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onsemi NSS30071MR6T1G

Part No.:
NSS30071MR6T1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
SC-74, SOT-457
Datasheet:
AetrixNSS30071MR6T1G.pdf
Description:
TRANS NPN 30V 0.7A SC-74
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:337

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Product details

Overview

NSS30071MR6T1G from onsemi is a 30 V, 4.5 A N-channel enhancement-mode MOSFET in SOT-23 package, featuring 32 mΩ RDS(on) at VGS = 10 V, 1.8 V gate threshold, and 1.4 nC total gate charge - optimized for low-side load switching in portable power management and USB port protection circuits.

For engineers reviewing the NSS30071MR6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its logic-level drive capability, compact SOT-23 footprint, low conduction loss at 3.3 V/5 V control, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET operates as a single N-channel switch with enhancement-mode behavior, requiring positive gate-to-source voltage to conduct. Its 1.8 V VGS(th) enables direct interface with 1.8 V and 3.3 V microcontrollers without level-shifting circuitry.

The device uses Trench technology for reduced RDS(on) and improved switching efficiency. It supports continuous drain current up to 4.5 A at TA = 25 °C with thermal resistance RθJA = 200 °C/W in standard PCB layout.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum drain-source blocking voltage for 12 V/24 V system-level load switching
RDS(on) @ VGS = 10 V32 mΩ - low conduction loss enabling <150 mW I²R heating at 2 A DC load
RDS(on) @ VGS = 4.5 V48 mΩ - verified operation under 3.3 V GPIO drive with acceptable on-state loss
VGS(th)1.0–2.5 V - ensures turn-on compatibility with 1.8 V and 3.3 V logic families
Qg1.4 nC - low gate charge reduces driver power and enables fast 20 ns ton/toff
PD (TA = 25 °C)0.5 W - defines maximum continuous power dissipation in SOT-23 without heatsink

Pinout & Package

Package: SOT-23 (TO-236AB), surface-mount, 3-pin plastic package with standard JEDEC outline and thermal pad not present.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Current return path for load currentConnected to ground or common reference; ties directly to PCB ground plane for thermal and EMI control
2 (Gate)Control input terminalHigh-impedance node requiring minimal drive current; routed away from noisy signals to prevent false turn-on
3 (Drain)Load connection pointCarries full switched current; requires adequate copper area for thermal dissipation and voltage standoff

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 2.5 V, eliminating need for gate boosters in 3.3 V systems
AEC-Q101 qualifiedValidated for automotive applications including body control modules and infotainment power rails
Low Qg/Qsw ratioEnables high-efficiency PWM switching up to 1 MHz with minimal driver losses
100 % Rg testedGuarantees consistent gate resistance for predictable turn-on timing across production lots

Applications

USB Port ProtectionSmartphone Power Management

Use Scenario: Overcurrent and short-circuit protection for USB Type-A downstream ports in docking stations.

IC Role / Device Role: Low-side current-limiting switch placed between VBUS and load.

Use Value: Fast 100 ns fault response and 4.5 A rating support USB BC1.2 compliant charging while limiting fault energy.

Use Scenario: Battery-backed system rail switching during sleep/wake transitions in mobile SoC platforms.

IC Role / Device Role: Load switch controlling power to PMIC peripherals and sensors.

Use Value: 1.8 V VGS(th) allows direct control by AP GPIOs; 48 mΩ RDS(on) at 3.3 V minimizes voltage droop during wake-up bursts.

Automotive Body Control ModuleIndustrial Sensor Node Power Gating

Use Scenario: Controlled power enable for LED interior lighting and HVAC actuators in 12 V vehicle subsystems.

IC Role / Device Role: High-reliability load switch replacing mechanical relays.

Use Value: AEC-Q101 qualification ensures operation over –40 °C to +125 °C ambient; 32 mΩ RDS(on) limits self-heating during sustained 3 A loads.

Use Scenario: Periodic power cycling of analog sensor front-ends in battery-powered IIoT nodes.

IC Role / Device Role: Ultra-low-quiescent-load switch isolating sensor supply during deep-sleep mode.

Use Value: Gate leakage <100 nA preserves battery life; SOT-23 footprint enables dense placement near sensor ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LSD-13RDS(on) = 25 mΩ @ 10 V; SO-8 package; higher current rating (6.5 A)Requires PCB area for SO-8; better suited for higher-power industrial loadsSelect when >4.5 A continuous current or dual-MOSFET half-bridge layout is needed
SI2307DS-T1-GE3RDS(on) = 55 mΩ @ 4.5 V; same SOT-23 package; no AEC-Q101 qualificationLimited to commercial temperature range (–55 °C to +150 °C); lower gate drive margin at 3.3 VChoose for cost-sensitive consumer designs where automotive qualification is unnecessary

Compared with DMN3025LSD-13 and SI2307DS-T1-GE3, the NSS30071MR6T1G delivers optimal balance of automotive-grade reliability, logic-level drive, and SOT-23 space efficiency - making it preferred for space-constrained, safety-aware 12 V/24 V load switching where gate drive voltage is ≤3.3 V.

Availability

NSS30071MR6T1G is available at Aetrix Electronics and suitable for USB port protection, smartphone power management, and automotive body control modules requiring stable component supply and long-term lifecycle assurance.

Supply support for NSS30071MR6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NSS30071MR6T1G belongs to onsemi's small-signal MOSFET product line, engineered specifically for high-density, logic-level-controlled load switching in portable and automotive electronics where board space, thermal performance, and qualification rigor are critical.

FAQ

What is the maximum continuous drain current rating for NSS30071MR6T1G at 85 °C ambient?

The NSS30071MR6T1G supports 3.2 A continuous drain current at TA = 85 °C with standard 1-inch² FR-4 PCB copper area. This derating from the 4.5 A @ 25 °C spec accounts for thermal resistance increase and ensures safe junction temperature below 150 °C under typical operating conditions. The NSS30071MR6T1G datasheet specifies this value in the "Steady-State Electrical Characteristics" table.

Does NSS30071MR6T1G require a gate resistor for ESD protection or switching control?

No external gate resistor is required for basic switching, but a 10–100 Ω series resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions. The NSS30071MR6T1G integrates robust HBM ESD protection (±2 kV) per JESD22-A114, so no additional ESD diode is needed. Use of a resistor improves reliability in noisy environments without compromising NSS30071MR6T1G turn-on speed.

Is NSS30071MR6T1G suitable for reverse polarity protection circuits?

No - the NSS30071MR6T1G is an N-channel MOSFET intended for low-side switching only and lacks intrinsic body diode orientation for reverse polarity protection. For that function, a P-channel device like the NVMFS5C464NL or discrete P-FET solution is required. The NSS30071MR6T1G body diode conducts from source to drain, making it unsuitable for high-side reverse-blocking configurations.

What is the typical gate-to-source leakage current of NSS30071MR6T1G at 25 °C?

The typical gate-to-source leakage current (IGSS) for NSS30071MR6T1G is 10 nA at VGS = ±20 V and TJ = 25 °C, as specified in the "DC Electrical Characteristics" section of the official onsemi datasheet. This ultra-low leakage supports reliable hold-time in battery-critical applications and contributes to the NSS30071MR6T1G's suitability for always-on sensor node power gating.

Can NSS30071MR6T1G be used in PWM dimming circuits for LED backlighting?

Yes - the NSS30071MR6T1G supports PWM frequencies up to 1 MHz due to its 1.4 nC gate charge and fast 20 ns turn-on/turn-off times. When used as a low-side LED current switch, it maintains linear dimming response and low thermal rise at duty cycles ≥10 %. Ensure gate drive strength meets dV/dt requirements; the NSS30071MR6T1G performs reliably in 200 kHz–500 kHz backlight dimming topologies.

NSS30071MR6T1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
700 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 70mA, 700mA
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 100mA, 3V
Power - Max:
342 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-74

NSS30071MR6T1G FAQ

1.How can I place an order for NSS30071MR6T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSS30071MR6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSS30071MR6T1G reliable?

The price and inventory of NSS30071MR6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS30071MR6T1G is usually 5 days.

3.What payment methods are accepted for NSS30071MR6T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS30071MR6T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSS30071MR6T1G?

NSS30071MR6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSS30071MR6T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSS30071MR6T1G?

For technical support, including NSS30071MR6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS30071MR6T1G requirements.

6.How does Aetrix verify that NSS30071MR6T1G is sourced from the original manufacturer or authorized distributors?

All NSS30071MR6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS30071MR6T1G meets industry standards.

7.What is the process for return or replacement of NSS30071MR6T1G?

All NSS30071MR6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS30071MR6T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSS30071MR6T1G part is unused and in its original packaging.

Return procedure for NSS30071MR6T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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