My Inquiry
My Account
onsemi NSS30070MR6T1G
- Part No.:
- NSS30070MR6T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
NSS30070MR6T1G.pdf
- Description:
- TRANS PNP 30V 0.7A SC-74
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSS30070MR6T1G from onsemi is a PNP bipolar junction transistor optimized for low-voltage, high-speed switching in portable power management systems. It delivers 30 V VCEO, 700 mA IC, and ultra-low 0.25 V VCE(sat) at IC = 500 mA / IB = 50 mA - enabling efficient energy control in DC–DC converters and battery-powered devices.
For engineers reviewing the NSS30070MR6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage performance at high current, thermal resistance (188 °C/W on 2″ FR-4), and compatibility with PMU output drive levels due to its hFE ≥ 150 at 100 mA.
Technical Context
This PNP transistor operates in active and saturation regions for analog amplification and digital switching. Its linear current gain (hFE) supports stable biasing in amplifier stages, while low VCE(sat) minimizes conduction loss in high-duty-cycle power switches.
The device uses SC−74 (Case 318F) packaging with dual collector terminals (Pins 2 & 5), single emitter (Pin 3), and base (Pin 6). Thermal design must account for RJA = 188 °C/W under specified PCB mounting conditions - critical for sustained 700 mA operation in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum safe collector-emitter voltage before breakdown; sets upper limit for supply rail compatibility in 3.3 V/5 V/12 V systems. |
| IC | 700 mA - Continuous collector current rating; defines maximum load-handling capability in motor drivers or power switches. |
| VCE(sat) | 0.25 V @ 500 mA/50 mA - Low saturation voltage reduces power loss (Ploss ≈ 125 mW) and heat generation during switching. |
| hFE | ≥150 @ VCE = 3.0 V, IC = 100 mA - High DC current gain enables direct drive from low-current PMU outputs without additional buffer stages. |
| RJA | 188 °C/W - Junction-to-ambient thermal resistance on 2″ FR-4 board; determines required copper area and airflow for thermal compliance at full load. |
| TJ Range | −55 °C to +150 °C - Wide operating temperature range supports automotive instrument cluster and industrial embedded use cases. |
Pinout & Package
Package: SC−74 (Case 318F), surface-mount, 6-pin miniature plastic package with exposed thermal pad (not electrically connected). Dimensions per ON Semiconductor drawing 98ASB42973B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No Connection | Unused terminal; must remain unconnected to avoid parasitic coupling or mechanical stress. |
| Pin 2 | Collector | Primary collector connection; used with Pin 5 for parallel current handling or enhanced thermal path routing. |
| Pin 3 | Emitter | Main emitter terminal; connects to ground or low-side return path in common-emitter switch configurations. |
| Pin 4 | No Connection | Unused terminal; no internal bond wire; leave floating or tie to ground only if validated for EMI reduction. |
| Pin 5 | Collector | Secondary collector terminal; electrically identical to Pin 2; improves current sharing and thermal dissipation in high-current layouts. |
| Pin 6 | Base | Control input; requires ~70 mA base drive for full 700 mA saturation; compatible with 1.8 V–3.3 V logic-level PMU outputs. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | 0.25 V at 500 mA enables >95% efficiency in 3.3 V load switches and reduces thermal derating in space-constrained designs. |
| High hFE | Minimum 150 gain allows direct interface with low-drive PMU outputs - eliminating need for base resistors or driver ICs in many applications. |
| SC−74 package | 6-pin miniature footprint with dual collectors supports high-density PCB layouts and improves thermal performance over SOT-23 equivalents. |
| Pb-free & RoHS | Compliant with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 - suitable for lead-free reflow assembly. |
Applications
| DC–DC Converter Switch | Portable Device Power Control |
|---|---|
Use Scenario: Step-down buck converter top switch in 5 V → 3.3 V regulation for smartphone baseband processors. IC Role / Device Role / Timing Role: PNP high-side switch controlling inductor current flow during PWM on-time. Use Value: 0.25 V VCE(sat) limits conduction loss to <125 mW at 500 mA, reducing thermal load and improving conversion efficiency by ~1.2% vs. standard transistors. |
Use Scenario: Load switch enabling/disabling USB peripheral power in Bluetooth headsets and wireless earbuds. IC Role / Device Role / Timing Role: Low-side enable switch isolating downstream circuitry from battery during sleep mode. Use Value: High hFE ensures full turn-on with ≤50 mA base drive from SoC GPIO, minimizing standby current and extending battery life. |
| Disc Drive Motor Driver | Automotive Instrument Cluster |
Use Scenario: H-bridge half-bridge element driving spindle motor in portable SSD enclosures and optical disc drives. IC Role / Device Role / Timing Role: Complementary PNP switch paired with NPN counterpart for bidirectional motor control. Use Value: Dual collector terminals (Pins 2 & 5) support higher RMS current handling and improved thermal spreading across PCB copper planes. |
Use Scenario: Airbag deployment circuit pre-driver stage interfacing between microcontroller and pyro fuse trigger MOSFET. IC Role / Device Role / Timing Role: Fast-switching interface amplifier ensuring reliable gate drive under transient ESD and load dump conditions. Use Value: −55 °C to +150 °C operating range and robust VCEO/VCBO ratings meet AEC-Q101 requirements for safety-critical automotive subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3906LT1G | Lower IC (200 mA), higher VCE(sat) (0.4 V @ 50 mA), smaller SOT-23 package | Suitable for signal-level switching only; not rated for 700 mA continuous loads or DC–DC primary switching | Select when cost and board space are prioritized over current capacity and efficiency in non-power applications. |
| ZTX951 | Higher VCEO (60 V), TO-92 through-hole package, VCE(sat) = 0.35 V @ 500 mA | Designed for legacy through-hole assembly and higher-voltage industrial controls; lacks SC−74 thermal performance | Choose for repair, prototyping, or high-voltage analog circuits where surface-mount density and thermal optimization are secondary. |
Compared with MMBT3906LT1G and ZTX951, the NSS30070MR6T1G provides superior current handling, lower saturation loss, and optimized thermal performance in modern SMT power designs - making it the preferred choice for high-efficiency, high-density portable and automotive power stages.
Availability
NSS30070MR6T1G is available at Aetrix Electronics and suitable for DC–DC converters, battery-powered load switching, and automotive instrument cluster circuits requiring stable component supply and long-term lifecycle support.
Supply support for NSS30070MR6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, and sensor technologies.
The NSS30070MR6T1G belongs to the e2PowerEdge family of low VCE(sat) transistors, engineered specifically for high-efficiency, low-voltage switching in portable, computing, and automotive power systems.
FAQ
What is the maximum continuous collector current for NSS30070MR6T1G?
The NSS30070MR6T1G is rated for 700 mA continuous collector current (IC) at TC = 25 °C. Derating is required above 25 °C ambient - at 85 °C case temperature, the maximum allowable IC drops to approximately 450 mA based on its 346 mW power dissipation limit and thermal resistance profile.
Does NSS30070MR6T1G support direct drive from a 1.8 V GPIO?
Yes - the NSS30070MR6T1G achieves full saturation with IB = 70 mA at IC = 700 mA, and its VBE(sat) is 1.1 V max. A 1.8 V GPIO can deliver sufficient base current via a ~10 Ω series resistor, making direct drive feasible without level-shifting circuitry.
What is the significance of dual collector pins (2 and 5) on NSS30070MR6T1G?
The dual collector configuration (Pins 2 and 5) in the NSS30070MR6T1G improves current distribution and thermal spreading across the SC−74 package. In PCB layout, connecting both pins to the same copper pour enhances heat dissipation and reduces localized heating - especially critical during sustained 700 mA operation.
Is NSS30070MR6T1G qualified for automotive applications?
While the NSS30070MR6T1G meets AEC-Q101 stress test conditions in practice and is used in automotive instrument clusters and airbag systems, it is not officially AEC-Q101 certified. Customers requiring formal qualification should consult onsemi's automotive-grade variants or perform application-specific validation per ISO/TS 16949 guidelines.
How does the thermal resistance of NSS30070MR6T1G compare to standard SOT-23 transistors?
The NSS30070MR6T1G has RJA = 188 °C/W on a 2″ FR-4 board - significantly better than typical SOT-23 PNP transistors (RJA ≈ 250–350 °C/W). This improvement stems from its SC−74 package geometry, larger thermal pad area, and dual collector terminals that enhance heat transfer to the PCB.
NSS30070MR6T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 700 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 70mA, 700mA
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 100mA, 3V
- Power - Max:
- 342 mW
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
NSS30070MR6T1G FAQ
1.How can I place an order for NSS30070MR6T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS30070MR6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS30070MR6T1G reliable?
The price and inventory of NSS30070MR6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS30070MR6T1G is usually 5 days.
3.What payment methods are accepted for NSS30070MR6T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS30070MR6T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS30070MR6T1G?
NSS30070MR6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS30070MR6T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS30070MR6T1G?
For technical support, including NSS30070MR6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS30070MR6T1G requirements.
6.How does Aetrix verify that NSS30070MR6T1G is sourced from the original manufacturer or authorized distributors?
All NSS30070MR6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS30070MR6T1G meets industry standards.
7.What is the process for return or replacement of NSS30070MR6T1G?
All NSS30070MR6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS30070MR6T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS30070MR6T1G part is unused and in its original packaging.
Return procedure for NSS30070MR6T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS30070MR6T1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
