Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS20200LT1G

Name: NSS20200LT1G
Brand: onsemi
SKU: NSS20200LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NSS20200LT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: NSS20200LT1G.pdf

Description:: TRANS PNP 20V 2A SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:17,384

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NSS20200LT1G from onsemi is a PNP bipolar junction transistor (BJT) optimized for low-voltage, high-speed switching with −20 V V_CEO, −4.0 A I_CM, and ultra-low −0.065 V typical V_CE(sat) at −1.0 A/−0.100 A drive. It serves as a compact, energy-efficient power switch in DC–DC converters and battery-powered portable electronics.

For engineers reviewing the NSS20200LT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, SOT-23 package compatibility, −0.065 V V_CE(sat) at rated current, and suitability for direct PMU-output drive in space-constrained power management designs.

Technical Context

This PNP transistor operates in saturation mode for efficient switching, with guaranteed V_CE(sat) ≤ −0.130 V at −2.0 A/−0.200 A and linear h_FE ranging from 150 to 300 across −10 mA to −2.0 A collector currents. Its f_T of 100 MHz supports fast turn-on/turn-off transitions.

Thermal performance is defined for two PCB layouts: R_JA = 270 °C/W (100 mm² copper) and 230 °C/W (500 mm² copper), enabling thermal-aware layout decisions. The device sustains operation from −55 °C to +150 °C junction temperature with HBM Class 3B ESD rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum safe collector-emitter voltage before breakdown; defines usable supply rail headroom in low-voltage systems.
I_CM	−4.0 A - Peak pulsed collector current capability; supports surge handling in motor control and power-up transients.
V_CE(sat) (typ)	−0.065 V at −1.0 A/−0.100 A - Enables <130 mW conduction loss at 1 A, critical for efficiency in portable battery applications.
h_FE	150–300 - High and stable DC current gain ensures reliable saturation with minimal base drive current from low-power controllers.
f_T	100 MHz - Supports switching frequencies up to ~10–20 MHz in optimized circuits, suitable for high-frequency DC–DC topologies.
R_JA	230 °C/W (500 mm² Cu) - Quantifies thermal resistance for thermal design; enables 540 mW continuous dissipation at 25 °C ambient.
T_J Range	−55 °C to +150 °C - Validated operation across automotive and industrial ambient extremes without derating.

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm, with 1.90 mm lead pitch. RoHS-compliant, Pb-free, halogen-free/BFR-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires −0.100 A drive current to saturate at −1.0 A collector load per datasheet test condition.
2	Emitter	Common reference terminal for PNP configuration; connected to higher potential (e.g., V_CC) in high-side switch implementations.
3	Collector	Switched output node; sinks current to ground or lower-potential rail when active; handles up to −4.0 A peak.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including airbag deployment and instrument clusters; PPAP-capable manufacturing flow.
Ultra-low V_CE(sat)	−0.065 V typical at −1.0 A enables >99% conduction efficiency in 3.3 V or 5 V rail switching, reducing heat generation.
High h_FE linearity	h_FE ≥ 150 at −2.0 A supports analog amplifier use and simplifies base drive design in digital switching applications.
Direct PMU drive support	Low required base current (−0.100 A @ −1.0 A IC) allows interface with standard power management unit outputs without external buffers.
Robust thermal margin	150 °C max T_J and 230 °C/W R_JA (500 mm² Cu) enable reliable operation in enclosed, thermally constrained enclosures.

Applications

DC–DC Converter Switching	Battery-Powered Portable Electronics
Use Scenario: High-efficiency synchronous or pseudo-synchronous buck converter in smartphones and PDAs. IC Role / Device Role / Timing Role: Low-side PNP switch replacing traditional N-channel MOSFETs where gate drive complexity or cost must be minimized. Use Value: −0.065 V V_CE(sat) reduces conduction loss by >40% vs. comparable discrete BJTs, extending battery runtime.	Use Scenario: Power sequencing and load switching in MP3 players, digital cameras, and cordless phones. IC Role / Device Role / Timing Role: Compact, low-V_CE(sat) power switch controlling subsystem rails (e.g., display backlight, audio codec). Use Value: SOT-23 footprint and −2.0 A continuous rating allow single-device replacement of larger packages, saving board area.
Automotive Instrument Clusters	Low-Voltage Motor Control
Use Scenario: LED driver and solenoid control in dashboard displays and warning indicators. IC Role / Device Role / Timing Role: AEC-Q101-qualified PNP switch delivering precise current control under wide temperature and vibration conditions. Use Value: −55 °C to +150 °C operation and HBM Class 3B ESD rating ensure reliability in harsh automotive environments.	Use Scenario: Directional control and braking in disc/tape drive spindle motors and actuator coils. IC Role / Device Role / Timing Role: Fast-switching PNP transistor enabling PWM-based speed regulation with <60 ns delay and <130 ns fall time. Use Value: 100 MHz f_T and sub-500 ns total switching time support 10–50 kHz PWM frequencies without significant losses.

DC–DC Converter Switching

Battery-Powered Portable Electronics

Use Scenario: High-efficiency synchronous or pseudo-synchronous buck converter in smartphones and PDAs.

IC Role / Device Role / Timing Role: Low-side PNP switch replacing traditional N-channel MOSFETs where gate drive complexity or cost must be minimized.

Use Value: −0.065 V V_CE(sat) reduces conduction loss by >40% vs. comparable discrete BJTs, extending battery runtime.

Use Scenario: Power sequencing and load switching in MP3 players, digital cameras, and cordless phones.

IC Role / Device Role / Timing Role: Compact, low-V_CE(sat) power switch controlling subsystem rails (e.g., display backlight, audio codec).

Use Value: SOT-23 footprint and −2.0 A continuous rating allow single-device replacement of larger packages, saving board area.

Automotive Instrument Clusters

Low-Voltage Motor Control

Use Scenario: LED driver and solenoid control in dashboard displays and warning indicators.

IC Role / Device Role / Timing Role: AEC-Q101-qualified PNP switch delivering precise current control under wide temperature and vibration conditions.

Use Value: −55 °C to +150 °C operation and HBM Class 3B ESD rating ensure reliability in harsh automotive environments.

Use Scenario: Directional control and braking in disc/tape drive spindle motors and actuator coils.

IC Role / Device Role / Timing Role: Fast-switching PNP transistor enabling PWM-based speed regulation with <60 ns delay and <130 ns fall time.

Use Value: 100 MHz f_T and sub-500 ns total switching time support 10–50 kHz PWM frequencies without significant losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT2907ALT1G	V_CE(sat) = −0.15 V (typ) at −500 mA; h_FE = 100–300; no AEC-Q101 qualification.	Lacks automotive qualification and has 2.3× higher V_CE(sat) at same current - less efficient in high-current portable apps.	Choose for cost-sensitive non-automotive consumer designs where thermal budget permits higher saturation loss.
ZXTN2012ZTA	V_CE(sat) = −0.12 V (typ) at −1.0 A; SOT-23 package; h_FE = 100–250; not AEC-Q101 qualified.	Higher V_CE(sat) and narrower temperature range (−55 °C to +150 °C not validated); no PPAP support.	Select when needing slightly higher I_C rating (−2.5 A) but can accept reduced efficiency and no automotive traceability.

Compared with MMBT2907ALT1G and ZXTN2012ZTA, the NSS20200LT1G delivers superior conduction efficiency (−0.065 V vs. −0.12 to −0.15 V), guaranteed AEC-Q101 compliance, and tighter h_FE consistency-making it the preferred choice for thermally constrained, automotive-grade, or high-efficiency portable power switching.

Availability

NSS20200LT1G is available at Aetrix Electronics and suitable for DC–DC converters, battery-powered portable electronics, and automotive instrument clusters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for NSS20200LT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The NSS20200LT1G belongs to onsemi's e2PowerEdge family of low-V_CE(sat) transistors, designed specifically for high-efficiency, space-constrained switching in portable and automotive power systems.

FAQ

What is the maximum continuous collector current rating for the NSS20200LT1G?

The NSS20200LT1G has a maximum continuous collector current (I_C) rating of −2.0 A at T_A = 25 °C. This rating assumes proper PCB thermal management-specifically, 500 mm² of 1 oz. copper trace area, which yields a thermal resistance of 230 °C/W and allows 540 mW total dissipation. Exceeding −2.0 A continuously without enhanced cooling risks thermal runaway.

Is the NSS20200LT1G suitable for automotive applications?

Yes, the NSS20200LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications such as airbag deployment circuits and instrument cluster power switching. Its −55 °C to +150 °C operating junction temperature range, HBM Class 3B ESD rating, and controlled manufacturing process meet stringent automotive reliability requirements.

What is the typical V_CE(sat) of the NSS20200LT1G at 1.0 A collector current?

The typical V_CE(sat) of the NSS20200LT1G is −0.065 V at −1.0 A collector current and −0.100 A base current, per the datasheet's Electrical Characteristics table. This ultra-low saturation voltage directly reduces conduction losses and improves system efficiency in battery-powered and thermally sensitive applications.

Does the NSS20200LT1G have a known pinout configuration in the SOT-23 package?

Yes, the NSS20200LT1G uses Style 6 pinout for the SOT-23 package: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This configuration is explicitly confirmed in the onsemi mechanical drawings and marking diagram for NSS20200LT1G and NSV20200LT1G, and is consistent across all e2PowerEdge PNP devices in this family.

How does the NSS20200LT1G compare to standard general-purpose PNP transistors in terms of switching speed?

The NSS20200LT1G offers significantly faster switching than standard PNP transistors, with documented values of t_d = 60 ns, t_r = 120 ns, t_s = 300 ns, and t_f = 130 ns at −15 V V_CC and −750 mA I_C. Its 100 MHz f_T further confirms suitability for high-frequency switching applications where conventional BJTs typically fall below 50 MHz.

NSS20200LT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 180mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 500mA, 2V

Power - Max:: 460 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

NSS20200LT1G FAQ

1.How can I place an order for NSS20200LT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS20200LT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS20200LT1G reliable?

The price and inventory of NSS20200LT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS20200LT1G is usually 5 days.

3.What payment methods are accepted for NSS20200LT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS20200LT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS20200LT1G?

NSS20200LT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS20200LT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS20200LT1G?

For technical support, including NSS20200LT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS20200LT1G requirements.

6.How does Aetrix verify that NSS20200LT1G is sourced from the original manufacturer or authorized distributors?

All NSS20200LT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS20200LT1G meets industry standards.

7.What is the process for return or replacement of NSS20200LT1G?

All NSS20200LT1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS20200LT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS20200LT1G part is unused and in its original packaging.

Return procedure for NSS20200LT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…