My Inquiry
My Account
onsemi NSS20500UW3TBG
- Part No.:
- NSS20500UW3TBG
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 3-WDFN Exposed Pad
- Datasheet:
-
NSS20500UW3TBG.pdf
- Description:
- TRANS PNP 20V 5A 3WDFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,381
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSS20500UW3TBG from onsemi is a PNP bipolar junction transistor in WDFN3 package, rated for −20 V VCEO, −7.0 A IC(peak), and ultra-low −0.015 V typical VCE(sat) at −1.0 A/−0.100 A drive-designed for high-efficiency, low-voltage switching in portable DC–DC converters and battery-powered motor controls.
For engineers reviewing the NSS20500UW3TBG datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at high current density, thermal resistance (RJA = 85 °C/W on 500 mm² PCB), and Pb-free WDFN3 footprint compatibility with space-constrained power stages.
Technical Context
This PNP transistor operates in saturation mode for efficient switching, with guaranteed VCE(sat) ≤ −0.260 V at −4.0 A/−0.400 A drive and linear hFE ranging from 250 (−10 mA) to 180 (−3.0 A). Its fT = 100 MHz supports fast turn-on/turn-off transitions.
Thermal design relies on dual dissipation ratings: 1.5 W continuous on 500 mm² FR-4 (RJA = 85 °C/W) and 3.0 W single-pulse (<10 s); RJL = 23 °C/W enables effective heat transfer via exposed pad to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −20 V - Maximum reverse-biased collector-emitter voltage before breakdown; defines safe operating range in low-voltage PNP switch configurations. |
| IC(peak) | −7.0 A - Peak pulsed collector current capability; supports transient load demands in motor drivers and DC–DC synchronous rectification. |
| VCE(sat) (typ) | −0.015 V at −1.0 A/−0.100 A - Ultra-low saturation voltage reduces conduction loss and self-heating in high-current, low-VCC applications. |
| hFE | 250 min at −10 mA - High DC current gain enables direct drive from PMU GPIOs without external base amplification. |
| fT | 100 MHz - Transition frequency confirms suitability for switching frequencies up to ~10–20 MHz with controlled rise/fall times (tr/tf ≤ 160 ns). |
| RJA | 85 °C/W on 500 mm² FR-4 - Thermal resistance enables 1.5 W continuous power dissipation without active cooling in compact layouts. |
Pinout & Package
Package: WDFN3 (Case 506AU), 2.0 × 2.0 × 0.75 mm body with exposed thermal pad; Pb-free, RoHS-compliant surface-mount package optimized for thermal and electrical performance in dense power circuits.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Collector) | Main current sink terminal | Connected to high-side rail or load return path; carries full switched current; thermally coupled to exposed pad. |
| 2 (Base) | Control input | Receives negative drive current to saturate transistor; requires −0.100 A for full −1.0 A conduction per datasheet test condition. |
| 3 (Emitter) | Current source reference | Typically tied to system ground or positive rail in high-side switch configuration; defines VEB biasing and cutoff threshold. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | −0.015 V typical at −1.0 A ensures <15 mW conduction loss per device-critical for >95% efficiency in portable DC–DC buck stages. |
| High hFE linearity | hFE ≥ 220 at −1.0 A enables stable analog gain or predictable digital switching without base current scaling circuitry. |
| Fast switching | td/tr/ts/tf ≤ 75/160/350/160 ns at −750 mA supports PWM frequencies up to 2 MHz with minimal dead-time overhead. |
| Thermally enhanced WDFN3 | RJL = 23 °C/W to lead #1 (exposed pad) allows >1.5× higher continuous power vs. comparable SOT-23 devices on identical PCB area. |
Applications
| DC–DC Buck Converter Output Stage | Portable Device Motor Driver |
|---|---|
Use Scenario: Low-voltage (≤3.3 V) synchronous buck converter in smartphones and wearables requiring high efficiency at light-to-moderate loads. IC Role / Device Role / Timing Role: PNP switch in high-side position or complementary pair with NPN/NMOS; handles peak currents up to −7.0 A during transient load steps. Use Value: −0.015 V VCE(sat) cuts conduction loss by >60% vs. standard PNP transistors, extending battery runtime by measurable margin at 1–2 A output. |
Use Scenario: Bidirectional 5 V motor control in USB-powered disc drives and portable printers where board space and thermal headroom are constrained. IC Role / Device Role / Timing Role: Low-side or H-bridge leg switch; driven directly from PMU GPIO with −0.100 A base current for −1.0 A motor stall current. Use Value: 100 MHz fT and sub-200 ns tr/tf enable clean commutation at 20 kHz PWM without shoot-through risk or excessive EMI. |
| Automotive Instrument Cluster Load Switch | Low-Voltage LED Backlight Dimming |
Use Scenario: Power switching for gauges, indicators, and small solenoids in automotive instrument clusters operating from 12 V nominal with 5 V regulation. IC Role / Device Role / Timing Role: High-side PNP switch controlling 100–500 mA loads; leverages −7.0 V VEBO rating for robustness against load-dump transients. Use Value: −55 °C to +150 °C TJ range and HBM Class 3B ESD rating ensure reliability in under-hood temperature cycling and assembly handling. |
Use Scenario: Constant-current dimming of white LEDs in digital cameras and MP3 players powered by single-cell Li-ion (2.7–4.2 V). IC Role / Device Role / Timing Role: Linear current regulator or PWM-controlled switch in series with LED string; uses hFE linearity for analog dimming precision. Use Value: Stable hFE across −10 mA to −1.0 A enables accurate current mirroring without feedback compensation, simplifying driver IC count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3002LPSQ-7 | −20 V VCEO, −6.0 A IC(peak), −0.022 V VCE(sat) typ at −1.0 A; SOT-23-3 package; RJA = 170 °C/W. | Higher thermal resistance limits continuous power to ~0.5 W; suitable only for intermittent or low-duty-cycle loads. | Select when legacy SOT-23 layout must be retained and peak current ≤ −6.0 A suffices; avoid for sustained >500 mA operation. |
| ZXTN2012ZTA | −20 V VCEO, −5.0 A IC(continuous), −0.085 V VCE(sat) typ at −1.0 A; SOT-89-3 package; RJA = 120 °C/W. | Higher VCE(sat) increases conduction loss by ~5.7×; larger footprint but better heatsinking than WDFN3. | Choose for designs needing higher continuous current margin (>1.5 W) and accepting higher dropout voltage; not optimal for ultra-low-loss targets. |
Compared with DMT3002LPSQ-7 and ZXTN2012ZTA, NSS20500UW3TBG delivers the lowest VCE(sat) and best thermal performance in its class, enabling higher efficiency and smaller PCB area-especially critical in battery-powered systems where every milliwatt and square millimeter matters.
Availability
NSS20500UW3TBG is available at Aetrix Electronics and suitable for DC–DC converters, portable motor controls, automotive instrument clusters, and LED backlighting requiring stable component supply and consistent Pb-free WDFN3 packaging.
Supply support for NSS20500UW3TBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NSS20500UW3TBG belongs to onsemi's e2PowerEdge family-engineered specifically for ultra-low-loss, high-current switching in space- and efficiency-constrained battery-powered systems.
FAQ
What is the maximum continuous collector current rating for NSS20500UW3TBG?
The NSS20500UW3TBG has a maximum continuous collector current (IC) of −5.0 A at TA = 25 °C on FR-4 PCB with 500 mm² copper. Derating applies above 25 °C at 11.8 mW/°C, limiting usable current in elevated ambient conditions. This rating is validated per onsemi's thermal characterization in Note 2 of the datasheet.
Does NSS20500UW3TBG support direct drive from a microcontroller GPIO?
Yes, NSS20500UW3TBG supports direct drive from most PMU or MCU GPIOs due to its high hFE (≥250 at −10 mA) and low required base current (−0.010 A for −1.0 A collector current). Its −0.76 V typical VBE(sat) aligns with standard 3.3 V logic levels, eliminating need for base resistors in many cases.
What is the thermal resistance junction-to-ambient for NSS20500UW3TBG on a standard PCB?
NSS20500UW3TBG achieves RJA = 85 °C/W when mounted on FR-4 with 500 mm² of 1 oz copper, per Note 2 in the datasheet. This value assumes full use of the exposed thermal pad and proper solder stencil design-critical for sustaining 1.5 W continuous dissipation without exceeding TJ = 150 °C.
Is NSS20500UW3TBG pin-compatible with other WDFN3 PNP transistors?
No documented pin-compatible replacements exist for NSS20500UW3TBG in the WDFN3 footprint. While pinout (Collector/Base/Emitter on pins 1/2/3) matches industry-standard WDFN3 PNP orientation, electrical parameters-including VCE(sat), hFE, and thermal specs-are unique to this onsemi e2PowerEdge device.
What does the "TBG" suffix indicate in NSS20500UW3TBG?
The "TBG" suffix in NSS20500UW3TBG denotes tape-and-reel packaging (3000 units per reel), Pb-free construction ("G"), and compliance with onsemi's standard WDFN3 mechanical and marking specifications per Case 506AU. It is functionally identical to NSS20500UW3T2G except for reel quantity and date-code formatting.
NSS20500UW3TBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 3-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- 260mV @ 400mA, 4A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2A, 2V
- Power - Max:
- 875 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-WDFN (2x2)
NSS20500UW3TBG FAQ
1.How can I place an order for NSS20500UW3TBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS20500UW3TBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS20500UW3TBG reliable?
The price and inventory of NSS20500UW3TBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS20500UW3TBG is usually 5 days.
3.What payment methods are accepted for NSS20500UW3TBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS20500UW3TBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS20500UW3TBG?
NSS20500UW3TBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS20500UW3TBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS20500UW3TBG?
For technical support, including NSS20500UW3TBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS20500UW3TBG requirements.
6.How does Aetrix verify that NSS20500UW3TBG is sourced from the original manufacturer or authorized distributors?
All NSS20500UW3TBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS20500UW3TBG meets industry standards.
7.What is the process for return or replacement of NSS20500UW3TBG?
All NSS20500UW3TBG units undergo pre-shipment inspection (PSI). If there is an issue with NSS20500UW3TBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS20500UW3TBG part is unused and in its original packaging.
Return procedure for NSS20500UW3TBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS20500UW3TBG Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
