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onsemi NSS1C201MZ4T3G
- Part No.:
- NSS1C201MZ4T3G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
NSS1C201MZ4T3G.pdf
- Description:
- TRANS NPN 100V 2A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:3,440
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Product details
Overview
NSS1C201MZ4T3G from onsemi is a 100 V, 2.0 A NPN bipolar junction transistor optimized for low-saturation-voltage switching in portable power management and DC–DC converters. It delivers VCE(sat) = 0.030 V at IC = 0.1 A / IB = 0.01 A, hFE = 150 (min) at IC = 10 mA, and fT = 100 MHz - enabling high-efficiency, high-speed control in battery-powered motor drives and PMU-driven load switching.
For engineers reviewing the NSS1C201MZ4T3G datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance across temperature, SOT-223 thermal derating behavior, hFE linearity for analog gain stages, and AEC-Q101 qualification status for automotive instrument cluster use.
Technical Context
This e2PowerEdge NPN transistor uses epitaxial base construction to achieve ultra-low VCE(sat) and high current gain stability across −55 °C to +150 °C. Its 100 V VCEO rating and 2.0 A continuous collector current support primary-side switching in buck regulators and solenoid drivers where voltage headroom and thermal margin are constrained.
The device exhibits linear hFE vs. IC behavior (150–40 over 10 mA to 2.0 A), making it suitable for both digital switching and analog amplification. Cibo = 305 pF and Cobo = 22 pF at specified bias points enable predictable high-frequency turn-off in PWM circuits up to 100 MHz fT.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - supports operation in 48 V and 60 V bus systems with safety margin against transients. |
| IC (cont.) | 2.0 A - enables direct drive of small motors, LED strings, or power rails without external buffer stages. |
| VCE(sat) @ 1 A | 0.100 V - reduces conduction loss to ≤100 mW at 1 A, critical for thermally constrained SOT-223 PCB layouts. |
| hFE @ 10 mA | 150 (min) - allows direct interface with low-current PMU GPIOs (e.g., 5–10 mA drive capability). |
| fT | 100 MHz - ensures stable switching in PWM frequencies up to 500 kHz with adequate gain margin. |
| RJA (FR-4, 645 mm²) | 64 °C/W - defines thermal limit of 2.0 W dissipation at TA = 25 °C, requiring ≥645 mm² copper pour for full-rated operation. |
Pinout & Package
Package: SOT-223 (Case 318E, Style 1), surface-mount, 4-pin configuration with collector double-bonded (pins 2 and 4), emitter (pin 1), and base (pin 3). Thermal pad on underside enhances heat transfer to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current return path for collector-emitter conduction | Connected to ground or low-side reference; must maintain low-impedance return to minimize VBE error. |
| 2 & 4 (Collector) | Main current output terminal (dual-pin for thermal and current handling) | Both pins electrically common; used together to reduce current density and thermal resistance in high-IC operation. |
| 3 (Base) | Control input for forward-biased BJT operation | Requires current-limited drive (e.g., series resistor) to set IB = IC/hFE; not voltage-driven like MOSFET gate. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 0.030 V at 0.1 A enables >99% efficiency in low-voltage (<12 V) switching nodes with minimal heatsinking. |
| High hFE linearity | hFE remains ≥80 up to 1.0 A, supporting analog amplifier designs without gain compression. |
| AEC-Q101 qualified (NSV variant only) | NSS1C201MZ4T3G shares die and process with NSV1C201MZ4 - same electrical specs but non-automotive marking and PPAP support. |
| Pb-free, RoHS-compliant SOT-223 | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), compatible with standard reflow profiles. |
Applications
| DC–DC Converter Switching | Portable Device Power Management |
|---|---|
|
Use Scenario: High-efficiency synchronous buck converter in smartphone PMIC subsystems. IC Role / Device Role / Timing Role: Low-side switch controlling inductor current discharge path during PWM off-time. Use Value: VCE(sat) ≤ 0.100 V at 1 A limits conduction loss to <100 mW, reducing thermal load on compact PCBs. |
Use Scenario: Load switching for USB-C port power delivery and accessory detection circuits. IC Role / Device Role / Timing Role: Discrete NPN switch enabling or disabling 5 V/3.3 V rails under microcontroller GPIO control. Use Value: hFE ≥ 150 at 10 mA allows direct drive from 3.3 V MCU outputs without level-shifting or buffering. |
| Low-Voltage Motor Control | Automotive Instrument Cluster |
|
Use Scenario: Bidirectional 12 V brushed motor driver in HDD actuator positioning or fan control modules. IC Role / Device Role / Timing Role: One quadrant of H-bridge (low-side switch) with fast turn-on/off enabled by 100 MHz fT. Use Value: Cibo = 305 pF and Cobo = 22 pF ensure predictable 100 ns–500 ns switching transitions at 20–100 kHz PWM. |
Use Scenario: Airbag deployment circuit trigger stage and backlight dimming control in automotive dashboards. IC Role / Device Role / Timing Role: Safety-critical switch driving pyro fuse or LED current sink under ASIL-B system supervision. Use Value: 100 V VCEO withstands load-dump transients up to 120 V; TJ range −55 °C to +150 °C meets AEC-Q101 ambient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2012ZTA | VCEO = 60 V, VCE(sat) = 0.17 V @ 1 A - lower voltage rating, higher saturation loss. | Not suitable for 48 V bus or load-dump tolerant designs; limited to ≤36 V systems. | Select when cost sensitivity outweighs voltage margin and thermal performance. |
| MJD122G | SOT-223 package, VCEO = 100 V, but VCE(sat) = 0.5 V @ 1 A - 5× higher conduction loss. | Acceptable for low-duty-cycle or low-frequency switching where thermal budget permits. | Prefer when legacy design reuse is required and efficiency is secondary to availability. |
Compared with ZXTN2012ZTA and MJD122G, NSS1C201MZ4T3G provides superior conduction efficiency (0.100 V vs. 0.17–0.5 V) and wider safe operating area at 100 V, making it optimal for thermally constrained, high-reliability portable and automotive power switches.
Availability
NSS1C201MZ4T3G is available at Aetrix Electronics and suitable for DC–DC converters, portable device power management, and low-voltage motor control requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for NSS1C201MZ4T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and automotive ICs.
NSS1C201MZ4T3G belongs to the e2PowerEdge family - engineered specifically for low-voltage, high-current switching in space-constrained portable and automotive applications where ultra-low VCE(sat) and thermal robustness are essential.
FAQ
What is the maximum continuous collector current for NSS1C201MZ4T3G?
The NSS1C201MZ4T3G has a maximum continuous collector current (IC) of 2.0 A at TA = 25 °C with sufficient PCB copper area (645 mm², 1 oz). Derating applies above 25 °C at 15.6 mW/°C. At 100 °C ambient, usable IC drops to approximately 1.1 A under those thermal conditions. The NSS1C201MZ4T3G datasheet specifies this in the Thermal Characteristics table (Note 2).
Is NSS1C201MZ4T3G AEC-Q101 qualified?
No - NSS1C201MZ4T3G is the commercial-grade variant. The NSV1C201MZ4T3G part carries the NSV prefix and is AEC-Q101 qualified with PPAP documentation. Both share identical die, electrical specs, and SOT-223 packaging, but only the NSV version meets automotive qualification requirements. NSS1C201MZ4T3G is intended for industrial and consumer applications.
What is the typical VCE(sat) of NSS1C201MZ4T3G at 2.0 A collector current?
The typical VCE(sat) of NSS1C201MZ4T3G at IC = 2.0 A and IB = 0.200 A is 0.180 V, per the Electrical Characteristics table. The maximum guaranteed value is 0.250 V under pulsed conditions (300 µs, ≤2% duty cycle). This low saturation voltage directly reduces power loss to ≤360 mW at full rated current, supporting compact thermal design.
Can NSS1C201MZ4T3G be used in analog amplifier configurations?
Yes - the NSS1C201MZ4T3G exhibits linear hFE behavior from 10 mA to 1.0 A (150 → 80), and its fT = 100 MHz supports audio and low-MHz signal amplification. The datasheet explicitly states suitability for analog amplifiers due to "Linear Gain (Beta)", and VBE(on) = 0.850 V at IC = 1.0 A enables predictable biasing. Designers should verify stability with appropriate emitter degeneration in the target circuit.
What is the thermal resistance junction-to-ambient (RJA) for NSS1C201MZ4T3G on a standard FR-4 board?
NSS1C201MZ4T3G has two RJA ratings depending on PCB layout: 155 °C/W for minimal copper (7.6 mm², 1 oz) and 64 °C/W for enhanced thermal relief (645 mm², 1 oz). The latter enables 2.0 W total dissipation at TA = 25 °C. Layout guidelines in the datasheet recommend using the full thermal pad and multiple vias to internal ground planes to achieve the 64 °C/W value in production designs.
NSS1C201MZ4T3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 180mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 500mA, 2V
- Power - Max:
- 800 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223 (TO-261)
NSS1C201MZ4T3G FAQ
1.How can I place an order for NSS1C201MZ4T3G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS1C201MZ4T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS1C201MZ4T3G reliable?
The price and inventory of NSS1C201MZ4T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS1C201MZ4T3G is usually 5 days.
3.What payment methods are accepted for NSS1C201MZ4T3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS1C201MZ4T3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS1C201MZ4T3G?
NSS1C201MZ4T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS1C201MZ4T3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS1C201MZ4T3G?
For technical support, including NSS1C201MZ4T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS1C201MZ4T3G requirements.
6.How does Aetrix verify that NSS1C201MZ4T3G is sourced from the original manufacturer or authorized distributors?
All NSS1C201MZ4T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS1C201MZ4T3G meets industry standards.
7.What is the process for return or replacement of NSS1C201MZ4T3G?
All NSS1C201MZ4T3G units undergo pre-shipment inspection (PSI). If there is an issue with NSS1C201MZ4T3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS1C201MZ4T3G part is unused and in its original packaging.
Return procedure for NSS1C201MZ4T3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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