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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi NSS20501UW3TBG

Name: NSS20501UW3TBG
Brand: onsemi
SKU: NSS20501UW3TBG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NSS20501UW3TBG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: 3-WDFN Exposed Pad

Datasheet:: NSS20501UW3TBG.pdf

Description:: TRANS NPN 20V 5A 3WDFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NSS20501UW3TBG from onsemi is a 20 V, 7.0 A NPN bipolar junction transistor in WDFN3 package, featuring ultra-low V_CE(sat) (0.007 V typ. at I_C = 0.1 A), high DC current gain (h_FE = 200–325), and 150 MHz f_T, designed for high-efficiency, low-voltage switching in portable power management circuits.

For engineers reviewing the NSS20501UW3TBG datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage under pulsed 7.0 A peak current, thermal resistance (R_JA = 85 °C/W with 500 mm² copper), and compatibility with PMU-driven base control in space-constrained DC–DC converters.

Technical Context

This NPN transistor operates in linear and saturated switching modes with guaranteed V_CE(sat) ≤ 0.135 V at I_C = 3.0 A / I_B = 0.03 A and V_BE(sat) = 0.76–0.90 V. Its f_T = 150 MHz supports fast turn-on/turn-off transitions (t_d = 90 ns, t_r = 100 ns) in pulse-width modulated loads.

Thermal performance is defined for two PCB layouts: 100 mm² (R_JA = 143 °C/W) and 500 mm² (R_JA = 85 °C/W, R_JL = 23 °C/W), enabling precise junction temperature estimation in battery-powered systems with ambient ranges from −55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	20 V - Maximum collector-emitter blocking voltage before breakdown; sets upper limit for supply rail in 12 V or lower DC–DC stages.
I_C (continuous)	5.0 A - Continuous collector current rating; defines steady-state conduction capability without derating at T_A = 25 °C.
V_CE(sat) @ I_C=1.0 A	0.031–0.040 V - Ultra-low saturation voltage ensures <0.04 W conduction loss at 1 A, critical for >95% efficiency in compact converters.
h_FE @ I_C=10 mA	200–325 - High DC current gain enables direct drive from low-current PMU outputs (e.g., 10 mA base drive supports ≥2 A collector load).
f_T	150 MHz - Transition frequency confirms suitability for switching frequencies up to ~15 MHz with adequate gain margin.
R_JA (500 mm²)	85 °C/W - Thermal resistance with large copper pour allows 1.5 W continuous dissipation at T_A = 25 °C, supporting high-duty-cycle operation.

Pinout & Package

Package: WDFN3 (Case 506AU), 2.0 × 2.0 × 0.75 mm, thermally enhanced exposed pad, Pb-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main current sink path	Connected to load return or switch node; electrically tied to exposed thermal pad for low-impedance heat transfer to PCB.
2 (Base)	Control input terminal	Receives current-limited drive signal; requires no external base resistor when driven by PMU with ≤10 mA output capability.
3 (Emitter)	Current source reference	Typically grounded or connected to low-side shunt; forms common-emitter configuration with minimal parasitic inductance due to short lead frame path.

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	0.007 V typical at I_C = 0.1 A reduces conduction loss by >50% vs. standard BJT in 5 V logic-level switching.
High h_FE linearity	h_FE remains ≥180 up to I_C = 3.0 A, enabling predictable gain-based current control without active feedback.
Thermally optimized WDFN3	Exposed pad and R_JL = 23 °C/W allow direct thermal coupling to inner ground plane, improving reliability in sealed portable enclosures.
ESD robustness	HBM Class 3B (≥8 kV) and MM Class C ensure survival during automated PCB assembly and field handling without added protection diodes.

Applications

Portable DC–DC Converters	Battery-Powered Motor Control
Use Scenario: Step-down conversion in smartphones and wearables using synchronous or pseudo-synchronous topology with 3.0–5.0 V input. IC Role / Device Role / Timing Role: Low-side switch in buck converter power stage, operating at 1–3 MHz with 7.0 A peak current pulses. Use Value: V_CE(sat) ≤ 0.110 V at I_C = 4.0 A minimizes I²R loss, extending battery runtime by up to 8% versus standard 20 V BJTs.	Use Scenario: H-bridge low-side driver for 5–12 V brushed motors in digital cameras and portable printers. IC Role / Device Role / Timing Role: High-current, fast-switching NPN switch controlling motor direction and PWM speed modulation. Use Value: 100 ns rise/fall times and 500 ns storage time enable clean 20 kHz PWM without shoot-through risk in compact motor drivers.
Automotive Instrument Clusters	Low-Voltage Power Management
Use Scenario: LED backlight dimming and solenoid actuation in dashboard displays requiring ASIL-B compatible discrete switches. IC Role / Device Role / Timing Role: Current-controlled switch driving 200–500 mA LED strings or small relays with precise analog dimming capability. Use Value: Linear h_FE behavior across −40 °C to +125 °C enables stable analog current regulation without calibration drift.	Use Scenario: Load switching and power sequencing in multi-rail embedded systems (e.g., FPGA core/logic supplies). IC Role / Device Role / Timing Role: High-gain, low-loss discrete switch replacing MOSFETs where gate drive voltage is limited to 2.8–3.3 V. Use Value: Direct PMU-compatible base drive eliminates level-shifting circuitry, reducing BOM count and board area by 30% in space-constrained modules.

Portable DC–DC Converters

Battery-Powered Motor Control

Use Scenario: Step-down conversion in smartphones and wearables using synchronous or pseudo-synchronous topology with 3.0–5.0 V input.

IC Role / Device Role / Timing Role: Low-side switch in buck converter power stage, operating at 1–3 MHz with 7.0 A peak current pulses.

Use Value: V_CE(sat) ≤ 0.110 V at I_C = 4.0 A minimizes I²R loss, extending battery runtime by up to 8% versus standard 20 V BJTs.

Use Scenario: H-bridge low-side driver for 5–12 V brushed motors in digital cameras and portable printers.

IC Role / Device Role / Timing Role: High-current, fast-switching NPN switch controlling motor direction and PWM speed modulation.

Use Value: 100 ns rise/fall times and 500 ns storage time enable clean 20 kHz PWM without shoot-through risk in compact motor drivers.

Automotive Instrument Clusters

Low-Voltage Power Management

Use Scenario: LED backlight dimming and solenoid actuation in dashboard displays requiring ASIL-B compatible discrete switches.

IC Role / Device Role / Timing Role: Current-controlled switch driving 200–500 mA LED strings or small relays with precise analog dimming capability.

Use Value: Linear h_FE behavior across −40 °C to +125 °C enables stable analog current regulation without calibration drift.

Use Scenario: Load switching and power sequencing in multi-rail embedded systems (e.g., FPGA core/logic supplies).

IC Role / Device Role / Timing Role: High-gain, low-loss discrete switch replacing MOSFETs where gate drive voltage is limited to 2.8–3.3 V.

Use Value: Direct PMU-compatible base drive eliminates level-shifting circuitry, reducing BOM count and board area by 30% in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTN2020ZTA	V_CEO = 20 V, I_C = 4.0 A, V_CE(sat) = 0.14 V @ 2 A - higher saturation voltage, lower peak current rating.	Less suitable for >3 A pulsed loads; better for cost-sensitive 1–2 A linear regulators.	Select ZXTN2020ZTA only if design tolerates ≥0.14 V V_CE(sat) and peak current stays below 4 A.
MMDT2907A-7-F	V_CEO = 60 V, I_C = 0.6 A, h_FE = 100 - higher voltage rating but lower current and gain, SOT-363 package.	Targeted at general-purpose logic-level switching, not high-current power stages.	Choose MMDT2907A-7-F only for low-power signal switching where 60 V standoff is required and current is <0.5 A.

Compared with ZXTN2020ZTA and MMDT2907A-7-F, the NSS20501UW3TBG delivers superior power efficiency at 3–7 A loads due to its 0.007–0.135 V V_CE(sat) range and 5.0 A continuous rating, while its WDFN3 thermal design supports sustained operation where alternatives require derating or heatsinking.

Availability

NSS20501UW3TBG is available at Aetrix Electronics and suitable for portable DC–DC converters, battery-powered motor controls, and automotive instrument clusters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for NSS20501UW3TBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NSS20501UW3TBG belongs to onsemi's e2PowerEdge family of low V_CE(sat) transistors, engineered specifically for high-efficiency, space-constrained power switching in battery-operated devices where thermal density and conduction loss are critical.

FAQ

What is the maximum continuous collector current rating for NSS20501UW3TBG?

The NSS20501UW3TBG has a maximum continuous collector current (I_C) rating of 5.0 A at T_A = 25 °C with 500 mm² copper PCB area. This rating drops with ambient temperature per the 11.8 mW/°C derating curve, and must be verified against actual board layout and thermal environment in the final design. The NSS20501UW3TBG supports 7.0 A peak current (I_CM) under pulsed conditions.

Does NSS20501UW3TBG require a base current limiting resistor when driven by a PMU?

The NSS20501UW3TBG can be driven directly from many PMU control outputs without an external base resistor, thanks to its high h_FE (200–325) and low V_BE(sat) (0.76–0.90 V). For example, a 10 mA PMU output can reliably switch ≥2 A collector current. However, a resistor is recommended if the drive source lacks current limiting or operates beyond 3.3 V to prevent excessive base current. The NSS20501UW3TBG datasheet specifies base current values for each V_CE(sat) test condition.

What is the thermal resistance from junction to ambient for NSS20501UW3TBG on a standard PCB?

The NSS20501UW3TBG has two specified R_JA values: 143 °C/W for FR-4 with 100 mm² copper, and 85 °C/W for FR-4 with 500 mm² copper (1 oz). The lower value assumes full use of the exposed thermal pad and generous ground pour. Actual R_JA depends on PCB stack-up, via placement under the pad, and airflow; the NSS20501UW3TBG's R_JL = 23 °C/W provides a more layout-independent metric for thermal modeling.

Is NSS20501UW3TBG suitable for analog amplifier applications?

Yes, the NSS20501UW3TBG is explicitly cited in its datasheet as ideal for analog amplifiers due to its linear DC current gain (h_FE) behavior across collector currents from 10 mA to 3.0 A. Its consistent h_FE and low V_CE(sat) support stable biasing and low-distortion small-signal amplification in Class-A or AB topologies where thermal stability and gain predictability are essential. The NSS20501UW3TBG's f_T = 150 MHz also supports audio-frequency and low-MHz RF amplification.

What does the "TBG" suffix indicate in NSS20501UW3TBG?

The "TBG" suffix in NSS20501UW3TBG denotes tape-and-reel packaging in Pb-free (RoHS-compliant) WDFN3 format, with 3000 units per reel. The "T" indicates tape-and-reel, "B" specifies the standard packing option, and "G" confirms Pb-free construction per onsemi's environmental compliance program. This matches the ordering information in the official NSS20501UW3 datasheet (Ordering Number: NSS20501UW3/D).

NSS20501UW3TBG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: 3-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 125mV @ 400mA, 4A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2A, 2V

Power - Max:: 875 mW

Frequency - Transition:: 150MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-WDFN (2x2)

NSS20501UW3TBG FAQ

1.How can I place an order for NSS20501UW3TBG through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS20501UW3TBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS20501UW3TBG reliable?

The price and inventory of NSS20501UW3TBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS20501UW3TBG is usually 5 days.

3.What payment methods are accepted for NSS20501UW3TBG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS20501UW3TBG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS20501UW3TBG?

NSS20501UW3TBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS20501UW3TBG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS20501UW3TBG?

For technical support, including NSS20501UW3TBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS20501UW3TBG requirements.

6.How does Aetrix verify that NSS20501UW3TBG is sourced from the original manufacturer or authorized distributors?

All NSS20501UW3TBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS20501UW3TBG meets industry standards.

7.What is the process for return or replacement of NSS20501UW3TBG?

All NSS20501UW3TBG units undergo pre-shipment inspection (PSI). If there is an issue with NSS20501UW3TBG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS20501UW3TBG part is unused and in its original packaging.

Return procedure for NSS20501UW3TBG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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