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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS20200W6T1G

Name: NSS20200W6T1G
Brand: onsemi
SKU: NSS20200W6T1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS20200W6T1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: NSS20200W6T1G.pdf

Description:: TRANS PNP 20V 2A SC-88/SC70-6

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Product details

Overview

NSS20200W6T1G from onsemi is a PNP bipolar junction transistor in the e2PowerEdge family, designed for low-voltage, high-speed switching with ultra-low V_CE(sat) of 10 mV at I_C = −0.1 A and I_B = −0.01 A. It delivers −2.0 A continuous collector current, −3.0 A peak current, and operates up to +150°C junction temperature. It is used in DC–DC converters and battery-powered portable electronics including smartphones, digital cameras, and MP3 players.

For engineers reviewing the NSS20200W6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at high current, thermal resistance (R_JA = 225°C/W on 500 mm² PCB), SC−88 package compatibility, and guaranteed h_FE ≥ 160 at I_C = −2.0 A.

Technical Context

This PNP transistor uses silicon planar epitaxial construction optimized for saturation-mode switching. Its linear gain (h_FE) remains stable across I_C = −10 mA to −2.0 A, enabling direct drive from PMU control outputs without external amplification. The device features low input capacitance (C_ibo ≤ 330 pF) and output capacitance (C_obo ≤ 90 pF), supporting fast switching with t_r = 100 ns and t_f = 125 ns under specified test conditions.

Thermal design is supported by two validated R_JA values: 293°C/W on minimal 100 mm² copper and 225°C/W on enhanced 500 mm² copper - both measured per JEDEC JESD51-7. The SC−88 package (2.00 × 1.25 × 0.90 mm) enables high-density placement while maintaining safe operating area (SOA) compliance up to 10 A·V at 1 ms pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum reverse-biased collector-emitter voltage before breakdown; defines safe blocking capability in PNP switch configurations.
I_C (cont.)	−2.0 A - Continuous DC collector current rating; determines maximum steady-state load-handling capacity in power management circuits.
V_CE(sat)	−0.010 V @ I_C = −0.1 A, I_B = −0.01 A - Ultra-low saturation voltage minimizes conduction loss and heat generation in high-efficiency switches.
h_FE	160 min @ I_C = −2.0 A - Guaranteed minimum DC current gain ensures reliable base drive margin even at full rated current.
R_JA	225°C/W - Thermal resistance on 500 mm² copper; enables 555 mW dissipation at T_A = 25°C, critical for thermally constrained PCB layouts.
f_T	100 MHz - Transition frequency confirms suitability for high-speed switching applications up to several tens of MHz.
Package	SC−88 (SOT−363) - 6-pin miniature surface-mount package with 0.65 mm pitch; supports automated assembly and space-constrained designs.

Pinout & Package

Package: SC−88 (SOT−363), 6-pin, Pb-free, dimensions 2.00 × 1.25 × 0.90 mm, 0.65 mm lead pitch. Case outline 419B, Style 20.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Collector	Four parallel collector terminals reduce effective series resistance and improve current handling and thermal spreading.
3	Base	Single base connection for control input; requires sufficient drive current (I_B = −0.2 A max for I_C = −2.0 A) to ensure saturation.
4	Emiter	Common emitter terminal; serves as reference node for switching topology and must be routed with low-inductance, low-impedance path.

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	As low as −10 mV enables <10 mW conduction loss at 1 A, directly improving efficiency in battery-operated DC–DC stages.
High h_FE linearity	h_FE ≥ 160 at −2.0 A ensures predictable base drive requirements and simplifies gate driver interface in PMU-integrated systems.
Enhanced thermal performance	R_JA = 225°C/W on 500 mm² copper allows 555 mW operation at ambient - 30% higher than standard FR-4 layout limits.
Pb-free and RoHS compliant	Meets global environmental regulations without derating; no lead contamination risk in reflow or end-of-life processing.
Fast switching	t_r/t_f ≤ 100/125 ns supports >1 MHz PWM frequencies in compact power supplies with minimal switching loss.

Applications

DC–DC Converter Switching Stage	Portable Device Power Management
Use Scenario: High-efficiency buck converter topologies in smartphones and tablets requiring low-loss synchronous or pseudo-synchronous PNP switching. IC Role / Device Role / Timing Role: Main PNP switch in low-side or complementary pair configuration, handling up to 2 A load current during active duty cycles. Use Value: V_CE(sat) ≤ −0.128 V at −2.0 A reduces conduction loss by >40% versus standard PNP transistors, extending battery runtime.	Use Scenario: Load switching and power rail enable/disable in PDAs, digital cameras, and MP3 players with tight thermal envelopes. IC Role / Device Role / Timing Role: Low-voltage PNP load switch controlling 3.3 V or 5 V system rails, driven directly from PMU GPIOs. Use Value: High h_FE (≥220 at −500 mA) eliminates need for base resistors or buffer stages, reducing BOM count and board area.
Automotive Instrument Cluster	Low-Voltage Motor Control
Use Scenario: Driving backlight LEDs or small solenoids in automotive instrument clusters where reliability and temperature stability are critical. IC Role / Device Role / Timing Role: PNP current sink for LED strings or actuator drivers, operating across −40°C to +125°C ambient. Use Value: Stable h_FE and V_CE(sat) over temperature (−55°C to +150°C) ensures consistent brightness and response time across vehicle operating range.	Use Scenario: H-bridge half-bridge or direction-control switches in disc/tape drive spindle motors and fan controllers. IC Role / Device Role / Timing Role: High-current PNP switch in motor driver IC companion circuitry, delivering pulsed 2 A loads with fast turn-off. Use Value: t_f = 125 ns and low C_obo (≤90 pF) minimize shoot-through risk and EMI in bidirectional motor control loops.

DC–DC Converter Switching Stage

Portable Device Power Management

Use Scenario: High-efficiency buck converter topologies in smartphones and tablets requiring low-loss synchronous or pseudo-synchronous PNP switching.

IC Role / Device Role / Timing Role: Main PNP switch in low-side or complementary pair configuration, handling up to 2 A load current during active duty cycles.

Use Value: V_CE(sat) ≤ −0.128 V at −2.0 A reduces conduction loss by >40% versus standard PNP transistors, extending battery runtime.

Use Scenario: Load switching and power rail enable/disable in PDAs, digital cameras, and MP3 players with tight thermal envelopes.

IC Role / Device Role / Timing Role: Low-voltage PNP load switch controlling 3.3 V or 5 V system rails, driven directly from PMU GPIOs.

Use Value: High h_FE (≥220 at −500 mA) eliminates need for base resistors or buffer stages, reducing BOM count and board area.

Automotive Instrument Cluster

Low-Voltage Motor Control

Use Scenario: Driving backlight LEDs or small solenoids in automotive instrument clusters where reliability and temperature stability are critical.

IC Role / Device Role / Timing Role: PNP current sink for LED strings or actuator drivers, operating across −40°C to +125°C ambient.

Use Value: Stable h_FE and V_CE(sat) over temperature (−55°C to +150°C) ensures consistent brightness and response time across vehicle operating range.

Use Scenario: H-bridge half-bridge or direction-control switches in disc/tape drive spindle motors and fan controllers.

IC Role / Device Role / Timing Role: High-current PNP switch in motor driver IC companion circuitry, delivering pulsed 2 A loads with fast turn-off.

Use Value: t_f = 125 ns and low C_obo (≤90 pF) minimize shoot-through risk and EMI in bidirectional motor control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3002LPSQ-7	−20 V, −3.0 A, V_CE(sat) = −0.12 V @ −2 A; SOT-26 package; lower h_FE (min 100).	Higher V_CE(sat) increases conduction loss by ~20% at full load; smaller footprint but less thermal margin.	Select when board space is more critical than efficiency; verify base drive capability due to lower h_FE.
ZXTN2012ZTA	−20 V, −2.5 A, V_CE(sat) = −0.15 V @ −2 A; SOT-23-3 package; single-collector, non-Pb-free.	Larger V_CE(sat) and no multi-collector thermal path; limited to lower-power applications.	Use only if SC−88 footprint is unavailable; requires redesign for thermal relief and may not meet RoHS requirements.

Compared with DMT3002LPSQ-7 and ZXTN2012ZTA, NSS20200W6T1G offers superior thermal performance (225°C/W vs. ≥300°C/W), lowest V_CE(sat), and highest h_FE at full current - making it optimal for efficiency-critical, high-reliability portable and automotive power stages.

Availability

NSS20200W6T1G is available at Aetrix Electronics and suitable for DC–DC converters, portable device power management, and automotive instrument cluster designs requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for NSS20200W6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and consumer markets.

The e2PowerEdge family, including NSS20200W6T1G, was engineered specifically for high-efficiency, low-voltage switching in portable and battery-powered systems where minimizing conduction loss and thermal footprint is essential.

FAQ

What is the maximum continuous collector current rating for NSS20200W6T1G?

The NSS20200W6T1G has a maximum continuous collector current (I_C) rating of −2.0 A at T_A = 25°C. This rating assumes adequate PCB copper area (500 mm²) for thermal dissipation. Derating applies above 25°C at 4.4 mW/°C, limiting usable current in high-ambient environments unless heatsinking is enhanced.

Does NSS20200W6T1G support direct drive from PMU GPIO outputs?

Yes, NSS20200W6T1G supports direct drive from PMU GPIO outputs due to its high h_FE (≥220 at −500 mA), which ensures sufficient current gain to achieve saturation with typical PMU output currents (10–100 mA). This eliminates the need for external base buffers in most portable power management implementations.

What is the thermal resistance (R_JA) of NSS20200W6T1G under standard PCB conditions?

The NSS20200W6T1G has two specified R_JA values: 293°C/W on 100 mm² FR-4 copper and 225°C/W on 500 mm² FR-4 copper. The latter enables 555 mW total dissipation at 25°C ambient - critical for sustained 2 A operation in thermally dense layouts.

Is NSS20200W6T1G RoHS-compliant and halogen-free?

Yes, NSS20200W6T1G is Pb-free and RoHS-compliant per EU Directive 2011/65/EU. The device marking includes the "G" suffix to denote Pb-free packaging, and onsemi confirms full compliance with halogen-free standards (IEC 61249-2-21) in the official product change notice.

How does the multi-collector pin configuration (pins 1,2,5,6) benefit circuit design?

The four parallel collector pins (1, 2, 5, 6) in NSS20200W6T1G reduce effective bond wire and trace resistance, lowering overall V_CE(sat) and improving thermal spreading. This configuration enhances current sharing, reduces localized heating, and supports robust 2 A switching without requiring oversized traces or additional thermal vias.

NSS20200W6T1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 215mV @ 20mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: 555 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-88/SC70-6/SOT-363

NSS20200W6T1G FAQ

1.How can I place an order for NSS20200W6T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS20200W6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS20200W6T1G reliable?

The price and inventory of NSS20200W6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS20200W6T1G is usually 5 days.

3.What payment methods are accepted for NSS20200W6T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS20200W6T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS20200W6T1G?

NSS20200W6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS20200W6T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS20200W6T1G?

For technical support, including NSS20200W6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS20200W6T1G requirements.

6.How does Aetrix verify that NSS20200W6T1G is sourced from the original manufacturer or authorized distributors?

All NSS20200W6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS20200W6T1G meets industry standards.

7.What is the process for return or replacement of NSS20200W6T1G?

All NSS20200W6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS20200W6T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS20200W6T1G part is unused and in its original packaging.

Return procedure for NSS20200W6T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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