A and I_B = −0.200 A is −0.220 V, as specified in the Electrical Characteristics table (Note 3, pulsed condition). This value reflects actual measured performance under standardized test conditions and directly determines conduction loss: at −2.0 A, power dissipation in saturation is approximately 440 mW. The NSS1C200MZ4T3G datasheet lists this parameter with min/typ/max values across operating conditions.

Which package does NSS1C200MZ4T3G use, and how many terminals does it have?

NSS1C200MZ4T3G uses the SOT-223 package (Case 318E, Style 1), a 4-terminal surface-mount outline with pins numbered 1 (Base), 2 & 4 (Collector, internally tied), and 3 (Emitter). Pin 2 and Pin 4 are both collector connections and serve as primary thermal paths to the PCB. The marking "1C200" appears on the top surface, and the device is Pb-free and RoHS compliant. This package configuration is confirmed in the datasheet's Pin Assignment and Marking Diagram sections.

Does NSS1C200MZ4T3G support analog amplifier operation?

Yes, NSS1C200MZ4T3G supports analog amplifier operation due to its linear DC current gain (h_FE) characteristic, which ranges from 150 (at −10 mA) down to 50 (at −2.0 A) with minimal variation across bias points. The datasheet explicitly states that the "Linear Gain (Beta) makes them ideal components in analog amplifiers." This behavior, combined with low noise and stable V_BE(on) (−0.850 V), enables use in low-frequency signal amplification stages where predictable transconductance is required. The NSS1C200MZ4T3G electrical characteristics confirm h_FE linearity across multiple I_C levels.

NSS1C200MZ4T3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 220mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 500mA, 2V

Power - Max:: 800 mW

Frequency - Transition:: 120MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223 (TO-261)

NSS1C200MZ4T3G FAQ

1.How can I place an order for NSS1C200MZ4T3G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS1C200MZ4T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS1C200MZ4T3G reliable?

The price and inventory of NSS1C200MZ4T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS1C200MZ4T3G is usually 5 days.

3.What payment methods are accepted for NSS1C200MZ4T3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS1C200MZ4T3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS1C200MZ4T3G?

NSS1C200MZ4T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS1C200MZ4T3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS1C200MZ4T3G?

For technical support, including NSS1C200MZ4T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS1C200MZ4T3G requirements.

6.How does Aetrix verify that NSS1C200MZ4T3G is sourced from the original manufacturer or authorized distributors?

All NSS1C200MZ4T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS1C200MZ4T3G meets industry standards.

7.What is the process for return or replacement of NSS1C200MZ4T3G?

All NSS1C200MZ4T3G units undergo pre-shipment inspection (PSI). If there is an issue with NSS1C200MZ4T3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS1C200MZ4T3G part is unused and in its original packaging.

Return procedure for NSS1C200MZ4T3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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