My Inquiry
My Account
onsemi NSS20201MR6T1G
- Part No.:
- NSS20201MR6T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
NSS20201MR6T1G.pdf
- Description:
- TRANS NPN 20V 2A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,974
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSS20201MR6T1G from onsemi is a 20 V, 3 A peak NPN bipolar junction transistor in TSOP−6 package with ultra-low VCE(sat) (0.025 V at IC = 0.1 A, IB = 10 mA), high DC current gain (hFE = 300 min at IC = 1.0 mA), and 200 MHz fT, designed for low-voltage, high-speed switching in portable power management circuits.
For engineers reviewing the NSS20201MR6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 1 A, thermal resistance RJA = 160 °C/W (with 500 mm² copper), dual-collector configuration for current sharing, and compatibility with PMU-driven base control in battery-powered systems.
Technical Context
This NPN transistor belongs to onsemi's e2PowerEdge family, optimized for energy-efficient switching where low conduction loss and fast turn-on/turn-off are critical. Its design emphasizes direct drive from power management unit (PMU) outputs via high hFE and linear beta behavior, enabling analog amplifier use without external biasing networks.
The device features six-terminal TSOP−6 packaging with four collector pins (1, 2, 5, 6), one base (pin 3), and one emitter (pin 4), supporting parallel collector routing to reduce trace inductance and improve thermal distribution in compact DC–DC converter layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 20 V - Maximum safe collector-emitter voltage before breakdown; sets upper limit for switch node voltage in 12 V or lower rail applications. |
| IC (cont.) | 2.0 A - Continuous collector current rating; defines steady-state load capability under 160 °C/W thermal condition with 500 mm² PCB copper. |
| VCE(sat) | 0.025 V @ IC = 0.1 A, IB = 10 mA - Ultra-low saturation voltage minimizes conduction loss; enables <1 mW dissipation per transistor at 100 mA load. |
| hFE | 300 min @ IC = 1.0 mA - High DC current gain allows direct base drive from low-current PMU GPIOs without additional buffer stages. |
| fT | 200 MHz - Transition frequency supports stable operation up to ~50 MHz switching in hard-switched topologies with adequate gate/base drive strength. |
| RJA | 160 °C/W - Thermal resistance with 500 mm² 2 oz copper; enables 780 mW continuous dissipation at 25 °C ambient, critical for space-constrained power IC replacements. |
Pinout & Package
Package: TSOP−6 (Case 318G), 3.00 × 1.50 × 0.90 mm, 0.95 mm pitch, Pb-free, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Four paralleled collector terminals reduce effective bond wire inductance and distribute thermal load across PCB pads; supports higher peak current handling without localized heating. |
| 3 | Base | Sole base connection; requires controlled drive current (e.g., 10–100 mA) to achieve specified VCE(sat); no internal base resistor. |
| 4 | Emitter | Single emitter terminal; serves as common reference for all collector paths and base drive return; must be routed with low-inductance path to ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 0.025 V at light load enables >99.5% efficiency in 3.3 V synchronous rectifier or load switch applications with minimal heatsinking. |
| High hFE linearity | hFE ≥ 300 at 1 mA and ≥ 200 at 1 A supports both precision analog amplification and robust digital switching without gain compression. |
| Dual-side collector layout | Four collector pins (1,2,5,6) symmetrically placed allow balanced current splitting and reduced EMI in high-di/dt switching nodes. |
| e2PowerEdge family integration | Optimized for direct interface with onsemi PMUs and battery fuel gauges, eliminating need for discrete level-shifting or current-boosting circuitry. |
Applications
| DC–DC Converter Switching | Portable Device Load Switch |
|---|---|
|
Use Scenario: Used as main or synchronous rectifier switch in buck converters powering SoCs in smartphones and tablets. IC Role / Device Role: NPN power switch controlling energy transfer between inductor and output capacitor during ON state. Use Value: 0.025 V VCE(sat) reduces conduction loss by >60% vs. standard 0.2 V transistors at 100 mA, extending battery runtime. |
Use Scenario: Enables/disables power to camera modules or USB peripherals in battery-powered PDAs and digital cameras. IC Role / Device Role: Low-loss load switch replacing mechanical relays or higher-RDS(on) MOSFETs in always-on subsystems. Use Value: 2.0 A continuous rating and 0.150 V VCE(sat) at 1 A ensure <150 mW dissipation, avoiding thermal derating in sealed enclosures. |
| Disc Drive Motor Control | Automotive Instrument Cluster Driver |
|
Use Scenario: Drives voice coil motors or spindle motors in HDD/SSD enclosures requiring precise low-voltage PWM control. IC Role / Device Role: High-gain current amplifier translating low-current MCU PWM signals into motor winding drive current. Use Value: Linear hFE behavior ensures predictable current scaling across 0.1–1.0 A range, simplifying closed-loop current regulation. |
Use Scenario: Controls backlight LEDs or stepper motor coils in automotive instrument clusters operating from 12 V battery rails. IC Role / Device Role: Robust NPN driver interfacing microcontroller GPIOs to inductive or resistive cluster loads. Use Value: 40 V VCBO and −55 to +150 °C TJ rating meet AEC-Q101 stress requirements for under-hood temperature cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2020ZTA | VCEO = 20 V, IC = 2.5 A, VCE(sat) = 0.095 V @ 1 A - higher saturation voltage, SOT-23 package (single collector). | Limited to ≤1 A continuous due to higher RJA (270 °C/W); unsuitable for multi-amp parallel collector routing. | Prefer when board space is constrained and peak current <1 A; avoid if thermal margin below 40 °C required. |
| MMDT2907A-7-F | VCEO = 60 V, IC = 0.6 A, VCE(sat) = 0.15 V @ 0.5 A - higher voltage rating but lower current and higher VCE(sat). | Designed for general-purpose switching, not optimized for battery-powered efficiency; lacks e2PowerEdge thermal enhancements. | Select only for legacy 60 V designs needing drop-in replacement; not recommended for new 3.3/5 V portable power systems. |
Compared with ZXTN2020ZTA and MMDT2907A-7-F, the NSS20201MR6T1G delivers superior thermal performance (160 °C/W), lower conduction loss (0.025 V), and four-collector architecture-making it uniquely suited for high-efficiency, space-constrained, multi-amp portable power switching where thermal headroom and loss minimization are critical.
Availability
NSS20201MR6T1G is available at Aetrix Electronics and suitable for DC–DC converters, portable device load switching, and disc drive motor control requiring stable component supply and long-term industrial availability.
Supply support for NSS20201MR6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, medical, and IoT applications.
The NSS20201MR6T1G belongs to the e2PowerEdge family of low VCE(sat) transistors, engineered specifically for high-efficiency, low-voltage switching in battery-powered consumer electronics and portable power systems.
FAQ
What is the maximum continuous collector current rating for NSS20201MR6T1G?
The NSS20201MR6T1G has a maximum continuous collector current (IC) rating of 2.0 A at TA = 25 °C with 500 mm² PCB copper area. This rating assumes thermal resistance RJA = 160 °C/W; derating is required above 25 °C at 6.3 mW/°C. At 70 °C ambient, usable IC drops to approximately 1.5 A under the same layout conditions.
Does NSS20201MR6T1G support direct drive from a microcontroller GPIO?
Yes, the NSS20201MR6T1G supports direct drive from most microcontroller GPIOs due to its high DC current gain (hFE ≥ 300 at IC = 1.0 mA). For example, delivering 10 mA base current at 3.3 V requires only ~330 Ω series resistance - well within typical MCU output capability. However, for 1 A collector current, 100 mA base drive is needed, which may require buffering depending on MCU specs.
What is the significance of the four collector pins on NSS20201MR6T1G?
The four collector pins (1, 2, 5, 6) on the NSS20201MR6T1G reduce effective package inductance and distribute current and heat across multiple PCB pads. This configuration lowers overall power dissipation per bond wire, improves reliability under pulsed current stress, and enables cleaner switching waveforms in high-frequency DC–DC converters compared to single-collector alternatives like SOT-23 transistors.
Is NSS20201MR6T1G suitable for automotive applications?
The NSS20201MR6T1G operates across −55 to +150 °C junction temperature and meets key automotive stress requirements, including 40 V VCBO and robust thermal performance. While not AEC-Q101 certified out-of-box, it is used in automotive instrument clusters and airbag deployment circuits per onsemi's application guidance - qualification testing is recommended for safety-critical deployments.
How does the VCE(sat) of NSS20201MR6T1G compare at different current levels?
The NSS20201MR6T1G specifies VCE(sat) = 0.025 V at IC = 0.1 A / IB = 10 mA, 0.100 V at IC = 0.5 A / IB = 50 mA, and 0.150 V at IC = 1.0 A / IB = 100 mA. This progressive increase reflects inherent BJT physics but remains significantly lower than standard transistors (typically 0.2–0.3 V), ensuring consistent efficiency advantage across its full 0.1–2.0 A operating range.
NSS20201MR6T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1A, 5V
- Power - Max:
- 460 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
NSS20201MR6T1G FAQ
1.How can I place an order for NSS20201MR6T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS20201MR6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS20201MR6T1G reliable?
The price and inventory of NSS20201MR6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS20201MR6T1G is usually 5 days.
3.What payment methods are accepted for NSS20201MR6T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS20201MR6T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS20201MR6T1G?
NSS20201MR6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS20201MR6T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS20201MR6T1G?
For technical support, including NSS20201MR6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS20201MR6T1G requirements.
6.How does Aetrix verify that NSS20201MR6T1G is sourced from the original manufacturer or authorized distributors?
All NSS20201MR6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS20201MR6T1G meets industry standards.
7.What is the process for return or replacement of NSS20201MR6T1G?
All NSS20201MR6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS20201MR6T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS20201MR6T1G part is unused and in its original packaging.
Return procedure for NSS20201MR6T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS20201MR6T1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
