My Inquiry
My Account
onsemi NSS35200CF8T1G
- Part No.:
- NSS35200CF8T1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
NSS35200CF8T1G.pdf
- Description:
- TRANS PNP 35V 2A CHIPFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSS35200CF8T1G from onsemi is a PNP bipolar junction transistor optimized for low-voltage, high-speed switching with −35 V VCEO, −7.0 A peak collector current, and ultra-low −0.10 V typical VCE(sat) at −1.0 A/−0.01 A drive-enabling efficient power control in portable DC–DC converters and battery-powered motor drives.
For engineers reviewing the NSS35200CF8T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified −35 V breakdown rating, confirmed ChipFET 8-pin surface-mount package with collector-base-emitter terminal mapping, thermal resistance of 90 °C/W (on 500 mm² PCB), and documented hFE ≥ 100 at −2.0 A.
Technical Context
This device belongs to onsemi's e2PowerEdge family of low-saturation-voltage transistors, designed specifically for direct drive from PMU control outputs without external base resistors. Its linear gain (hFE) and tight VCE(sat) distribution support stable analog amplification and predictable digital switching across −55 °C to +150 °C.
The ChipFET package enables high-current handling in a miniature footprint, with six collector terminals (pins 1,2,3,6,7,8), single base (pin 4), and emitter (pin 5) configured for low-inductance, low-resistance power paths-critical for minimizing switching losses in high-frequency DC–DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −35 V - Maximum safe collector-emitter voltage before avalanche breakdown; defines usable input range in 24 V and 32 V systems. |
| IC (cont.) | −2.0 A - Continuous DC current capability; sets steady-state power stage sizing for load switches and motor drivers. |
| VCE(sat) (typ.) | −0.10 V @ −1.0 A/−0.01 A - Enables <100 mW conduction loss at 1 A, reducing thermal load in compact layouts. |
| hFE | 100–400 - High, linear current gain allows direct interface with low-drive GPIOs and PMU outputs without buffer stages. |
| fT | 100 MHz - Supports switching frequencies up to ~10–20 MHz in Class-E or resonant converters with minimal gain roll-off. |
| RJA | 90 °C/W - Achieved on 500 mm² copper; enables 1.35 W continuous dissipation at 25 °C ambient without forced cooling. |
| ESD Rating | HBM Class 3 (>8 kV), MM Class C - Robust enough for automated assembly and handheld-device integration without extra protection. |
Pinout & Package
Package: ChipFET (Case 1206A, Style 4), 8-pin surface-mount, Pb-free, with exposed thermal pad (pin 5 is emitter; pins 1,2,3,6,7,8 are internally connected collectors; pin 4 is base).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 6, 7, 8 | Collector | Parallel-connected high-current terminals reduce effective RCE and improve thermal spreading across PCB copper. |
| 4 | Base | Single low-impedance control node; accepts standard CMOS/TTL logic levels when driven with appropriate base resistor. |
| 5 | Emitter | Primary current return path and thermal anchor; soldered to large copper pour for optimal heat extraction. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCE(sat) | −0.10 V typical at −1.0 A enables >98% efficiency in 3.3 V–5 V load switches with <100 mW self-heating. |
| High hFE linearity | 100–400 over −0.1 A to −2.0 A supports accurate analog current sensing and stable biasing in amplifier configurations. |
| ChipFET thermal performance | 90 °C/W RJA on 500 mm² board allows 1.35 W continuous operation-doubling power density vs. SO-8 equivalents. |
| Pb-free & RoHS compliant | Meets J-STD-609 Category 1 moisture sensitivity; qualified for lead-free reflow per JEDEC J-STD-020. |
Applications
| Portable DC–DC Converters | Battery-Powered Motor Control |
|---|---|
Use Scenario: Step-down regulation in smartphones and digital cameras where space and thermal budget are constrained. IC Role / Device Role / Timing Role: Main switching transistor in synchronous buck converter output stage, operating at 1–3 MHz. Use Value: −0.10 V VCE(sat) cuts conduction loss by >40% vs. standard PNP transistors, extending battery runtime. | Use Scenario: Low-voltage bidirectional drive for spindle motors in portable HDDs and SSD actuator circuits. IC Role / Device Role / Timing Role: High-side PNP switch enabling rapid direction reversal with minimal shoot-through risk. Use Value: Six parallel collector pins reduce effective saturation resistance, supporting −7.0 A peak pulses without derating. |
| Automotive Instrument Clusters | PMU-Driven Load Switching |
Use Scenario: Power sequencing and backlight dimming in automotive LCD clusters requiring ASIL-B compatible discrete control. IC Role / Device Role / Timing Role: High-reliability load switch managing 12 V rail distribution to display modules and sensors. Use Value: −55 °C to +150 °C operating range and HBM Class 3 ESD ensure robustness against automotive thermal cycling and EMI. | Use Scenario: Direct switching of peripheral rails (e.g., USB, audio codec, sensor arrays) from PMU GPIO outputs in wearables. IC Role / Device Role / Timing Role: Discrete high-gain switch eliminating need for external driver ICs or level shifters. Use Value: hFE ≥ 100 at −2.0 A allows full turn-on with ≤10 mA base current-matching typical PMU output capability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN25050DFH | Higher VCEO (−50 V), lower IC (−1.5 A cont.), SOT-23 package with higher RJA (200 °C/W) | Better for 48 V systems but limited to <1 A continuous loads; unsuitable for high-current motor pulses | Select when voltage margin >15 V is required and thermal budget permits higher junction rise |
| MMDT3906-7-F | Lower IC (−200 mA), TO-236 package, VCE(sat) = −0.4 V @ −50 mA - 4× higher conduction loss | Only suitable for signal-level switching or low-power logic translation-not power switching | Choose only for sub-100 mA bias or level-shifting; not a functional replacement for NSS35200CF8T1G power roles |
Compared with ZXTN25050DFH and MMDT3906-7-F, the NSS35200CF8T1G delivers superior current handling (−7.0 A peak), lowest VCE(sat), and best thermal performance in its class-making it the preferred choice for compact, high-efficiency portable power stages where both current density and thermal management are critical.
Availability
NSS35200CF8T1G is available at Aetrix Electronics and suitable for portable DC–DC converters, battery-powered motor controls, and automotive instrument cluster power management requiring stable component supply and long-term lifecycle assurance.
Supply support for NSS35200CF8T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NSS35200CF8T1G belongs to the e2PowerEdge family-designed specifically for high-efficiency, low-voltage switching in space-constrained portable electronics and battery-powered systems.
FAQ
What is the maximum continuous collector current rating for the NSS35200CF8T1G?
The NSS35200CF8T1G has a maximum continuous collector current (IC) rating of −2.0 A at TA = 25 °C with 500 mm² copper PCB area. Derating applies above 25 °C at 11 mW/°C. This rating reflects real-world thermal limits-not just silicon capability-and ensures reliable operation in compact, unventilated enclosures when properly mounted.
Does the NSS35200CF8T1G support direct drive from a microcontroller GPIO?
Yes-the NSS35200CF8T1G's high hFE (≥100 at −2.0 A) and low VBE(sat) (−0.68 V typical) allow direct drive from most 3.3 V or 5 V microcontroller GPIOs when paired with a series base resistor (e.g., 10 kΩ for ~0.3 mA base current). The NSS35200CF8T1G avoids the need for additional driver stages in low-to-moderate current switching applications.
What is the thermal resistance junction-to-ambient (RJA) for the NSS35200CF8T1G under standard PCB conditions?
The NSS35200CF8T1G achieves RJA = 90 °C/W when mounted on FR-4 PCB with 500 mm² of 1 oz copper (per note 2 in datasheet). This value is measured under standardized thermal test conditions and directly determines allowable power dissipation: at 25 °C ambient, the NSS35200CF8T1G supports 1.35 W continuous dissipation before reaching its 150 °C max junction temperature.
Is the NSS35200CF8T1G pin-compatible with other ChipFET PNP transistors?
No-pin compatibility cannot be assumed across ChipFET PNP devices. The NSS35200CF8T1G uses Style 4 pinout (6-collector, 1-base, 1-emitter), but other ChipFET PNPs like NSS20201CF8T1G use different internal mappings. Always verify pin function per datasheet; the NSS35200CF8T1G's specific pinout must be used to avoid misconnection and device failure.
What does the "CF8" in NSS35200CF8T1G indicate?
The "CF8" in NSS35200CF8T1G denotes the ChipFET 8-pin package (Case 1206A, Style 4) with Pb-free finish. It distinguishes this variant from smaller-footprint versions (e.g., CF6) and confirms the 8-terminal configuration with six paralleled collectors-critical for achieving its rated −7.0 A peak current and low thermal resistance. The NSS35200CF8T1G's marking and mechanical outline are fully defined in onsemi's CASE1206A−03 specification.
NSS35200CF8T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 35 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 20mA, 2A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1.5A, 2V
- Power - Max:
- 635 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ChipFET™
NSS35200CF8T1G FAQ
1.How can I place an order for NSS35200CF8T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSS35200CF8T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSS35200CF8T1G reliable?
The price and inventory of NSS35200CF8T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSS35200CF8T1G is usually 5 days.
3.What payment methods are accepted for NSS35200CF8T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSS35200CF8T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSS35200CF8T1G?
NSS35200CF8T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSS35200CF8T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSS35200CF8T1G?
For technical support, including NSS35200CF8T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSS35200CF8T1G requirements.
6.How does Aetrix verify that NSS35200CF8T1G is sourced from the original manufacturer or authorized distributors?
All NSS35200CF8T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSS35200CF8T1G meets industry standards.
7.What is the process for return or replacement of NSS35200CF8T1G?
All NSS35200CF8T1G units undergo pre-shipment inspection (PSI). If there is an issue with NSS35200CF8T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSS35200CF8T1G part is unused and in its original packaging.
Return procedure for NSS35200CF8T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSS35200CF8T1G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
